Abstract: Semiconductor packages and more particularly mounting arrangements for semiconductor packages and related methods are disclosed. Mounting arrangements include metal pads on substrates and selectively placed solder material on various portions of the metal pads. Semiconductor packages may be initially positioned on the solder material and on portions of the metal pads. During solder reflow, the solder material may spread along portions of the metal pads that were previously uncovered by the solder material and effectively move the semiconductor packages. Specific arrangements of metal pad and selective solder material patterns may be provided that control directions of such movements during reflow. Resulting mounting positions of semiconductor packages may be provided with spacings that are closer than limits of pick and place equipment used to initially position the semiconductor packages.

Abstract: Light-emitting diode (LED) packages, and more particularly to a light collector for light mixing in LED packages to improve the far field emission pattern (FFP) of the LED packages are disclosed. The LED package can include one or more LED chips with different wavelength ranges, and the light collector placed over the LED chips can have a reflective surface, save for a reduced aperture through which the light form the LED chips can be emitted after mixing in the light collector. The LED package can also include a lens to further improve the FFP. In an embodiment the light collector can include diffuser material to facilitate the mixing of the light within the light collector. The LED package with the light collector mixes multiple emission point sources into a single point source, or reduced-area source, that considerably improves the FFP of multi-colored LED chips of the LED package.

Abstract: A light-emitting diode (LED) chip with reflective layers having high reflectivity is disclosed. The LED chip may include an active LED structure including an active layer between an n-type layer and a p-type layer. A first reflective layer is adjacent the active LED structure and comprises a plurality of dielectric layers with varying optical thicknesses. The plurality of dielectric layers may include a plurality of first dielectric layers and a plurality of second dielectric layers of varying thicknesses and compositions. The LED chip may further include a second reflective layer that includes an electrically conductive path through the first reflective layer. An adhesion layer may be provided between the first reflective layer and the second reflective layer. The adhesion layer may comprise a metal oxide that promotes improved adhesion with reduced optical losses.

Abstract: Light-emitting devices including solid-state light-emitting devices, light-emitting diode (LED) devices, and LED packages with support elements for improved near-field and far-field emissions are disclosed. LED chips may be mounted to support elements in a manner that directs light through the support elements in desired emission directions. Support elements include optical structures that spread and mix light laterally within the support element. Optical structures include various light-altering layers, such as light-diffusing layers or light-reflective layers, that are arranged to effectively increase internal reflections for lateral spreading of light. Patterned arrangements of light-altering layers include portions that mask direct emissions for LED chips, thereby redistributing emissions laterally to increase near-field and/or far-field uniformity across an increased portion of emitting surfaces.

Abstract: Light-emitting devices including solid-state light-emitting devices, light-emitting diode (LED) devices, and LED packages with support elements for improved near-field and far-field emissions are disclosed. LED chips may be mounted to support elements in a manner that directs light through the support elements in desired emission directions. Support elements include optical structures that spread and mix light laterally within the support element. Optical structures include interior mixing chambers bounded by light-altering layers, such as light-diffusing layers or light-reflective layers, that effectively increase internal reflections within the mixing chambers for lateral spreading of light. Support elements as described may be well suited for low profile LED devices where device heights are less than or equal to device widths.

Abstract: Semiconductor packages and more particularly mounting arrangements for semiconductor packages and related methods are disclosed. Mounting arrangements include metal pads on substrates and selectively placed solder material on various portions of the metal pads. Semiconductor packages may be initially positioned on the solder material and on portions of the metal pads. During solder reflow, the solder material may spread along portions of the metal pads that were previously uncovered by the solder material and effectively move the semiconductor packages. Specific arrangements of metal pad and selective solder material patterns may be provided that control directions of such movements during reflow. Resulting mounting positions of semiconductor packages may be provided with spacings that are closer than limits of pick and place equipment used to initially position the semiconductor packages.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly identification markers for LED packages and related methods are disclosed. Identification markers may include materials incorporated within LED packages that are transparent in a visible spectrum but detectable when illuminated with light outside the visible spectrum. When radiated with light outside the visible spectrum, identification markers may provide light in the visible spectrum. Alternatively, identification markers may provide light outside the visible spectrum that is detectable with equipment capable of detecting nonvisible light. Identification markers are generally configured to not be readily visible under inspection as a way to make LED packages more difficult for copying in counterfeit products.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly lumiphoric material structures for LED packages and related methods are disclosed. Cover structures with predefined color points for LED packages may include multiple lumiphoric material structures that are bonded together and arranged within LED packages. Lumiphoric material structures may include preformed and hardened structures, such as phosphor-in-glass or phosphor-in-ceramic, that are bonded together to form cover structures. Certain lumiphoric material structures include multiple sublayers of varying quantities and/or compositions of lumiphoric materials. Lumiphoric material structures with targeted color points may also be reduced to powder form and mixed within a binder for application in LED packages.

