Abstract: An electrochemical and photovoltaic secondary cell formed by an electrolyte provided between a first electrode and a second electrode, the second electrode including a layer based on a semi-conductor material configured to convert photons into electrons.

Abstract: A method for processing ultrasonic signals includes: controlling a plurality of emission transducers for L successive emissions of ultrasonic waves; controlling N reception transducers to simultaneously receive and for a predetermined time, for each successive emission, N measurement signals; obtaining an array of ultrasonic time signals of size L×N, each coefficient Ki,j(t) of this array representing the measurement signal received by the j-th reception transducer due to the i-th emission; and denoising the time signal array by removing some of the singular values and associated singular vectors obtained from a singular value decomposition of a frequency signal array obtained by transforming this time signal array, and by reconstructing a denoised time signal array based on unremoved singular values and singular vectors.

Abstract: The invention provides a method of etching a crystalline semiconductor material (114), the method being characterized in that it comprises: at least one ion implantation performed by implanting a plurality of ions (121) in at least one volume (113) of the semiconductor material (114) in such a manner as to make the semiconductor material amorphous in the at least one implanted volume (113), and as to keep the semiconductor material (114) in a crystalline state outside (112) the at least one implanted volume (113); and at least one chemical etching for selectively etching the amorphous semiconductor material relative to the crystalline semiconductor material, so as to remove the semiconductor material in the at least one volume (113) and so as to keep the semiconductor material outside (112) the at least one volume (113).

Abstract: A semi-conducting component including a semi-conducting layer of a first conductivity type including a plurality of semi-conducting zones of a second conductivity type opposite that of the semi-conducting layer, and an insulating layer. The component further includes a first bias mechanism configured to bias the semi-conducting layer and a second bias mechanism configured to bias a semi-conducting zone. The first bias mechanism includes a conducting layer in contact with the insulating layer and which includes passageways for each second bias mechanism with the spacing between the conducting layer and the second bias mechanism which is located facing the corresponding semi-conducting zone.

Abstract: A method for producing a capacitor stack in one portion of a substrate, the method including: forming a cavity along a thickness of the portion of the substrate from an upper face of the substrate, depositing a plurality of layers contributing to the capacitor stack onto the wall of the cavity and onto the surface of the upper face, and removing matter from the layers until the surface of the upper face is reached. The forming of the cavity includes forming at least one trench and, associated with each trench, at least one box. The at least one trench includes a trench outlet that opens into the box. The box includes a box outlet that opens at the surface of the upper face, and the box outlet being shaped to be larger than the trench outlet.

Abstract: The invention relates to an electrical system comprising a plurality of modules that can be powered independently withy current, characterised in that it further comprises: a module configured to apply to each of the modules a current which is modulated by a signal specific to the module, an acoustic sensor enabling the measurement of an acoustic signal that accompanies an electrical arc generated by a defective module, a treatment unit configured to identify a signature of one of the specific signals in the acoustic signal measured by the acoustic sensor in order to identify the defective module. The invention also relates to a method for locating faults in such an electrical system.

Abstract: Infrared detection device comprising at least one first bolometer able to detect at least a part of infrared radiation intended to be received by the infrared detection device, and a reading and compensation circuit of a first electrical signal intended to be outputted by the first bolometer, with the reading and compensation circuit comprising at least: one second bolometer coupled electrically to the first bolometer and insensitive to the infrared radiation intended to be received by the infrared detection device; one first reading circuit of said first electrical signal from which is subtracted a second electrical signal intended to be outputted by the second bolometer; one second reading circuit of an electrical voltage at the terminals of the first bolometer and/or of an electrical voltage at the terminals of the second bolometer, comprising a plurality of switches.

Abstract: The invention relates to a receptacle for storage of an object, containing a proximity sensor capable of detecting an action by a user close to or in contact with a surface of the receptacle, a transducer and a control circuit comprising an input coupled to the proximity sensor and an output connected to the transducer, the control circuit being configured to generate a control signal to be sent to the transducer when a user action is detected by the proximity sensor, characterized in that it also comprises an unpacking detector coupled to the control circuit and in that the control circuit is also configured to changeover from a standby mode during which it periodically awakens to query the unpacking detector, to a detection mode during which it periodically checks the state of its input coupled to the proximity sensor, after the unpacking detector has detected removal of the receptacle from a packaging.

Abstract: The invention relates to a method for manufacturing a microelectronic device comprising, on the base of a substrate: a formation of a first layer of a first semiconductor material on a first region of a top surface of the substrate; a formation of a second layer of a second semiconductor material, on a second region, distinct from the first region, of the top surface of the substrate; it comprises, after the formation of a second layer: a formation of a first metallic layer above the first layer; a formation of a first contact layer of a first intermetallic compound or solid solution comprising at least one portion of the first layer and at least one portion of the first metallic layer; a formation of a first sacrificial layer by oxidation, over a thickness e1, of an upper portion of the first contact layer, and the formation of a second sacrificial layer by oxidation, over a thickness e2, of an upper portion of the second layer; removal of the whole of the second sacrificial layer so as to expose a residu

Abstract: The invention relates to a receiver of a signal built as successive frames, comprising a plurality of antennas, a signal receiving chain associated with each antenna, and a power amplifier on each receiving chain to which is applied a gain set point provided by a gain control unit characterized in that it comprises an antenna selecting unit configured to select one antenna from the plurality of antennas, and a time synchronizing unit configured to determine the frame start and end times in the signal received by the selected antenna. The antenna selecting unit is further configured to assess the gain set point of each receiving chain and to eliminate from the selection each antenna associated to a receiving chain which gain set point in not in a steady state.

