Abstract: A thermal management device including a first face configured to be in contact with a hot source and a second face opposite the first face configured to be in contact with a cold source, and at least one network of cells filled with a solid/liquid phase-change material located in a cavity between the first and second faces, wherein the cells include walls formed of carbon nanotubes, wherein the nanotubes extend roughly from the first to the second face, thermally connecting the first face to the second face.

Abstract: A magnetic resonance optical pumping isotropic magnetometer including a laser, a gas filled cell, a HF discharge circuit, RF magnetic field generating coils surrounding the cell, a first frequency regulating mechanism of an RF generator, a second polarization regulating mechanism of the laser beam, and a third regulating mechanism of the direction of the RF magnetic field. The direction of polarization of the laser beam at an inlet of the cell is orthogonally aligned with the magnetic field to be measured by virtue of a liquid crystal polarization rotator. The magnetometer is well-adapted to an integrated arrangement.

Abstract: A method is provided for producing a semiconductor layer having at least two different thicknesses from a stack of the semiconductor on insulator type including at least one substrate on which an insulating layer and a first semiconductor layer are successively disposed, the method including etching the first layer so that said layer is continuous and includes at least one first region having a thickness less than that of at least one second region; oxidizing the first layer to form an electrically insulating oxide film on a surface thereof so that, in the first region, the oxide film extends as far as the insulating layer; partly removing the oxide film to bare the first layer outside the first region; forming a second semiconductor layer on the stack, to form, with the first layer, a third continuous semiconductor layer having a different thickness than that of the first and second regions.

Abstract: This method for detecting activity (A) of a physical system carrying a motion sensor comprises the following steps: extracting (100) a sequence (M) of measurements provided by the motion sensor; deducing (102) therefrom an observation sequence (O) calculated on the basis of the measurement sequence (M); determining (104) the activity (A) of the physical system in the form of a sequence of states corresponding to the observation sequence, using a statistical model of components of the observation sequence in view of a plurality of possible predetermined states of the physical system. At least one component of the observation sequence (O) is calculated on the basis of a reference value ({circumflex over (?)}) of a vector representing a reference axis.

Abstract: An electromagnetic wave propagation disruption device with a metamaterial structure including: a plurality of conductive elements arranged on a top face of a substrate; a plurality of interconnection networks electrically interconnecting at least some of these conductive elements, wherein these networks are not electrically connected to each other. At least two of these networks are dimensioned differently to each other, thus involving that distances between interconnected conductive elements are different from one network to another, to generate phase shifts, between the conductive elements interconnected thereby, different from one network to the other. A ground plane with holes is arranged on a bottom face of the substrate and metallic vias are formed in the substrate, each of them including an upper end in contact with a conductive elements and a lower end arranged facing one of the holes of the ground plane, with no electrical contact with the ground plane.

Abstract: Method for making at least one first suspended part of a microelectronic or nanoelectronic structure from a monolithic part of a first substrate, the method comprising the following steps: make a first etching with a first given depth in the monolithic substrate to define the suspended part, deposit a protective layer on at least the side edges of the first etching, make a second etching with a second depth in the first etching, make a physicochemical treatment of at least part of the zone located under the suspended structure so as to modify it, and release the suspended part by removal of the physicochemically treated part.

Abstract: A method for implementing a system containing at least one memory device including a plurality of non-volatile memory cells each including a phase-change material configured to change state reversibly between at least an amorphous state and a crystalline state having different electrical resistances. The method includes steps of manufacturing the memory cells, including the formation of a layer of a phase-change material having an original amorphous state at the end of the steps of manufacturing the memory cells. The method for implementing the embedded system includes, after the steps of manufacturing the memory cells, at least the following steps: (i) pre-programming the memory device consisting of an electrical recrystallization of a selection of memory cells from their original amorphous state; and (ii) assembling the pre-programmed memory device in the system during which the device is subjected to a temperature of between 240° C. and 300° C.

Abstract: A method and an electronic component including: a substrate including at least a hole at least partially going through a thickness of the substrate; an electrically conducting element positioned in the hole and configured to form an electric connection through the hole, wherein the electrically conducting element includes an electrically conducting and self-supporting pillar with a height oriented according to the thickness of the substrate; and a space between at least a part of the wall of the hole and a part of a peripheral wall of the pillar.

Abstract: A method for characterization of a surface topography, comprising application of the following steps: measurement of the surface topography; first fitting of data output from the measurement of the surface topography, made from an order m first equation; filter height of data output from application of the first fitting; determine the data fitting coefficients for data output from the application of filtering, from an order n second equation; second fitting of data output from application of the first fitting, made from the order n second equation and previously determined coefficients; n and m being positive integers greater than or equal to 1 and such that n?m.

Abstract: A direct bonding method between at least a first layer (104) comprising silicon oxide having a thickness equal to or higher than about 10 nm and a second layer (108) of material having hydrophilicity, comprising at least the steps of: making the first layer (104) on a first substrate (102) such that the absorbance value of this first layer (104), at a vibration frequency of silanol bonds present in the first layer (104) equal to about 3660 cm?1, is equal to or higher than about 1.5×10?5 nm?1, the silanol bonds being formed in at least part of the thickness of the first layer (104) which is equal to or higher than about 10 nm; direct bonding between the first layer (104) and the second layer (108).

