Abstract: A logic gate module for performing logic functions including a MRAM cell including a magnetic tunnel junction comprising a sense layer, a storage layer, and a spacer layer. The MRAM cell has a junction resistance determined by the degree of alignment between a sense magnetization of the sense layer and the storage magnetization of the storage layer. The storage magnetization and the sense magnetization are switchable between m directions to store data corresponding to one of m logic states, with m>2, such that the MRAM cell is usable as a n-bit cell with n?2. The logic gate module further includes a comparator for comparing the junction resistance with a reference value and outputting a digital signal indicating a difference between the junction resistance and the reference value, such that logic functions can be performed.

Abstract: A MRAM-based magnetic device including an electrical interconnecting device including: a magnetic tunnel junction; a strap portion electrically connecting a lower end of the magnetic tunnel junction; a current line portion electrically connecting an upper end of the magnetic tunnel junction; an upper metallic stud electrically connecting a lower metallic stud through a via; the strap portion being in direct electrical contact with the via, such that a current passing in the magnetic tunnel junction flows directly between the strap portion and the via and between the via and the lower metallic stud or the upper metallic stud.

Abstract: A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.

Abstract: An apparatus has a reference magnetic tunnel junction with a high aspect ratio including a reference layer with magnetization along a minor axis and a storage layer with magnetization along a major axis. The storage layer magnetization is substantially perpendicular to the magnetization along the minor axis. The magnetization orientation between the minor axis and the major axis is maintained by shape anisotropy caused by the high aspect ratio.

Abstract: The present disclosure concerns a method of fabricating a magnetic tunnel junction suitable for a magnetic random access memory (MRAM) cell and comprising a first ferromagnetic layer, a tunnel barrier layer, and a second ferromagnetic layer, comprising: forming the first ferromagnetic layer; forming the tunnel barrier layer; and forming the second ferromagnetic layer; wherein said forming the tunnel barrier layer comprises depositing a layer of metallic Mg; and oxidizing the deposited layer of metallic Mg such as to transform the metallic Mg into MgO; the step of forming the tunnel barrier layer being performed at least twice such that the tunnel barrier layer comprises at least two layers of MgO.

Abstract: A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.

Abstract: A magnetic sensor cell includes a magnetic tunnel junction including a reference layer having a reference magnetization oriented parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. A magnetic device is configured for providing a sense magnetic field for aligning the sense magnetization. The sense layer magnetization is orientable between a direction parallel to the plane of the sense layer and a direction perpendicular to the plane of the sense layer when the sense magnetic field is provided. The magnetic sensor cell can be used for sensing an external magnetic field including a component oriented parallel to the plane of the sense layer and a component oriented perpendicular to the plane of the sense layer.

Abstract: Method for sensing an external magnetic field using a magnetic sensor cell including: a magnetic tunnel junction including a reference layer having a reference magnetization oriented parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. A field line is configured for passing a field current for providing a sense magnetic field adapted for aligning the sense magnetization. The sense layer magnetization is orientable between a direction parallel to the plane of the sense layer and a direction perpendicular to the plane of the sense layer when the sense magnetic field is provided. The external magnetic field includes an in-plane component oriented parallel to the plane of the sense layer and an out-of-plane component perpendicular to the plane of the sense layer. The method includes sensing the out-of-plane component; and sensing the in-plane component.

Abstract: Method for programming a magnetic device including a plurality of magnetic logical unit MLU cells using a single programming current, each MLU cell includes a storage magnetic layer having a storage magnetization that is pinned at a low threshold temperature and freely orientable at a high threshold temperature. A programming line is physically separated from each of the plurality of MLU cells and configured for passing a programming current pulse for programming any one of the plurality of MLU cells. The method includes: passing the programming current in the field line for heating the magnetic tunnel junction of each of the plurality of MLU cells at the high threshold temperature such as to unpin the second magnetization; wherein the programming current is further adapted for generating a programming magnetic field adapted for switching the storage magnetization of each of the plurality of MLU cells in a programmed direction.

Abstract: A multibit MRAM cell including a magnetic tunnel junction including a sense layer having a freely orientable sense magnetization; a tunnel barrier layer; and a synthetic antiferromagnet storage layer having a first and second storage layer. The sense magnetization induces a dipolar field having a magnitude above a spin-flop field of the storage layer. The MRAM cell also includes aligning means for aligning the sense magnetization in a plurality of distinct orientations such as to encode a plurality of distinct logic states in the MRAM cell. The present disclosure also concerns a method for operating the multibit MRAM cell.

Abstract: A mechanism is provided for fabricating a thermally assisted magnetoresistive random access memory device. A bottom thermal barrier is formed on a bottom contact. A magnetic tunnel junction is formed on the bottom thermal barrier. The magnetic tunnel junction includes a top ferromagnetic layer formed on a tunnel barrier. The tunnel barrier is formed on a bottom ferromagnetic layer. A top thermal barrier is formed on the top ferromagnetic layer. A top contact is formed on the top thermal barrier. The top contact is reduced to a first diameter. The tunnel barrier and the bottom ferromagnetic layer each have a second diameter. The first diameter of the top contact is smaller than the second diameter.

