Abstract: A switch based on a phase-change material including: a region made of said phase-change material coupling first and second conduction electrodes of the switch; and a rotator of the polarization of a laser signal for activating the switch, located in front of a surface of the region made of said phase-change material.

Abstract: A bolometric detector comprising a plurality of pixels each including a bolometric plate suspended above a substrate by support pillars, the detector further including, for at least one of said pixels, a guided-mode filter including a planar waveguide resting on the support pillars, and a diffraction grating located on and in contact with the waveguide.

Abstract: An image sensor including a plurality of pixels formed inside and on top of a semiconductor substrate, each pixel including: a photosensitive area formed in the semiconductor substrate; a peripheral insulating trench vertically extending across the substrate, from an upper surface of the substrate, and laterally delimiting the photosensitive area; a charge collection area; a transfer region located in the substrate and vertically extending between the charge collection area and the photosensitive area; and a transfer gate vertically extending across the substrate, from the upper surface of the substrate, deeper than the charge collection area, wherein the charge collection area laterally extends from the transfer gate all the way to the peripheral insulating trench.

Abstract: A device including a transfer substrate including electric connection elements; and a plurality of elementary chips bonded and electrically connected to the transfer substrate, each elementary chip including at least one LED and an electronic circuit for controlling said at least one LED, the device further including comprising, associated with at least one elementary chip, a capture or actuation element external to the elementary chip, bonded and electrically connected to the transfer substrate, each elementary chip including an electronic circuit for reading from or controlling the capture or actuation element associated with the chip.

Abstract: The present description concerns a switch including: first, second, third, and fourth conductive regions; a first region made of a phase-change material coupling the first and second conductive regions; a second region made of a phase-change material coupling the second and third conductive regions; and a third region made of a phase-change material coupling the second and fourth conductive regions.

Abstract: A device including a sensor of a light signal. The sensor includes a first level stacked on a second level. Each level including comprises an array of pixels, each including at least one photodetector, each photodetector of the first level being stacked on a photodetector of the second level. Each level is associated with a frequency, the frequency of the second level being equal to k times the frequency of the first level. A circuit is configured to calculate a distance for each pixel and a depth map of a scene.

Abstract: A method for manufacturing a power electronic device including the following successive steps: a) providing a silicon semiconductor substrate, the substrate having a front face and a rear face, opposite the front face; b) forming, by epitaxial growth from the front face of the substrate, a first continuous layer of at least one nitrided transition metal coating the front face of the substrate; and c) forming, on the first layer, by epitaxial growth from the front face of the substrate, at least one second layer of a III-V material, preferably III-N.

Abstract: A polarimetric image sensor formed inside and on top of a semiconductor substrate, the sensor including: —a plurality of pixels, each including a photodetector formed in the semiconductor substrate; —a polarization router including a two-dimensional metasurface arranged on the side of an illumination surface of the photodetectors, the metasurface including a two-dimensional array of pads; and—a plurality of first microlenses extending in front of a pair of adjacent pixels of the sensor.

Abstract: A polarimetric image sensor formed inside and on top of a semiconductor substrate, the sensor including: —a plurality of pixels, each comprising a photodetector formed in the semiconductor substrate; —a polarizing filter arranged on the side of an illumination surface of the photodetectors, the filter including, for each pixel, a polarizing structure; and—a polarization router comprising a two-dimensional metasurface arranged on the side of the polarizing filter opposite to the photodetectors, the metasurface including a two-dimensional array of pads.

Abstract: A method including the following successive steps: a) forming, on a surface of a support substrate, a first layer made of a material selected from among a lamellar dichalcogenide or a lamellar chalcogenide including a stack of sheets; b) forming, by physical vapor deposition on the side of said surface of the support substrate, a second layer made of a first III-N semiconductor material coating the first layer; and c) carrying out a thermo-chemical treatment of the first layer resulting, in the first layer, in a conversion of van der Waals bonds between the sheets of the first layer into covalent bonds.

