Abstract: A first flash heating is performed in which a lower flash lamp irradiates a back surface of a semiconductor wafer with flashes of light, so that heat conduction from the back surface to a surface of the semiconductor wafer raises the temperature of the surface from the room temperature to an intermediate temperature. Then, a second flash heating is performed in which an upper flash lamp irradiates the surface of the semiconductor wafer with flashes of light, to raise the temperature of the surface of the semiconductor wafer from the intermediate temperature to a target temperature. Since only the irradiation with flashes of light emitted from the lower flash lamp and the upper flash lamp is used to cause the semiconductor wafer having the room temperature to reach the target temperature, all heat treatments can be completed in an extremely short time of one second or less.

Abstract: A substrate processing apparatus and a substrate processing method are capable of restraining or preventing the generation of streaky particles on a substrate surface by excellent removal of a rinsing liquid therefrom. The substrate processing apparatus has a substrate inclining mechanism for inclining a substrate held by a substrate holding mechanism. After a rinsing liquid has been supplied onto a substrate to form a liquid mass, the substrate is inclined at a small angle by the substrate inclining mechanism. Then, the liquid mass is downwardly moved without being fragmented and then falls down without leaving minute droplets on the substrate top. Thereafter, the substrate is returned to a horizontal posture and then dried.

Abstract: A substrate treatment apparatus is provided, which includes: a seal chamber including a chamber body having an opening, a lid member provided rotatably with respect to the chamber body and configured to close the opening, and a first liquid seal structure which liquid-seals between the lid member and the chamber body, the seal chamber having an internal space sealed from outside; a lid member rotating unit which rotates the lid member; a substrate holding/rotating unit which holds and rotates a substrate in the internal space of the seal chamber; and a treatment liquid supplying unit which supplies a treatment liquid to the substrate rotated by the substrate holding/rotating unit.

Abstract: A substrate processing apparatus includes: a plurality of substrate processing sections arranged alongside a transport passage; a standby mechanism which retains a substrate in standby, the standby mechanism being movable along the transport passage; a transport mechanism which transports the substrate between the standby mechanism and each of the substrate processing sections, the transport mechanism being movable along the transport passage; a first movement mechanism which moves the transport mechanism along the transport passage; and a second movement mechanism which moves the standby mechanism along the transport passage.

Abstract: In a substrate processing apparatus consisting of an indexer block and a processing block, a substrate is transported between the indexer block and the processing block by an indexer robot. The indexer robot includes two hands that are provided one above the other on a rotating stage. The other hand moves in a vertical direction to one hand. A difference in height between the one hand and the other hand can be adjusted so as to be equal to spacing between substrate storing grooves of a carrier where the substrate that is to be carried into the indexer block is stored. In addition, the difference in height between the one hand and the other hand can be adjusted so as to be equal to spacing between support plates of a substrate platform provided between the indexer block and the processing block.

Abstract: In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more.

Abstract: A substrate processing apparatus is composed of an indexer block, a first processing block and a second processing block that are provided in parallel with one another. The indexer block is provided with an indexer robot. The first processing block is provided with a plurality of back surface cleaning units and a first main robot. The second processing block is provided with a plurality of end surface cleaning units, a plurality of top surface cleaning units and a second main robot.

Abstract: An appearance inspection apparatus comprises an inspection part for detecting a defect of a pattern on the basis of an image of a surface of a substrate on which the pattern is formed, which is captured by an imaging part. The inspection part comprises an image transfer part for transferring image data which is obtained by imaging a region to be inspected on the substrate and stored in an image storing memory by the imaging part to a plurality of image processing memories and a plurality of GPUs for taking image data corresponding to respective regions to be processed out of transferred image data which are transferred to the image processing memories by the image transfer part and performing an inspection process for defect detection on the image data.

Abstract: Preparation process of an all-solid battery, comprising forming a linear active material part by relatively moving a first nozzle which discharges active material linearly with respect to a current collector to form a plurality of linear active material parts on the current collector, forming a first electrolyte layer by relatively moving a second nozzle which discharges first electrolyte material with respect to the current collector to apply first electrolyte material to each of the plurality of linear active material parts to form linear electrolyte parts thereon to thereby prepare linear active material-electrolyte parts, photo-curing by irradiating light to the linear electrolyte parts to cure them, and forming a second electrolyte layer by applying second electrolyte material to the whole of the linear active material-electrolyte parts and spaces on the current collector between the linear active material-electrolyte parts to prepare the second electrolyte layer.

Abstract: A solvent vapor containing a solvent material capable of dissolving hydrogen fluoride is supplied to a surface of a substrate, thereby covering the surface of the substrate with a liquid film containing solvent material. Thereafter an etching vapor containing a hydrogen fluoride is supplied to the surface of the substrate covered by the liquid film containing the solvent material, thereby etching the surface of the substrate.

Abstract: In a substrate processing apparatus, a liquid film of a supercooled liquid of pure water is formed on the upper surface of a substrate and then cooled with cooling gas into a frozen film. The temperature of the liquid film is lower than the freezing point of pure water, and thus the liquid film is in an easy-to-freeze state. Thus, the time required to freeze the liquid film can be shortened. Even if the temperature of the cooling gas is increased, the liquid film can be speedily frozen as compared with the case in which a liquid film is formed of pure water having a temperature higher than its freezing point. Thus, heat insulating facilities such as piping that supply cooling gas can be simplified. This results in a reduction of the cooling cost required to freeze the liquid film.

