Abstract: A system for detecting and locating a disturbance of a medium includes a medium for propagating bulk acoustic waves, a mechanism for emitting bulk acoustic waves in the medium, a mechanism for receiving the bulk acoustic waves after propagation thereof in the medium, configured to supply a reception signal from the acoustic waves received, and a mechanism for detecting and locating the disturbance in the medium from the reception signal. The medium includes a dermis layer of elastic material with a thickness locally deformable by the disturbance.

Abstract: A network interface for a network on chip resource having a communication controller including recording means, and designed to transmit data to another network interface when a quantity of data present in the recording means reaches a predetermined threshold, and where the communication controller also includes means to force a transmission of data present in the said recording means when the quantity of this data is below the predetermined threshold.

Abstract: The invention relates to a method of estimating the time of arrival of a UWB pulse contained in an RF signal using a double quadrature receiver. The time of arrival is obtained from an estimate of the phase of the RF signal ((?RF(?))) relative to the local oscillator signal in the first stage of the quadrature mix, and an estimate of the phase of the baseband signal ((?BB(?)) relative to the first/second signal of the orthogonal base used in the second stage of the quadrature mix.

Abstract: A method for producing a porous fuel including uranium, optionally plutonium, and optionally at least one minor actinide, the method including: a) compacting a mixture including a first type of agglomerate including uranium oxide in a form of uranium dioxide UO2, optionally plutonium oxide, and optionally at least one minor actinide oxide, and a second type of agglomerate including uranium oxide in a form of triuranium octaoxide U3O8, optionally plutonium oxide, and optionally at least one minor actinide oxide; b) reducing the compacted mixture in a reducing medium, to reduce all or part of the triuranium octaoxide U3O8 into uranium dioxide UO2, the second type of agglomerate being prepared prior to the compacting by a series of specific operations.

Abstract: The invention relates to a method of estimating the tritium dose absorbed by a person exposed to an environment with a tritium atmosphere. Applications of the invention include particularly dosimetric monitoring of tritium in persons exposed to an environment containing a significant amount of tritium during their activities, as is the case for the nuclear industry.

Abstract: The invention relates to an avalanche photodiode-type semiconductor structure (1) intended to receive electromagnetic radiation in a given wavelength. The structure comprises a first semiconductor zone (210) with a first type of conductivity with a first longitudinal face (201), said first zone (210) being made of mercury-cadmium telluride of the CdxHg1-xTe type with a cadmium proportion x that is varied. The structure (1) also comprises at least one second semiconductor zone (310) in contact with the first zone (210), and a third semiconductor zone (410) in contact with the second zone (310). The first zone (210) comprises a doping element, such as arsenic, of which the concentration is varied alternately in a direction substantially perpendicular to the first longitudinal face (201) between a so-called low concentration and a so-called high concentration. The invention also relates to a process for producing a structure (1) according to the invention.

Abstract: The invention relates to a method of etching a layer of porous dielectric material, characterized in that the etching is performed in a plasma formed from at least one silicon-based gas mixed with oxygen (O2) and/or nitrogen (N2) so as to grow a passivation layer all along said etching, at least on flanks of the layer of porous dielectric material and wherein the silicon-based gas is taken from all the compounds of the type SixHy for which the ratio x/y is equal or greater than 0.3 or is taken from all the compounds of the following types: SixFy and SixCly, where x is the proportion of silicon (Si) in the gas and y is the proportion of fluorine (F) or chlorine (Cl) or hydrogen (H) in the gas.

Abstract: Avalanche diode-type semiconductor structure (1) intended to receive electromagnetic radiation in a given wavelength. The structure (1) comprises a semiconductor multiplication zone (310) including a majority carrier concentration, and delimitation means suitable for laterally delimiting the multiplication zone (310). The delimitation means comprise a semiconductor zone (410) surrounding the multiplication zone (310) and comprising a forbidden energy gap greater than the forbidden energy gap of the major part (320) of the multiplication zone (310), said zone (410) having a type of conductivity opposite that of the multiplication zone (310) with a majority carrier concentration at least 10 times greater than that of the multiplication zone (310). The invention also relates to a process for producing an avalanche photodiode-type semiconductor structure.

Abstract: The invention relates to a method for forming spacers for a gate of a field effect transistor, the gate being situated above a layer of semiconductor material, comprising a step of forming a layer of nitride covering the transistor gate, the method being characterized in that it comprises: after the step of forming the layer of nitride, at least one step of modifying the layer of nitride by implantation of light ions in the layer of nitride in order to form a modified layer of nitride, the step of modification being performed so as not to modify the layer of nitride over its entire thickness at flanks of the gate, the step of modifying the layer of nitride by implantation being performed using a plasma comprising the light ions; at least one step of removing the modified layer of nitride by means of a selective etching of the modified layer of nitride vis-à-vis said semiconductor material and vis-à-vis the non-modified layer of nitride

Abstract: A display device including a deformable surface, including: plural actuators including mobile elements that can be moved to deform the deformable surface, the mobile elements being distributed in a space occupied by the deformable surface; a set of position sensors for sensing the position of at least one touch, and distributed in the space occupied by the deformable surface; and an elastic flexible membrane placed against the mobile elements, extending through the space occupied by the deformable surface and configured to accompany deformation of the deformable surface. The set of sensors is secured to the elastic flexible membrane and distributed in a regular manner in the space occupied by the deformable surface in an array of electricity conductors configured to accompany deformations of the elastic flexible membrane.

