Abstract: A sensor device comprises a sensor element for measuring a stimulus and generating a corresponding signal, an ADC for convert the signal to a multi-bit digital signal, a memory unit for storing the digital signal, and a timing unit for switching off the sensor element when the ADC is converting the signal and for switching off the ADC after the digital signal is stored in the memory.

Abstract: A method for forming a rectifier device is provided. The method forms a first layer on a substrate, a second layer is formed on the first layer and a photoresist layer is deposited on the second layer in which a plurality of trench patterns are formed. A plurality of trenches are formed in the first layer and the second layer by etching based on the trench patterns in the photoresist. The method then laterally etches the second layer to expose a corner portion of the first layer at mesas formed in between the two trenches. A portion of the second layer is preserved at an edge of the rectifier device.

Abstract: TSV devices with p-n junctions that are planar have superior performance in breakdown and current handling. Junction diode assembly formed in enclosed trenches occupies less chip area compared with junction-isolation diode assembly in the known art. Diode assembly fabricated with trenches formed after the junction formation reduces fabrication cost and masking steps increase process flexibility and enable asymmetrical TSV and uni-directional TSV functions.

Abstract: TSV devices with p-n junctions that are planar have superior performance in breakdown and current handling. Junction diode assembly formed in enclosed trenches occupies less chip area compared with junction-isolation diode assembly in the known art. Diode assembly fabricated with trenches formed after the junction formation reduces fabrication cost and masking steps increase process flexibility and enable asymmetrical TSV and uni-directional TSV functions.

Abstract: During fabrication of a semiconductor device, a width of semiconductor mesas between isolation trenches in the semiconductor device is varied in different regions. In particular, the width of the mesas is smaller in a termination region of the semiconductor device than in a cell or active region. When an oxide layer is subsequently grown, the semiconductor mesas between the trenches in the termination region are at least partially consumed so that the semiconductor mesas in the cell region and the termination region have different heights. Therefore, a contact photomask is not needed to isolate the semiconductor mesas in the termination region. Furthermore, after a planarization operation (such as chemical mechanical polishing), the semiconductor device may have a planar top surface than if contact holes are created. This may allow the metal layer deposited on top of the cell region and the termination region to be flat.

Abstract: Some embodiments provide a system that generates a coil switching signal for a brushless DC motor. During operation, the system determines a magnetic field of the brushless DC motor at a first time and a magnetic field of the brushless DC motor at a second time. Then, the coil switching signal is generated based on a relationship between the magnetic field determined at the first time and a first predetermined threshold, and the magnetic field determined at the second time and a second predetermined threshold.

Abstract: TSV devices with p-n junctions that are planar have superior performance in breakdown and current handling. Junction diode assembly formed in enclosed trenches occupies less chip area compared with junction-isolation diode assembly in the known art. Diode assembly fabricated with trenches formed after the junction formation reduces fabrication cost and masking steps increase process flexibility and enable asymmetrical TSV and uni-directional TSV functions.

Abstract: In one embodiment, the present invention includes a charge pump circuit. The charge pump circuit comprises a plurality of terminals, a plurality of switches for selectively coupling the plurality of terminals, and a control circuit. A first input terminal receives a first reference voltage and a second input terminal receives a second reference voltage. First, second, third, and fourth flying capacitor terminals and the first and second input terminals are selectively coupled together in different configurations. The control circuit selects the switches to actuate according to a cycling of at least three phases of configuration. The cycling shifts the first and second reference voltages to provide dual power supply rails.

Abstract: Some embodiments of the present disclosure provide the design and manufacture of an ultra-small chip assembly. The ultra-small chip assembly comprises a die, a plate-like back electrode disposed on the back-side of the die, and one or more plate-like positive electrodes disposed on the front-side of the die. The ultra-small chip assembly is configured such that one end of the plate-like back electrode extends beyond a first side of the die, and each of the one or more plate-like positive electrodes includes an end which extends beyond a second side of the die. By attaching both the plate-like back electrode and the plate-like positive electrodes on the surfaces of the die, and directly using the exposed ends of the plate-like electrodes as the lead-out electrodes for the chip assembly, the electrical connections outside of the die only occupy a very small volume.

Abstract: In one embodiment, a method includes forming a base region for a transistor using a base mask and forming a contact region to the base region. The contact region is formed in an area that is at least partially outside of the base mask. The method then forms an emitter region in a diffused base region. The base region diffuses outwardly to be formed under the contact region.

Abstract: In one embodiment the present invention includes a DC to DC converter device which includes an electronic circuit. The electronic circuit comprises a first comparator, a second comparator, a first switch, a first latch, and a current sensor. The inductor current includes a peak current value and a valley current value. The first comparator detects the peak current value and resets the first latch which opens the first switch. The second comparator detects the valley current value and sets the first latch which closes the first switch. The current sensor is coupled to sense an inductor current flowing through an output load, and is coupled to provide a sense voltage to the first and second comparators. In this manner, the electronic circuit provides DC to DC conversion with current control.

