Abstract: A cable-type welding wire provided in the present application, includes a central welding wire and n peripheral welding wires arranged so as to be spirally wound on the central welding wire, with each of the peripheral welding wires having a diameter of dperipheral, and adjacent peripheral welding wires being arranged to be tangential to each other, wherein, the peripheral welding wires have a lay length of T, which satisfies the equation of T=m×(dperipheral+dcentral)/2, where m is a multiple of the lay length, dperipheral is a diameter of the peripheral welding wire, dcentral is a diameter of the central welding wire, and 3.2?m<20. This application can obtain a smaller penetration depth when the welding parameters remain constant due to a small multiple of the lay length of the cable-type welding wire, and can further reduce welding arcing current.

Abstract: A display substrate and manufacturing method thereof, and a display device are provided. The display substrate includes a base substrate, and a shift register unit and a first clock signal line that are on the base substrate, the first clock signal line extends along a first direction on the base substrate and is configured to provide a first clock signal to the shift register unit, the shift register unit includes an input circuit, an output circuit, a first control circuit and an output control circuit, and the first control circuit includes a first control switch and a second control switch, an active layer of the first control switch and an active layer of the second control switch are a continuous control semiconductor layer, the control semiconductor layer extends along the first direction.

Abstract: An antenna device according to an embodiment of the present invention includes a dielectric layer, a first antenna unit having a bent structure and extending along an upper surface, a lateral surface and a lower surface of the dielectric layer, and a second electrode pattern having a bent structure and extending along the lateral surface and the lower surface of the dielectric layer.

Abstract: A semiconductor device includes a peripheral circuit structure including a lower substrate, a plurality of circuits formed on the lower substrate, and a plurality of wiring layers connected to the plurality of circuits, an upper substrate covering the peripheral circuit structure and including a through opening, a memory stack structure including a plurality of gate lines, a memory cell contact passing through at least one of the plurality of gate lines to contact one gate line from among the plurality of gate lines, the memory cell contact extending to the peripheral circuit structure through the through opening and being configured to be electrically connected to a first wiring layer from among the plurality of wiring layers, and a plurality of dummy channel structures passing through at least one of the plurality of gate lines to extend to the peripheral circuit structure through the through opening.

Abstract: Methods and apparatuses for beam indication channel in a multi-beam system. A method of operating a user equipment includes receiving configuration information for one or more transmission configuration indication (TCI) states, associated TCI state identifiers (IDs), and a channel conveying one or more TCI state IDs and receiving the channel conveying the one or more TCI state IDs. The method also includes determining, based on the one or more TCI state IDs, one or more spatial domain filters for at least one of reception of downlink channels and transmission of uplink channels and determining a time for applying the one or more spatial domain filters. Additionally, the method includes at least one of: receiving, starting at the determined time, the downlink channels using the one or more spatial domain filters; and transmitting, starting at the determined time, the uplink channels using the one or more spatial domain filters.

Abstract: Disclosed is an extended high-performance server integrated management system based on remote server management standard to efficiently manage existing high-performance servers and ultra-high-performance servers capable of supporting extended BMC functions. This system includes multiple modules responsible for each major function, considering a possibility of large-scale expansion, and each module can be run on an independent server depending on the size of the management system. In addition, this system utilizes the Intelligent Platform Management Interface (IPMI) standard, which is widely used for efficient remote hardware management of ultra-high-performance servers, and supports function for collecting hardware monitoring information linked to BMC for various functions such as temperature, power, and fan speed and collectively controlling the hardware on the basis of the collected data. In this case, an out-of-band based agent communication method was used to extend the BMC functionality.

Abstract: A 3D printing device and method for integrated manufacturing of functionally gradient materials and three-dimensional structures. The device includes an active and passive mixing and printing module and a constraining and sacrificial layer printing module. An input end of the active mixing module connects to multiple anti-settling feeding modules, and an output end of the active mixing module connects to the passive mixing and printing module. The passive mixing and printing module and the constraining and sacrificial layer printing module are mounted on one side of an XYZ three-axis module. The constraining and sacrificial layer printing module connects to a constraining and sacrificial layer feeding module and prints and forms a functionally gradient three-dimensional structure.

Abstract: The present disclosure provides a method and apparatus for information display, and a non-volatile computer storage medium. The method includes: displaying search prompt information in response to a trigger operation for review content corresponding to a video; and displaying a search result page in response to a selection operation for the search prompt information.

Abstract: Disclosed are a barrel cover with an encoder, a garbage bin, a barrel cover control method, a motor driver, and a non-transitory computer-readable storage medium. The barrel cover with the encoder includes a housing, a motor, a buffer, a driving shaft, a cover plate, and a drive circuit; the housing is provided with a cover opening, a first connecting base, and a second connecting base; the motor is connected to the housing and provided with an encoder; a first end of the buffer is rotatably connected to the first connecting base, and a rotary shaft of the motor is connected to the first end of the buffer; an end of the driving shaft is rotatably connected to the second connecting base, and the other end of the driving shaft is connected to a second end of the buffer.

Abstract: A method for determining an index-of-refraction profile of an optical object, which has a cylindrical surface and a cylinder longitudinal axis, said method comprising the following method steps: (a) scanning the cylindrical surface of the object at a plurality of scanning locations by means of optical beams; (b) capturing, by means of an optical detector, a location-dependent intensity distribution of the optical beams deflected in the optical object; (c) determining the angles of deflection of the zero-order beams for each scanning location from the captured intensity distribution, comprising eliminating beam intensities, and (d) calculating the index-of-refraction profile of the object on the basis of the angle-of-deflection distribution, wherein method steps (a) and (b) are carried out with light beams having at least two different wavelengths.

Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: A system and methods of manufacturing semiconductor devices is described herein. The method includes forming a recess between fins in a substrate and forming a dielectric layer over the fins and in the recess. Once the dielectric layer has been formed, a bottom seed structure is formed over the dielectric layer within the recess and the dielectric layer is exposed along sidewalls of the recess. A dummy gate material is grown from the bottom seed structure in a bottom-up deposition process without growing the dummy gate material from the dielectric layer exposed along sidewalls of the recess.

Abstract: A semiconductor package includes a package substrate, a semiconductor chip on the package substrate, a heat dissipation structure on the package substrate, the heat dissipation structure including a center portion and an edge portion, a dam structure on a bottom surface of the center portion of the heat dissipation structure, the dam structure on a top surface of the semiconductor chip, and a heat conductive layer between the center portion of the heat dissipation structure and the semiconductor chip. A top surface of the dam structure is located at a same distance from a top surface of the package substrate in a vertical direction as a top surface of the heat conductive layer, wherein the vertical direction is perpendicular to the top surface of the package substrate.

Abstract: A semiconductor device includes a first passivation layer over a circuit and. conductive pad over the first passivation layer, wherein the conductive pad is electrically connected to the circuit. A second passivation layer is disposed over the conductive pad and the first passivation layer, and has a first opening and a second opening. The first opening exposes an upper surface of a layer that extends underneath the conductive pad, and the second opening exposes the conductive pad. A first insulating layer is disposed over the second passivation layer and filling the first and second openings. A through substrate via extends through the insulating layer, second passivation layer, passivation layer, and substrate. A side of the through substrate via and the second passivation layer have a gap that is filled with the first insulating layer. A conductive via extends through the first insulating layer and connecting to the conductive pad.

Abstract: A method and an apparatus of pulling single crystals are provided that allows adding dopants efficiently into the silicon melt without causing to generate dislocations and obtainment of single crystals with low resistivity, during forming the former half of a product portion after the formation of the shoulder, when pulled up from the silicon melt by the Czochralski method. The method includes steps of forming an inert gas flow G that flows from above toward the silicon melt M1 along the inside of a heat shield 7 disposed to surround the silicon crystal C to be grown in the furnace and expands in radial directions along the surface of the silicon melt and is exhausted to the outside of the furnace, gasifying a dopant in the furnace, discharging the gasified dopant into the inside of the heat shield, and flowing the gasified dopant carried by the inert gas flow.

Abstract: Provided is an acoustic device having front and rear surfaces, and the front surface has sound outlet. The acoustic device includes: a metal enclosure housing; an acoustic component mounted in the housing, the acoustic component and the enclosure housing cooperate to form front and rear sound cavities, and the front sound cavity is communicated with the sound outlet; and an isolation component mounted in the rear sound cavity, and the isolation component and the enclosure housing enclose to define a filling cavity filled with sound-absorbing material. The isolation component closely fits outer surface of the acoustic component, the isolation component is provided with hollow portion to enable the outer surface of the acoustic component to be exposed to the filling cavity, and the hollow portion is filled with the sound-absorbing material. With the arrangement of the hollow portion, the acoustic device is filled with more sound-absorbing material, improving acoustic performance.

Abstract: A display panel includes: a base; a pixel defining layer disposed on a side of the base; a plurality of light-emitting devices disposed on a side of the base; and at least one connection portion disposed on a side of the pixel defining layer away from the base. The pixel defining layer has a plurality of first openings. At least a portion of each light-emitting device is located in a first opening. An orthogonal projection of a connection portion on the base is located within an orthogonal projection of the pixel defining layer on the base. A surface of the connection portion away from the base has a plurality of protrusions, and the connection portion is configured to diffusely reflect external ambient light incident into the display panel.

Abstract: The present invention relates to a positive electrode active material which makes it possible to improve the electrochemical properties and stability of a positive electrode active material including a lithium composite oxide by adjusting the direction of a concentration gradient of a metal element of the lithium composite oxide, and a lithium secondary battery using a positive electrode including the positive electrode active material.

Abstract: A texture recognition apparatus and an opposite substrate are provided. The texture recognition apparatus includes a light source array, an image sensor array and a light shielding layer. The light source array includes a plurality of light sources; the image sensor array includes a plurality of image sensors, an orthographic projection of the light shielding layer on a plane where the light source array is located is between two adjacent light sources, an orthographic projection of the light shielding layer on a plane where the image sensor array is located at least partially overlaps with the plurality of image sensors; the light shielding layer has at least one opening, and at least a part of an orthographic projection of the first opening on the plane where the image sensor array is located is at least on one side of the first image sensor or overlaps with the first image sensor.

Abstract: A driving circuit of fluid pump module includes a microprocessor, a primary boost circuit, and a pump driving circuit is provided. The microprocessor receives an output signal with a large-width variable rectangular waveform, a driving voltage, a first detection current-feedback signal, and a second detection current-feedback signal. The primary boost circuit converts an inputted driving voltage into a direct current with a certain high voltage. The pump driving circuit receives the certain high voltage and is connected with the microprocessor to receive the voltage control signal and the pulse-width modulation (PWM) signal. The secondary boost circuit receives the certain high voltage to boost the certain high voltage into a working voltage for the fluid pump. The operation driving circuit receives the working voltage and provides the pulse-width modulation signal for the fluid pump through the second detection current-feedback signal.