Abstract: A method for making a conducting structure comprising steps of: forming on a given face of the support comprising at least one conducting element, at least one area for absorbing stresses based on a dielectric material, forming at least one aperture in said dielectric material by applying a mold on said dielectric material, said aperture being provided with inclined walls relatively to a normal to the main plane of said support, the bottom of said aperture revealing said conducting element, filling said aperture with a conducting material.

Abstract: The invention relates to a method of forming a microfluidic array comprising at least one channel of semi-circular section, comprising the following steps: bringing into contact a first liquid (7) with an array of electrodes (3) of a microfluidic chip (1) comprising at least one pair of substantially parallel and coplanar electrodes (3a, 3b) arranged on a substrate (4), activating said array of electrodes so as to actuate by liquid dielectrophoresis LDEP said first liquid to form a fluidic structure (9) comprising at least one fluidic finger (9a), and using said fluidic structure as a mould to form said microfluidic array by solidification or hardening of a second liquid (11) deposited on the microfluidic chip and hugging the shape of said fluidic structure.

Abstract: The invention relates to the field of production in thin coatings of electronic devices and/or MEMS and relates to an improved method for forming a pattern in a thin SiARC anti-reflective coating, comprising the doping by deposition of such SiARC coating covered with a resist pattern through a protective coating of the resist pattern, then etching the doped zones of the SiARC coating (FIG. 3c).

Abstract: According to one embodiment, the invention relates to a method for the anisotropic etching of patterns in at least one layer to be etched through a hard mask comprising carbon in an inductive-coupling plasma etching reactor (ICP), the method being characterized in that the hard mask is made from boron doped with carbon (B:C), and in that, prior to the anisotropic etching of the patterns in said layer to be etched through the hard mask of carbon-doped boron (B:C), the following steps are performed: realization of an intermediate hard mask situated on a layer of carbon-doped boron intended to form the hard mask made from carbon-doped boron (B:C), etching of the layer of carbon-doped boron (B:C) through the intermediate hard mask in order to form the hard mask made from carbon-doped boron (B:C), the realization of the intermediate hard mask and the etching of the hard mask made from carbon-doped boron (B:C) being done in said inductive coupling plasma etching reactor (ICP).

Abstract: This method for estimating patterns (M?PF,D?PF) to be printed by means of electron-beam lithography, comprises the following steps: printing (100), in a resin, a set of calibration patterns (MCF, DCF); measuring (120) characteristic dimensions (CD) of this set; supplying an estimation (140) of the point spread function (PSF) based on the characteristic dimensions (CD) measured; estimating (160) the patterns (M?PF,D?PF) to be printed by convoluting the point spread function (PSF) supplied with an initial value of the patterns (MPF,DPF). Furthermore, each calibration pattern printed includes a central zone exposed to the electron beam and a plurality of surrounding concentric zones with rotational symmetry. The characteristic dimensions measured are characteristic dimensions (CD) of the central zones of the patterns.

Abstract: Membrane device comprising a support (4), a membrane suspended on the support (4), a first actuator (6) in contact with the membrane designed to apply a force on the membrane, a second actuator (10) in contact with the membrane designed to apply a force on the membrane, means of determining the position of the membrane relative to the support and control means of the first (6) and second (10) actuators, said control means applying a deformation signal to one of the first (6) and second (10) actuators to deform the membrane and applying a control signal to the other of the first (6) and second (10) actuators to control displacement of the membrane, application of the control signal being determined by the membrane position.

Abstract: The present invention relates to ionic liquids comprising, as cation, a specific phosphonium cation, as anion, a formiate anion, which can be used, alone or as a mixture, to constitute electrolytes for energy storage devices.

Abstract: A method of forming a microelectronic device comprising, on a same substrate, at least one electro-mechanical component provided with a suspended structure and at least one transistor, the method comprising a step of release of the suspended structure from the electromechanical component after having formed metal interconnection levels of components.

Abstract: A method for absolute measurement of flatness of surfaces of optical elements. In the method, an interferometer having a measurement axis is used for applying a three-flat method by three optical elements, by conducting actual measurements on the elements, and planes of the elements are reconstructed by an iterative processing operation in which measurements are simulated and simulated measurements are compared with the actual measurements. At least two actual measurements are made after having performed a rotation around the measurement axis and/or a translation perpendicularly to the measured axis, of a measured optical element relatively to the other.

Abstract: A thermal management system configured to be installed between a heat source and a heat sink, including a first heat conductor and a second heat conductor, a thermal switch configured to allow or prevent thermal connection between the first and second heat conductors, the thermal switch including at least one thermally conductive material that can connect the first and second conductors by a change in its volume, and the thermal switch including a controller configured to transfer thermal energy to the phase-change material to change a connection state. The connection is made when the heat source goes above a critical temperature, since the connection enables a heat flux to be established between the heat source and the heat sink.