Abstract: A method of manufacturing an electronic device comprising the following successive steps: a) forming a structure comprising a diode stack disposed on a first substrate, and a sacrificial layer of semiconductor material interposed between the first substrate and the diode stack; b) transferring the structure to a second substrate; and c) removing the first substrate by electropolishing the sacrificial layer by applying a bias voltage to the sacrificial layer via the diode stack.

Abstract: A polarizing filter intended to be arranged in front of an image sensor including a plurality of pixels, the filter including, for each pixel, a polarizing structure including a plurality of parallel metal bars, each bar being coated with an absorbing stack including: —a tungsten layer; —a silicon layer, coating the tungsten layer; and —a dielectric layer, coating the silicon layer.

Abstract: A method of manufacturing an optoelectronic device including at least one LED and at least one photodiode, including the following steps: a) forming a semiconductor support stack including at least one doped semiconductor layer; b) simultaneously forming, during a common epitaxy step, an active emission semiconductor stack of the LED and an active reception semiconductor stack of the photodiode; c) forming trenches delimiting first and second support pads; and d) porosifying the doped semiconductor layer in the first support pad without porosifying this layer in the second support pad, or porosifying the doped semiconductor layer in the second support pad without porosifying this layer in the first support pad.

Abstract: A device including a substrate; a first layer resting on the substrate, the first layer including a first portion and a second portion mobile with respect to each other; and a ring-shaped optical resonator defined in a second layer. The resonator includes a first portion fixed to a first anchor pad connected to the first portion of the first layer and a second portion fixed to a second anchor pad connected to the second portion of the first layer.

Abstract: A photonic device including a substrate and a structure. The structure includes a support, an optical resonator fixed to the support, and a portion of a waveguide optically coupled to the resonator and fixed to the support. The structure is suspended above the substrate. The portion of the waveguide and the resonator are arranged on a same side of the support. The support is a first portion of a layer. A second portion of the layer is fixed to the substrate. The support is mechanically coupled to the second portion of the layer.

Abstract: A method of manufacturing a device for acquiring a 2D image and a depth image, the method comprising the following steps: a) forming, on a first face of a first support semiconductor substrate, a first sensor comprising a plurality of depth pixels; b) forming, in the first support substrate, on the side of a second face of the first substrate opposite the first face, at least one optical concentrator; c) forming, in and on a second semiconductor substrate, a second sensor comprising a plurality of 2D image pixels; and d) placing the second sensor right next the first support substrate on the side of the second face of the first support substrate.

Abstract: A visible and infrared image sensor, including: a first active layer for detecting visible radiation, in which a plurality of visible detection pixels are defined; and superimposed on the first active layer, a second active layer for detecting infrared radiation, in which a plurality of infrared detection pixels are defined, the sensor further including, on the side of the face of the second active layer opposite the first active layer, a control integrated circuit superimposed on the first and second active layers, wherein the sensor includes isolation trenches extending vertically through at least part of the thickness of the second active layer, and laterally delimiting in the second active layer islands or mesas forming the infrared detection pixels.

Abstract: An interposer including capacitors having a density greater than 700 nF/mm{circumflex over (?)}2. advantageously greater than 1 ?F/mm{circumflex over (?)}2. the interposer being adapted to being bonded to a chip by hybrid bonding.

Abstract: The present description relates to a light emitting and receiving device including:-a light-emitting diode including a first active layer, a first electrode in contact with the lower face of the first active layer, and a second electrode in contact with the upper face of the first active layer; and opposite the light-emitting diode, on an emission face of the light-emitting diode, a light conversion and detection element comprising a second active layer, a third electrode in contact with the lower face of the second active layer, and a fourth electrode in contact with the upper face of the second active layer.

Abstract: A method for manufacturing a power electronic device including the following successive steps: a) providing a silicon semiconductor substrate, the substrate having a front face and a rear face, opposite the front face; b) forming, by epitaxial growth from the front face of the substrate, a first continuous layer of at least one nitrided transition metal coating the front face of the substrate; and c) forming, on the first layer, by epitaxial growth from the front face of the substrate, at least one second layer of a III-V material, preferably III-N.