Patents Assigned to Dowa Electronics Materials Co., Ltd.
  • Patent number: 11228030
    Abstract: There is provided a solution containing lithium and at least one of a niobium complex and a titanium complex, excellent in storage stability, and suitable for forming a coating layer capable of improving battery characteristics of an active material, and a related technique, which is the solution containing lithium, at least one of a niobium complex and a titanium complex, and ammonia, wherein an amount of the ammonia in the solution is 0.2 mass % or less.
    Type: Grant
    Filed: June 28, 2017
    Date of Patent: January 18, 2022
    Assignee: DOWA ELECTRONICS MATERIALS CO., LTD.
    Inventors: Yoshiaki Aiki, Toshihiko Ueyama, Koji Tanoue
  • Patent number: 11227702
    Abstract: This disclosure relates to a fine silver particle dispersion including: (1) 65 to 95.4% by weight of fine silver particles which have an average primary particle diameter of 10 to 190 nm and which comprise 25% by number or less of silver particles having a primary particle diameter of 100 nm or larger, (2) 4.5 to 34.5% by weight of a solvent, and (3) 0.1 to 1.0% by weight of ethyl cellulose having a weight average molecular weight of 10,000 to 120,000.
    Type: Grant
    Filed: April 4, 2019
    Date of Patent: January 18, 2022
    Assignee: DOWA ELECTRONICS MATERIALS CO., LTD.
    Inventors: Shingo Teragawa, Takashi Hinotsu, Dave Hui, Michael Stephen Wolfe, Howard David Glicksman, Haixin Yang
  • Publication number: 20220005636
    Abstract: A soft magnetic powder, including an Fe alloy, and containing 0.1 to 15 mass % of Si, wherein a ratio (Si/Fe) of an atomic concentration of Si and an atomic concentration of Fe is from 4.5 to 30 at a depth of 1 nm from a particle surface of the soft magnetic powder.
    Type: Application
    Filed: October 30, 2019
    Publication date: January 6, 2022
    Applicant: DOWA ELECTRONICS MATERIALS CO., LTD.
    Inventors: Takeshi KAWAUCHI, Kyoso MASUDA, Kenichi INOUE
  • Patent number: 11205739
    Abstract: Provided is a semiconductor light-emitting device which can mitigate a multipeak in an emission spectrum in a bonding-type semiconductor light-emitting device having an InP cladding layer. The semiconductor light-emitting device of the present disclosure includes a first conductive type InP cladding layer, a semiconductor light-emitting layer, and a second conductive type InP cladding layer provided sequentially over a conductive support substrate, the second conductive type InP cladding layer being on a light extraction side, and the semiconductor light-emitting device further includes a metal reflective layer, between the conductive support substrate and the first conductive type InP cladding layer, for reflecting light emitted from the semiconductor light-emitting layer; and a plurality of recesses provided in a surface of the second conductive type InP cladding layer.
    Type: Grant
    Filed: December 15, 2017
    Date of Patent: December 21, 2021
    Assignee: DOWA Electronics Materials Co., Ltd.
    Inventors: Jumpei Yamamoto, Tetsuya Ikuta
  • Publication number: 20210391502
    Abstract: Provided is a III-nitride semiconductor light-emitting device having excellent light output power as compared with conventional devices and a method of producing the same. The III-nitride semiconductor light-emitting device has an emission wavelength of 200 nm to 350 nm and includes an n-type semiconductor layer; a light emitting layer in which N barrier layers 40b and N well layers 40w (where N is an integer) are alternately stacked in this order; an AlN guide layer; an electron blocking layer; and a p-type semiconductor layer in this order. The electron block layer is made of p-type AlzGa1-zN (0.50?z?0.80), and the barrier layers are made of n-type AlbGa1-bN (z+0.01?b?0.95).
    Type: Application
    Filed: October 31, 2019
    Publication date: December 16, 2021
    Applicant: DOWA Electronics Materials Co., Ltd.
    Inventor: Yasuhiro WATANABE
  • Patent number: 11201261
    Abstract: Provided are a deep ultraviolet light emitting element that exhibits both high light output power and an excellent reliability, and a method of manufacturing the same. A deep ultraviolet light emitting element 100 of this disclosure comprises an n-type semiconductor layer 30, a light-emitting layer 40, and a p-type semiconductor layers 60, on a substrate 10, in this order. The light-emitting layer 40 emits deep ultraviolet light. The p-type semiconductor layers 60 comprise a p-type first layer 60A and a p-type contact layer 60B directly on the p-type first layer 60A. The p-type contact layer 60B is made of a non-nitride p-type group III-V or p-type group IV semiconductor material, and functions as a reflective layer to reflect the deep ultraviolet light. The reflectance of light at a wavelength of 280 nm incident on the p-type contact layer 60B from the p-type first layer 60A is 10% or higher.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: December 14, 2021
    Assignee: DOWA Electronics Materials Co., Ltd.
