Abstract: Provided is a light-emitting element lamp capable of increasing a light extraction efficiency and its manufacturing method. The light-emitting element lamp according to the present invention includes: a light-emitting element having a semiconductor layer provided on a substrate; a first lens of spherical segment shape provided by protruding from a surface on the opposite side of the semiconductor layer of the substrate and having a spherical cap that includes a bottom surface consisting of an attaching surface to the surface and a protruding surface from the surface and a radius of curvature R1; and a second lens attached to the side of the light-emitting element and the protruding surface of the first lens, in which the second lens has a concave curve from a peripheral side of the bottom surface of the first lens to the semiconductor layer side on the side of the light-emitting element.

Abstract: Provided is a method of manufacturing a semiconductor optical device, which makes it possible to reduce the thickness of a semiconductor optical device including InGaAsP-based III-V compound semiconductor layers containing at least In and P to a thickness smaller than that of conventional devices, and provide a semiconductor optical device. The method of manufacturing a semiconductor optical device includes a step of forming a semiconductor laminate on the InP growth substrate; a step of bonding the semiconductor laminate to the support substrate formed from a Si substrate, with at least the metal bonding layer therebetween; and a step of removing the InP growth substrate.

Abstract: A silver powder mixture that is suitable for forming a conductive film on a surface of a member having stretchability, a method for producing the same, and a conductive paste using the silver powder mixture is provided. A silver powder mixture containing filamentous silver powder including spherical and filamentous parts and flaky silver powder having an average particle diameter of 1 ?m or more and 50 ?m or less and an aspect ratio, which is defined by a ratio of an average long diameter and an average thickness, of 1.5 or more is obtained by adding one kind or two or more kinds of a salt of copper and aluminum and ethylenediaminetetraacetic acid to a silver nitrate aqueous solution, for 60 seconds or more, and then adding a reducing agent containing one kind or two or more kinds of L-ascorbic acid, erythorbic acid, and salts thereof.

Abstract: There is provided a silver powder which has a small average particle diameter and a small thermal shrinkage percentage, and a method for producing the same. While a molten metal of silver heated to a temperature (1292 to 1692° C.), which is higher than the melting point (962° C.) of silver by 330 to 730° C., is allowed to drop, a high-pressure water is sprayed onto the molten metal of silver (preferably at a water pressure of 90 to 160 MPa) to rapidly cool and solidify the molten metal of silver to powderize silver to produce a silver powder which has an average particle diameter of 1 to 6 ?m and a shrinkage percentage of not greater than 8% (preferably not greater than 7%) at 500° C., the product of the average particle diameter by the shrinkage percentage at 500° C. being 1 to 11 ?m·% (preferably 1.5 to 10.5 ?m·%).

Abstract: There are provided a silver powder, which is able to form an electrically conductive film having a lower resistance value than that of conventional electrically conductive films when the silver powder is used as the material of an electrically conductive paste which is fired to form the electrically conductive film, and a method for producing the same.

Abstract: Provided is a hexagonal ferrite magnetic powder for a magnetic recording medium, containing hexagonal ferrite magnetic particles having aluminum hydroxide adhered on the surface thereof, the hexagonal ferrite magnetic powder having an Al/Fe molar ratio of 0.030 to 0.200, a Co/Fe molar ratio of 0.002 to 0.030, and a Nb/Fe molar ratio of 0.005 to 0.050, and having an Fe site valence AFe of 3.015 to 3.040 as calculated by AFe=(3+2×[Co/Fe]+5×[Nb/Fe])/(1+[Co/Fe]+[Nb/Fe]) wherein [Co/Fe] represents the Co/Fe molar ratio and [Nb/Fe] represents the Nb/Fe molar ratio, and preferably having an activation volume Vact of 1400 to 1800 nm3. This magnetic powder simultaneously achieves an increase in magnetic characteristics including SNR of a magnetic recording medium and a further increase in durability thereof.

Abstract: [Problem] To provide a method for producing iron based oxide magnetic powder that has a narrow particle size distribution and a small content of fine particles that do not contribute to the magnetic recording characteristics, and consequently has a narrow coercive force distribution and is suitable for the enhancement of the recording density of the magnetic recording medium. [Solution] ?-Type iron based oxide magnetic powder is obtained by a wet method, then a tetraalkylammonium salt as a surface modifier is added to a slurry containing the magnetic powder to make a concentration of 0.009 mol/kg or more and 1.0 mol/kg or less, and simultaneously to make pH of 11 or more and 14 or less, and the slurry is subjected to a dispersion treatment and then classified, so as to provide iron based oxide magnetic powder having a narrow particle size distribution and a narrow coercive force distribution.

