Abstract: A three-phase switching unit including three identical switching cells, each including at least one first electrically-controlled switch in series with at least one second spontaneous conduction switch, wherein the cells are arranged, around a conductive central area of a substrate, with a symmetry of revolution of order 3.

Abstract: An automated system of regulation of a patient's blood glucose, including: a blood glucose sensor; an insulin injection device; and a processing and control unit capable of predicting, from a physiological model, the future evolution of the patient's blood glucose over a prediction period, and of controlling the insulin injection device by taking the prediction into account, wherein the processing and control unit is capable of: a) calibrating the physiological model, taking into account the blood glucose measured by the sensor during a past observation period; b) at the end of the calibration, calculating an indicator representative of the error between the blood glucose estimated from the model and the real blood glucose measured by the sensor; and c) adjusting the prediction period by taking into account the value of the indicator.

Abstract: An image sensor including a plurality of pixels, each including: a semiconductor photodetection region; a metal region arranged on a first surface of the semiconductor region; a band-pass or band elimination interference filter arranged on a second surface of the semiconductor region opposite to the first surface; and between the semiconductor region and the metal region, a portion of the absorbing layer made of a material different from that of the semiconductor region, the absorbing layer being capable of absorbing, in a single passage, more than 30% of an incident radiation at the central wavelength of the pass band or of the stop band of the interference filter.

Abstract: A method of manufacturing an LED display device, including the successive steps of: a) transferring, onto a planar surface of a support plate made of a transparent material having its other surface structured and defining a plurality of microlenses, a plurality of semiconductor chips, each including at least one LED; and b) forming a network of conductive interconnection tracks contacting the chips by their surface opposite to the support plate.

Abstract: A temperature sensor supplying a measurement signal varying linearly to within 10% as a function of the temperature at least over a temperature range, including an oscillator supplied by a supply voltage and supplying a first oscillating signal, said oscillator including first MOS transistors, the voltage at each internal node of the oscillator having a dynamic equal to the supply voltage, the measuring signal corresponding to the supply voltage.

Abstract: A distributed device for the detection of a substance is disclosed, comprising: a distributed optical excitation source (21) including a first optical fiber (22) having a plurality of extraction regions (24), each extraction region (24) being adapted to extract part of the light carried by the first optical fiber (22) from said fiber; and a distributed acoustic sensor (25) including a second optical fiber (26).

Abstract: The invention concerns a measurement unit including: an electric ambient energy recovery generator; an element of capacitive storage of the electric energy generated by the generator; an electric battery; a first branch coupling an output node of the generator to a first electrode of the capacitive storage element; a second branch coupling a first terminal of the battery to the first electrode of the capacitive storage element; and an active circuit capable of transmitting a radio event indicator signal each time the voltage across the capacitive storage element exceeds a first threshold, wherein, in operation, the capacitive storage element simultaneously receives a first charge current originating from the generator via the first branch and a second charge current originating from the battery via the second branch.

Abstract: A calibration method for calibrating a reception chain comprising an input amplifier of an analogue-to-digital converter, and including the following successive steps: determining a rest gain as a function of the average power of the noise present on a digital signal from said converter; and setting the gain of the input amplifier at said rest gain when the average power of said digital signal is lower than a first threshold.

Abstract: A blood sugar regulation system including: a blood sugar sensor; an insulin injection device; and a processing and control unit predicting the future evolution of the blood sugar based on a physiological model and accordingly controlling the insulin injection device, wherein the processing and control unit is capable of: a) implementing a calibration of the model by taking into account a history of the measured blood sugar; b) at the end of the calibration step, determining whether the model is satisfactory or not based on at least one numerical indicator representative of the error between the blood sugar estimated based on the model and the real blood sugar measured by the sensor; and c) if the quality of the model is not satisfactory, controlling the insulin injection device without taking into account the predictions made from the model.

Abstract: A memory comprising an array of memory cells, each memory cell comprising: first and second resistive storage elements each having at least first and second terminals; and a first transistor having: a first main conducting node connected to the first terminal of the first resistive element and to a first column/row line of the array; and a second main conducting node connected to the first terminal of the second resistive element and to a second column/row line of the array.

Abstract: An optoelectronic device including a light emitting component and a field-effect transistor, the optoelectronic device including a first semiconductor layer made of a III-V or II-VI compound doped a first conductivity type; an active layer of the light-emitting component; and a second semiconductor layer made of the III-V or III-VI compound doped a second conductivity type opposite the first type, the active layer being sandwiched between the first and second semiconductor layers, wherein the channel of the field-effect transistor is located in the first semiconductor layer, the first semiconductor layer being uninterrupted between the field-effect transistor and the lightemitting component.

