Abstract: A method for encrypting a message by a host device includes requesting, by the host device, a message key from a secure device and generating, by the secure device, the message key using a secret key stored in the secure device and which is not communicated to the host device. The method further includes the prior steps of requesting, by the host device, a token from the secure device and generating the token by the secure device, and transmitting the token to the host device. The requesting, by the host device, of the message key includes transmitting the token. The generating, by the secure device, of the message key is preceded by checking the legitimacy of the token.

Abstract: The invention relates to a method for manufacturing a transistor comprising the preparation of a stack of layers of the semiconductor on insulator type comprising at least one substrate on which an insulating layer and an initial semiconductor layer are successively disposed. The method includes the formation of at least one oxide pad extending from a top face of the insulating layer, the formation of an additional layer made from semiconductor material covering the oxide pad and intended to form a channel for the transistor, the formation of a gate stack above the oxide pad, and the formation of a source and drain on either side of the gate stack.

Abstract: A method for manufacturing a polymer bladder assuring the internal sealing of a tank vis-à-vis a pressurized fluid which is contained therein, wherein said polymer is a thermosetting polymer, and said method comprises at least one step of polymerizing at least two precursor compounds of said thermosetting polymer carried out in a mould in rotation. A tank for storing a pressurized fluid for example a type IV tank comprising said polymer bladder.

Abstract: A process for making at least one porous area (ZP) of a microelectronic structure in at least one part of an conducting active layer (6), the active layer (6) forming a front face of a stack, the stack comprising a back face (2) of conducting material and an insulating layer (4) interposed between the active layer (6) and the back face (2), said process comprising the steps of: a) making at least one contact pad (14) between the back face (2) and the active layer (6) through the insulation layer (2), b) placing the stack into an electrochemical bath, c) applying an electrical current between the back face (2) and the active layer (6) through the contact pad (14) causing porosification of an area (ZP) of the active layer (6) in the vicinity of the contact pad (14), d) forming the microelectronic structure.

Abstract: Device including a substrate including at least one microelectronic and/or nanoelectronic structure (NEMS) having a sensitive portion and a fluid channel. The fluid channel includes two lateral walls, an upper wall connecting the two lateral walls, a lower wall formed by the substrate, and at least two openings in order to provide a circulation in the fluid channel, with the openings being defined between the two lateral walls, with the structure being located inside the fluid channel. Electrical connection lines extend between the structure and the outside of the fluid channel, with the connection lines being carried out on the substrate and passing under the lateral walls. The device also includes an intermediate layer having a planar face in contact with base faces of said lateral walls. The connection lines are at least partially covered by the intermediate layer at least immediately above base faces of the lateral walls.

Abstract: Infrared detection device comprising a gas detection device comprising: a resistive layer, a first portion of which is able to emit infrared radiation able to be absorbed by the gas to be detected, and a second portion of which is thermally coupled to a first element for the thermoresistive transduction of said infrared radiation; a substrate comprising an electronic circuit for controlling and reading the gas detection device; portions of electrically conductive material electrically connecting the first portion and the first thermoresistive transduction element to the electronic circuit, and providing mechanical holding of the first and second portions opposite the substrate so that a distance between the first portion and the substrate is substantially equal to a distance between the second portion and the substrate.

Abstract: A semiconducting structure configured to receive electromagnetic radiation, a method for manufacturing such a structure, and a semiconductor component, the semiconductor structure including: a first semiconducting area of a first type of conductivity, a second semiconducting area of a second type of conductivity opposite to the first type of conductivity, the second area being in contact with the first area to form a semiconducting junction. The second area includes a portion for which a concentration of majority carriers is at least ten times less than a concentration of majority carriers of the first area. The second area and its portion are essentially made in a first cavity configured to focus in the first cavity at least one portion of the electromagnetic radiation.

Abstract: A method for preselecting a router in a LLN (Lower power and Lossy Network) network from a plurality of nodes in which each router node transmits to the other router nodes of the LLN network within direct radio range of the router node an announcement message, and, upon receiving the announcement message, each of the other router nodes compares its current status with respect to a router node with the status indicated in the announcement message, and configures its status depending on the comparison so that a single node from among the nodes of the LLN network within direct radio range of the router node transmits to the root node a configuration request MER_Request as a multicast router for data from or intended for the host node.

Abstract: A method of production of a field-effect transistor from a stack of layers forming a semiconductor-on-insulator type substrate, the stack including a superficial layer of an initial thickness, made of a crystalline semiconductor material and covered with a protective layer, the method including: defining, by photolithography, a gate pattern in the protective layer; etching the gate pattern into the superficial layer to leave a thickness of the layer of semiconductor material in place, the thickness defining a height of a conduction channel of the field-effect transistor; forming a gate in the gate pattern; forming, in the superficial layer and on either side of the gate, source and drain zones, while preserving, in the zones, the initial thickness of the superficial layer.

Abstract: A method of producing a microelectronic device in a substrate comprising a first semiconductor layer, a dielectric layer and a second semiconductor layer, comprising the following steps: etching a trench through the first semiconductor layer, the dielectric layer and a part of the thickness of the second semiconductor layer, thus defining, in the first semiconductor layer, one active region of the microelectronic device, ionic implantation in one or more side walls of the trench, at the level of the second semiconductor layer, modifying the crystallographic properties and/or the chemical properties of the implanted semiconductor, etching of the implanted semiconductor such that at least a part of the trench extends under a part of the active region, —filling of the trench with a dielectric material, forming an isolation trench surrounding the active region and comprising portions extending under a part of the active region.

