Abstract: A semiconductor package with improved height uniformity of solder cap bumps therein is disclosed. In one embodiment, the semiconductor package includes a semiconductor substrate comprising a plurality of pads spacedly disposed on a top surface of the substrate, and a passivation layer formed on top of the pads, wherein a plurality of pad openings are created to expose at least a portion of the pads; a plurality of solder cap bumps formed at the pad openings of the passivation layer; and a carrier substrate having a plurality of bond pads electrically connected to the solder caps of the solder cap bumps on the semiconductor substrate. The solder cap bump includes a solder cap on top of a conductive pillar, and a patternable layer can be coated and patterned on a top surface of the conductive pillar to define an area for the solder ball to be deposited. The deposited solder ball can be reflowed to form the solder cap.

Abstract: A manufacturing method of a non-leaded package structure is provided. An upper surface and a lower surface of a metal base plate are patterned so as to form a plurality of first protruding parts and at least a second protruding part on the upper surface and to form a plurality of first recess patterns on the lower surface corresponding to the first protruding parts. A first solder layer is formed in each of the first recess patterns respectively. A chip is mounted on the second protruding part and electrically connected to the first protruding parts with a plurality of bonding wires. An encapsulant is formed on the upper surface. A back etching process is performed on the lower surface to partially remove the metal base plate until the encapsulant is exposed and a lead group including at least a die pad and a plurality of leads is defined.

Abstract: A manufacturing method of a bump structure with an annular support includes the following steps. A substrate including pads and a passivation layer is provided. The passivation has first openings exposing a portion of the pads. An UBM material layer is formed to cover the passivation layer and the pads. A patterned photoresist layer, having second openings respectively exposing the UBM material layer over the pads, is formed on the UBM material layer. A diameter of each second opening located on a lower surface of the patterned photoresist layer is less than that located on an upper surface of the patterned photoresist layer. Bumps are formed in the second openings. A portion of the patterned photoresist layer is removed to form an annular support at a periphery of each bump. The UBM material layer is patterned using the annular supports and the bumps as masks to form UBM layers.

Abstract: A manufacturing method of a bump structure having a reinforcement member is disclosed. First, a substrate including pads and a passivation layer is provided. The passivation layer has first openings, and each first opening exposes a portion of the corresponding pad respectively. Next, an under ball metal (UBM) material layer is formed on the substrate to cover the passivation layer and the pads exposed by the passivation layer. Bumps are formed on the UBM material layer and the lower surface of each bump is smaller than that of the opening. Each reinforcement member formed on the UBM material layer around each bump contacts with each bump, and the material of the reinforcement member is a polymer. The UBM material layer is patterned to form UBM layers and the lower surface of each UBM layer is larger than that of each corresponding opening. Hence, the bump has a planar upper surface.

Abstract: The present invention provides a chip-stacked package structure with leadframe having bus bar, comprising: a leadframe composed of a plurality of inner leads arranged in rows facing each other, a plurality of outer leads, and a die pad, wherein the die pad is provided between the plurality of inner leads and is vertically distant from the plurality of inner leads; a chip-stacked structure formed with a plurality of chips that stacked together and set on the die pad, the plurality of chips and the plurality of inner leads being electrically connected with each other; and an encapsulant covering over the chip-stacked package structure and the leadframe, in which the leadframe comprises at least a bus bar, which is provided between the plurality of inner leads arranged in rows facing each other and the die pad.

Abstract: A method of fabricating a chip package structure includes the steps of providing a lead frame having a die pad, plural leads and at least one structure enhancement element. A chip is then disposed on the die pad and plural bonding wires are formed to electrically connect the chip to the leads. Then, an upper encapsulant and a first lower encapsulant are formed on an upper surface and a lower surface of the lead frame, respectively. The first lower encapsulant has plural concaves to expose the structure enhancement element. Finally, the structure enhancement element is etched with use of the first lower encapsulant as an etching mask until the die pad and one of the leads connected by the structure enhancement element, or two of the adjacent leads connected thereby are electrically insulated.

Abstract: A method of fabricating a chip package is provided. A thin metal plate having a first protrusion part, a second protrusion part and a plurality of third protrusion parts are provided. A chip is disposed on the thin metal plate, and a plurality of bonding wires for electrically connecting the chip to the second protrusion part and the second protrusion part to the third protrusion parts is formed. An upper encapsulant and a lower encapsulant are formed on the upper surface and the lower surface of the thin metal plate respectively. The lower encapsulant has a plurality of recesses for exposing a portion of the thin metal plate at locations where the first protrusion part, the second protrusion part and the third protrusion parts are connected to one another. Finally, the thin metal plate is etched by using the lower encapsulant as an etching mask.