Abstract: A memory circuit including: a plurality of elementary storage cells arranged in an array of rows and of columns; a data input/output port; an address input port; a mode selection input port; and an internal control circuit configured to: read a mode selection signal applied to the mode selection port; when the mode selection signal is in a first state, read an address of a row from the address input port and implement a read or write operation in this row; and when the mode selection signal is in a second state, read from the data input/output port an instruction signal and implement an operation including the simultaneous activation in read or write mode of at least two rows.

Abstract: A method of manufacturing an optoelectronic device, including the successive steps of: a) transferring, onto a surface of a control integrated circuit including a plurality of metal connection pads, an active diode stack including at least first and second doped semiconductor layers of opposite conductivity types, so that the second layer of the stack is electrically connected to the metal pads of the control circuit; and b) forming in the active stack trenches delimiting a plurality of diodes connected to different metal pads of the control circuit.

Abstract: A circuit for counting photons, including: an input terminal intended to be connected to a detector of ionising radiation; an analogue stage for generating a pulsed signal, each pulse of which has an amplitude proportional to the energy released by an interaction of at least one photon in the detector; and a digital stage including: at least one first comparator for comparing the amplitude of the pulses to a first threshold; a differentiator circuit for determining periods in which the derivative of the pulse signal is of a given sign; at least one first logic gate for combining the outputs of the first comparator and the differentiator circuit; and at least one first counter for counting the number of pulses present on the output of the combining element.

Abstract: The invention relates to aA process for producing conductive connections to an electronic chip, comprising the following steps: a) depositing an insulating layer on one face of a wafer; b) producing a layer based on at least one metal covering the insulating layer and equipped with first apertures; c) etching second apertures in the insulating layer in the extension of the first apertures by plasma etching in a plasma based on at least one halogen-containing compound; d) vacuum annealing the entire structure obtained after step c); and e) forming, after step d), the conductive connections in the second apertures.

Abstract: A device including: a paper film including cellulose fibers, a first surface, and a second surface opposite to the first surface; and at least one first heat-sensitive resistor having a negative temperature coefficient, the first heat-sensitive resistor including a first electrode arranged on the first surface, a second electrode arranged on the second surface, the first and second electrodes having at least first portions facing each other, the first heat-sensitive resistor further including the portion of the paper film arranged between the first portions facing each other. The invention also relates to a method of manufacturing such a device.

Abstract: An AC/DC conversion circuit, including: four bidirectional switches forming an H bridge; a capacitor connected between input nodes of the bridge; a capacitor connected between output nodes of the bridge; and a control circuit capable of controlling the bridge alternately to a first configuration where first and second diagonals of the bridge are respectively conductive and non-conductive, and to a second configuration where the first and second diagonals are respectively non-conductive and conductive, the control circuit being capable, during a phase of transition between the first and second configurations, of: turning off the switches of the first diagonal; and for each switch of the second diagonal, turning on the switch only when the voltage thereacross takes a zero value.

Abstract: A CMOS pixel including: a photodiode having a terminal connected to a potential GND and another terminal connected to a sense node by a first MOS transistor; a second MOS transistor connecting the sense node to a potential VDDH; and a third MOS transistor having its gate connected to the sense node, the transistors having a same gate insulator thickness, wherein the third transistor has a gate length and/or width smaller than those of the first and second transistors, wherein difference VDDH-GND is greater than the nominal voltage of the third MOS transistor, and wherein the body or drain region of the third transistor is connected to a potential VL between potentials VDDH and GND.

Abstract: A process for fabricating an electronic device including a substrate and microwires or nanowires resting on the substrate, the process including successive steps of covering the wires with an insulating layer, covering the insulating layer with an opaque layer, depositing a first photoresist layer over the substrate between the wires, etching the first photoresist layer over a first thickness by photolithography, etching the first photoresist layer remaining after the preceding step over a second thickness by plasma etching, etching the portion of the opaque layer not covered by the first photoresist layer remaining after the preceding step, etching the portion of the insulating layer not covered by the opaque layer, removing the first photoresist layer remaining after the preceding step, and removing the opaque layer.

Abstract: A voltage selection circuit, including: first and second nodes of application of first and second input voltages; a third output voltage supply node; first and second MOS transistors respectively coupling the first and third nodes and the second and third nodes; and a control circuit capable of keeping the first and second transistors either respectively on and off or respectively off and on, the control circuit including a feedback loop from the third node to the gate of the first transistor and being capable, during a transition phase, of controlling the first transistor in linear operating region to apply a DC voltage ramp to the third node.