    Inventor: Tomohiko Shibata
  • Patent number: 11180672
    Abstract: There is produced a fine silver particle dispersing solution which contains: fine silver particles (the content of silver in the fine silver particle dispersing solution being 30 to 95% by weight), which have an average primary particle diameter of greater than 100 nm and not greater than 300 nm and which are coated with an amine having a carbon number of 8 to 12, such as octylamine, serving as an organic protective material; a polar solvent (5 to 70% by weight) having a boiling point of 150 to 300° C.; and an acrylic dispersing agent (5% by weight or less with respect to the fine silver particles), such as a dispersing agent of at least one of acrylic acid ester and methacrylic acid ester.
    Type: Grant
    Filed: April 22, 2016
    Date of Patent: November 23, 2021
    Assignee: DOWA ELECTRONICS MATERIALS CO., LTD.
    Inventors: Shingo Teragawa, Takashi Hinotsu, Taro Torigoe, Shinichi Konno
  • Publication number: 20210359159
    Abstract: Provided are a III-nitride semiconductor light-emitting device that can reduce change in the light output power with time and has more excellent light output power, and a method of producing the same. A III-nitride semiconductor light-emitting device 100 has an emission wavelength of 200 nm to 350 nm, and includes an n-type layer 30, a light emitting layer 40, an electron blocking layer 60, and a p-type contact layer 70 in this order. The electron blocking layer 60 has a co-doped region layer 60c, the p-type contact layer 60 is made of p-type AlxGa1-xN (0?x?0.1), and the p-type contact layer 60 has a thickness of 300 nm or more.
    Type: Application
    Filed: September 25, 2019
    Publication date: November 18, 2021
    Applicant: DOWA Electronics Materials Co., Ltd.
    Inventor: Yasuhiro WATANABE
  • Patent number: 11114228
    Abstract: A magnetic compound having a small dielectric loss and an antenna constituted by the magnetic compound and an electronic device incorporating the antenna are provided by a metal magnetic powder which is well dispersed in a resin having small dielectric loss, and a magnetic powder composite including: a metal magnetic powder; and one or more elements selected from carboxylic acid or its anhydride, aromatic carboxylic acid ester, and a derivative thereof, having a property that real part ?? permeability is 1.45 or more, tan ?? is 0.1 or less, tan ?? is 0.05 or less at a measuring frequency of 2 GHz, when a magnetic powder composite is prepared by adding 5 parts by mass of one or more elements selected from the carboxylic acid or its anhydride, the aromatic carboxylic acid ester, and the derivative thereof to 100 parts by mass of the metal magnetic powder.
    Type: Grant
    Filed: June 1, 2016
    Date of Patent: September 7, 2021
    Assignee: DOWA ELECTRONICS MATERIALS CO., LTD.
    Inventors: Toshihiko Ueyama, Masahiro Gotoh, Takayuki Yoshida, Takuyuki Baba
  • Publication number: 20210268583
    Abstract: Provided is a method of producing spherical silver powder, which makes it possible to easily produce spherical silver powder having primary particle diameters with less variation than conventional powder and spherical silver powder obtained by the method. The method of producing spherical silver powder includes a reduction precipitation step of precipitating silver particles by reduction by adding a reductant including hydrazine carbonate to an aqueous reaction system containing silver ions.
    Type: Application
    Filed: July 17, 2019
    Publication date: September 2, 2021
    Applicant: DOWA Electronics Materials Co., Ltd.
    Inventors: Kemmei OTSUBO, Koji HIRATA
  • Patent number: 11103922
    Abstract: A method for producing a Fe—Co alloy powder suitable for an antenna includes steps, wherein when introducing an oxidizing agent into an aqueous solution containing Fe ions and Co ions to generate crystal nuclei and cause precipitation and growth of a precursor having Fe and Co as components, Co in an amount corresponding to 40% or more of the total amount of Co used for the precipitation reaction is added to the aqueous solution at a time after the start of the crystal nuclei generation and before the end of the precipitation reaction to obtain the precursor. Then, a dried product of the precursor is reduced to obtain a Fe—Co alloy powder. This Fe—Co alloy powder has a mean particle size of 100 nm or less, a coercive force Hc of 52.0 to 78.0 kA/m, and a saturation magnetization ss of 160 Am2/kg or higher.
