Abstract: An electronic device includes first and second quantum dots disposed along a direction, first and second control gates associated with said quantum dots, and a magnet configured to generate two opposite spin states at each of the first and second quantum dots. The magnet includes first and second magnetic domains distributed along the direction and separated by a domain wall. The magnetic domains respectively have first and second magnetisations of opposite directions in the direction. The first and second quantum dots thus receive first and second magnetic field gradients.

Abstract: An electronic system in package, including at least: a support; one or more chips mechanically and electrically coupled to a front face of the support; an encapsulation material covering the front face of the support and encapsulating the chip(s); several side protection elements, comprising an opaque material and laterally surrounding the chip(s) and configured to form a barrier at least against laser attacks made through side faces of the electronic system in package that are substantially perpendicular to the front face of the support; and wherein the side protection elements are disposed in the encapsulation material or in one or more first blocks of material distinct from the support and disposed in the encapsulation material.

Abstract: A memory programming circuit for programming a non-volatile memory device having an array structure includes a plurality of rows, each row having a row index and comprising one or more memory units, each memory unit being configured to receive one or more input signals and to deliver one or more output signals, the memory programming circuit comprising: a first source line connected to the top electrode of the memory units comprised at rows of odd row indices, and a second source line connected to the top electrodes of the memory units comprised at rows of even row indices.

Abstract: A co-handling robot has a mixed-forced control law providing high effector sensitivity and enabling interaction with the body of the robot. A multi-axis force sensor is carefully positioned between the end member (flange) of an industrial co-handling robot and the tool supported thereby. A modified increased force control law is implemented in the robot controller by introducing a saturation function.

Abstract: A microelectronic device includes a first transistor having a first drain and a first source, a first doped zone constituting one from among the first drain and the first source, a second doped zone constituting the other from among the first drain and the first source, a second transistor comprising a second drain and a second source, a third doped zone constituting the second source or the second drain, a fourth doped zone constituting the other from among the second drain and the second source, a dielectric layer having an upper face in contact with the four doped zones and a rear gate in contact with a lower face of the dielectric layer. The second doped zone and the fourth doped zone form a common electrode.

Abstract: The invention relates to an electromechanical microsystem comprising an electromechanical transducer, a deformable membrane and a cavity hermetically containing a deformable medium, preserving a constant volume under the action of an external pressure change. The deformable membrane forms a wall of the cavity and has at least one free zone being deformed. The electromechanical transducer is configured, such that its movement is a function of said external pressure change, and conversely. The free zone engages with an external member, such that its deformation induces, or is induced by, a movement of the external member. The electromechanical microsystem is thus capable of moving the external member or of capturing a movement of this member.

Abstract: A device for multi-spectral photo-detection in the infrared includes a photo-detection stage and a filtering stage superimposed on top of one another. The photo-detection stage includes a read circuit, an active layer incorporating a matrix of photodiodes, and a support substrate, superimposed together in that order. The filtering stage includes filtering areas of a first type, each formed of an interference filter capable of transmitting the wavelengths of a first spectral band and of blocking the wavelengths of a second spectral band, and filtering areas of a second type, capable of transmitting at least part of the wavelengths of the second spectral band. The device further includes an adhesive layer, located between the photo-detection stage and the filtering stage, on the support substrate side, and an anti-reflective coating, located between the adhesive layer and the support substrate.

Abstract: A method for obtaining at least one nitride layer based upon a III-N material includes the successive steps of providing a stack having a support substrate and a plurality of pads, each pad including at least one basal section and one germination section carried by the basal section; modifying the basal section so as to form a modified basal section having a lower rigidity that the basal section before modification; and epitaxially growing a crystallite from the top of at least some of the pads of an assembly and continuing the epitaxial growth so as to form the nitride layer on pads on the assembly.

Abstract: An assembly of solar cells is provided with a connection structure arranged opposite and between a peripheral zone of a first solar cell and a second peripheral zone of a second solar cell. The connection structure provides increased mechanical flexibility and includes an oblong conductive portion and a set of conductive blocks distributed over the oblong conductive portion, alternately over a first region of the oblong conductive portion and over a second region of the oblong conductive portion opposite the first region.

Abstract: An optical particle detector including at least one channel intended to receive a fluid carrying at least one particle, and across which light rays are intended to pass such that the light rays are partially scattered by the at least one particle, a plurality of photodetectors capable of receiving said scattered light rays, wherein the detector includes at least one optical waveguide configured to collect, at least at one entrance of the waveguide, light rays that were not scattered by the at least one particle and having crossed the channel, and to reinject the unscattered light rays into the channel through at least one exit of the waveguide.