Abstract: A method for etching a desired complex pattern in a first face of a substrate, including: simultaneous etching of at least a first and a second sub-pattern through the first face of the substrate, the etched sub-patterns being separated by at least one separating wall, a width of the first sub-pattern being greater than a width of the second sub-pattern at the first face, and a depth of the first sub-pattern being greater than a depth of the second sub-pattern in a direction perpendicular to the said first face; and removing or eliminating the separating wall to expose the desired complex pattern.

Abstract: A process for encapsulating a microelectronic device, comprising the following steps: make the microelectronic device on a first substrate; make one portion of a first material not permeable to the ambient atmosphere and permeable to a noble gas in a second substrate comprising a second material not permeable to the ambient atmosphere and the noble gas; secure the second substrate to the first substrate, forming at least one cavity inside which the microelectronic device is encapsulated such that said portion of the first material forms part of a wall of the cavity; inject the noble gas into the cavity through the portion of the first material; hermetically seal the cavity towards the ambient atmosphere and the noble gas.

Abstract: A device includes a substrate carrying an array of diodes, organized in rows and columns, and a peripheral substrate contact is arranged on at least one side of the array. The substrate includes one or more buried conducting lines electrically connected to the peripheral substrate contact and being positioned between at least two neighbouring columns of diodes and/or between at least two neighbouring rows of diodes.

Abstract: A process for controlling a unit for torrefaction of biomass particles including: measurement of a mean diameter of the biomass particles; as a function of the mean diameter, calculation of a maximum torrefaction temperature for which the ratio of a characteristic time of the torrefaction to a characteristic time of the heat transfer at the level of the particles is equal to a minimum value; adjusting the torrefaction temperature to a value less than or equal to the maximum torrefaction temperature; adjusting the torrefaction time to a value such that the final yield by weight of the torrefaction is equal to a predefined target value.

Abstract: A method for manufacturing a transistor includes forming a stack of semiconductor on insulator type layers including at least one substrate, surmounted by a first insulating layer and an active layer to form a channel for the transistor; forming a gate stack on the active layer; producing a source and a drain including forming, on either side of the gate stack, cavities by at least one step of etching the active layer, the first insulating layer, and part of the substrate selectively to the gate stack to remove the active layer, the first insulating layer, and a portion of the substrate outside regions situated below the gate stack; forming a second insulating layer on the bared surfaces of the substrate, to form a continuous insulating layer with the first insulating layer; baring of the lateral ends of the channel; and the filling of the cavities by epitaxy.

Abstract: A system for designing a digital circuit including: a digital circuit simulator based on a file containing a functional description of the digital circuit; a mechanism estimating an output variable from the digital circuit when executing a test bench supplied to the simulator; event counters, events being detected using control signals provided by the simulator when executing the test bench; and a mechanism building at least one calculation model of the digital circuit output variable based on a sequence of estimation data of the output variable and output data of the event counters. The building mechanism can assign a plurality of possible modes to the output variable and build a different output variable calculation model for each possible mode.

Abstract: A mechanical connection between two parts of a microelectromechanical and/or nanoelectromechanical structure forming a pivot with an axis of rotation pivot includes two first beams with an axis parallel to the pivot axis, the first beams configured to work in torsion, and two second beams with an axis orthogonal to the axis of the first beams, the second beams configured to work in bending, each one of the first and second beams being connected at their ends to the two parts of the structure.

Abstract: The present invention relates to a method for preparing graphene substantially free of contamination by metallic, magnetic, organic and inorganic impurities, and also to the use of the resulting graphene for the production of transparent electrodes, batteries, electron-acceptor or electron-donor materials, in particular in photovoltaic systems, photovoltaic panels, transistor channels, in particular in electronics, nonlinear emitters or absorbers of infrared photons, current-conducting electrodes, anti-static coatings, chemical detectors, vias and interconnections in electronics, current-conducting cables, and solar cells.

Abstract: A method of manufacturing at least one semiconducting micro- or nano-wire used for formation of an optoelectric structure, optoelectronic structures including the micro- or nano-wires, and a method enabling manufacture of the photoelectronic structures. The method includes providing a semiconducting substrate, forming a crystalline buffer layer on the substrate, the buffer layer having a first zone over at least part of its thickness composed mainly of magnesium nitride in a form MgxNy, and forming at least one semiconducting micro- or nano-wire on the buffer layer.

Abstract: A radiation imager including: a detector block including at least one detector configured to emit an optical signal from incident radiation to be imaged; a reading block that converts the optical signal into an electrical signal, including a plurality of photodetectors; a plurality of resin portions between the detector block and the photodetectors, in contact with the detector block and in contact with the photodetectors, the resin portions being separated by air, the resin portions including at least a part with cross-section increasing from the detector block to the reading block.