Patents Assigned to ELM
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Publication number: 20110143636Abstract: An optical disk restoration apparatus and optical disk restoration method are provided, which are capable of achieving a high level of capability of restoring a scratched optical disk, without consuming the time and labor of an operator, while reducing the production cost of the apparatus. During a polishing process, an appropriate amount of a polishing agent is dropped onto the readout surface of the optical disk by a polishing agent supply pump to continuously supply the polishing agent to the interface between the optical disk and polishing pads, while a polishing water supply pump is operated to replenish the polishing agent with moisture evaporated by the polishing heat. By this mechanism, the amount and physical properties of the polishing agent at the interface between the optical disk and the polishing pads are appropriately maintained for a long period of time, so that the restoration capability is maintained at high levels.Type: ApplicationFiled: August 31, 2009Publication date: June 16, 2011Applicant: ELM INC.Inventors: Takakazu Miyahara, Terumasa Miyahara, Kazutoshi Chijiiwa
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Publication number: 20110072916Abstract: An improved metering apparatus includes a metering pipette (1) and a metering attachment (2). The metering pipette (1) includes a metering body (3) and a piston (4) which is longitudinally displaceably guided in the metering body (3). The metering attachment (2) is connected or connectable to the metering pipette (1). It includes a stop body (16) having a stop (17) for the piston (4) (FIG. 2).Type: ApplicationFiled: September 28, 2010Publication date: March 31, 2011Applicant: elm-plastic GmbHInventors: Birgit Lonien, Sascha Moehs
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Patent number: 7857951Abstract: The present invention intends to provide a water purification apparatus that is small and easy-to-use, yet being capable of efficiently creating flocs of impurities and removing the impurities from the wastewater in a single pass. To achieve this objective, an inner tubular anode 12 made of stainless steel or carbon is inserted into an outer tubular cathode 11 made of aluminum, leaving a predetermined intermediate space 13 between them, and electrolysis is carried out to produce aluminum hydroxide. The aluminum hydroxide thus produced serves as the medium for flocculating the impurities in the wastewater ascending the intermediate space 13. The wastewater containing the flocs of impurities is filtrated with a filter 18 within a filtering and settling tank 17. As a result, the impurities are completely removed from the wastewater.Type: GrantFiled: May 20, 2004Date of Patent: December 28, 2010Assignee: Elm Inc.Inventors: Takakazu Miyahara, Terumasa Miyahara
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Patent number: 7813985Abstract: A Group Equity-Indexed Annuity (GEIA) with a guaranteed minimum equity related return for a set of individuals are provided. An algorithm sets a “participation rate” of a GEIA contract as well as the carrier margin, risk and opportunity for recovery. The carrier is held accountable to the participation rate produced by the model investment portfolio in the formula and subject to the guaranteed minimum. The selection of the participation rate is entirely visible to a GEIA contract-holder. A “hedge budget” is based on a formula-driven amortization process that blends old and new money. Underlying assets are also managed to a “constant” duration, such as the duration of a bond index selected by the GEIA contract-holder.Type: GrantFiled: June 20, 2006Date of Patent: October 12, 2010Assignee: Elm Income Group, Inc.Inventors: Christopher W. O'Flinn, Felix Schirripa
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Publication number: 20100115834Abstract: In a germination/growing apparatus having: a heat shield chamber that can be opened and closed; an illuminator for illuminating the inside of the heat shield chamber; a temperature regulator for heating and/or cooling the inside of the heat shield chamber; and a controller for controlling the temperature regulator, whereby seeds or plants are contained in the germination/growing apparatus for germinating or growing in the heat shield chamber, a breath inspirer for inspiring a human breath to the heat shield chamber is provided. With this configuration, the concentration of the carbon dioxide in the heat shield chamber can be increased, and the growth of the plant can be promoted.Type: ApplicationFiled: April 25, 2008Publication date: May 13, 2010Applicant: ELM INC.Inventor: Takakazu Miyahara