Abstract: A substrate processing apparatus (1) includes a bath body (11), cover members (12), processing liquid nozzles (31) for ejecting an SPM liquid like a shower, and gas nozzles (32) for ejecting nitrogen gas. The processing liquid nozzles eject a processing liquid (91) onto substrates (9) from sidewalls (111) of the bath body (11). By ejecting gas toward lower surfaces of the cover members from the gas nozzles before the substrates are loaded into the bath body, it is possible to remove droplets of the processing liquid deposited on the lower surfaces of the cover members during the previous processing of the substrates or during a temperature control where the processing liquid is ejected from the processing liquid nozzles. It is thereby possible to prevent or reduce deposition of droplets of the processing liquid dropped onto the substrates immediately after being loaded into the bath body.

Abstract: A preprocess step for supplying an inert gas into an enclosed space in which a substrate is disposed, while exhausting gas by sucking out of the enclosed space. And then, an etching step for supplying a process vapor into the enclosed space while exhausting gas out of the enclosed space at an rate lower than a rate in the preprocess step. And then a post-process step for supplying an inert gas into the enclosed space while exhausting gas by sucking out of the enclosed space at a rate higher than the rate in the etching step.

Abstract: An anodizing apparatus for causing an anodizing reaction to substrates immersed in an electrolyte solution. The apparatus includes a storage tank for storing the electrolyte solution, a holder for holding a plurality of substrates in liquid-tight contact with circumferential surfaces of the substrates, a moving mechanism for moving the holder between a transfer position outside the storage tank and a treating position inside the storage tank, and a closing device disposed in the storage tank for cooperating with the holder to complete a liquid-tight closure of the circumferential surfaces of the substrates held by the holder. Chemical reaction treatment is carried out with the circumferential surfaces of the substrates placed in a liquid-tight state. After the chemical reaction treatment is completed, the closing device is made inoperative and the holder is moved away from the treating position to unload the substrates from the storage tank.

Abstract: A light-emission output of a flash lamp for performing a light-irradiation heat treatment on a substrate in which impurities are implanted is increased up to a target value L1 over a period of time from 1 to 100 milliseconds, is kept for 5 to 100 milliseconds within a fluctuation range of plus or minus 30% from the target value L1, and is then attenuated from the target value L1 to zero over a period of time from 1 to 100 milliseconds. That is, compared with conventional flash lamp annealing, the light-emission output of the flash lamp is increased more gradually, is kept to be constant for a certain period of time, and is then decreased more gradually. As a result, a total heat amount of a surface of the substrate increases compared with the conventional case, but a surface temperature thereof rises more gradually and then drops more gradually compared with the conventional case.

Abstract: A discharge liquid agitating mechanism, and an inkjet recording apparatus having the discharge liquid agitating mechanism, are provided which are simple in construction, and are yet capable of preventing sedimentation of particles and the like contained in a discharge liquid.

Abstract: A capacitor, a coil, a flash lamp, and a switching element such as an IGBT are connected in series. A controller outputs a pulse signal to the gate of the switching element. A waveform setter sets the waveform of the pulse signal, based on the contents of input from an input unit. With electrical charge accumulated in the capacitor, a pulse signal is output to the gate of the switching element so that the flash lamp emits light intermittently. A change in the waveform of the pulse signal applied to the switching element will change the waveform of current flowing through the flash lamp and, accordingly, the form of light emission, thereby resulting in a change in the temperature profile for a semiconductor wafer.

Abstract: There is provided an electroless plating apparatus which, despite using a high-productivity batch processing method, can reduce the amount of a liquid chemical brought out of a processing tank, thereby reducing the cleaning time in a cleaning step, and can perform flushing easily and quickly. The electroless plating apparatus includes a pre-plating treatment module including a pre-plating treatment tank, a plating module, and an inter-module substrate transport device. The pre-plating treatment tank is provided with a pre-plating treatment solution circulation line having a temperature control function for a pre-plating treatment solution. The plating tank is provided with a plating solution circulation line having a filter and a temperature control function for a plating solution. The plating solution circulation line is connected to a flushing line for flushing the interior of the plating solution circulation line and the interior of the plating tank.

Abstract: In an assembling apparatus according to the present invention, a control portion controls an operation of a working portion such that a first reference position, which corresponds to a first reference point of an assembling component defined in three-dimensional model data of the assembling component, and a second reference position, which corresponds to a second reference point of the assembling component defined in three-dimensional model data of an assembled component, are associated with each other. Therefore, it is possible to carry out an assembling operation properly and efficiently irrespective of a positional shift of the assembled component.

Abstract: A light from a laser light source (11) is collected at a position of a slit (125a) in a vertical direction by a first optical system (12a) to form an intermediate image which is long in a horizontal direction corresponding to an arrangement direction of light modulator elements. An undesired light such as side lobes which appear on the both sides of the intermediate image in the vertical direction is blocked by a slit (125a) and the intermediate image is reformed by a second optical system (12b), to direct a liner illumination light onto the spatial light modulator (13). Thus, in a state where moving ribbons are sagged and first order diffracted lights are emitted in a light modulator element, it is possible to prevent a zeroth order light from being emitted from both end portions of ribbons, to thereby enhance contrast of the signal light.