Abstract: The invention relates to a method for producing a micro-electromechanical device in a material substrate suitable for producing integrated electronic components, in particular a semiconductor substrate, wherein a material substrate (12,14,16) is provided on which at least one surface structure (26) is to be formed during production of the device. An electronic component (30) is formed in the material substrate (12,14,16) using process steps of a conventional method for producing integrated electronic components. A component element (44) defining the position of the electronic component (30) and/or required for the function of the electronic component (30) is selectively formed on the material substrate (12,14,16) from an etching stop material acting as an etching stop in case of etching of the material substrate (12,14,16) and/or in case of etching of a material layer (52) disposed on the material substrate (12,14,16).

Abstract: In the device and method for generating and evaluating ultrasound signals, particularly for determining the distance of a vehicle from an obstacle, an ultrasound received signal is received by at least one ultrasound receiver subscriber of a data bus, after a burst transmission signal comprising a plurality of ultrasound pulses and having a burst length has been transmitted by at least one ultrasound transmitter subscriber of the data bus. The ultrasound received signal is subdivided into time sections which are substantially equal to half the burst length. The peak value for each time section of the ultrasound received signal is transmitted via the data bus to a central control and evaluation unit.

Abstract: The semiconductor component, in particular for use as a component that is sensitive to mechanical stresses in a micro-electromechanical semiconductor component, for example a pressure or acceleration sensor, is provided with a semiconductor substrate (1,5), in the upper face of which an active region (78a,200) made of a material of a first conductivity type is introduced by ion implantation. A semiconducting channel region having a defined length (L) and width (B) is designed within the active region (78a, 200). In the active region (78a,200), each of the ends of the channel region located in the longitudinal extension is followed by a contacting region (79, 80) made of a semiconductor material of a second conductivity type.

Abstract: The micro-electromechanical semiconductor component is provided with a semiconductor substrate (4, 5), a reversibly deformable bending element (8a) made of semiconductor material, and at least one transistor that is sensitive to mechanical stresses, said transistor being designed as an integrated component in the bending element (8a). The transistor is arranged in an implanted active region pan (78a) that is made of a semiconductor material of a first conducting type and is introduced in the bending element (8a). Two mutually spaced, implanted drain and source regions (79, 80) made of a semiconductor material of a second conducting type are designed in the active region pan (78a), a channel region extending between said two regions. Implanted feed lines made of a semiconductor material of the second conducting type lead to the drain and source regions (79, 80). The upper face of the active region pan (78a) is covered by a gate oxide (81a).

Abstract: The microelectromechanical component has a semiconductor substrate (1), which has a cavity (2a) formed in the semiconductor substrate. The cavity is covered by a reversibly deformable membrane (2). A sensor (17) for detecting a deformation of the membrane (2) is formed within the region of the membrane (2). A test actuator (28, 29, 30) for deforming the membrane (2) for testing purposes is also arranged within the region of the membrane (2). Finally, the microelectromechanical component has an evaluation and activation unit (41) connected to the sensor (17) and the test actuator (28, 29, 30) for activating the test actuator (28, 29, 30) in order to deform the membrane (2) as a test and for evaluating a measurement signal of the sensor (17) as a sensor detection of a deformation of the membrane (2) as a result of the activation of the test actuator (28, 29, 30).

Abstract: A circuit is disclosed for supplying energy to a sequential circuit of typically non-linear loads by a current source. The load is preferably a series circuit of light emitting diodes (LEDs). Said current-operated load, preferably a LED series circuit, consisting of one to N elements is partially short-circuited and thus dimmed.

Abstract: Methods are directed to checking a pressure sensor comprising a reversibly deformable, in particular reversibly bendable measuring element which supplies a measurement signal having a value depending on the degree of deformation of said measuring element, to the effect of whether the pressure sensor withstands a required maximum pressure which is larger by a predeterminable factor than a nominal pressure for which the sensor is designed. The methods generally involve use of a reference pressure sensor, which is structurally identical to the pressure sensor to be checked, for generating a distance/pressure characteristic curve and for evaluating the critical pressure required for breaking the measuring element. The critical pressure can then be used to determine if a particular value of pressure is larger than the required maximum pressure that the pressure sensor to be checked is intended to withstand.

