Abstract: The present disclosure provides chemical-mechanical polishing (CMP) particles exhibiting a high polishing rate and a high polishing quality of generating few defects or scratches due to their modified surface thereof. The present disclosure also provides a polishing slurry composition including the polishing particles.

Abstract: A polymer having a repeating unit represented by Formula 1: wherein each of R1, R2, and R3 is independently selected from a substituted or unsubstituted C1-C6 chain-like saturated or unsaturated hydrocarbon group having 0 to 2 first heteroatoms or a substituted or unsubstituted C3-C6 cyclic saturated or unsaturated hydrocarbon group having 0 to 2 first heteroatoms, wherein at least one of R1, R2, and R3 is a hydrocarbon group substituted with a fluorine atom. R4 is a C1-C10 chain-like saturated or unsaturated hydrocarbon group having 0 to 2 second heteroatoms or a C3-C10 cyclic saturated or unsaturated hydrocarbon group having 0 to 2 second heteroatoms. R5 is a C1-C10 chain-like saturated or unsaturated hydrocarbon group having 1 to 6 third heteroatoms or a C3-C10 cyclic saturated or unsaturated hydrocarbon group having 1 to 6 third heteroatoms.

Abstract: A water-repellent coating composition, and particularly, a water-repellent coating composition having improved adhesion and durability by including a phosphoric acid or a phosphoric acid-based compound, is provided.

Abstract: A substrate cleaning composition, a method of cleaning a substrate using the same, and a method of fabricating a semiconductor device using the same, the substrate cleaning composition including a styrene copolymer including a first repeating unit represented by Formula 1-la and a second repeating unit represented by Formula 1-1b; an additive represented by Formula 2-1; and an alcoholic solvent having a solubility of 500 g/L or less in deionized water,

Abstract: A protective film composition includes a polymer having the following formula: each of a, b, and c is a mole fraction; a+b+c=1; 0.05?a/(a+b+c)?0.3; 0.1?b/(a+b+c)?0.6; 0.1?c/(a+b+c)?0.6; each of R1, R2, and R3 is a hydrogen atom or a methyl group; R4 is a hydrogen atom, a butyrolactonyl group, or a substituted or unsubstituted C3 to C30 alicyclic hydrocarbon group; and R5 is a substituted or unsubstituted C6 to C30 linear or cyclic hydrocarbon group. A method of manufacturing a semiconductor package includes forming a sawing protective film on a semiconductor structure by using the protective film composition and sawing the sawing protective film and the semiconductor structure from the sawing protective film.

Abstract: There are provided a chemical mechanical polishing composition, a chemical mechanical polishing slurry and a method for polishing a substrate that can realize a polishing rate equivalent to or higher than that of the existing polishing agent even if total metal content is decreased, or can realize remarkably higher polishing rate than that of the existing polishing agent when using total metal content identical as before. The chemical mechanical polishing composition comprises an iron-based metal catalyst, and a magnesium-based metal catalyst, wherein the metal content of the iron-based metal catalyst is equal to or greater than the metal content of the magnesium-based metal catalyst.

Abstract: Disclosed is a chemical-mechanical polishing slurry composition having a small change in pH over time under an acidic condition and thus being easy to store for a long time. The chemical-mechanical polishing slurry composition includes an abrasive; an amount of about 0.000006 to 0.01 weight % of an aluminum component based on the total weight of the polishing slurry composition; and water. The number of silanol groups on a surface of the abrasive and a content of the aluminum component satisfy the requirements of following Equation 1: 0.0005?(S*C)*100?4.5,??[Equation 1] wherein, S is the number of the silanol groups present on 1 nm2 of the abrasive surface (unit: number/nm2), and C is the content of the aluminum component (weight %) in the slurry composition.

Abstract: This organic electronic device using an adhesive film encapsulation technology includes: a substrate; an electrode layer formed of a transparent conductive material on the top surface of the substrate; an active region layer which is an active layer that induces the flow of holes or electrons in a portion of the electrode layer; a counter electrode formed of a conductive material on the top surface of the electrode layer and the active region layer; an adhesive film attached to cover a region including the active region layer; and a cover material disposed at a certain distance vertically upward and apart from the adhesive film, and sealing the space between counter electrodes by using an encapsulating material along both edges thereof, wherein a gap is formed between the adhesive film and the cover material.

Abstract: A coating composition includes a graphene oxide and a solvent. At least one of a carboxyl group and an epoxide group of the graphene oxide is functionalized by an amine. The amine has an activation energy to an epoxide group of the graphene oxide of about ?3 kcal/mol to about 8 kcal/mol. A method of forming a stacked structure using the coating composition is provided. A method of manufacturing a display device using the coating composition is provided.

Abstract: Provided herein are high performance direct deposit electrodes that do not require the use of a binder, as well as processes of manufacturing the same by an electrospray process.

Abstract: Disclosed is a functionalized graphene containing two or more amines having excellent electrical, thermal and mechanical properties by allowing good interfacial bonding force and uniform dispersion with a thermoplastic polymer, and a method for preparing the functional graphene. The functionalized graphene comprises a carbon material selected from the group consisting of graphene, reduced graphene, graphene oxide, and mixture thereof; and a monovalent amine group and a bivalent or higher amine group which are bonded to the carbon material.

