Abstract: A protective film composition includes a polymer having the following formula: each of a, b, and c is a mole fraction; a+b+c=1; 0.05?a/(a+b+c)?0.3; 0.1?b/(a+b+c)?0.6; 0.1?c/(a+b+c)?0.6; each of R1, R2, and R3 is a hydrogen atom or a methyl group; R4 is a hydrogen atom, a butyrolactonyl group, or a substituted or unsubstituted C3 to C30 alicyclic hydrocarbon group; and R5 is a substituted or unsubstituted C6 to C30 linear or cyclic hydrocarbon group. A method of manufacturing a semiconductor package includes forming a sawing protective film on a semiconductor structure by using the protective film composition and sawing the sawing protective film and the semiconductor structure from the sawing protective film.

Abstract: The present invention relates to a carbon-metal composite and a method for preparing carbon-metal composite, and more particularly to a method for preparing carbon-metal composite, which: is capable of reducing graphene oxide; which is capable of decreasing the steps and the time for hybridization of graphene which is obtained from the reduction, graphene or carbon nanotube, with metal; which is done under mild condition and; also which is capable of lowering resistivity of the carbon-metal composite. The method for preparing the carbon-metal composite comprises the steps of: reacting a composition containing a carbon compound selected from a group consisting of graphene, graphene oxide and carbon nanotube, a metallic precursor, a reducing agent and a solvent; and removing solvent partially or wholly from the composition reaction-completed.

Abstract: The present invention relates to a coating method for preventing warpage of a substrate, and more specifically, to a coating method for preventing substrate warpage comprising forming two or more coating layers by coating the surface of a substrate with coating compositions having different densities, wherein at least one layer of the two or more coating layers is coated and cured with a coating composition containing a silsesquioxane composite polymer represented by a specific chemical formula, thereby not only preventing substrate warpage but also providing high surface hardness, excellent transparency, scratch resistance, water repellent characteristics, anti-fouling characteristics, anti-fingerprint property, thermal stability and gloss characteristics to the surface of the substrate.

Abstract: A monolithic-type module of a perovskite solar cell includes: a plurality of unit cells including a substrate, a first electrode layer formed on the substrate and having conductivity, a perovskite optical absorption layer formed on the upper surface of the first electrode layer, and made of a porous metal oxide to which an optical absorber having a perovskite structure is attached, and a hole transport layer formed on the upper surface of the perovskite optical absorption layer; and a second electrode layer formed on the hole transport layer and formed of a conductive material, wherein an interconnection partition electrode of a predetermined height is formed between individual unit cells such that the plurality of unit cells are connected in series by interconnection wiring for electrically connecting the second electrode layer of each unit cell with the first electrode layer of a neighboring unit cell by the interconnection partition electrode.

Abstract: Provided herein are high performance direct deposit electrodes that do not require the use of a binder, as well as processes of manufacturing the same by an electrospray process.

Abstract: The present invention relates to a conductive composition, and more particularly, to a conductive copper ink or paste composition for forming fine pattern which comprises a metal precursor and copper powder to increase the density of metal pattern formed during sintering and improve surface roughness, thereby being capable of achieving excellent electrical conductivity, adhesion strength to a substrate, and printability.

Abstract: The present invention relates to a slurry composition for reducing scratches generated when polishing the metal film in a manufacturing process of a semiconductor integrated circuit, by lowering frictional force so that a temperature of the composition which may rise during the polishing is lowered, the thermal stability of the slurry is improved and the size increase of particles in the slurry is suppressed, and a method for reducing scratches using the same. The method comprises the steps of applying a slurry composition for polishing a metal film to a substrate on which the metal film is formed, the slurry composition containing an organic solvent including a nitrogen atom and a glycol-based organic solvent; and making a polishing pad to be contacted to the substrate and moving the polishing pad with respect to the substrate, thereby removing at least part of the metal film from the substrate.

Abstract: The present invention relates to a coating composition comprising a bis-type silane compound, and particularly relates to a coating composition which has high storage stability and can form a highly transparent and high-strength coating film, a preparation method thereof and a coating film formed using the same.

Abstract: The present invention provides a liquid crystal composition having easily adjustable rotational viscosity while maintaining stability at low temperature, a clearing point and dielectric anisotropy (positive value) in an optimal condition according to an exemplary embodiment of the present invention, including: at least one liquid crystal compound selected from the group consisting of liquid crystal compounds represented by the following Chemical Formula 1, as a first component; at least one liquid crystal compound selected from the group consisting of liquid crystal compounds represented by the following Chemical Formula 2, as a second component; and at least one liquid crystal compound selected from the group consisting of liquid crystal compounds represented by the following Chemical Formula 3, as a third component.

Abstract: A liquid crystal display device comprises a first substrate, a second substrate which faces the first substrate, an electrode part which is provided on at least one of the first substrate and the second substrate, and a liquid crystal layer which comprises a liquid crystal composition and is provided between the first substrate and the second substrate. The liquid crystal composition includes a liquid crystal compound of Formula 1. wherein R1, R2, A11, A12, A13, A21, A22, Z11, Z12, Z13, Z21, Z22, a, b, c, d, and e are as described herein.

