Abstract: Methods for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography include inputting a desired pattern to be formed on a substrate; determining an initial mask pattern from the desired pattern for the substrate; optimizing the initial mask pattern for wafer quality using a VSB exposure system; and outputting the optimized mask pattern. Methods for fracturing a pattern to be exposed on a surface using VSB lithography include inputting an initial pattern; overlaying the initial pattern with a two-dimensional grid, wherein an initial set of VSB shots are formed by the union of the initial pattern with locations on the grid; merging two or more adjacent shots in the initial set of VSB shots to create a larger shot in a modified set of VSB shots; and outputting the modified set of VSB shots.

Abstract: Methods for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography include inputting a desired pattern to be formed on a substrate; determining an initial mask pattern from the desired pattern for the substrate; optimizing the initial mask pattern for wafer quality using a VSB exposure system; and outputting the optimized mask pattern. Methods for fracturing a pattern to be exposed on a surface using VSB lithography include inputting an initial pattern; overlaying the initial pattern with a two-dimensional grid, wherein an initial set of VSB shots are formed by the union of the initial pattern with locations on the grid; merging two or more adjacent shots in the initial set of VSB shots to create a larger shot in a modified set of VSB shots; and outputting the modified set of VSB shots.

Abstract: Methods for iteratively optimizing a two-dimensioned tiled area such as a lithographic mask include determining a halo area around each tile in the tiled area. An extended tile is made of a tile and a halo area. Each extended tile in the tiled area is iterated until a criterion is satisfied or a maximum number of iterations is met. Optimizing the extended tile produces a pattern for the tile such that at a perimeter of the tile, the pattern matches adjacent patterns that are calculated at perimeters of adjacent tiles.

Abstract: Methods for calculating a pattern to be manufactured on a substrate include inputting a physical design pattern, determining a plurality of possible neighborhoods for the physical design pattern, generating a plurality of possible mask designs for the physical design pattern, calculating a plurality of possible patterns on the substrate, calculating a variation band from the plurality of possible patterns, and modifying the physical design pattern to reduce the variation band. Embodiments also include inputting a set of parameters for a neural network to calculate a pattern to be manufactured on a substrate, calculating a plurality of patterns to be manufactured on the substrate for the physical design in each possible neighborhood of the plurality of possible neighborhoods, training the neural network with the calculated plurality of patterns, and adjusting the set of parameters to reduce the manufacturing variation for the calculated plurality of patterns to be manufactured on a substrate.

Abstract: Methods for iteratively optimizing a two-dimensioned tiled area such as a lithographic mask include determining a halo area around each tile in the tiled area. An extended tile is made of a tile and a halo area. Each extended tile in the tiled area is iterated until a criterion is satisfied or a maximum number of iterations is met. Optimizing the extended tile produces a pattern for the tile such that at a perimeter of the tile, the pattern matches adjacent patterns that are calculated at perimeters of adjacent tiles.

Abstract: Methods for matching features in patterns for electronic designs include inputting a set of pattern data for semiconductor or flat panel displays, where the set of pattern data comprises a plurality of features. Each feature in the plurality of features is classified, where the classifying is based on a geometrical context defined by shapes in a region. The classifying uses machine learning techniques.

Abstract: Methods for fracturing or mask data preparation are disclosed in which a set of single-beam charged particle beam shots is input; a calculated image is calculated using a neural network, from the set of single-beam charged particle beam shots; and a set of multi-beam shots is generated based on the calculated image, to convert the set of single-beam charged particle beam shots to the set of multi-beam shots which will produce a surface image on the surface. Methods for training a neural network include inputting a set of single-beam charged particle beam shots; calculating a set of calculated images using the set of single-beam charged particle beam shots; and training the neural network with the set of calculated images.

Abstract: Methods for exposing a desired shape in an area on a surface using a charged particle beam system include determining a local pattern density for the area of the desired shape based on an original set of exposure information. A backscatter for a sub area is calculated, based on the original set of exposure information. Dosage for at least one pixel in a plurality of pixels in the sub area is increased, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area. A pre-PEC maximum dose is determined for the local pattern density, based on a pre-determined target post-PEC maximum dose. The original set of exposure information is modified with the pre-PEC maximum dose and the increased dosage of the at least one pixel in the sub area to create a modified set of exposure information.