Abstract: A device for measuring a measured optical transmission path includes a first optical transmitter transmitting into the measured optical tramsmission path and a compensation transmitter transmitting into a compensation optical transmission path. The device includes an optical receiver for receiving transmissions from each of the first optical transmitter and the compensation transmitter. A controller controls the compensation transmitter and provides a controller output signal representative of a measured value of the first transmission path. A nose piece separates the optical transmitter from the optical receiver. The compensation transmitter is placed in a first cavity. The receiver is placed in a second cavity. A filter in the measured optical transmission path has a transmissivity for the wavelength of the light of the first optical transmitter of at least 50% and an absorption factor for the wavelength of the light of the compensation transmitter of at least 25%.

Abstract: The invention relates methods and devices for compensating for load factors in permanently excited motors, wherein the rotor position is determined from the inductivities of the phases. The methods and devices are characterized by a stabilization of the inductivity-based signals for the determination of the position of the rotor in permanently excited motors against load factors. To this end, advantageously current-dependent faults of the angular values determined during the operation of the motor are corrected. For this purpose, in order to correct the inductivity-based determination of the position of the rotor, in a measuring device either the phase currents are measured or the intermediate circuit current is captured.

Abstract: A measurement device relates to a Halios system for measuring an optical transmission path, in which at least one receiver and a compensation transmitter are optically separated from each other by an optical barrier in such a matter that a direct irradiation of said receiver by said compensation transmitter is not possible. Said compensation transmitter and a transmitter are of the same type and/or have at least a common electric optical working point in an optical working point. Said optical barrier has a compensation path, characterized by a compensation window, which attenuates the light of the compensation transmitter before it hits the receiver in such a manner that the compensation transmitter and said transmitter are operated at least in an optical working point by a controller in said identical electro-optical working point.

Abstract: A receiver compensation system and method to operate the receiver compensation system are disclosed. The compensation sensor system includes at least one receiver and at least one control loop. The method to operate the receiver compensation system is characterized in that the receiver is adjusted in its sensitivity by a control signal such that in the case of changes of an input received by the receiver, a control signal of the control loop resets an associated receiver output signal, except for a control error. Further, at least one other signal of the control loop represents or contains a measurement of the change of the input received by the receiver.

Abstract: The electrical apparatus (10) for transmitting electrical energy in a clocked manner or with clocked transmission of electrical energy is provided with an input (32) and also an output (34) and a docked switch (26) which is connected between the input (32) and the output (34). The apparatus (10) further has a drive unit (28) for docking the switch (26) by pulse-width modulation with a fundamental frequency at which drive pulses (38) follow one another. The pulse-width modulation can be operated by periodic clocking during in each case only one drive pulse group comprising a variable, predefinable number of successive drive pulses (38) or drive intervals and therefore at a subharmonic of the fundamental frequency, wherein the minimum permissible minimum number and the maximum permissible maximum number of drive pulses (38) or intervals in the drive pulse group are selected to the exclusion of subharmonics which lie within predefinable subfrequency bands which are below the fundamental frequency.

Abstract: The micro-electromechanical semiconductor component is provided with a first silicon semiconductor substrate having an upper face, into which a cavity delimited by side walls and a floor wall is introduced, and having a second silicon semiconductor substrate comprising a silicon oxide layer and a polysilicon layer applied thereon having a defined thickness. The polysilicon layer of the second silicon semiconductor substrate faces the upper side of the first silicon semiconductor substrate, the two silicon semiconductor substrates are bonded, and the second silicon semiconductor substrate covers the cavity in the first silicon semiconductor substrate. Grooves that extend up to the polysilicon layer are arranged in the second silicon semiconductor substrate in the region of the section thereof that covers the cavity.