Abstract: The invention relates to a display screen and its manufacturing process. The display screen of the invention comprises: a substrate made of a plastic; at least one transparent heating element; and at least one thermochromic compound, and is characterized in that the at least one transparent heating element comprises at least one optionally functionalized metal nanowire. The invention in particular has applications in the electronics industry.

Abstract: Process for fabrication of a micromechanical and/or nanomechanical structure comprising the following steps, starting from an element comprising a support substrate and a sacrificial layer: a) formation of a first layer, at least part of which is porous, b) formation on the first layer of a layer made of one (or several) materials providing the mechanical properties of the structure, called the intermediate layer, c) formation on the intermediate layer of a second layer, at least part of which is porous, d) formation of said structure in the stack composed of the first layer, the intermediate layer and the second layer, e) release of said structure by at least partial removal of the sacrificial layer.

Abstract: A system for data processing with management of a cache consistency in a network of processors including cache memories, the network including plural nodes for access to a main memory interconnected with one another, a set of directories being distributed between nodes of the network, each directory including a table of correspondence between cache lines and information fields on the cache lines. The system includes a first sub-network for interconnection of the nodes with one another, implementing a first message transmission protocol providing read/write access to the directories during any passage in the corresponding nodes of a message passing through the first sub-network, and a second sub-network for interconnection of the nodes with one another, implementing a second message transmission protocol, the second protocol excluding any read/write access to the directories during any passage in the corresponding nodes of a message passing through the second sub-network.

Abstract: An electronic device including at least: a first HEMT transistor, bias means able to at least reverse bias the first HEMT transistor by applying an electric voltage VSD of a positive value between a source of the first HEMT transistor and a drain of the first HEMT transistor, and wherein the first HEMT transistor is able to be ON when a value of an electric voltage VGD between a gate of the first HEMT transistor and the drain of the first HEMT transistor is higher than a value of a threshold voltage Vth of the first HEMT transistor, the electronic device having, during a forward biasing, a behaviour similar to that of a forward biased or reverse biased Zener diode.

Abstract: A method for producing an electrical contact of a semiconductor device, including: depositing an optically transparent electrically conductive layer on a face of the device; depositing first and second dielectric layers on the layer, in which the second dielectric layer can be selectively laser etched; selectively laser etching the second dielectric layer, forming a first opening; producing a second opening aligned with the first opening in the first dielectric layer; depositing an electrically conductive material on the optically transparent electrically conductive layer through the second opening such that portions of the electrically conductive material are deposited on the second dielectric layer, around the first opening; and etching parts of the second dielectric layer which are not covered with portions of the electrically conductive material.

Abstract: A bolometric detector including at least: a substrate; a membrane suspended above the substrate by support elements; an absorber element comprising at least one MIM structure formed by a lower metal element, an upper metal element and a dielectric element arranged between the lower metal element and the upper metal element; a thermometer element comprising at least one thermometric material; wherein the membrane includes at least the upper metal element of the MIM structure and the thermometric material, and wherein the thermometric material is part of the dielectric element of the MIM structure.

Abstract: A method and system are provided for etching a layer to be etched in a plasma etching reactor, including: forming a reactive layer by injection of at least one reactive gas to form a reactive gas plasma, which forms, together with the layer to be etched, a reactive layer which goes into the layer to be etched during etching of said layer to be etched, wherein the reactive layer reaches a steady state thickness upon completion of a determined duration of said injection; said injection being interrupted before said determined duration has elapsed so that, upon completion of the forming of the reactive layer, the thickness of the reactive layer is smaller than said steady state thickness; and removing the reactive layer by injection of at least one inert gas to form an inert gas plasma, which makes it possible to remove only the reactive layer.

Abstract: A concentration sensor for at least one given gas comprising at least one suspended structure (2) with respect to a support, said suspended structure (2) being of an electrically conductive material and said structure having a low heat response time, means for biasing said suspended element (2) and means (8) for measuring the variation of the electric voltage at the terminals of the suspended structure (2), the biasing means (6) being formed by an alternating current source the intensity of which heats the suspended structure (2) and the frequency of which gives rise to a phase shift between a signal of the biasing means and a signal measured by the measuring means, and means for determining a phase shift variation due to a gas concentration variation and means for determining the concentration variation of said gas from the phase variation.

Abstract: A solar plant including a solar field for production of steam, a turbine using steam, and an excess steam storage and draw off system. The system includes a latent heat thermal storage module and a liquid displacement thermal storage module including a liquid volume and a steam blanket. The modules are connected together so that the steam produced passes through the steam blanket before passing through the latent heat module, condensing, to be injected in the liquid volume, the lower part of the liquid volume being connected to the solar field and to an outlet of the turbine to let in or return cold liquid. The liquid volume acts as a liquid displacement reservoir.

Abstract: A method for processing ultrasonic signals includes: controlling a plurality of emission transducers for L successive emissions of ultrasonic waves; controlling N reception transducers to simultaneously receive and for a predetermined time, for each successive emission, N measurement signals; obtaining an array of ultrasonic time signals of size L×N, each coefficient Ki,j(t) of this array representing the measurement signal received by the j-th reception transducer due to the i-th emission; and denoising the time signal array by removing some of the singular values and associated singular vectors obtained from a singular value decomposition of a frequency signal array obtained by transforming this time signal array, and by reconstructing a denoised time signal array based on unremoved singular values and singular vectors.