Abstract: A protective film composition includes a polymer having the following formula: each of a, b, and cis amole fraction; a+b+c=1; 0.05?a/(a+b+c)?0.3; 0.1?b/(a+b+c)?0.6; 0.1?c/(a+b+c)?0.6; each of R1, R2, and R3 is a hydrogen atom or a methyl group; R4 is a hydrogen atom, a butyrolactonyl group, or a substituted or unsubstituted C3 to C30 alicyclic hydrocarbon group; and R5 is a substituted or unsubstituted C6 to C30 linear or cyclic hydrocarbon group. A method of manufacturing a semiconductor package includes forming a sawing protective film on a semiconductor structure by using the protective film composition and sawing the sawing protective film and the semiconductor structure from the sawing protective film.

Abstract: A protective film composition includes a polymer having the following formula: each of a, b, and c is a mole fraction; a+b+c=1; 0.05?a/(a+b+c)?0.3; 0.1?b/(a+b+c)?0.6; 0.1?c/(a+b+c)?0.6; each of R1, R2, and R3 is a hydrogen atom or a methyl group; R4 is a hydrogen atom, a butyrolactonyl group, or a substituted or unsubstituted C3 to C30 alicyclic hydrocarbon group; and R5 is a substituted or unsubstituted C6 to C30 linear or cyclic hydrocarbon group. A method of manufacturing a semiconductor package includes forming a sawing protective film on a semiconductor structure by using the protective film composition and sawing the sawing protective film and the semiconductor structure from the sawing protective film.

Abstract: A method of forming a pattern is disclosed. The method includes preparing a composition that includes a solvent and a polymer including a repeating unit in which at least one isocyanurate unit having a first structure is connected to another isocyanurate unit having a second structure different from the first structure; applying the composition on a substrate to form an underlayer; forming a photoresist layer on the underlayer; etching the photoresist layer to form a photoresist pattern; and patterning the substrate using the photoresist pattern.

Abstract: The present invention relates to a liquid crystal compound having a structure as shown by formula I, wherein R is selected from H and alkyl or alkoxy containing 1-12 carbon atoms in which one or more H are unsubstituted or substituted with halogens; A1, A2 and A3 are each independently selected from: a single bond, 1,4-cyclohexylene, 1,4-phenylene, wherein hydrogen in 1,4-phenylene may be each independently substituted with one or more halogens; and Z1 and Z2 are each independently selected from a single bond or —(CH2)2—. The compound of the invention has the characteristics of low rotational viscosity, large dielectric anisotropy, good mutual solubility and stability. The driving voltage of a device can be remarkably reduced after the compound is added to a composition. Thus, the compound of the invention has prosperous applications in LCD industry.

Abstract: The present invention relates to a laminate including a coating layer, which includes an Si—O group-containing material and an intermediate interface layer, and to a method for producing the same, and more specifically, to a laminate which includes an intermediate interface layer, which is a mixture of materials constituting a substrate and materials constituting a coating layer, between the substrate and the coating layer, which includes an Si—O group-containing material, and thus can significantly improve bending capabilities, transparency, and adhesion between the substrate and the coating layer, and further enhances scratch resistance, water repellent properties, anti-fouling properties, fingerprint resistance, thermal stability, gloss properties, and surface hardness by a silsesquioxane coating, and a method for producing the laminate.

Abstract: Provided is a composition for forming an organic anti-reflective coating layer used in a negative tone development, which not only enhance an adhesion to a photoresist while having a high refractive index and a high etch rate but also improve a pattern profile of undercut etc. The composition an isocyanurate compound containing at least one moiety which is represented by Formula 2; a polymer represented by Formula 3 and an organic solvent for dissolving the above-mentioned components.

Abstract: The invention relates to a liquid crystal compound having the structure of formula I wherein R is selected from the group consisting of H and alkyl or alkoxy groups of 1 to 12 carbon atoms in which one or more H are unsubstituted or substituted with halogen; A1 is selected from the group consisting of a single bond or a 1,4-phenylene group in which each H in the 1,4-phenylene group is independently substituted by one or more halogen atoms; L1 and L2 are each independently selected from H or halogen; Z1 is a single bond or —(CH2)2—. The compound has advantages of low rotational viscosity, large dielectric anisotropy, good mutual solubility and stability, which can be added to LC composition to reduce the driving voltage of the display. Thus, the novel compound has prosperous applications in LCD industry.

Abstract: The invention relates to a liquid crystal compound having the structure of formula I wherein R is selected from the group consisting of H and alkyl or alkoxy groups of 1 to 12 carbon atoms in which one or more H are unsubstituted or substituted with halogen; A1 is selected from the group consisting of a single bond or a 1,4-phenylene group in which each H in the 1,4-phenylene group is independently substituted by one or more halogen atoms; L1 and L2 are each independently selected from H or halogen; Z1 is a single bond or —(CH2)2—. The compound has advantages of low rotational viscosity, large dielectric anisotropy, good mutual solubility and stability, which can be added to LC composition to reduce the driving voltage of the display. Thus, the novel compound has prosperous applications in LCD industry.

Abstract: The present invention relates to a method for patterning a metal nanowire-based transparent conductive film through surface treatment and, more particularly, to a method wherein the refractive index is adjusted by adding an optical functional layer prior to a patterning process, the surface of a metal nanowire transparent conductive film is oxidized using a surface treatment agent composition or a salt compound is generated, thereby changing the color and insulating the surface, and a film having excellent visibility is patterned.