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Patent number: 7705466Abstract: A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, reducing cost. Fabrication of 3DS memory involves thinning of the memory circuit to less than 50 ?m in thickness and bonding the circuit to a circuit stack while still in wafer substrate form. Fine-grain high density inter-layer vertical bus connections are used. The 3DS memory manufacturing method enables several performance and physical size efficiencies, and is implemented with established semiconductor processing techniques.Type: GrantFiled: September 26, 2003Date of Patent: April 27, 2010Assignee: Elm Technology CorporationInventor: Glenn J Leedy
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Publication number: 20090307236Abstract: A method of managing backup records is provided. A central server receives, across a network, the contents of a first backup catalog from a first backup server as well as the contents of a second (distinct) backup catalog from a second backup server. The central server also extracts backup records from the first backup catalog and the second backup catalog and places the contents of each extracted backup record into a central backup catalog on the central server. Software for carrying out the method is also provided.Type: ApplicationFiled: June 5, 2008Publication date: December 10, 2009Applicant: ELM TECHNOLOGIES, INC.Inventors: Eric Scott Kramer, Michael David Kramer, Leonard Joseph DiCarlo
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Patent number: 7625263Abstract: The present invention intends to provide an optical disk restoration apparatus that is simple structured and small sized to reduce the production cost, and that can evenly apply a substantially uniform pressing force. This object can be achieved by an optical disk restoration apparatus, including a turntable 41 on which an optical disk 10 is set via a non-slip sheet 45, a polishing body holder 47 for holding a polishing body 46, a pressing mechanism for pressing the polishing body 46 and the optical disk 10 onto each other with a predetermined pressure required for the polishing process, and a motor 48 for rotating at least the polishing holder 47 and the polishing body 46 to polish the surface of the optical disk 10, where the surface of the turntable 41 and/or the sheet 45 is provided with at least one of an inclined, step-like or curved profile.Type: GrantFiled: October 20, 2003Date of Patent: December 1, 2009Assignee: Elm Inc.Inventors: Terumasa Miyahara, Takakazu Miyahara
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Patent number: 7550805Abstract: General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D IC fabrication.Type: GrantFiled: June 11, 2003Date of Patent: June 23, 2009Assignee: ELM Technology CorporationInventor: Glenn Joseph Leedy
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Patent number: 7504732Abstract: A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, reducing cost. Fabrication of 3DS memory involves thinning of the memory circuit to less than 50 ?m in thickness and bonding the circuit to a circuit stack while still in wafer substrate form. Fine-grain high density interlayer vertical bus connections are used. The 3DS memory manufacturing method enables several performance and physical size efficiencies, and is implemented with established semiconductor processing techniques.Type: GrantFiled: August 19, 2002Date of Patent: March 17, 2009Assignee: Elm Technology CorporationInventor: Glenn J. Leedy
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Publication number: 20090052295Abstract: An optical disk polishing device which includes: a disk holder for rotatably holding an optical disk 11, the disk holder installed in a lower fixed portion 10; a cylindrical buff disposed in parallel with the surface of the optical disk 11 and perpendicular to a rotary shaft of the disk holder in an offset manner; a drive motor to rotate the buff 21; and an upper opening-and-closing portion 20 normally urged to an open state to the lower fixed portion 10 by a spring or other member. The device makes it possible to clean a readout surface of the optical disk in a short period of time, and to be offered at a low price owing to the simple and small-sized structure thereof.Type: ApplicationFiled: February 9, 2007Publication date: February 26, 2009Applicant: ELM INC.Inventors: Takakazu Miyahara, Terumasa Miyahara
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Patent number: 7485571Abstract: General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D IC fabrication.Type: GrantFiled: September 19, 2003Date of Patent: February 3, 2009Assignee: Elm Technology CorporationInventor: Glenn J Leedy
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Patent number: 7479694Abstract: General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D IC fabrication.Type: GrantFiled: December 19, 2003Date of Patent: January 20, 2009Assignee: Elm Technology CorporationInventor: Glenn J Leedy
