Abstract: The present disclosure describes an Alternating Aperture Phase Shifting (AAPS) photomask with improved transmission balance. The method includes forming an alternating aperture phase shifting photomask pattern on a substrate, including forming trenches within the substrate. The method further includes forming a transmission balancing layer over the substrate. More particularly, the method includes forming the transmission balancing layer from a material having a higher index of refraction than the substrate. In one embodiment the transmission balancing layer may be formed from spin on glass (SOG). Another embodiment of the invention may include an enhanced AAPS photomask fabricated according to the above method.

Abstract: A photomask assembly and method for protecting the photomask assembly from contaminants generated during a lithography process are disclosed. A photomask assembly includes a pellicle assembly formed from a pellicle frame and a pellicle film coupled to a first surface of the pellicle frame. The pellicle frame further includes an inner wall and an outer wall. A photomask is coupled to a second surface of the pellicle frame opposite the pellicle film. A molecular sieve that prevents airborne molecular contaminants (AMCs) generated during a lithography process from contaminating the photomask is associated with the pellicle assembly.

Abstract: The present disclosure includes describes a method for fabricating an AAPS photomask with improved intensity balance. The method includes forming an alternating aperture phase shifting photomask pattern on a substrate, including forming trenches within the substrate. The method further includes forming a layer of antireflective material within the bottom of at least one trench. In one embodiment the layer antireflective material is Magnesium Fluoride (MgF2) formed using a vacuum evaporation technique. The layer of antireflective material formed at the bottom of the trench areas increases the transmission of light through the trench areas by improving light coupling into the trench.

Abstract: A covered photomask holder and a method of using the covered photomask holder are disclosed. A photomask holder includes a gripping mechanism to engage and retain a component with the photomask holder. A handle is coupled to the gripping mechanism that manipulates the gripping mechanism. A protective cover is associated with the gripping mechanism that encloses the component while engaged within the photomask holder.

Abstract: A method and apparatus evaluates the runability of a photomask inspection tool that inspects plural sets of die, each die having a standard simulated industrial device feature at plural technology nodes. A technology node size is determined for each feature at which inspection by the tool provides no false detection of faults. A sensitivity module included on a photomask test plate along with a runability module allows determination of inspection tool sensitivity and runability in a single test sequence.

Abstract: A method and system for electronic order entry and automatic processing of photomask orders is disclosed. A method for order entry and processing in the manufacturing of a photomask component includes electronically receiving a product order information file. The product order information is automatically translated into a standard database format. The translated product order information file is then automatically processed using a rules engine to apply a predefined set of customer requirements to the product order information file such that the product order information is loaded into an order entry module. The order entry module is used to automatically create a production file necessary for the production of a photomask component according to the product order information file.

Abstract: A method and apparatus for reducing loading effects on a semiconductor manufacturing component during an etch process is disclosed. The transmittance associated with a photomask is calculated and the etch process for a material formed on a semiconductor manufacturing component is adjusted based on the transmittance calculated for the photomask.

Abstract: A method for producing a halftone phase shift mask blank having a semi-transmission film on a transparent substrate includes alternately laminating, on a transparent substrate, thin layers substantially made of nitrogen and titanium and thin layers substantially made of nitrogen and silicon to thereby form thereon a multi-layered semi-transmission film, followed by heating the semi-transmission film at 300° C. or higher.

Abstract: A photomask and method for repairing defects on the same are disclosed. The photomask preferably includes a substrate, a buffer layer and a nontransmissive layer with the buffer layer disposed between the substrate and the nontransmissive layer. The method includes forming a pattern in the nontransmissive layer. If one or more defects are identified in the patterned nontransmissive layer, the buffer layer protects the substrate from damage when defects in the patterned nontransmissive layer are repaired.