Abstract: Lighting-emitting devices and more particularly light-emitting diode (LED) chips with multiple wavelength emissions and related methods are disclosed. LED chips include separately formed active LED structures that are bonded together to form a single LED chip capable of emitting multiple wavelengths. Each active LED structure may be separately patterned into a number of individual light-emitting junctions such that after bonding, a single LED chip includes multiple light-emitting junctions from multiple active LED structures. Patterns of individual light-emitting junctions may be selected so that when bonded together, emissions from different active LED structures may pass through LED chips with reduced interactions with one another. Certain aspects include vertical and horizontal offset positions for light-emitting junctions formed from different active LED structures.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and a semi-transparent metallic layer deposited on an LED chip that can dim a light output of the LED chip are disclosed. The thickness of the semi-transparent metal layer can be adjusted based on the desired dimming level. In an embodiment, the metallic layer can be deposited on top of a passivation layer over the LED structure, so that the metallic layer is not electrically coupled to the LED. The metallic layer can additionally cover the mesa sidewalls of the LED structure. The metallic layer can be titanium, or platinum, or other suitable metals in other embodiments. In an embodiment, the metallic layer can be deposited on to the passivation layer, where a length of time the metallic layer is deposited, can be based on the amount of dimming desired.

Abstract: Light-emitting devices including solid-state light-emitting devices, light-emitting diodes (LEDs), and LED packages with reinforcement materials and related methods are disclosed. Reinforcement materials may include fibers and/or particles that are incorporated in various elements of light-emitting devices to provide improved mechanical strength, reduced differences in thermal expansion, improved adhesion between various device elements, modified optical characteristics such as modified far field patterns, and/or improved manufacturability. Reinforcement materials may be provided within support elements on which LED chips are mounted. In certain aspects, the support elements may be light-transmissive to light emitted by the LED chips. Reinforcement materials may also be provided in laminate films are that provided on support elements. Such laminate films may provide build-up structures that form cavities for the LED chip, or the laminate films may conformally cover the LED chips.

Abstract: Light-emitting diode (LED) devices and, more particularly, frequency-controlled LED devices and related methods are disclosed. LED devices include frequency-controlled circuitry that controls changes to electrical activation of one or more LED chips based on changes to input signal frequencies. Input signals are provided in a pulsed manner and the frequency-controlled circuitry controls how long one or more LED chips are electrically activated during each pulse. In certain aspects, the frequency-controlled circuitry delays current flow through one or more LED chips according to a time delay. By adjusting the frequency of the input signal, the amount of time the one or more LED chips are electrically activated during each pulse is adjustable. Corresponding LED packages include LED chips and integrated frequency-controlled circuitry so that separate control for LED chips is provided without requiring separate input signals.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED packages for environmental indication are disclosed. LED packages include one or more LED chips and reactive materials that preferentially react with environmental ingress. After sufficient reactant exposure, the reactive materials may degrade and exhibit reduced electrical conductivity. Reactive material arrangements relative to electrical connections are provided so that the one or more LED chips either turn on, turn off, or lose brightness to provide visual indication of environmental reactants. Reactive materials may form electrical shorting paths that bypass one or more LED chips until sufficient reactant exposure when the shorting paths fail and the one or more LED chips are electrically activated.

Abstract: Light-emitting diode (LED) packages, and more particularly arrangements of multiple LED chips in LED packages are disclosed. Arrangements include different types, different dimensions, and/or different orientations of LED chips within LED packages and corresponding electrical connections. Further arrangements include individual cover structures having different dimensions for various LED chips to accommodate thickness variations of LED chips and/or thickness variations attributed to different elements of individual cover structures. Different cover structure elements may include lumiphoric materials, antireflective layers, filter layers, and polarization layers. By accounting for dimensional variations between LED chips and/or between cover structures within multiple-chip LED packages, aggregate light-emitting surfaces may be provided with improved emission uniformity.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly cover structure arrangements for packaged LED devices are disclosed. Cover structures include light-absorbing layers configured to absorb certain wavelengths of light while permitting other wavelengths to pass therethrough. Light-absorbing layers may include pigment materials of colors that absorb intended wavelengths of light. In certain aspects, an LED package may include an LED chip configured to emit light of a first peak wavelength and a cover structure that includes a light-absorbing layer with a pigment of a color that absorbs the first peak wavelength. Such an arrangement may be useful for embodiments that also include a lumiphoric material that converts a portion of the first peak wavelength to light of a second peak wavelength.

Abstract: Light-emitting diode (LED) devices and more particularly lens arrays in LED packages are disclosed. Lens arrays include one or more lens shapes positioned to receive light from LED chip arrays. Individual lenses of lens arrays may be separately formed in LED packages on various surfaces, such as on top surfaces of encapsulant layers that cover LED chip arrays. Shapes of individual lenses may be tailored to provide various emission patterns. Exemplary lens arrays in LED packages include all lenses of a same shape or variably shaped lenses within a same lens array. Differently shaped lenses may be arranged over LED chips of a same serially connected string so that emission patterns and/or colors may be dynamically adjusted during operation.

Abstract: Solid-state lighting devices including light-emitting diode (LED) chips and more particularly interconnect structures for improved LED chip performance are disclosed. Interconnect structures are disclosed within LED chips that are structured to increase perimeter contact areas within localized LED chip areas without substantial increases to overall areas occupied by the interconnect structures. By increasing contact perimeters of interconnects within a certain area, increased current injection efficiency may be provided. Interconnect structures for increased current injection are disclosed for both n-type layers and p-type layers. Interconnect structures may include patterned dielectric materials within interconnect openings and corresponding interconnects that are formed around the patterned dielectric materials. Additional interconnect structures include nested patterns and extensions that provide enhanced adhesion along LED chip perimeters.