Abstract: Leadframe stock 12 with frame portions 10 on which leadframes 1A and 1B are supported by means of support bridges 11A and 11B, and concave reflector mirror stock 14 with frame portions 16 on which concave reflector mirror 7 is supported by means of support bridges 17 and which are provided with a glossy plate are made by blanking or etching metal sheets and press forming which is applied to make the concave reflector mirror stock 14; the two stocks are made integral by joining their respective frame portions; the essential parts of the stocks including an LED chip and the concave reflector mirror 7 are molded with light-transmissive resin 2 such that they are completely buried in the resin; the support bridges 11A, 11B and 17 are then cut off to sever the individual frame portions to produce a reflecting LED lamp apparatus that is rigid, highly resistant to heat and commercially available at low cost.

Abstract: An insulating substrate board for a semiconductor of the present invention comprises a ceramic substrate board (2) and a metal alloy layer (3) consisting of aluminum formed on one surface portion of the ceramic substrate board (2), wherein the Vickers hardness of the metal alloy layer (3) is not less than 25 and not more than 40. The metal alloy layer (3) includes silicone of not less than 0.2% by weight and not more than 5% by weight. The ceramic substrate board (2) is made of a material selected from a group consisting of alumina, aluminum nitride, and silicone nitride.

Abstract: In a process for separating impurities from a raw gallium material containing impurities, a process for refining gallium comprising progressively solidifying a raw gallium material provided in a liquid state inside a vessel while applying stirring, such that the diameter of the tubular solidification boundary gradually advances from the inner wall plane of the vessel towards the center of the vessel to reduce the diameter of the tubular solidification boundary, and separating the liquid phase remaining in the central portion of the vessel from the solidified phase before the entire raw material inside the vessel is solidified. The process above is repeated as required by using, as the raw gallium material, the solidified phase from which the liquid phase is separated. A metallic gallium favorably used for the preparation of a compound semiconductor can be obtained by analyzing the impurity concentration of the impurity-concentrated Ga separated from the solidified layer.

Abstract: A method for directly leaching a zinc concentrate in one of the stages contained in the hydrometallurgical process for the production of electrolytic zinc. The method comprises: a neutral leach step, a zinc concentrate leach step, and an iron oxidation step. In the zinc concentrate leach step, a neutral leach residue and an iron sediment returned from the iron oxidation step are repulped by the spent electrolyte followed by adding thereto zinc concentrate to extract zinc from the zinc concentrate by carrying out a leaching under atmospheric pressure and at a temperature of not lower than 90° C., but not higher than the boiling point of the solution. According to this method, the concentration of Fe(III) ions in the zinc concentrate leach solution is significantly increased. Due to this Fe(III) ion concentration, the leaching rate of the zinc concentrate is enhanced.

Abstract: A negative electrode material for use in an alkaline cell. The negative electrode material comprising bismuth-coated zinc powder particles containing at least one element selected from the group consisting of Al, Bi and In. The zinc or zinc alloy powder preferably has a particle size within the range of 10 &mgr;m to 1000 &mgr;m. The bismuth-coated zinc powder particles are obtained by immersing a mixture of a zinc powder and a metallic bismuth powder in an aqueous alkaline solution to deposit bismuth on surfaces of the zinc powder particles by displacement.

Abstract: An apparatus for producing a high-purity silver material. The apparatus includes an electric furnace. The electric furnace has an outer cylinder which encloses an inner cylinder. The outer cylinder is capable of being evacuated with a vacuum pump. A recovery mold is disposed within the inner cylinder. An aspiration table is connected to a central portion of the recovery mold. A feed crucible is disposed above the recovery mold and is connected to the aspiration table. A cooling trap is disposed below the recovery mold. A water-cooling flange is disposed below the cooling mold.

Abstract: Silver-dispersed copper powder whose particles have substantially no discrete metallic silver on their surfaces is produced by subjecting a silver-adhered copper powder composed of copper particles having silver adhered to the surfaces thereof to heat treatment in a non-oxidizing atmosphere at a temperature of 150-600° C. A conductive paste using the powder as filler resists migration.

Abstract: A powder for use in the lower layer of a coating magnetic recording medium, comprising acicular particles with a mean major axis length in a range of from 0.01 to 0.5 &mgr;m and a mean minor axis length in a range of from 0.01 to 0.05 &mgr;m, provided that the acicular particles are flat acicular particles which, when cut in a direction perpendicular to the major axis, uniformly exhibit a cross section having a larger width to smaller width ratio of greater than 1, and that the quantity of discharged H2O at 100° C. is in a range of from 0.1 to 2.0% by weight.

Abstract: An ingot of a copper-base alloy containing a total of 0.

Abstract: A method for decomposing nitrogen fluoride or sulfur fluoride, comprising contacting gaseous nitrogen fluoride or sulfur fluoride with a solid reagent comprising elemental carbon, one or more of the alkaline earth metal elements and optionally one or more of the alkali metal elements, to fix the fluorine component in the nitrogen fluoride or sulfur fluoride in said reagent.

Abstract: A metal-ceramic composite substitute is produced by joining a metal plate to a ceramic substrate by using a brazing material in a paste form prepared by adding 10-14 parts by weight of a vehicle to 100 parts by weight of a powder of which the solid centent comprises 90.0˜99.5% of an Ag powder, 0˜9.5% of a Cu powder and 0.5˜4.0% of an active metal powder, and 0.0˜0.9% of a titanium oxide powder if necessary.