Abstract: A producing method of a solution that contains lithium, at least one of a niobium complex and a titanium complex, and ammonia, wherein an amount of the ammonia in the solution is 0.3 mass % or less. The solution is suitable for forming a coating layer capable of improving battery characteristics of an active material in a battery.

Abstract: There is provided a spherical silver powder which is capable of being sintered at a lower temperature. The spherical silver powder of spherical silver particles has cavities, each of which is formed in a corresponding one of the spherical silver particles and each of which has a major axis of 100 to 1000 nm and a minor axis of 10 nm or more, the ratio of the major axis to the minor axis (major axis/minor axis) being 5 or more, the major axis being the length of the long side of a rectangle which has a minimum area and which circumscribes the outline of a cross-section of a corresponding one of the cavities on an image of the cross-section of the corresponding one of the silver particles exposed by polishing the surface of a resin after the silver powder is embedded in the resin, and the minor axis being the length of the narrow side of the rectangle.

Abstract: The present disclosure provides a point source type light-emitting diode and a manufacturing method thereof, which simplify a manufacturing process and have superior temperature-dependent characteristic. A point source type light-emitting diode includes a support substrate, a metal layer having a light reflecting surface, a current narrowing layer, a III-V compound semiconductor laminate sequentially having a p-type semiconductor layer, an active layer, and an n-type semiconductor layer, and a top electrode. The top electrode has an opening for ejecting light emitted by the active layer. The current narrowing layer includes a dielectric layer having a through hole and an intermediate electrode. In a projection plane in which the current narrowing layer including the intermediate electrode is projected vertically onto the top electrode, the opening encloses the intermediate electrode, and the dielectric layer encloses the top electrode. The thickness of the p-type semiconductor layer is between 0.5 ?m and 3.

Abstract: There are provided a magnetoplumbite-type hexagonal crystal ferrite magnetic powder which can be suitably used as the material of a radio wave absorber having an excellent radio wave absorbing power in the 76 GHz band, and a method for producing the same. In a method for producing a magnetoplumbite-type hexagonal crystal ferrite magnetic powder, the method comprising the steps of: mixing powders of the raw materials of a magnetoplumbite-type hexagonal crystal ferrite magnetic powder, which is expressed by a compositional formula of AFe(12-x)AlxO19 (A is at least one selected from the group consisting of Sr, Ba, Ca and Pb, x=1.0 to 2.

Abstract: Provided is a reflective electrode for a deep ultraviolet light-emitting element that enables a balance of both high light emission output and excellent reliability. A method of producing the reflective electrode for a deep ultraviolet light-emitting element includes: a first step of forming Ni with a thickness of 3 nm to 20 nm as a first metal layer on a p-type contact layer having a superlattice structure; a second step of forming Rh with a thickness of not less than 20 nm and not more than 2 ?m as a reflective metal on the first metal layer; and a third step of performing heat treatment of the first metal layer and the second metal layer at not lower than 300° C. and not higher than 600° C.

Abstract: Disclosed is a deep ultraviolet light-emitting device which includes on a substrate 10 in order: an n-type semiconductor layer 30, a light-emitting layer 40, a p-type electron block layer 60, and a p-type contact layer 70, wherein the p-type contact layer 70 comprises a superlattice structure having an alternating stack of: a first layer 71 made of AlxGa1-xN having an Al composition ratio x higher than an Al composition ratio w0 of a layer configured to emit deep ultraviolet light in the light-emitting layer; and a second layer 72 made of AlyGa1-yN having an Al composition ratio y lower than the Al composition ratio x, and the Al composition ratio w0, the Al composition ratio x, the Al composition ratio y, and a thickness average Al composition ratio z of the p-type contact layer satisfy the formula [1] 0.030<z?w0<0.20 and the formula [2] 0.050?x?y?0.47.

Abstract: There is provided an electrically conductive paste which can prevent the increase of the volume resistivity of an electrically conductive film formed from the electrically conductive paste even if the electrically conductive film is heated to a soldering temperature of about 380° C. when the electrically conductive paste is a resin type electrically conductive paste using a silver powder and a silver-coated copper powder. In an electrically conductive paste containing a resin, a silver powder and a silver-coated copper powder having a copper powder, the surface of which is coated with a silver layer, the resin is an epoxy resin having a naphthalene skeleton, and there is added a dicarboxylic acid, preferably a dicarboxylic acid having a rational formula of HOOC—(CH2)n—COOH (n=1-8), and more preferably a dicarboxylic acid having a rational formula of HOOC—(CH2)n—COOH (n=4-7).