Abstract: A semiconductor device is provided, including two semiconductor nanowires superimposed one on top of the other or arranged next to one another, spaced one from the other and forming channel regions of the semiconductor device, a dielectric structure entirely filling a space between the nanowires and which is in contact with the nanowires, a gate dielectric and a gate covering a first of the nanowires, sidewalls of the nanowires and sidewalls of the dielectric structure when the nanowires are superimposed one on top of the other, or covering a part of the upper faces of the nanowires and a part of an upper face of the dielectric structure when the nanowires are arranged next to one another, and wherein the dielectric structure comprises a portion of dielectric material with a relative permittivity greater than or equal to 20.

Abstract: The invention relates to a measuring circuit for a multisensory detector characterized in that it comprises: a plurality of detection branches mounted in parallel, with each one comprising at least two dipoles mounted in series, and, at least one reference branch, comprising a polarizing source and at least two dipoles mounted in series; with said reference branch being connected in parallel to at least two detection branches among the plurality of branches, so as to form a Wheatstone bridge with each one of the detection branches among the plurality of detection branches.

Abstract: Method for producing a microelectronic device comprising: a) the formation on an insulating layer of a semi-conductor on insulator type substrate, a first semi-conductor block covered with a first strain zone adapted to induce a compressive strain in said first block and a second semi-conductor block covered with a second strain zone adapted to induce a tensile strain in said second block, the first block and the second block each being formed of a lower region based on amorphous semi-conductor material, covered with an upper region of crystalline semi-conductor material in contact with one of said strain zones, b) the re-crystallization of said lower region of said first block and of said second block while using said upper region of crystalline material as starting zone for a recrystallization front.

Abstract: This processing method provides the ability to process a volume mode with an object intended to be added to or subtracted from said model. The volume model includes points arranged according to a spatial grid in a first reference system, each point being assigned an intensity value. The object has points positioned in a second reference system that is distinct from the first reference system. The method includes the calculation, for each point of the object, of an image point in the first reference system using a transfer function. The method further includes the modification of the intensity of points of the volume model by applying a correction function associated with each image point, the value of the correction function at a point of the volume model being dependent on the position of said point relative to said image point with which said correction function is associated.

Abstract: Method for modifying the strain state of a block of a semiconducting material comprising steps for: making a lower region of a block of semiconducting material resting on a substrate amorphous, while the crystalline structure of an upper region of the block in contact with the lower region is maintained, making a creep annealing with a sufficient thermal budget to enable creep of the lower region without recrystallizing the material of this lower region, making a recrystallization annealing of the lower region.

Abstract: The present application relates to a device for controlling a micro-electromechanical system MEMS or a nano-electromechanical system NEMS comprising a feedback loop provided with: means (130) for digitizing at least one analog signal from said MEMS or said NEMS and for delivering a given digital signal, a programmable delay module (170) for inducing a given delay selected from a plurality of predetermined delays to said given digital signal and delivering one or more delayed digital signals according to said given delay to excitation means of the MEMS or NEMS.

Abstract: Method of hermetically sealing a hole with a fuse material, comprising the following steps: applying a portion of wettable material onto a surface such that it completely surrounds the hole made through said surface and is located outside the hole, or completely surrounds a first part of said surface corresponding to a location of the hole; applying a portion of fuse material on the portion of wettable material and on a second part of said surface located around the portion of wettable material; reflowing the portion of fuse material to form a bump of fuse material which has a shape corresponding to a part of a sphere, which is fastened only to the portion of wettable material and which hermetically plugs the hole; wherein the hole is made in said surface before reflowing the portion of fuse material.

Abstract: A method for forming spacers of a transistor gate having an active layer surmounted by the gate, including forming a porous layer covering the gate and having a dielectric constant equal to or less than that of silicon oxide, forming a protective layer covering the porous layer and the gate, etching the protective layer anisotropically to preserve residual portions of the protective gate only at the flanks of the gate, forming a modified layer by penetration of ions within the porous layer anisotropically to modify the porous layer over its entire thickness above the gate and above the active layer and so as not to modify the entire thickness of the porous layer on the flanks of the gate, the latter being protected by protective spacers constituting porous spacers, and removing the modified layer by etching to leave the protective spacers in place.

Abstract: A sealing method between two elements includes producing a first sealing material on a face of a first of the two elements, producing a second sealing material, different from the first sealing material, on one face of a second of the two elements, securing the two elements by thermocompression of the sealing materials against each other at a temperature Tc below the melting temperatures of the first and second sealing materials, the first and second sealing materials are chosen such that they each have at least one phase able to react with the phase of the other sealing material by interdiffusion of the components of the phases of the sealing materials during the securing step and forming at least one other solid phase having a melting temperature above the temperature Tc.

Abstract: An optical arbiter device, between conflicting access requests to a shared resource sent by N processing nodes of a network-on-chip system, comprising at least one primary optical arbiter bus, at least one optical source for transmitting a first optical signal in said at least one primary optical arbiter bus, and a sequence of N optical arbiter cells coupled with the primary optical arbiter bus, each of these optical arbiter cells being associated with a processing node and having means for selecting the processing node with which said each optical arbiter cell is associated by re-routing the first optical signal. The optical source is designed to transmit a second optical signal propagated in an opposite direction to the first optical signal along the primary optical arbiter bus. Furthermore, the selection means of each optical arbiter cell are designed to perform said selection by re-routing the first and second optical signals.