Abstract: The improved copper alloy suitable for use as a connector material contains 17-32 wt % of Zn, 0.1-4.5 wt % of Sn and 0.01-2.0 wt % of Si, with Zn and Sn satisfying the relation 54≦3X+Y≦100 where X is the amount in wt % of Zn added and Y is the amount in wt % of Sn added. Rolled material of the alloy can be produced by a process comprising the steps of melting a copper alloy of the composition specified above, cooling the melt over a temperature range from the liquidus line to 600° C. at a rate of at least 50° C./min, and subsequently hot rolling the resulting ingot at an elevated temperature of 900° C. or below.

Abstract: An aluminum nitride sintered product which is made mainly of aluminum nitride and contains an yttrium compound in an amount of from 0.6 to 5 wt % as calculated as yttrium oxide, a vanadium compound in an amount of from 0.02 to 0.4 wt % as calculated as vanadium and carbon in an amount of from 0.03 to 0.10 wt % and which has a three-point bending strength of at least 45 kg/mm and a thermal conductivity of at least 150 W/m·K, wherein crystal grains of aluminum nitride have an average grain size of at most 5 &mgr;m.

Abstract: A metal-ceramic circuit board is characterized by being constituted by bonding on a base plate of aluminum or aluminum alloy at least one of ceramic substrate boards having a conductive metal member for an electronic circuit. A method of manufacturing a metal-ceramic circuit board is characterized by comprising the steps of melting aluminum or aluminum alloy in a vacuum or inert gas atmosphere to form a molten metal, contacting one surface of a ceramic substrate board directly with the molten metal in a vacuum or inert gas atmosphere, cooling the molten metal and the ceramic substrate board to form a base plate of aluminum or aluminum alloy, which is bonded directly on the ceramic substrate board without forming any oxidizing film therebetween and bonding a conductive metal member for an electronic circuit on the ceramic substrate board by using a brazing material. The base plate has a proof stress not higher than 320 (MPa) and a thickness not smaller than 1 mm.

Abstract: A metal-ceramic composite substitute is produced by joining a metal plate to a ceramic substrate by using a brazing material in a paste form prepared by adding 10-14 parts by weight of a vehicle to 100 parts by weight of a powder of which the solid centent comprises 90.0˜99.5% of an Ag powder, 0˜9.5% of a Cu powder and 0.5˜4.0% of an active metal powder, and 0.0˜0.9% of a titanium oxide powder if necessary.

Abstract: A photodetection device 10 is provided wherein a condenser lens 12 is arranged in front of a photodetection element 11. This photodetection device is of high photodetection angular efficiency with a constant photodetection e.m.f. over a prescribed region, of high photodetection angular efficiency and does not pick up optical interference. By forming condenser lens 12 as a non-spherical lens that concentrates light onto a single point of convergence C without spherical aberration and moving the photodetection element 11 further towards lens 12 than the point of convergence C, it is arranged that light that has passed through condenser lens 12 is received over the entire region of the photodetection surface of photodetection element 11 and also that all of the light that is incident onto condenser lens 12 inclined at a prescribed angle is received by the photodetection surface.

Abstract: Copper-base alloys are provided that maintain high hot forgeability and cuttability and low-cost feature and which still are improved in resistance to dezincification. The alloys comprise 57-69% of Cu, 0.3-3% of Sn and 0.02-1.5% of Si, all percentages based on weight, with a Si/Sn value in the range of 0.05-1, and the balance being Zn and incidental impurities.

Abstract: Copper alloy having the basic composition Cu—Zn—Sn contains 23-28 wt % Zn and 0.3-1.8 wt % Sn and satisfies the relation 6.0≦0.25X+Y≦8.5 (where X is the addition of Zn in wt % and Y is the addition of Sn in wt %). The alloy is cast into an ingot by melting and cooling over the range from the liquidus line to 600° C. at a rate of at least 50° C./min; the ingot is hot rolled at a temperature not higher than 900° C. and then subjected to repeated cycles of cold rolling and annealing at 300-650° C. to control the size of crystal grains, thereby producing a rolled strip having a 0.2% yield strength of at least 600 N/mm2, a tensile strength of at least 650 N/mm2, an electrical conductivity of at least 20% IACS, a Young's modulus of no more than 120 kN/mm2 and a percent stress relaxation of no more than 20%.

Abstract: Wear resistant copper or a wear resistant copper base alloy having formed on the outermost surface thereof an oxide layer having a thickness of 10-1000 nm and a layer of an intermetallic compound primarily comprising Cu—Sn having a thickness of 0.1-10 &mgr;m under the oxide film layer is provided; a method of preparing the above-described wear resistant copper or copper base alloy by coating base material copper or a copper base alloy with Sn, preferably performing reflow treatment and then conducting heat treatment is provided; and an electrical part comprising the above-described wear resistant copper or copper base alloy is provided. A terminal made of the alloy according to the present invention which has an appropriate oxide film layer by performing heat treatment can greatly decrease a terminal-insertion force compared with that made of an ordinary copper base alloy which is not subjected to the heat treatment.

Abstract: A surface preparation method and semiconductor device constituted so as to enable the prevention of carrier accumulation resulting from Si acting as a donor, without making the constitution of a semiconductor manufacturing apparatus complex. When forming an epitaxial layer either on the surface of a substrate, or on the surface of a base layer, Si or an Si compound that exists on the surface of a substrate, or on the surface of a base layer, is removed in accordance with a thermal cleaning process that uses an As hydride gas as the cleaning gas.