Abstract: A test wafer and method for investigating electrostatic discharge induced wafer defects are disclosed. The test wafer includes an electrostatic discharge (ESD) sensitive risk scale geometry, formed thereon. After exposure to a semiconductor manufacturing procedure, the test wafer may be analyzed by using the ESD risk scale geometry to identify and evaluate severity of any ESD effects associated with the semiconductor manufacturing procedure.

Abstract: A photomask and method for qualifying the same with a prototype specification are disclosed. The method includes comparing a plurality of die sites formed in a patterned layer on a photomask with a prototype specification. If at least one of the die sites complies with the prototype specification, the photomask is selected for used in a semiconductor manufacturing process.

Abstract: A computer network for generating instructions for photomask manufacturing equipment, based on photomask specification data input by a customer. A series of order entry screens are downloaded to a remote customer's computer, typically via an internet connection. The customer is prompted to enter photomask specification data, which is delivered to computing equipment on the manufacturer's local network. The manufacturer's computing equipment validates the photomask specification data, and uses this data to generate fracturing instructions and equipment control instructions. The fracturing instructions, together with pattern design data from the customer, are delivered to a fracture engine, which provides fractured pattern data. The control instructions and the fractured pattern data may then be electronically delivered to the manufacturing equipment.

Abstract: A method and apparatus for monitoring and evaluating effects of electrostatic discharge associated with semiconductor manufacturing are disclosed. The method may include, for example, exposing a test photomask that contains an ESD sensitive geometry to a single or a variety of semiconductor manufacturing procedures. The test photomask may be analyzed to determine how much, if any, degradation of its geometry has occurred as a result of the exposure.

Abstract: A method for correcting pattern errors on a photomask is disclosed. The method includes determining a proximity effect caused by a first feature on a second feature in a pattern data file. The total line edge length is calculated for the first feature and a dimension of the second feature is modified based on the total line edge length calculated or the first feature.

Abstract: A dust cover having a film with an inorganic, anti-reflective coating and method for use during semiconductor fabrication. The dust cover is primarily for use during photolithography. The dust cover may include an amorphous fluoropolymer film having an inorganic, anti-reflective coating attached to a frame. The inorganic, anti-reflective coating preferably has a refractive index below 1.4.

Abstract: A multi-tone photomask and method for manufacturing the same are disclosed. A photomask includes a filter layer formed on at least a portion of a substrate. The filter layer includes a first pattern formed by a first etch process. A barrier layer including the first pattern is formed on at least a portion of the filter layer by a second etch process. An absorber layer including a second pattern is formed on at least a portion of the barrier layer by a third etch process. The barrier layer further acts as an etch stop for the third etch process.

Abstract: A dust cover having a film with an inorganic, anti-reflective coating and method for use during semiconductor fabrication. The dust cover is primarily for use during photolithography. The dust cover may include an amorphous fluoropolymer film having an inorganic, anti-reflective coating attached to a frame. The inorganic, anti-reflective coating preferably has a refractive index below 1.4.

Abstract: A method and apparatus evaluates the runability of a photomask inspection tool that inspects plural sets of die, each die having a standard simulated industrial device feature at plural technology nodes. A technology node size is determined for each feature at which inspection by the tool provides no false detection of faults. A sensitivity module included on a photomask test plate along with a runability module allows determination of inspection tool sensitivity and runability in a single test sequence.

Abstract: A system and method for correcting connectivity errors in a mask layout are disclosed. The method includes comparing a first connection in a mask layout file to a second connection in a schematic netlist. A connectivity error is identified if the first connection does not match the second connection and the identified connectivity error is automatically corrected in the mask layout file.

Abstract: A photomask and integrated circuit manufactured by eliminating design rule violations during construction of a mask layout block are disclosed. A photomask includes a substrate and a patterned layer formed on at least a portion of the substrate. The patterned layer may be formed using a mask pattern file created by analyzing a selected position for a polygon in a mask layout block, identifying a design rule violation in the mask layout block if the selected position is less than a design rule from a technology file, and automatically preventing the polygon from being placed in the mask layout block at the selected position if the design rule violation is identified.