Abstract: A method for making an iron-based oxide magnetic powder includes adding raw material solution containing trivalent iron ions, or trivalent iron ions and ions of a metal element that partially substitutes Fe sites, and an alkaline aqueous solution for neutralizing the raw material solution to a reaction system to adjust the pH of the reaction system to 1.0 or higher and 3.0 or lower. Hydroxycarboxylic acid is added to the obtained reaction solution and thereafter the pH of the reaction system is neutralized to 7.0 or higher and 10.0 or lower. The obtained precipitate of a substituent metal element-containing iron oxyhydroxide is coated with silicon oxide and then heated, whereby an iron-based oxide magnetic powder is obtained with a reduced content of fine and coarse particles, a particle shape close to a perfect sphere, and particles of ?-iron oxide in which Fe sites are partially substituted by other metal elements.

Abstract: There are provided a silver powder, which is able to form an electrically conductive film having a lower resistance value than that of conventional electrically conductive films when the silver powder is used as the material of an electrically conductive paste which is fired to form the electrically conductive film, and a method for producing the same.

Abstract: A lithium-containing oxide precursor solution for coating an electrode active material that includes Li in an amount of 0.1 mass % or more and 5.0 mass % or less, at least one element selected from Nb, F, Fe, P, Ta, V, Ge, B, Al, Ti, Si, W, Zr, Mo, S, Cl, Br, and I in an amount of 0.05 mass % or more and 35 mass % or less, and water in an amount of 60 mass % or more and 98.4 mass % or less. The value of absorbance of the solution at a wavelength of 660 nm is 0.1 or less, and the value of surface energy thereof is 72 mN/m or less.

Abstract: A light-emitting element having high emission output power and light emission efficiency and a method of manufacturing of the same are provided. A light-emitting element according to the present disclosure includes an n-type semiconductor layer; an InAsSbP active layer containing at least In and As on the n-type semiconductor layer; a p-type semiconductor layer that is lattice-matched with the InAsSbP active layer, on the InAsSbP active layer; and a p-type InGaAs window layer that is lattice-mismatched with the p-type semiconductor layer, on the p-type semiconductor layer, wherein the p-type semiconductor layer has a thickness of 20 nm or more and 520 nm or less.

Abstract: Provided are a silver powder having powder physical properties enabling reduction of volume resistivity after firing and a method of producing this silver powder. The silver powder has a tap density of 4.8 g/mL or more, a TAP/D50 value (value determined by dividing the tap density (g/mL) by the volume-based median diameter (?m)) of not less than 7 and not more than 15, and a specific surface area of not less than 0.75 m2/g and not more than 1.3 m2/g.

Abstract: Provided are an ultraviolet light-emitting element with which high light emission output is obtained and a method of producing the same. The ultraviolet light-emitting element includes a transparent substrate having a main surface that constitutes a light extraction surface, an AlN layer on the transparent substrate, an n-type semiconductor layer on the AlN layer, a quantum well-type light-emitting layer on the n-type semiconductor layer, a p-side semiconductor layer directly on the quantum well-type light-emitting layer, and a reflective electrode directly on the p-side semiconductor layer. A side surface of the transparent substrate is a rough surface. Thickness L (nm) of the p-side semiconductor layer satisfies 2L/cos ?=?(2k+1)/2n.

Abstract: A silver powder is provided. A value obtained by dividing, by D50, a difference of subtracting D10 from D90 is 1.0 or less, where D10, D50, and D90 are respectively a size in ?m corresponding to a cumulative frequency of 10%, a size in ?m corresponding to a cumulative frequency of 50%, and a size in ?m corresponding to a cumulative frequency of 90% from a smaller particle size side in a volume-based particle size distribution in laser diffraction particle size distribution measurement. A value of Sa×D50 obtained by multiplying Sa by D50 is 17000 nm2 or more, where Sa is 10 arithmetic mean roughness in nm in surface roughness measurement for a 500 nm×500 nm area of silver particle surfaces.

Abstract: Provided is a production method for an optical semiconductor element with a high yield by preventing wafer damage caused by grinding. A production method for an optical semiconductor element comprises: a step of forming a laminate of compound semiconductor layers on one main surface of a compound semiconductor substrate having cleavability; and a grinding step of grinding the other main surface of the compound semiconductor substrate, wherein a skewness (Ssk) in surface roughness measurement of a ground surface of the compound semiconductor substrate immediately after the grinding step is positive.

Abstract: Provided is a III-V compound semiconductor light-emitting element having good light emission output relative to injected power compared to conventional light-emitting elements. The III-V compound semiconductor light-emitting element includes an n-type cladding layer, a light-emitting layer, and a p-type cladding layer in stated order and includes an undoped electron blocking layer between the light-emitting layer and the p-type cladding layer. The light-emitting layer has a layered structure in which a barrier layer and a well layer are repeatedly stacked. At a conduction band, a band gap of the electron blocking layer is larger than band gaps of the barrier layer and the p-type cladding layer, and the band gap of the p-type cladding layer is larger than the band gap of the barrier layer. At a valence band, a band gap of the electron blocking layer is between band gaps of the barrier layer and the cladding layer.

Abstract: Provided is a method of producing a silver powder and the silver powder that enable preparation of a conductive paste capable of forming a wiring pattern with desired line width and height. A method of producing a silver powder comprises: a disintegration step of disintegrating an agglomerated silver powder in an airflow type mill, and a classification step of classifying a silver powder after the disintegration step, in a pneumatic classifier, wherein the agglomerated silver powder has a moisture content of 2 wt % or more and 20 wt % or less, in the disintegration step, compressed air at a temperature of 80° C. or more and 180° C. or less is supplied to the airflow type mill as supply air, in the classification step, an exhaust of the airflow type mill and the silver powder after the disintegration step are supplied to the pneumatic classifier.