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Publication number: 20090008871Abstract: A shredder paper feed mechanism and paper feeder that, simply by setting a paper stack in the paper tray, enable a stack of document sheets to be fed to the shredder in an amount that matches the shredding capability of the shredder. This is done by using first and second rotating members equipped with claw members. The paper feed mechanism utilizes the transmitted rotary driving force of the shredder unit. The paper feed mechanism has a first rotating member having disc-shaped claw members with sharp portions for feeding the paper sheets, and rotation members; a transport roller; a second rotating member that limits the number of paper sheets that are fed onwards, and also has disc-shaped claw members with sharp portions for feeding the paper sheets, and rotation members; and a pressure roller that presses against the second rotating member to thereby grip and feed the paper sheets.Type: ApplicationFiled: October 26, 2007Publication date: January 8, 2009Applicant: ELM International Co., Ltd.Inventor: Kazuyoshi OMI
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Patent number: 7474004Abstract: A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, reducing cost. Fabrication of 3DS memory involves thinning of the memory circuit to less than 50 ?m in thickness and bonding the circuit to a circuit stack while still in wafer substrate form. Fine-grain high density inter-layer vertical bus connections are used. The 3DS memory manufacturing method enables several performance and physical size efficiencies, and is implemented with established semiconductor processing techniques.Type: GrantFiled: December 18, 2003Date of Patent: January 6, 2009Assignee: Elm Technology CorporationInventor: Glenn J Leedy
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Publication number: 20080302559Abstract: General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D IC fabrication.Type: ApplicationFiled: January 18, 2008Publication date: December 11, 2008Applicant: Elm Technology CorporationInventor: Glenn Joseph Leedy
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Publication number: 20080284611Abstract: The Vertical System Integration (VSI) invention herein is a method for integration of disparate electronic, optical and MEMS technologies into a single integrated circuit die or component and wherein the individual device layers used in the VSI fabrication processes are preferably previously fabricated components intended for generic multiple application use and not necessarily limited in its use to a specific application. The VSI method of integration lowers the cost difference between lower volume custom electronic products and high volume generic use electronic products by eliminating or reducing circuit design, layout, tooling and fabrication costs.Type: ApplicationFiled: June 21, 2008Publication date: November 20, 2008Applicant: ELM TECHNOLOGY CORPORATIONInventor: Glenn J. Leedy
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Publication number: 20080254572Abstract: The Vertical System Integration (VSI) invention herein is a method for integration of disparate electronic, optical and MEMS technologies into a single integrated circuit die or component and wherein the individual device layers used in the VSI fabrication processes are preferably previously fabricated components intended for generic multiple application use and not necessarily limited in its use to a specific application. The VSI method of integration lowers the cost difference between lower volume custom electronic products and high volume generic use electronic products by eliminating or reducing circuit design, layout, tooling and fabrication costs.Type: ApplicationFiled: June 21, 2008Publication date: October 16, 2008Applicant: ELM TECHNOLOGY CORPORATIONInventor: Glenn J. Leedy
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Publication number: 20080251941Abstract: The Vertical System Integration (VSI) invention herein is a method for integration of disparate electronic, optical and MEMS technologies into a single integrated circuit die or component and wherein the individual device layers used in the VSI fabrication processes are preferably previously fabricated components intended for generic multiple application use and not necessarily limited in its use to a specific application. The VSI method of integration lowers the cost difference between lower volume custom electronic products and high volume generic use electronic products by eliminating or reducing circuit design, layout, tooling and fabrication costs.Type: ApplicationFiled: June 21, 2008Publication date: October 16, 2008Applicant: ELM TECHNOLOGY CORPORATIONInventor: Glenn J. Leedy
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Patent number: PP20097Abstract: A new and distinct variety of American elm tree, particularly distinguished by substantial tolerance to an epiphytotic and normally deadly vascular wilt disease of the genus Ulmus known as Dutch elm disease.Type: GrantFiled: February 9, 2007Date of Patent: June 16, 2009Assignees: The Elm Tree Farm, LLCInventors: Christian Bliska, Patricia Bliska, Mark Stennes, Chad Giblin