Abstract: Disclosed are a compound and composition for forming a lower film, which are used in a process for forming a resist pattern by means of the directed self-assembly of a block copolymer (BCP). Also disclosed is a method for forming a lower film using same. The compound for forming a lower film of a resist pattern according to the present invention has the structure of formula 1 of claim 1.

Abstract: The present invention relates to a resin composition for encapsulating an optical device and more particularly, the resin composition for encapsulating optical device of the invention comprising a polyhedral oligomeric silsesquioxane (POSS) of which the compatibility with resins is enhanced by its cross-linking ability and an organic polysilazane compound has excellent mechanical properties, and enhanced adhesive strengths to a base material and barrier properties against moisture or oxygen by having excellent solubility with siloxane resins and significantly improved outgassing phenomenon, thus being able to be applied to encapsulation process for various optical devices, especially the encapsulation process of thick films.

Abstract: The present invention relates to a photo-curable organic-inorganic hybrid composition, more particularly to a photo-curable organic-inorganic hybrid resin composition having superior physical properties such as UV resistance, chemical resistance, light transmittance, adhesive property, insulating property, heat resistance, flatness and water resistance and in particular, having excellent heat resistance and adhesive property enabling the composition to endure a thermal deformation caused by a processing temperature change during post-process after a film is cured. Thus, the composition of the invention is suitable for use as an insulating material and an encapsulating material for a protective film of optical devices including display devices and semiconductors.

Abstract: The present invention relates to a conductive composition for forming a back electrode of a liquid crystal device, and a formation method of a back electrode using the same. The conductive composition enables the supply of a back electrode having excellent coating uniformity, low surface resistance, high transmittance and surface hardness, and particularly excellent reliability of 500 hours.

Abstract: Provided are a composition for forming a resist protection film for lithography and a method for forming a pattern of a semiconductor device using the same. The composition comprises a repeat unit having a fluorine-containing functional group on a side chain thereof and contains a polymer having a weight average molecular weight of 2,000-100,000 and a solvent. The solvent containing 10-100 parts by weight of a material has a Hildebrand solubility parameter of 12.5-22.0, based on 100 parts by weight of the total weight thereof.

Abstract: An under-layer composition of resist having superior thermal stability, etching resistance, gap-filling property and void-preventing property, and a method for forming pattern using the same are disclosed. The under-layer composition of resist comprises: an aromatic ring containing polymer having the repeating unit of the following Formula 1; a compound of the following Formula 4; and an organic solvent. in Formula 1, R1 is a monocyclic or polycyclic aromatic hydrocarbon group having 5 to 20 carbon atoms, R2 and R3 is independently a monocyclic or polycyclic aromatic hydrocarbon group having 4 to 14 carbon atoms, a is an integer of 1 to 3, and b is an integer of 0 to 2. in Formula 4, n is an integer of 1 to 250.

Abstract: An under-layer composition of resist having superior thermal stability, etching resistance, gap-filling property and void-preventing property, and a method for forming pattern using the same are disclosed. The under-layer composition of resist comprises: an aromatic ring containing polymer having the repeating unit of the following Formula 1; a compound of the following Formula 4; and an organic solvent. in Formula 1, R1 is a monocyclic or polycyclic aromatic hydrocarbon group having 5 to 20 carbon atoms, R2 and R3 is independently a monocyclic or polycyclic aromatic hydrocarbon group having 4 to 14 carbon atoms, a is an integer of 1 to 3, and b is an integer of 0 to 2. in Formula 4, n is an integer of 1 to 250.

Abstract: Provided are a composition for forming a resist protection film for lithography and a method for forming a pattern of a semiconductor device using the same. The composition comprises a repeat unit having a fluorine-containing functional group on a side chain thereof and contains a polymer having a weight average molecular weight of 2,000-100,000 and a solvent. The solvent containing 10-100 parts by weight of a material has a Hildebrand solubility parameter of 12.5-22.0, based on 100 parts by weight of the total weight thereof.

Abstract: The present invention relates to a resin composition for encapsulating an optical device and more particularly, the resin composition for encapsulating optical device of the invention comprising a polyhedral oligomeric silsesquioxane (POSS) of which the compatibility with resins is enhanced by its cross-linking ability and an organic polysilazane compound has excellent mechanical properties, and enhanced adhesive strengths to a base material and barrier properties against moisture or oxygen by having excellent solubility with siloxane resins and significantly improved outgassing phenomenon, thus being able to be applied to encapsulation process for various optical devices, especially the encapsulation process of thick films.

Abstract: A phenolic monomer used in the lithographic process for semiconductor fabrication, a polymer for preparing a resist under-layer comprising the same, and a resist under-layer composition comprising the same, are disclosed.