Abstract: Provided are a display apparatus and an electrically controlled light valve including a first substrate, a second substrate disposed opposite to the first substrate, a first transparent conductive layer disposed on the first substrate, a second transparent conductive layer disposed on the second substrate, a first liquid layer disposed between the first and the second transparent conductive layers, a second liquid layer disposed between the first and the second transparent conductive layers and reflective particles. The first and the second liquid layers are respectively adjacent to the first and the second transparent conductive layers. The first liquid layer includes a polar liquid. The second liquid layer includes a non-polar liquid. Each reflective particle has a conductive body and a surface modification layer covering the conductive body. When the electrically controlled light valve is switched to a light-transmission mode, the reflective particles are evenly dispersed in the first liquid layer.

Abstract: A reflection film including a reflection film substrate and a wavelength conversion layer is provided. The wavelength conversion layer is disposed on the reflection film substrate. The wavelength conversion layer includes a wavelength conversion material, a plurality of nanoparticles and a base material. Since the reflection film of the invention includes the wavelength conversion material and the plurality of nanoparticles, the backlight brightness and the color saturation of the display using the reflection film of the invention are improved.

Abstract: A flexible liquid crystal display (LCD) is provided. The flexible LCD includes a first substrate, a second substrate, and a liquid crystal layer. The first substrate includes a first flexible substrate, a second flexible substrate, a reflective layer, and an active component layer. The second flexible substrate is disposed on the first flexible substrate. The reflective layer is disposed between the first flexible substrate and the second flexible substrate. The active component layer is disposed on the second flexible substrate. The second substrate is disposed on the first substrate. The liquid crystal layer is disposed between the first substrate and the second substrate. The substrate of the flexible LCD above has good strength and can block the laser from irradiating to the active component layer to prevent the damage of the active components of the active component layer.

Abstract: A thin film transistor and a method of fabricating the same are provided. The thin film transistor includes a channel layer, a source, a drain, an insulating layer and a gate. The channel layer is disposed on a substrate. The source and the drain are disposed separately on the channel layer. The insulating layer covers the source, the drain and the channel layer. The gate is disposed on the insulating layer, wherein two opposite sidewalls of the channel layer are respectively aligned to a sidewall of the source distant to the drain and a sidewall of the drain distant to the source. The thin film transistor of the invention improves the precision of alignment in the fabricating process, such that the film transistor has an excellent quality.

Abstract: A gate driver circuit is provided. The gate driver circuit includes a plurality of gate driver units. The gate driver units are coupled to each other in sequence, and each of the gate driver units includes a shift register and a de-multiplexer. The shift register receives one of a plurality of operation clock signals and a startup signal and generates a first control signal and a second control signal according to the startup signal and the received operation clock signal. The de-multiplexer is coupled to the shift register and receives a portion of a plurality of gate clock signals to output the received portion of the gate clock signals according to the first control signal to generate a plurality of gate signals in sequence. The gate clock signals are enabled in sequence, and enabling durations of two consecutive clock signals in the gate clock signals are partially overlapped.

Abstract: A method of manufacturing a pixel structure of a liquid crystal display panel includes providing a substrate, forming a pixel electrode and a switch device that is electrically connected to the pixel electrode on the substrate, forming an insulating layer that covers the switch device and the pixel electrode on the substrate, forming a common electrode layer on the insulating layer, forming a patterned photoresist layer that includes a plurality of discontinuous patterns on the common electrode layer, performing a first etching process to remove a portion of the common electrode layer so as to forma patterned common electrode, performing a second etching process to remove part of a surface of the insulating layer so as to form a plurality of trenches, wherein the patterned common electrode does not cover the plurality of trenches, and removing the patterned photoresist layer.

Abstract: A processing method of a substrate is provided. The substrate is processed by a substrate processing apparatus. The substrate processing apparatus includes a reaction chamber and a secondary chamber surrounding the reaction chamber. The processing method includes: placing the substrate in the reaction chamber; performing a process to increase a pressure in the reaction chamber and a pressure in the secondary chamber, such that the pressure in the secondary chamber is between an atmospheric pressure and the pressure in the reaction chamber; increasing a temperature in the reaction chamber; and processing the substrate by a supercritical fluid in the reaction chamber.