Abstract: A chip package structure including a chip, a lead frame, first bonding wires and second bonding wires is provided. The chip has an active surface and chip bonding pads disposed thereon. The lead frame is fixed on the chip and the lead frame includes inner leads, at least one bus bar, an insulating layer and transfer bonding pads. The bus bar is located between the chip bonding pads and the inner leads. The insulating layer is disposed on the bus bar and the transfer bonding pads are disposed thereon. The inner leads and the bus bar are located above the active surface. The chip and the insulating layer are located respectively on two opposite surfaces of the bus bar. The first bonding wires respectively connect the chip bonding pads and the transfer bonding pads. The second bonding wires respectively connect the transfer bonding pads and the inner leads.

Abstract: A bump structure with an annular support suitable for being disposed on a substrate is provided. The substrate has at least one pad and a passivation layer that has at least one opening exposing a portion of the pad. The bump structure with the annular support includes an under ball metal (UBM) layer, a bump, and an annular support. The UBM layer is disposed on the passivation layer and covers the pad exposed by the passivation layer. The bump is disposed on the UBM layer over the pad, and a diameter of a lower surface of the bump is less than the diameter of an upper surface thereof. The annular support surrounds and contacts the bump, and a material of the annular support is photoresist. An under cut effect is not apt to happen on the bump structure.

Abstract: A fabricating process of a chip package structure is provided. First, a first substrate having a plurality of first bonding pads and a second substrate having a plurality of second bonding pads are provided, wherein bumps are formed on the first bonding pads of the first substrate. A first two-stage adhesive layer is formed on the first substrate and is B-stagized to form a first B-staged adhesive layer. A second two-stage adhesive layer is formed on the second substrate and is B-stagized to form a second B-staged adhesive layer. Then, the first substrate and the second substrate are bonded via the first and second B-staged adhesive layer such that the bumps pierce through the second B-staged adhesive layer and are electrically connected to the second bonding pads, wherein each of the first bonding pads is respectively electrically connected to one of the second bonding pads via one of the bumps.

Abstract: A manufacturing method of a bump structure having a reinforcement member is disclosed. First, a substrate including pads and a passivation layer is provided. The passivation layer has first openings, and each first opening exposes a portion of the corresponding pad respectively. Next, an under ball metal (UBM) material layer is formed on the substrate to cover the passivation layer and the pads exposed by the passivation layer. Bumps are formed on the UBM material layer and the lower surface of each bump is smaller than that of the opening. Each reinforcement member formed on the UBM material layer around each bump contacts with each bump, and the material of the reinforcement member is a polymer. The UBM material layer is patterned to form UBM layers and the lower surface of each UBM layer is larger than that of each corresponding opening. Hence, the bump has a planar upper surface.

Abstract: A chip package with asymmetric molding including a lead frame, a chip, an adhesive layer, bonding wires and an encapsulant, is provided. The lead frame includes a frame body and at least a turbulent plate. The frame body has inner lead portions and outer lead portions. The turbulent plate is bended upwards to form a bulge portion and the first end of the turbulent plate is connected to the frame body. The chip is fixed under the inner lead portions and the turbulent plate is located at one side of the chip. The adhesive layer is disposed between the chip and the inner lead portions, and the bonding wires are electrically connected between the chip and the corresponding inner lead portions, respectively. The encapsulant encapsulates at least the chip, the bonding wires, the inner lead portions, the adhesive layer and the turbulent plate.

Abstract: A fabricating process of chip package structure is provided. First, a first substrate having a plurality of first bonding pads and a second substrate having a plurality of second bonding pads are provide, wherein a plurality of bumps are formed on the first bonding pads of the first substrate. A first two-stage adhesive layer is formed on the first substrate or on the second substrate and is B-stagized to form a first B-staged adhesive layer. A second two-stage adhesive layer is formed on the first B-staged adhesive layer and is B-stagized to form a second B-staged adhesive layer. Then, the first substrate and the second substrate are bonded via the first B-staged adhesive layer and the second B-staged adhesive layer such that each of the first bonding pads is respectively electrically connected to one of the second bonding pads via one of the bumps.