Abstract: An object of the present invention is to provide a magnetic powder having a narrow particle size distribution of epsilon-type iron oxide particles, and another object is to provide magnetic powder suitable for magnetic recording medium by improving particle size distribution, and provide epsilon-type iron oxide magnetic particles and related technologies in which a number average particle diameter of major diameters (D50) is 10 to 20 nm, a 90% cumulative particle diameter (D90) is 30 nm or less, and a geometric standard deviation (?g) of major diameters is 1.45 or less, which are obtained by TEM observation.

Abstract: Provided is a semiconductor light-emitting element having improved light emission output. The semiconductor light-emitting element includes a light-emitting layer having a layered structure in which a first III-V compound semiconductor layer and a second III-V compound semiconductor layer having different composition ratios are repeatedly stacked. The first and second III-V compound semiconductor layers each contain three or more types of elements that are selected from Al, Ga, and In and from As, Sb, and P. The composition wavelength difference between the composition wavelength of the first III-V compound semiconductor layer and the composition wavelength of the second III-V compound semiconductor layer is 50 nm or less. The ratio of the lattice constant difference between the lattice constant of the first III-V compound semiconductor layer and the lattice constant of the second III-V compound semiconductor layer is not less than 0.05% and not more than 0.60%.

Abstract: A deep ultraviolet light-emitting element of this disclosure includes, in this order, an n-type semiconductor layer; a light-emitting layer; and a p-type semiconductor layer. An emission spectrum of the deep ultraviolet light-emitting element has a primary emission peak wavelength in a wavelength range of 200 nm or more and 350 nm or less, and a blue-violet secondary light emission component having a relative emission intensity of 0.03% to 10% across a wavelength range of 430 to 450 nm, a yellow-green secondary light emission component having a relative emission intensity of 0.03 to 10% across a wavelength range of 540 to 580 nm, when the relative emission intensities are expressed relative to an emission intensity at the primary emission peak wavelength taken as 100%. The ratio of an emission intensity at a wavelength of 435 nm to an emission intensity at a wavelength of 560 nm is 0.5 to 2.

Abstract: An iron powder and method of making an iron powder. The method includes a step of neutralizing an acidic aqueous solution containing a trivalent iron ion and a phosphorus-containing ion, with an alkali aqueous solution, so as to provide a slurry of a precipitate of a hydrated oxide, or a step of adding a phosphorus-containing ion to a slurry containing a precipitate of a hydrated oxide obtained by neutralizing an acidic aqueous solution containing a trivalent iron ion with an alkali aqueous solution. A silane compound is added to the slurry so as to coat a hydrolysate of the silane compound on the precipitate of the hydrated oxide. The precipitate of the hydrated oxide after coating is recovered through solid-liquid separation, the recovered precipitate is heated to provide iron particles coated with a silicon oxide, and a part or the whole of the silicon oxide coating is dissolved and removed.

Abstract: The group III nitride semiconductor light emitting element according to this disclosure has, on a substrate, an n-type semiconductor layer, a light emitting layer, a p-type AlGaN electron blocking layer, a p-type contact layer and a p-side reflection electrode, in this order, wherein, a center emission wavelength of light emitted from the light emitting layer is 250 nm or greater and 330 nm or smaller, the Al composition ratio of the p-type AlGaN electron blocking layer is 0.40 or greater and 0.80 or smaller, the film thickness of the p-type contact layer is 10 nm or greater and 50 nm or smaller, and the p-type contact layer has a p-type AlGaN contact layer having Al composition ratio of 0.03 or greater and 0.25 or smaller.

Abstract: To provide magnetic composite particles which can be separated from a sample solution in a short period of time using magnetism, and furthermore, have an excellent dispersion stability in the sample solution, which are magnetic composite particles in which an outer shell is formed on surfaces of core particles containing an inorganic oxide or a polymer, wherein the outer shell comprises magnetic nanoparticles and a silicon compound, the value of the volume average particle diameter (dTEM) of the magnetic composite particles measured by a transmission electron microscope is 30 nm or more to 210 nm or less, and the value of (dDLS)/(dTEM) which is the ratio of the value of the particle diameter (dDLS) of the particles measured by a dynamic light scattering method and the value of the volume average particle diameter (dTEM) is 2.0 or less.