Abstract: Provided is a semiconductor light-emitting element having good light emission characteristics compared to conventional light-emitting elements. The semiconductor light-emitting element includes a light-emitting layer including a laminate in which first and second III-V compound semiconductor layers are stacked repeatedly. Group III element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of Al, Ga, and In. Group V element in the first and second III-V compound semiconductor layers is one type or two or more types selected from the group consisting of As, Sb, and P. A composition wavelength difference between composition wavelengths of the first and second III-V compound semiconductor layers is 70 nm or more. In a band structure of the laminate, conduction band-side well depth (Dc) is larger than valence band-side well depth (Dv), and Dc/(Dc+Dv) is 65% or more.

Abstract: To provide a flaky silver powder having a tapped density of from 0.8 g/mL to 1.9 g/mL, and a cumulative 50th percentile particle diameter (D50) of from 2 ?m to 7 ?m, where the cumulative 50th percentile particle diameter (D50) is measured by laser diffraction or laser scattering particle size analysis.

Abstract: A group III nitride semiconductor light-emitting element comprises, in the following order: an n-type group III nitride semiconductor layer; a group III nitride semiconductor laminated body obtained by alternately laminating a barrier layer and a well layer narrower in bandgap than the barrier layer in the stated order so that the number of barrier layers and the number of well layers are both N, where N is an integer; an AlN guide layer; and a p-type group III nitride semiconductor layer. The AlN guide layer has a thickness of 0.7 nm or more and 1.7 nm or less. A final barrier layer wider in bandgap than the well layer and narrower in bandgap than the AlN guide layer is provided between an Nth well layer in the group III nitride semiconductor laminated body and the AlN guide layer.

Abstract: Provided is a GaAs wafer that can suitably be used to produce LiDAR sensors in particular and a method of producing a GaAs ingot that can be used to obtain such a GaAs wafer. The GaAs wafer has a silicon concentration of 5.0×1017 cm?3 or more and less than 3.5×1018 cm?3, an indium concentration of 3.0×1017 cm?3 or more and less than 3.0×1019 cm?3, and a boron concentration of 1.0×1018 cm?3 or more. The average dislocation density of the GaAs wafer is 1500/cm2 or less.

Abstract: A method of producing a silver powder includes: adding a reductant to a silver ammine complex aqueous solution to obtain a first liquid; adding a surface treatment agent, in an amount of 0.05 to 0.15 wt % relative to weight of silver contained in the silver ammine complex aqueous solution, to the first liquid to obtain a second liquid; obtaining a first silver powder from the second liquid and drying; and stirring the first powder, a lubricant, and media inside of a vessel to obtain a second silver powder. A specific surface area diameter is 1.3 to 2.0 ?m. A diameter at a cumulative value of 50% in a volume-based particle size distribution is 1.5 to 3 times the specific surface area diameter. Additive amounts of the lubricant and the surface treatment agent are, in total, 0.1 to 0.4 wt % relative to weight of silver in the first silver powder.

Abstract: Provided is a semiconductor light-receiving element having high light reception sensitivity and high ESD withstand voltage. The semiconductor light-receiving element (100) includes an n-type InP substrate (110), an n-type InGaAs light-absorbing layer (130), and an InP window layer (140). A p-type impurity diffusion region (150) that reaches an upper part of the n-type InGaAs light-absorbing layer (130) is formed in the InP window layer (140). The n-type InGaAs light-absorbing layer (130) has a thickness of 2.2 ?m or more and a carrier density due to an n-type impurity of 2.5×1015/cm3 or more.

Abstract: Provided is a method of producing a semiconductor optical device that makes it possible to improve the optical device properties of the semiconductor optical device including semiconductor layers containing at least In, As, and Sb. The method has a first step of forming an etching stop layer on an InAs growth substrate; a second step of forming a semiconductor laminate; a third step of forming a distribution portion; a fourth step of bonding the semiconductor laminate and the distribution portion to a support substrate with a metal bonding layer therebetween; and a fifth step of removing the InAs growth substrate.

Abstract: To provide a flaky silver powder having a tapped density of from 0.8 g/mL to 1.9 g/mL, and a cumulative 50th percentile particle diameter (D50) of from 2 ?m to 7 ?m, where the cumulative 50th percentile particle diameter (D50) is measured by laser diffraction or laser scattering particle size analysis.

Abstract: Provided is a spherical silver powder that can bring about excellent fine line printability when used in a conductive paste or the like. The spherical silver powder has a diameter D10 at a volume-based cumulative value of 10%, a diameter D50 at a volume-based cumulative value of 50%, and a diameter D90 at a volume-based cumulative value of 90% according to laser diffraction that satisfy a formula: (D90?D10)/D50<1, and has a ratio D50/DBET of the D50 relative to a BET diameter DBET of not less than 0.90 and not more than 1.20.

Abstract: The present disclosure provides a point source type light-emitting diode and a manufacturing method thereof, which simplify a manufacturing process and have superior temperature-dependent characteristic. A point source type light-emitting diode includes a support substrate, a metal layer having a light reflecting surface, a current narrowing layer, a III-V compound semiconductor laminate sequentially having a p-type semiconductor layer, an active layer, and an n-type semiconductor layer, and a top electrode. The top electrode has an opening for ejecting light emitted by the active layer. The current narrowing layer includes a dielectric layer having a through hole and an intermediate electrode. In a projection plane in which the current narrowing layer including the intermediate electrode is projected vertically onto the top electrode, the opening encloses the intermediate electrode, and the dielectric layer encloses the top electrode. The thickness of the p-type semiconductor layer is between 0.5 ?m and 3.