Abstract: A self-referenced MRAM cell including a reference layer having a fixed reference magnetization, a sense layer having a free sense magnetization, a tunnel barrier, a biasing layer having bias magnetization and a biasing antiferromagnetic layer pinning the bias magnetization in a bias direction when MRAM cell is at temperature equal or below a bias threshold temperature. The bias magnetization is arranged for inducing a bias field adapted for biasing the sense magnetization in a direction opposed to the bias direction, such that the biased sense magnetization varies linearly in the presence of the external magnetic field, when the external magnetic field is oriented in a direction substantially perpendicular to the one of the reference magnetization. The present disclosure further concerns a magnetic field sensor including a plurality of the self-referenced MRAM cell and a method for programming the magnetic field sensor.

Abstract: The present disclosure concerns a magnetic random access memory (MRAM) cell suitable for performing a thermally assisted write operation or a spin torque transfer (STT) based write operation, comprising a magnetic tunnel junction comprising a top electrode; a tunnel barrier layer comprised between a first ferromagnetic layer having a first magnetization direction, and a second ferromagnetic layer having a second magnetization direction adjustable with respect to the first magnetization direction; a front-end layer; and a magnetic or metallic layer on which the second ferromagnetic layer is deposited; the second ferromagnetic layer being comprised between the front-end layer and the tunnel barrier layer and having a thickness comprised between about 0.5 nm and about 2 nm, such that magnetic tunnel junction has a magnetoresistance larger than about 100%. The MRAM cell disclosed herein has lower power consumption compared to conventional MRAM cells.

Abstract: A method for writing a MRAM device, including magnetic tunnel junction with a storage layer, a sense layer, and a spacer layer between the storage and sense layers. At least one of the storage and sense layers has a magnetic anisotropy axis. The method includes an initialization step including: applying an initial heating current pulse for heating the magnetic tunnel junction to a temperature above a threshold temperature at which a storage magnetization is freely orientable, providing an initial resultant magnetic field for adjusting the storage magnetization in an initial direction oriented along the magnetic anisotropy axis. The method allows performing the writing step with improved reproducibly.

Abstract: A circuit has a magnetic device to produce a pre-distorted signal from a sinusoidal input signal. The magnetic device has physical attributes selected to produce characteristics of the pre-distorted signal. A power amplifier is coupled to the magnetic device. The power amplifier processes the pre-distorted signal to produce an output signal with reduced nonlinear behavior associated with the power amplifier.

Abstract: A magnetic logic unit (MLU) cell for sensing magnetic fields, including: a magnetic tunnel junction including a storage layer having a storage magnetization, a sense layer having a sense magnetization; a tunnel barrier layer between the storage layer and the sense layer; and a pinning layer pinning the storage magnetization at a low threshold temperature and freeing it at a high threshold temperature. The sense magnetization is freely alignable at the low and high threshold temperatures and the storage layer induces an exchange bias field magnetically coupling the sense layer such that the sense magnetization tends to be aligned antiparallel or parallel to the storage magnetization. The tunnel barrier layer is configured for generating an indirect exchange coupling between the tunnel barrier layer and the sense layer providing an additional exchange bias field.

Abstract: A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.

Abstract: A device has a flexible substrate supporting an array of magnetic sensors exposed to a uniform external magnetic field. One or more controllers receive magnetic sensor signals from the magnetic sensors. The one or more controllers collect reference magnetic sensor signals when the flexible substrate is aligned with the uniform external magnetic field. The one or more controllers collect first polarity magnetic sensor signals in response to deformation of the flexible substrate in a first direction. The one or more controllers collect second polarity magnetic sensor signals in response to deformation of the flexible substrate in a second direction. The magnetic sensor signals establish a profile of the orientation of the flexible substrate with respect to the uniform external magnetic field.

Abstract: A self-referenced MRAM cell comprises a first portion of a magnetic tunnel junction including a storage layer; a second portion of the magnetic tunnel junction portion including a tunnel barrier layer, a sense layer and a seed layer; the seed layer comprising a material having high spin-orbit coupling such that passing a sense current along the plane of the sense layer and/or seed layer exerts a spin-orbit torque adapted for switching a sense magnetization of the sense layer. A memory device comprising a plurality of the MRAM cells and a method for operating the memory device are also disclosed.

Abstract: A multi-bit magnetic random access memory (MRAM) cell including a magnetic tunnel junction including: a first magnetic storage layer, a second magnetic storage layer, a magnetic sense layer, a first spacer layer between the first magnetic storage layer and the magnetic sense layer, and a second spacer layer between the second magnetic storage layer and the sense layer. The first and second storage magnetization are switchable between m directions to store data corresponding to one of m2 logic states, with m>2. The present disclosure further concerns a method for writing and reading to the MRAM cell and to memory devices including multi-bit MRAM cells.