    Type: Grant
    Filed: March 27, 2015
    Date of Patent: August 31, 2021
    Assignee: DOWA ELECTRONICS MATERIALS CO., LTD.
    Inventors: Masahiro Gotoh, Takayuki Yoshida
  • Patent number: 11107952
    Abstract: Provided are a group III nitride semiconductor light emitting element and a method of manufacturing the same. A group III nitride semiconductor light emitting element of the present disclosure comprises in this order, in a substrate, an n-type semiconductor layer, a light emitting layer, a p-type electron blocking layer, a p-type contact layer made of AlxGa1-xN, and a p-side reflection electrode, wherein a center emission wavelength of light emitted from the light emitting layer is 270 nm or greater and 330 nm or smaller, the p-type contact layer is in contact with the p-side reflection electrode, and has a thickness of 20 nm or greater and 80 nm or smaller, and the Al composition ratio x of the p-type contact layer satisfies the following Formula: 2.09?0.006×?p?x?2.25?0.006×?p where ?p is the center emission wavelength in nanometer.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: August 31, 2021
    Assignee: DOWA Electronics Materials Co., Ltd.
    Inventor: Yasuhiro Watanabe
  • Patent number: 11097956
    Abstract: A surface-modified iron-based oxide magnetic particle powder has good solid-liquid separation property in the production process, has good dispersibility in a coating material for forming a coating-type magnetic recording medium, has good orientation property, and has a small elution amount of a water-soluble alkali metal, and to provide a method for producing the surface-modified iron-based oxide magnetic particle powder. The surface-modified iron-based oxide magnetic particle powder can be obtained by neutralizing a solution containing dissolved therein a trivalent iron ion and an ion of the metal, by which the part of Fe sites is to be substituted, with an alkali aqueous solution, so as to provide a precursor, coating a silicon oxide on the precursor, heating the precursor to provide e-type iron-based oxide magnetic powder, and adhering a hydroxide or a hydrous oxide of one kind or two kinds of Al and Y thereto.
    Type: Grant
    Filed: March 11, 2016
    Date of Patent: August 24, 2021
    Assignee: DOWA ELECTRONICS MATERIALS CO., LTD.
    Inventors: Kenji Sakane, Tetsuya Kawahito
  • Patent number: 11087792
    Abstract: There is provided an oriented body containing platinum group-substituted-6 iron oxide particles typified by Rh-substituted ?-iron oxide or Ru-substituted ?-iron oxide applicable to MAMR, MIMR, or F-MIMR system, and a technique related thereto, containing platinum group element-substituted ?-iron oxide particles in which a part of ?-iron oxide is substituted with at least one element of platinum group elements, as magnetic particles wherein the degree of orientation of the magnetic particles defined by the degree of orientation=SQ (direction of magnetization easy-axes)/SQ (direction of magnetization hard-axes) exceeds 5.0, and a coercive force exceeds 31 kOe.
    Type: Grant
    Filed: November 30, 2016
    Date of Patent: August 10, 2021
    Assignees: THE UNIVERSITY OF TOKYO, DOWA ELECTRONICS MATERIALS CO., LTD.
    Inventors: Shin-ichi Ohkoshi, Kenta Imoto, Shizuka Anan, Asuka Namai, Kenji Masada
  • Patent number: 11081253
    Abstract: There is provided an inexpensive silver particle dispersing solution being usable as a slurry for ink jet, a method for producing the same, and a method for producing a conductive film using the silver particle dispersing solution. In a silver particle dispersing solution containing a silver powder and a solvent, the silver powder has an average primary particle diameter (DSEM) of 0.15 to 0.5 ?m, and the ratio (D50/DSEM) of a particle diameter (D50), which corresponds to 50% of accumulation in volume-based cumulative distribution of the silver powder, to the average primary particle diameter (DSEM) is not less than 1.7, the silver powder having a fatty acid adhered to the surface thereof, and the solvent containing a monohydric higher alcohol having a carbon number of 6 to 12, butyl carbitol or butyl carbitol acetate as the main component thereof.
    Type: Grant
    Filed: June 11, 2017
    Date of Patent: August 3, 2021
    Assignee: Dowa Electronics Materials Co., Ltd.