Abstract: The method for operating a UWB device having at least one transmitting antenna and/or at least one receiving antenna comprises the following steps: controlling the transmitting antenna (12) or the receiving antenna (12?) with a control pulse signal (13,13?) having a sequence of substantially sinusoidal pulses of alternating polarity and differing amplitudes and particularly having the waveform of a fifth-order Gaussian pulse signal, wherein the transmitting antenna (12) can be alternately supplied with current pulses of differing polarity and differing magnitude by switching on and off first electronic switch units (16) that are coupled to the transmitting antenna (12) and have resistances associated with the amplitudes of the pulses to be generated, wherein each first switch unit (16) has a specifiable, particularly equal, number of first switching transistors (18,19), each having substantially identical on-state resistance values (R), wherein the resistance of a first switch unit is adjusted either by using

Abstract: In a method for producing a micro-electromechanical device in a material substrate, a component element defining the position of an electronic component and/or required for the function of the electronic component is selectively formed on the material substrate from an etching stop material acting as an etching stop in case of etching of the material substrate and/or in case of etching of a material layer disposed on the material substrate. When the component element of the electronic component is implemented, a bounding region is also formed on the material substrate along at least a partial section of an edge of the surface structure, wherein the bounding region bounds the partial section. The material substrate thus implemented is selectively etched for forming the surface structure, in that the edge of the bounding region defines the position of the surface structure to be implemented on the material substrate.

Abstract: A device for measuring a measured optical transmission path includes a first optical transmitter transmitting into the measured optical tramsmission path and a compensation transmitter transmitting into a compensation optical transmission path. The device includes an optical receiver for receiving transmissions from each of the first optical transmitter and the compensation transmitter. A controller controls the compensation transmitter and provides a controller output signal representative of a measured value of the first transmission path. A nose piece separates the optical transmitter from the optical receiver. The compensation transmitter is placed in a first cavity. The receiver is placed in a second cavity. A filter in the measured optical transmission path has a transmissivity for the wavelength of the light of the first optical transmitter of at least 50% and an absorption factor for the wavelength of the light of the compensation transmitter of at least 25%.

Abstract: A micro-electromechanical semiconductor component is provided with a semiconductor substrate, a reversibly deformable bending element made of semiconductor material, and at least one transistor that is sensitive to mechanical stresses. The transistor is designed as an integrated component in the bending element.

Abstract: The micro-electromechanical semiconductor component is provided with a semiconductor substrate in which a cavity is formed, which is delimited by lateral walls and by a top and a bottom wall. In order to form a flexible connection to the region of the semiconductor substrate, the top or bottom wall is provided with trenches around the cavity, and bending webs are formed between said trenches. At least one measuring element that is sensitive to mechanical stresses is formed within at least one of said bending webs. Within the central region surrounded by the trenches, the top or bottom wall comprises a plurality of depressions reducing the mass of the central region and a plurality of stiffening braces separating the depressions.

Abstract: A semiconductor component is provided with a semiconductor substrate, in the upper face of which an active region made of a material of a first conductivity type is introduced by ion implantation. A semiconducting channel region having a defined length and width is designed within the active region. Each of the ends of the channel region located in the longitudinal extension is followed by a contacting region made of a semiconductor material of a second conductivity type. The channel region is covered by an ion implantation masking material, which comprises transverse edges defining the length of the channel region and longitudinal edges defining the width of the channel region and which comprises an edge recess at each of the opposing transverse edges aligned with the longitudinal extension ends of the channel region, the contacting regions that adjoin the channel region extending all the way into said edge recess.

Abstract: In the method for measuring a micromechanical semiconductor component which comprises a reversibly deformable measuring element sensitive to mechanical stresses, which is provided with electronic circuit elements and terminal pads for tapping measurement signals, the measuring element (18) of the semiconductor component (16), for the purpose of determining the distance/force and/or distance/pressure characteristic curve thereof, is increasingly deformed by mechanical action of a plunger (32) which can in particular be advanced step by step. After a or after each step-by-step advancing movement of the plunger (32) by a predetermined distance quantity, the current measurement signals are tapped via the terminal pads (24). The semiconductor component (16) is qualified on the basis of the obtained measurement signals representing the distance/force and/or distance/pressure characteristic curve.