Abstract: A low noise amplifier (LNA) comprises: a plurality of FETs (F1, F2, F3, F4) arranged to process signals received by the amplifier; a power input (10) arranged to receive electrical power to operate the LNA; and a monolithic support integrated circuit (IC). The monolithic support IC comprises: a FET control circuit (2) arranged to monitor and control the drain current of each FET; a FET selection circuit (3, 24, 22) arranged to detect the level of a DC component of a voltage signal supplied to the power input and to provide a FET selection signal to the FET control circuit (2) according to the detected DC level.

Abstract: Some embodiments of the present disclosure provide the design and manufacture of an ultra-small chip assembly. The ultra-small chip assembly comprises a die, a plate-like back electrode disposed on the back-side of the die, and one or more plate-like positive electrodes disposed on the front-side of the die. The ultra-small chip assembly is configured such that one end of the plate-like back electrode extends beyond a first side of the die, and each of the one or more plate-like positive electrodes includes an end which extends beyond a second side of the die. By attaching both the plate-like back electrode and the plate-like positive electrodes on the surfaces of the die, and directly using the exposed ends of the plate-like electrodes as the lead-out electrodes for the chip assembly, the electrical connections outside of the die only occupy a very small volume.

Abstract: A voltage regulator that modulates the switching of a switching circuit to regulate the output voltage level supplied to a system. The regulator uses a comparator circuit to compare a reference signal to an analog signal derived from the output voltage of the regulator, and outputs a binary signal based on the comparison. The regulator may use a counter circuit that interrogates the binary signal from the comparator circuit and generates a counter signal proportional to, for example, the duration of the binary signal when it stays in one of the two binary states. The regulator then uses a trigger circuit that generates a signal based on the counter signal to effectuate the modulation of the switching of the switching circuit. The reference signal may be modified by a hysteresis level adjuster to force a triggering event at the switching circuit.

Abstract: In one embodiment the present invention includes a switching circuit. The circuit comprises a first transistor, a second transistor, and a boost circuit. The first transistor couples a first power source to a first intermediate node during a first phase of operation and the second transistor couples a second intermediate node to the first intermediate node during a second phase of operation. The boost circuit is coupled to the second intermediate node and provides a second power source by a transferring of energy from the first power source. The transferring of energy includes an inductor receiving energy from the first power source during the first phase of operation and providing a portion of said energy to the boost circuit during the second phase of operation. The boost circuit provides a biasing to enable deactivation of the second transistor during the first phase of operation.

Abstract: In one embodiment the present invention includes a semiconductor device. The semiconductor device comprises a first semiconductor region, a second semiconductor region and a trench region. The first semiconductor region is of a first conductivity type and a first conductivity concentration. The trench region includes a metal layer in contact with the first semiconductor region to form a metal-semiconductor junction. The second semiconductor region is adjacent to the first semiconductor region that has a second conductivity type and a second conductivity concentration. The second semiconductor region forms a PN junction with the first semiconductor region, and the trench region has a depth such that the metal-semiconductor junction is proximate to the PN junction.

Abstract: In one embodiment, the present invention includes a charge pump circuit. The charge pump circuit comprises a plurality of terminals, a plurality of switches for selectively coupling the plurality of terminals, and a control circuit. A first input terminal receives a first reference voltage and a second input terminal receives a second reference voltage. First, second, third, and fourth flying capacitor terminals and the first and second input terminals are selectively coupled together in different configurations. The control circuit selects the switches to actuate according to a cycling of at least three phases of configuration. The cycling shifts the first and second reference voltages to provide dual power supply rails.

Abstract: In one embodiment the present invention includes a semiconductor device. The semiconductor device comprises a first semiconductor region, a second semiconductor region and a trench region. The first semiconductor region is of a first conductivity type and a first conductivity concentration. The trench region includes a metal layer in contact with the first semiconductor region to form a metal-semiconductor junction. The second semiconductor region is adjacent to the first semiconductor region that has a second conductivity type and a second conductivity concentration. The second semiconductor region forms a PN junction with the first semiconductor region, and the trench region has a depth such that the metal-semiconductor junction is proximate to the PN junction.

Abstract: In one embodiment, the present invention includes a charge pump circuit. The charge pump circuit comprises a plurality of terminals, a plurality of switches for selectively coupling the plurality of terminals, and a control circuit. A first input terminal receives a first reference voltage and a second input terminal receives a second reference voltage. First, second, third, and fourth flying capacitor terminals and the first and second input terminals are selectively coupled together in different configurations. The control circuit selects the switches to actuate according to a cycling of at least three phases of configuration. The cycling shifts the first and second reference voltages to provide dual power supply rails.

Abstract: In one embodiment, the present invention includes a semiconductor power device. The semiconductor power device comprises a trenched gate and a trenched field region. The trenched gate is disposed vertically within a trench in a semiconductor substrate. The trenched field region is disposed vertically within the trench and below the trenched gate. A lower portion of the trenched field region tapers to disperse an electric field.