Abstract: A reflective mask (e.g., an EUV reflective mask) and a method of making such a mask are disclosed. The mask includes an absorbent substrate and a reflective coating overlying the substrate. The reflective coating is patterned to include a circuit design that is to be transferred onto one or more wafers, and more particularly onto one or more die on the wafers, during semiconductor fabrication processing. The mask includes no other radiation absorbent material, and the occurrence and severity of dead zones, which commonly occur in conventional reflective masks and which degrade the fidelity of pattern transfers, are thereby mitigated. A methodology for inspecting the mask via the transmission of visible, UV or deep-UV radiation through the mask is also disclosed.

Abstract: A method for calibrating the scan amplitude of an electron beam lithography instrument by determining the position of a feature within the scan. The method is effective at the operating frequency of the scan and using a limited bandwidth video signal including the steps of determining the reference feature to be an edge over which the video signal rises abruptly from a background level to a white level. The method turns the beam on only over a short region of the scan and represents the degree of overlap between the beam on portion of the scan and the white part of the feature as the total video signal accumulated in that scan.

Abstract: A method and apparatus for coupling a pellicle to a photomask using a non-distorting mechanism are disclosed. A pellicle is coupled to a photomask with a non-distorting mechanism that is located on a pellicle frame opposite a thin film coupled to the pellicle frame. The non-distorting mechanism acts to reduce stress exerted on the photomask by the pellicle.

Abstract: A system and method for correcting connectivity errors in a mask layout are disclosed. The method includes comparing a first connection in a mask layout file to a second connection in a schematic netlist. A connectivity error is identified if the first connection does not match the second connection and the identified connectivity error is automatically corrected in the mask layout file.

Abstract: A photomask for reducing power supply voltage fluctuations in an integrated circuit and integrated circuit manufactured by the same are disclosed. The photomask includes a substrate and a patterned layer formed on at least a portion of the substrate. The patterned layer may be formed using a mask pattern file created by analyzing a pattern in a mask layout file to identify a region in the pattern to add one or more decoupling capacitors. Once the region is identified, a feature located in the identified region is moved based on a design rule from a first position to a second position in the mask layout file to create a space in the identified region. The decoupling capacitors are placed in the space in the identified region.

Abstract: A photomask and method for detecting failures in a mask pattern file using a manufacturing rule are disclosed. The method includes calculating a manufacturing rule based on a design parameter associated with a manufacturing process and measuring a dimension of a non-linear feature in a mask pattern file. A rule violation is identified in the mask pattern file if the measured dimension is less than the calculated manufacturing rule.

Abstract: A photomask and method for reducing electrostatic discharge on the photomask with an ESD protection pattern are disclosed. A photomask includes a substrate and a patterned layer formed on at least a portion of the substrate. The patterned layer includes an electrostatic discharge (ESD) patterned formed between an outer perimeter of an active region and an inner perimeter of a frame region. The ESD pattern reduces ESD effects in the patterned layer.

Abstract: A method for constructing a photomask assembly using an encoded mark is disclosed. The method includes comparing a first encoded mark located on a photomask with a second encoded mark located on a pellicle. The first encoded mark includes one or more first symbols and the second encoded mark includes one or more second symbols. The method further includes mounting the pellicle on the photomask if at least one of the symbols of the first encoded mark matches at least one of the symbols of the second encoded mark.

Abstract: A system and method for generating a mask layout file to reduce power supply voltage fluctuations in an integrated circuit are disclosed. The method includes analyzing a pattern in a mask layout file to identify a region in the pattern to add one or more decoupling capacitors. Once the region is identified, a feature located in the identified region is moved based on a design rule from a first position to a second position in the mask layout file to create a space in the identified region. The decoupling capacitors are automatically placed in the space in the identified region.

Abstract: A photomask and method for evaluating an initial calibration for a scanning electron microscope are disclosed. The method includes generating an initial calibration for a SEM that contains a target width for a feature on a reference target and measuring the feature on the reference target in the SEM to determine a measured width for the feature. The measured width is compared to the target width to generate a shift deviation and a current calibration for the SEM is adjusted based on the shift deviation.