    Inventors: Taku Okano, Noriaki Nogami
  • Patent number: 11056257
    Abstract: An object is to provide a magnetic compound excellent in high frequency properties and excellent in mechanical strength, and its related items, using the polyarylene sulfide resin, and to provide a technique regarding the magnetic compound having a metal magnetic powder and a polyarylene sulfide resin, and satisfying both mechanical strength and high frequency properties.
    Type: Grant
    Filed: June 1, 2016
    Date of Patent: July 6, 2021
    Assignee: DOWA ELECTRONICS MATERIALS CO., LTD.
    Inventors: Takayuki Yoshida, Masahiro Gotoh, Toshihiko Ueyama, Takuyuki Baba, Toru Suzuki, Koji Tanaka
  • Publication number: 20210193874
    Abstract: A group III nitride semiconductor light-emitting element comprises, in the following order: an n-type group III nitride semiconductor layer; a group III nitride semiconductor laminated body obtained by alternately laminating a barrier layer and a well layer narrower in bandgap than the barrier layer in the stated order so that the number of barrier layers and the number of well layers are both N, where N is an integer; an AlN guide layer; and a p-type group III nitride semiconductor layer. The AlN guide layer has a thickness of 0.7 nm or more and 1.7 nm or less. A final barrier layer wider in bandgap than the well layer and narrower in bandgap than the AlN guide layer is provided between an Nth well layer in the group III nitride semiconductor laminated body and the AlN guide layer.
    Type: Application
    Filed: February 16, 2021
    Publication date: June 24, 2021
    Applicant: DOWA Electronics Materials Co., Ltd.
    Inventors: Yasuhiro WATANABE, Takehiko FUJITA
  • Patent number: 11041229
    Abstract: An object of the present invention is to provide metal powder that can be used to form an external electrode, which is excellent in solder wettability and solder leach resistance while having a layer structure with fewer layers than in the related art and, furthermore, is excellent in electrical conductivity. This silver-coated alloy powder comprises a coating layer on a surface of an alloy core particle containing copper, nickel, zinc, and inevitable impurities, the coating layer containing silver.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: June 22, 2021
    Assignee: DOWA ELECTRONICS MATERIALS CO., LTD.
    Inventors: Kyoso Masuda, Kenichi Inoue, Yuki Kaneshiro, Atsushi Ebara, Yoshiyuki Michiaki, Kozo Ogi, Takahiro Yamada, Masahiro Yoshida
  • Publication number: 20210162501
    Abstract: There are provided a spherical silver powder which has the same diameter as that of a spherical silver powder produced by a conventional wet reduction method and which can sufficiently sinter the silver particles thereof to cause the silver particles to be adhered to each other at a relatively low temperature to form a conductive film having a low volume resistivity when it is used for a baked type conductive paste, and a method for producing the same. A spherical silver powder, which contains a neutral or basic amino acid having a carbon number of not less than 5 in each of particles thereof and which has an average particle diameter D50 of 0.2 to 5 ?m based on a laser diffraction method, is produced by adding the neutral or basic amino acid having the carbon number of not less than 5 (such as proline, tyrosine, tryptophan, phenylalanine, arginine or histidine) to a water reaction system containing silver ions to mix a reducing agent therewith to deposit silver particles by reduction.
    Type: Application
    Filed: December 13, 2018
    Publication date: June 3, 2021
    Applicant: Dowa Electronics Materials Co., Ltd
    Inventor: Masaya Osako
  • Publication number: 20210162495
    Abstract: There is provided a spherical silver powder which is capable of being sintered at a lower temperature. The spherical silver powder of spherical silver particles has cavities, each of which is formed in a corresponding one of the spherical silver particles and each of which has a major axis of 100 to 1000 nm and a minor axis of 10 nm or more, the ratio of the major axis to the minor axis (major axis/minor axis) being 5 or more, the major axis being the length of the long side of a rectangle which has a minimum area and which circumscribes the outline of a cross-section of a corresponding one of the cavities on an image of the cross-section of the corresponding one of the silver particles exposed by polishing the surface of a resin after the silver powder is embedded in the resin, and the minor axis being the length of the narrow side of the rectangle.
    Type: Application
    Filed: December 13, 2018
    Publication date: June 3, 2021
    Applicant: Dowa Electronics Materials Co., Ltd.
    Inventors: Masaya Osako, Taro Nakanoya