Abstract: A thin-film fingerprint sensor package primarily comprises a fingerprint sensor chip, a plurality of bumps, a wiring film with a plurality of leads and at least an encapsulant to encapsulate the bumps. A sensing area is formed on an active surface of the fingerprint sensor chip. The bumps are disposed on the active surface and located at two opposing sides of the sensing area. The wiring film has an opening to expose the sensing area. Each lead has an inner end and an outer end. The inner ends are located at two opposing sides of the opening and are bonded to the bumps. Preferably, the wiring film has a flexible extension and the outer ends of the leads are rerouted to the extension for external electrical connections.

Abstract: A chip package includes a thermal enhanced plate, contacts around the thermal enhanced plate and electrically insulated from the thermal enhanced plate, a film-like circuit layer disposed on the contacts and the thermal enhanced plate, a conductive adhesive layer, a first molding, and at least one chip disposed on the film-like circuit layer. The conductive adhesive layer is disposed between the contacts and the film-like circuit layer electrically connected to the contacts through the conductive adhesive layer. The chip has a back surface, an active surface and many bumps disposed thereon, and the chip is electrically connected to the film-like circuit layer via the bumps. The first molding at least encapsulates a portion of the thermal enhanced plate, the conductive adhesive layer, parts of the contacts and at least a portion of the film-like circuit layer. Therefore, heat dissipation efficiency of the light emitting chip package is improved.

Abstract: A chip package including a base, a chip, a molding compound and a plurality of outer terminals is provided. The base is essentially consisted of a patterned circuit layer having a first surface and a second surface opposite to each other and a solder mask disposed on the second surface, wherein the solder mask has a plurality of first openings by which part of the patterned circuit layer is exposed. The chip is disposed on the first surface and is electrically connected to the patterned circuit layer. The molding compound covers the pattern circuit layer and fixes the chip onto the patterned circuit layer. The outer terminals are disposed in the first openings and electrically connected to the patterned circuit layer.

Abstract: A manufacturing process for a chip package structure is provided. First, a patterned conductive layer and a patterned solder resist layer on the patterned conductive layer are provided. A plurality of chips are bonded onto the patterned conductive layer such that the chips and the patterned solder resist layer are disposed at two opposite surfaces of the patterned conductive layer. The chips are electrically connected to the patterned conductive layer by a plurality of bonding wires, wherein the chips and the bonding wires are at the same side of the patterned conductive layer. A molding compound is formed to encapsulate the patterned conductive layer, the chips and the bonding wires. Then, the molding compound, the patterned conductive layer and the patterned solder resist layer are separated.

Abstract: A manufacturing process for a chip package structure is provided. First, a patterned conductive layer having a plurality of first openings and a patterned solder resist layer on the patterned conductive layer are provided. A plurality of chips are bonded onto the patterned conductive layer such that the chips and the patterned solder resist layer are disposed at two opposite surfaces of the patterned conductive layer. The chips are electrically connected to the patterned conductive layer by a plurality of bonding wires passing through the first openings of the patterned conductive layer. At least one molding compound is formed to encapsulate the patterned conductive layer, the patterned solder resist layer, the chips and the bonding wires. Then, the molding compound, the patterned conductive layer and the patterned solder resist layer are separated.

Abstract: A Quad Flat Non-leaded (QFN) chip package including a patterned conductive layer, a first solder resist layer, a chip, a plurality of bonding wires and a molding compound is provided. The patterned conductive layer has a first surface and a second surface opposite to each other. The first solder resist layer is disposed on the first surface, wherein a part of the first surface is exposed by the first solder resist layer. The chip is disposed on the first solder resist layer, wherein the first solder resist layer is between the patterned conductive layer and the chip. The bonding wires are electrically connected to the chip and the patterned conductive layer exposed by the first solder resist layer. The molding compound encapsulates the pattern conductive layer, the first solder resist layer, the chip and the bonding wires.

Abstract: A wafer treating method for making adhesive dies is provided. A liquid adhesive with two-stage property is coated on a surface of a wafer. Then, the wafer is pre-cured to make the liquid adhesive transform a thermo-bonding adhesive film having B-stage property which has a glass transition temperature not less than 40° C. for handling without adhesive under room temperature. After positioning the wafer, the wafer is singulated to form a plurality of dies with adhesive for die-to-die stacking, die-to-substrate or die-to-leadframe attaching.