Abstract: An in-cell touch-sensitive liquid crystal display device includes: a plurality of gate lines located on a first substrate; a plurality of data lines located on the first substrate and intersecting with the gate lines; a plurality of touch-sensitive signal lines located on the first substrate, wherein each of the touch-sensitive signal lines is located between two adjacent data lines; a plurality of thin-film transistors located on the first substrate and electrically connected to the gate lines and the data lines; a plurality of pixel electrodes electrically connected to the thin-film transistors; a plurality of common electrodes overlapping with the pixel electrodes, wherein the common electrodes are electrically connected to the touch-sensitive signal lines; a first insulating layer located between the common electrodes and the pixel electrodes; a second substrate disposed opposite to the first substrate; and a display medium located between the first substrate and the second substrate.

Abstract: A pixel structure including a thin-film transistor, a pixel electrode electrically connected to the thin-film transistor, a common electrode and an insulation layer located between the common electrode and the pixel electrode is provided. The pixel electrode has a plurality of first pixel branches. The common electrode has a plurality of first common branches. The first pixel branches and the first common branches are arranged alternately. An extending direction of the first pixel branches and an extending direction of the first common branches include a first acute angle.

Abstract: A touch device and a touch signal processing method thereof are provided. A type of a touch tool is determined according to a ratio between an average of signal intensities of sub touch signals of touch units in a target region and a signal intensity of a sub touch signal of a touch unit having the maximum signal intensity, and the touch signal is sharpened according to the type of the touch tool, so as to avoid interruption of the touch signal and misjudgment of a touch position due to inadequate intensity of sensing signals of the touch tool.

Abstract: The disclosure provides a pixel circuit for driving a light emitting diode. A second terminal of a driving transistor is coupled to a first terminal of the light emitting diode, and a control terminal of the driving transistor receives a bias voltage. A coupling switch is coupled between a first terminal and the control terminal of the driving transistor and controlled by a first selection signal to be turned on or off. A first terminal of a first switch receives a display data voltage or a reference voltage, and the first switch is controlled by a second selection signal to be turned on or off. A first terminal of a second switch is coupled to a second terminal of the first switch. A second terminal of the second switch is coupled between the second terminal of the driving transistor and the light emitting diode, and the second switch is controlled by the first selection signal to be turned on or off.

Abstract: An active device array substrate includes a substrate, first and second active devices, a gate insulation layer and an insulation barrier layer. The first and second active devices respectively includes first and second gate electrodes, first and second semiconductor blocks, first and second source electrodes, and first and second drain electrodes. A film layer of the second source electrode and the second drain electrode is the same with that of the first source electrode or the first drain electrode. The gate insulation layer is located between the first gate electrode and the first semiconductor block and between the second gate electrode and the second semiconductor block. The insulation barrier layer is disposed on the gate insulation layer, and covers the first semiconductor block. The insulation barrier layer has a first through hole for one of the first source electrode and the first drain electrode contacting the first semiconductor block.

Abstract: A method for fabricating a planarization layer includes: forming an active device on a substrate; covering the active device with a passivation layer; forming a pad layer on the passivation layer; forming an overcoating layer covering the passivation layer and the pad layer on the substrate; and removing a portion of the overcoating layer and the pad layer by an exposure and development process to form a patterned overcoating layer, wherein the patterned overcoating layer has an opening exposing the passivation layer on a position relative to the active device. The method for fabricating the planarization layer of the disclosure may save exposure to enhance productivity.

Abstract: The invention provides an in cell touch display device and a common voltage generating method thereof. The in cell touch display device includes a timing controller and a common voltage generator. The timing controller generates a control signal, divides a time section into a display scanning time section and a touch scanning time section according to the control signal, and divides the touch scanning time section into a touch start time section, a touch execution time section, and a touch end time section sequentially. The common voltage generator raises a common voltage to a first voltage in the touch start time section, provides a periodical pulse signal in the touch execution time section to generate the common voltage, and lowers the common voltage to a second voltage in the touch end time section, so as to improve the efficiency of touch scanning without affecting the efficiency of display scanning.