Abstract: Methods include inputting an array of pixels, where each pixel in the array of pixels has a pixel dose. The array of pixels represents dosage on a surface to be exposed with a plurality of patterns, each pattern of the plurality of patterns having an edge. A target bias is input. An edge of a pattern in the plurality of patterns is identified. For each pixel which is in a neighborhood of the identified edge, a calculated pixel dose is calculated such that the identified edge is relocated by the target bias. The array of pixels with the calculated pixel doses is output. Systems for performing the methods are also disclosed.

Abstract: A method for exposing a pattern in an area on a surface using a charged particle beam system is disclosed and includes determining a local pattern density for the area of the pattern based on an original set of exposure information. A pre-PEC maximum dose is determined for the area. The original set of exposure information is modified with the pre-PLC maximum dose.

Abstract: A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. The area comprises a plurality of pixels, and the original set of exposure information comprises dosages for the plurality of pixels in the area. A backscatter is calculated for a sub area of the area based on the original set of exposure information. A dosage for at least one pixel in a plurality of pixels in the sub area is increased, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area. A modified set of exposure information is output, including the increased dosage of the at least one pixel in the sub area.

Abstract: Methods for iteratively optimizing a two-dimensioned tiled area such as a lithographic mask include determining a halo area around each tile in the tiled area. An extended tile is made of a tile and a halo area. Each extended tile in the tiled area is iterated until a criterion is satisfied or a maximum number of iterations is met. Optimizing the extended tile produces a pattern for the tile such that at a perimeter of the tile, the pattern matches adjacent patterns that are calculated at perimeters of adjacent tiles.

Abstract: A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. A backscatter is calculated for the area of the pattern based on the exposure information. An artificial background dose is determined for the area. The artificial background dose comprises additional exposure information and is combined with the original set of exposure information creating a modified set of exposure information. A system for exposing a pattern in an area on a surface using a charged particle beam lithography is also disclosed.

Abstract: Methods for reticle enhancement technology (RET) include inputting a target wafer pattern, where the target wafer pattern spans an entire design area. The entire design area is divided into a plurality of tiles, each tile having a halo region surrounding the tile. A proposed mask for the entire design area is iterated until the proposed mask meets criteria towards producing the target wafer pattern. Each iteration includes calculating a predicted wafer pattern for a subset of the plurality of tiles; and updating the proposed mask for that tile; where all tiles in the subset are calculated before the next iteration.

Abstract: A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. A backscatter is calculated for the area of the pattern based on the exposure information. An artificial background dose is determined for the area. The artificial background dose comprises additional exposure information and is combined with the original set of exposure information creating a modified set of exposure information. A system for exposing a pattern in an area on a surface using a charged particle beam lithography is also disclosed.

Abstract: A method for exposing a pattern in an area on a surface using a charged particle beam system is disclosed and includes determining a local pattern density for the area of the pattern based on an original set of exposure information. A pre-PEC maximum dose is determined for the area. The original set of exposure information is modified with the pre-PLC maximum dose.

Abstract: Methods include inputting an array of pixels, where each pixel in the array of pixels has a pixel dose. The array of pixels represents dosage on a surface to be exposed with a plurality of patterns, each pattern of the plurality of patterns having an edge. A target bias is input. An edge of a pattern in the plurality of patterns is identified. For each pixel which is in a neighborhood of the identified edge, a calculated pixel dose is calculated such that the identified edge is relocated by the target bias. The array of pixels with the calculated pixel doses is output. Systems for performing the methods are also disclosed.

Abstract: Methods for reticle enhancement technology (RET) include inputting a target wafer pattern, where the target wafer pattern spans an entire design area. The entire design area is divided into a plurality of tiles, each tile having a halo region surrounding the tile. A proposed mask for the entire design area is iterated until the proposed mask meets criteria towards producing the target wafer pattern. Each iteration includes calculating a predicted wafer pattern for a subset of the plurality of tiles; and updating the proposed mask for that tile; where all tiles in the subset are calculated before the next iteration.

Abstract: Methods for matching features in patterns for electronic designs include inputting a set of pattern data for semiconductor or flat panel displays, where the set of pattern data comprises a plurality of features. Each feature in the plurality of features is classified, where the classifying is based on a geometrical context defined by shapes in a region. The classifying uses machine learning techniques.

Abstract: A method for exposing a pattern in an area on a surface using a charged particle beam system is disclosed and includes inputting an original set of exposure information for the area and inputting a target post-proximity effect correction (PEC) maximum dose. A local pattern density is calculated for the area of the pattern based on the original set of exposure information. A pre-PEC maximum dose is determined for the area. The original set of exposure information is modified with the pre-PEC maximum dose.