Abstract: A method and apparatus for calibrating a metrology tool are disclosed. The method includes measuring a parameter of a contrast enhanced feature on an artifact using a metrology tool, where the contrast enhanced feature reduces random errors in the metrology tool during the measuring process. The measured parameter is compared with an initial parameter associated with the artifact and the metrology tool is adjusted until the measured parameter matches the initial parameter.

Abstract: A method for producing a halftone phase shift mask blank having a semi-transmission film on a transparent substrate includes alternately laminating, on a transparent substrate, thin layers substantially made of nitrogen and titanium and thin layers substantially made of nitrogen and silicon to thereby form thereon a multi-layered semi-transmission film, followed by heating the semi-transmission film at 300° C. or higher.

Abstract: A method for fabricating a damage resistant photomask includes forming a photomask pattern on a substrate and forming a transparent, protective coating on the photomask pattern. The protective coating may be an electrical insulator (e.g., spin-on glass). In addition, an antireflective layer may be applied to the protective coating. A pellicle may also be attached over the protective coating. The protective coating may prevent electrostatic energy from forming on or arcing between features on the photomask pattern and damaging the features. The protective layer may also prevent the photomask pattern from being damaged by or reacting with other substances, such as cleaning solutions.

Abstract: A method and apparatus for coupling a pellicle assembly to a photomask are disclosed. A pellicle assembly is mounted on a photomask by bringing an adhesive material formed on a surface of a frame associated with the pellicle assembly in contact with the photomask. The adhesive material is heated to cause the adhesive gasket to flow and comply with a flatness of the photomask.

Abstract: A method and apparatus for trimming a pellicle film using a laser are disclosed. A laser trimming assembly includes a modified laser-cutting head coupled to a laser. The laser includes a laser beam for trimming a pellicle film that extends beyond a perimeter of a pellicle frame. The modified laser-cutting head includes a nozzle and at least one hose port located on the nozzle. The hose port may receive a vacuum hose for removing particulate matter created during a trimming process.

Abstract: A photomask and a method for forming an opaque border on the same are disclosed. In an example method of manufacturing a photomask, no more than one patterning operation is used to form a mask field with an opaque border substantially surrounding the mask field. The border region may be substantially covered by an opaque material, and features in the mask field may be free from the opaque material. When the photomask is used to expose a pattern on an object, the opaque border may substantially prevent electromagnetic radiation (EMR) from exposing portions of the object outside the field of exposure associated with the mask field. The operation of forming the mask field may include forming an insulating clear region surrounding the features and leaving the border region outside the insulating clear region. The opaque layer may be deposited by electroplating or spraying an opaque material onto the border region.

Abstract: A multi-tone photomask and method for manufacturing the same are disclosed. A photomask includes a filter layer formed on at least a portion of a substrate. The filter layer includes a first pattern formed by a first etch process. A barrier layer including the first pattern is formed on at least a portion of the filter layer by a second etch process. An absorber layer including a second pattern is formed on at least a portion of the barrier layer by a third etch process. The barrier layer further acts as an etch stop for the third etch process.

Abstract: A system and method for eliminating design rule violations during construction of a mask layout block are disclosed. The method includes analyzing a selected position for a polygon in a mask layout block and obtaining one or more design rules associated with the polygon from a technology file. The method provides a hint area associated with the selected position for the polygon that graphically represents a space in the mask layout block where the selected position complies with the design rule violation.

Abstract: A photomask and integrated circuit manufactured by eliminating design rule violations during construction of a mask layout block are disclosed. A photomask includes a substrate and a patterned layer formed on at least a portion of the substrate. The patterned layer may be formed using a mask pattern file created by analyzing a selected position for a polygon in a mask layout block, identifying a design rule violation in the mask layout block if the selected position is less than a design rule from a technology file, and automatically preventing the polygon from being placed in the mask layout block at the selected position if the design rule violation is identified.

Abstract: A photomask and method for eliminating design rule violations from the photomask are disclosed. A photomask includes a substrate and a patterned layer formed on at least a portion of the substrate. The patterned layer may be formed using a mask pattern file created by comparing a feature dimension in a mask layout file with a design rule in a technology file, identifying a design rule violation if the feature dimension is less than the design rule and automatically correcting the identified design rule violation in the mask layout file.