Abstract: A display panel and a pixel circuit thereof are provided. The pixel circuit includes a first transistor, a second transistor, a capacitor, a storage capacitor and a pixel capacitor. A first terminal of the first transistor is coupled to a source line, and a control terminal thereof is coupled to a gate line. A first terminal of the second transistor is coupled to a second terminal of the first transistor, and a control terminal of the second transistor is coupled to the gate line. A first terminal of the capacitor is coupled to the second terminal of the first transistor, and a second terminal of the capacitor receives a common voltage. The storage capacitor is coupled in series between a second terminal of the second transistor and the common voltage. The pixel capacitor is coupled in series between the second terminal of the second transistor and the common voltage.

Abstract: A display mother panel including a first motherboard, a second motherboard, a plurality of sealant structures and a plurality of spacers is provided. The second motherboard is stacked over the first motherboard. The sealant structures are disposed between the first motherboard and the second motherboard. An area surrounded by each of the sealant structures includes a display region and a non-display region surrounding the display region, and a peripheral region is between two adjacent sealant structures. The spacers are disposed on a lower surface of the second motherboard which is relatively close to the first motherboard and at least located in the non-display region and the peripheral region. The display mother panel can provide preferable structure reliability and display quality. Moreover, each display panel made from the display mother panel is also provided.

Abstract: An inflatable planting device including a storage tank, a cultivation tank, a field planting tray and a plurality of planting frames is provided. The storage tank has a first air bag. The cultivation tank has a second air bag, and is located on the storage tank. The field planting tray has a mesh air bag defining a plurality of plant holes, and the field planting tray is located on the cultivation tank. The planting frames have a third air bag, and are connected to a periphery of the storage tank, the cultivation tank and the field planting tray through a plurality of connecting holes, where the connecting holes connect the first air bag, the second air bag, the mesh air bag and the third air bag to make the storage tank, the cultivation tank, the field planting tray and the planting frames to form an integrated connection.

Abstract: A display device including a display module and a cover plate is provided. The cover plate is disposed on the display module, the cover plate has a central region and a peripheral region, and the peripheral region is located at one or more side of the central region. The cover plate also has a main body and a protrusion. The main body continuously extends from the central region to the peripheral region. The protrusion is located in the central region and between the main body and the display module, and a bottom surface of the cover plate at the central region is located closer to a top surface of the display module in a height direction than a bottom surface of the cover plate at the peripheral region because of the protrusion.

Abstract: The invention relates to a thin-film transistor and a manufacturing method thereof. The manufacturing method of the thin-film transistor includes the following steps: an insulating layer is formed to cover a gate on a substrate; a semiconductor pattern having a first region and a second region is formed on the insulating layer; a plurality of island patterns is formed, wherein at least a portion of the plurality of island patterns is disposed on the semiconductor pattern, and the plurality of island patterns is separated from one another by a gap; and a source and a drain are formed to cover a portion of the plurality of island patterns and fill the gaps to respectively be electrically connected to the first region and the second region of the semiconductor pattern.

Abstract: The invention provides a forming method of a via hole, including: sequentially stacking a patterned first conductive layer, a first insulating layer, a patterned second conductive layer, and a second insulating layer on a substrate. The second conductive layer and the first conductive layer overlap in a normal direction of the substrate, such that the second insulating layer has a protrusion portion protruding away from the substrate. A photosensitive material layer covers the second insulating layer. The photosensitive material layer is exposed, wherein a depth of exposure is equal to a vertical distance from a top surface of the protrusion portion to a surface of the photosensitive material layer. The exposed photosensitive material layer is removed by development to form a first via hole exposing the second insulating layer. The exposed second insulating layer is etched to form a second via hole to expose the second conductive layer, and then the photosensitive material layer is removed.