Abstract: An electronic power module includes at least a semiconductor chip having at least one electronic power component and two metal layers between which the semiconductor chip is directly secured. At least a first of the two metal layers forms a redistribution layer having several distinct metal portions, each electrically connected to at least one electrical contact pad of the semiconductor chip, and/or at least one second of the two metal layers includes at least one first structured face arranged against the semiconductor chip and having at least one pad formed in a part of its thickness.

Abstract: A matrix includes a plurality of volatile switches, each of the volatile switches including an active layer made of an OTS material, the plurality of volatile switches being divided into two groups in such a way as to form a message, each of the volatile switches of the first group having been initialized beforehand by an initialization voltage, none of the volatile switches of the second group having been initialized beforehand, the message being formed by the initialized or non-initialized states of each of the switches of the matrix.

Abstract: A memory circuit for storing parsimonious data and intended to receive an input vector of size Iz, includes an encoder, a memory block comprising a first memory region and a second memory region divided into a number Iz of FIFO memories, each FIFO memory being associated with one component of the input vector, only non-zero data being saved in the FIFO memories, a decoder, the encoder being configured to generate an indicator of non-zero data for each component of the input vector, the memory circuit being configured to write the non-zero data of the input data vector to the respective FIFO memories and to write the indicator of non-zero data to the first memory region, the decoder being configured to read the outputs of the FIFO memories and the associated indicator in the first memory region.

Abstract: Disclosed is an illuminating panel, in particular integrated into a traversable surface, including, in succession, a first protective film arranged on the front face of the device, a first exterior encapsulating film, an interior encapsulating film, a second exterior encapsulating film, and a second protective film arranged on the rear face of the device, one of the films chosen from among the first exterior encapsulating film, the interior encapsulating film and the second exterior encapsulating film coating at least one active element suitable for emitting light. Also disclosed is a method for producing such a panel and a functional traversable surface with such a panel.

Abstract: A device includes gate-all-around transistors and method for manufacturing such a device. A method for manufacturing a microelectronic device includes at least two transistors each comprising a channel in the shape of a wire extending in a first direction x, a gate surrounding said channel, a source and a drain, said transistors being stacked in a third direction z and each occupying a level nz (z=1 . . . 4) of given altitude in the third direction z.

Abstract: An electrochemical device may be formed by assembly by stacking preassembled modules, each of these modules being produced as a usual stack of electrochemical cells. The manufacture of preassembled modules can make it possible to produce electrochemical devices with a large number of electrochemical cells, without the bracing problems present and excessive crushing courses that are encountered in the cell stacks according to the prior art, i.e., in a single block.

Abstract: A microelectronic device includes a field-effect n-MOS transistor, a first N-doped zone, constituting one from among the drain and the source of the n-MOS transistor and a second N-doped zone, constituting the other from among the drain and the source of the n-MOS transistor. The device further includes a field-effect p-MOS transistor, a first P-doped zone, constituting one from among the drain and the source of the p-MOS transistor, a dielectric layer in contact with the doped zones and a rear gate. The n-MOS transistor and the p-MOS transistor are separated by a PN junction.

Abstract: The invention relates to a method for operating in hot stand-by mode a fuel cell (SOFC) or a high-temperature electrolysis or co-electrolysis reactor (1), with a stack of solid oxide elementary electrochemical cells (SOEC), the method comprising, during a given period of absence of an electric current respectively flowing out of or applied to the stack or when it is sought to raise or lower the temperature of the cell or reactor, a step of supplying compartments on the side of the hydrogen/water electrodes (H2/H2O) with pulses of a safety gas at regular time intervals during the given period, or when the cell voltage drops below a threshold value, so as to renew the gas(es) present in said compartments.

Abstract: The invention relates to a lensless imaging device, comprising an emitting part comprising a light source (1) configured to emit a light beam in a direction of emission and intended to follow an optical path, a receiving part incorporating an electronic circuit board (3) bearing a sensor (2) having a planar capture surface (20) intended to receive said light beam in a direction normal to said capture surface, said optical path being subdivided into several successive optical sections, each optical section corresponding to a distinct direction of propagation of the light beam.

Abstract: A Resistive random access memory (ReRAM) comprising: an array (M1) of cells (Cij) each connected to a first supply line (SL) set at a first supply potential, each cell being provided with a resistive element (1, 2) and a selection transistor (Ms1, Ms2), a read circuit (400) associated with a given row of cells and comprising a sense amplifier (440) of the latch type connected to a second supply line (45) set at a second supply potential, the device further comprising: a circuit for controlling read operations configured to during a reading: apply to said first bit line (BL0) a potential equal to said first supply potential (GND, VDD) while isolating the first bit line (BL0) from said sense amplifier (440), then, couple the first bit line (BL0) to said sense amplifier (440).