Abstract: The interference-compensated sensor for detecting an object located in a detection area in a contactless manner, particularly a rain sensor, is provided with a first and a second measuring channel each having a control device and an output, wherein both measuring channels are substantially identical. The sensor further comprises a main subtractor having an output for outputting the difference of the signals at the outputs of the measuring channels. The sensor is provided with a controller unit having an input that is connected to the output of the main subtractor and with an output for outputting a controller signal, by means of which the two measuring channels can be controlled in such a way that the signal at the output of the main subtractor can be controlled to zero. By means of the magnitude of the signal at the output of the controller, it can be determined if an object is located in the detection area.

Abstract: The micro-electromechanical device has a substrate. Integrated into the substrate is a micromechanical component that has a bending element which can be bent reversibly and which has a first end connected to the substrate and extends from the first end over a free space. The bending element has at least one web having two side edges, the course of which is defined by depressions introduced into the bending element and adjacent to the side edges. In order to form a homogenization region located within the web, in which mechanical stresses occurring during bending of the bending element are substantially equal, the mutual spacing of the side edges of the web decreases, as viewed from the first end of the bending element. The device further comprises at least one microelectronic component that is sensitive to mechanical stresses and embedded in the web in the homogenization region of the latter.

Abstract: A method for the switching of participants of a bus system from a first state with reduced energy consumption to a second state with increased energy consumption relative to the first state, wherein, for communication between the participants of the bus system, data frames are transmitted which comprise, inter alia, a message identification field (e.g. CAN message) and a useful-data field (e.g. CAN payload), wherein, according to said method, each participant, for switching from the first state to the second state, reacts on data frames with respectively predetermined data contents in the message identification field as well as in the useful-data field. Further, in the bus system, for selective switching of a participant from the first state to the second state, those data frames will be transmitted on whose message-identification-field contents and useful data-field-contents the selectively addressable participant reacts.

Abstract: The micro-electromechanical semiconductor component is provided with a first semiconductor substrate, which has an upper face, and a second semiconductor substrate, which has an upper face. Both semiconductor substrates are bonded resting on the upper faces thereof. A cavity is introduced into the upper face of at least one of the two semiconductor substrates. The cavity is defined by lateral walls and opposing top and bottom walls, which are formed by the two semiconductor substrates. The top or the bottom wall acts as a reversibly deformable membrane and an opening extending through the respective semiconductor substrate is arranged in the other of said two walls of the cavity.

Abstract: A method for detecting blockages of unipolar stepper motors by analyzing the motor current supply, comprising impressing a current into one or more motor windings using a controllable switch, wherein the switch selectively connects a respective motor winding connection to a supply voltage connection and wherein the connections of each motor winding lying at a common potential are permanently connected to a second supply voltage connection, wherein a current feed variant has phases between the switching of the motor windings, in which phases the motor winding connections are switched with high resistance; detecting the voltage at a motor winding connection at least for the high-resistance phase and comparing the voltage to a threshold; detecting a time interval for which the voltage is greater than the threshold; comparing interval lengths for several motor winding connections, and detecting a blockage based on the comparisons of interval lengths.

Abstract: The device for ambient light compensation for use in optical sensors exposed to both useful light and ambient light comprises at least one first photodiode and at least one second photodiode, the at least one first photodiode being adapted to be exposed to substantially the same useful light and ambient light as the at least one second photodiode. The device further comprises a current mirror circuit having an input and an output, the at least one first photodiode being connected to the input of the current mirror circuit, and the at least one second photodiode being connected to the output of the current mirror circuit. The current mirror circuit comprises a lowpass filter connected between the input and the output of the current mirror circuit. The output of the current mirror circuit provides an output signal representing the useful signal compensated for ambient light.

Abstract: A receiver compensation system and method to operate the receiver compensation system are disclosed. The compensation sensor system includes at least one receiver and at least one control loop. The method to operate the receiver compensation system is characterized in that the receiver is adjusted in its sensitivity by a control signal such that in the case of changes of an input received by the receiver, a control signal of the control loop resets an associated receiver output signal, except for a control error. Further, at least one other signal of the control loop represents or contains a measurement of the change of the input received by the receiver.

Abstract: Pressure-sensitive amplifier stage comprising four unipolar pressure-sensor transistors each including a piezoresistive current path. The pressure-sensor transistors are connected as a pressure-measuring bridge having two bridge legs each comprising first and second pressure-sensor transistors which are connected in series. Two unipolar control transistors each has a control terminal and a current path arranged between a further first and a further second terminal. The respective first and second terminals of the two control transistors are connected in pairs, and the control terminals each is connected to a node between the pressure-sensor transistors. The interconnected second terminals are connected to the control terminals of the second pressure-sensor transistors of the two bridge legs.

Abstract: The microelectromechanical component has a semiconductor substrate (1), which has a cavity (2a) formed in the semiconductor substrate. The cavity is covered by a reversibly deformable membrane (2). A sensor (17) for detecting a deformation of the membrane (2) is formed within the region of the membrane (2). A test actuator (28, 29, 30) for deforming the membrane (2) for testing purposes is also arranged within the region of the membrane (2). Finally, the microelectromechanical component has an evaluation and activation unit (41) connected to the sensor (17) and the test actuator (28, 29, 30) for activating the test actuator (28, 29, 30) in order to deform the membrane (2) as a test and for evaluating a measurement signal of the sensor (17) as a sensor detection of a deformation of the membrane (2) as a result of the activation of the test actuator (28, 29, 30).

Abstract: A digital optimal filter having an especially sinusoidal pulse response uses a filter structure with a recursive and a transversal portion. The transversal portion comprises filter coefficients for the representation of scan results of half a period of the sinusoidal pulse response signal. The recursive filter structure is used to change the sign after generation of the scan results for half a period and to mark the start and the end of the pulse response. A plurality of periods can lie in between the start and the end of the pulse response, this is why the digital optimal filter can be used to extract especially sinusoidal burst signals from an original signal, namely in digital technology, which is advantageous for the implementation of IC's.

Abstract: The invention relates to a method for checking a pressure sensor comprising a reversibly deformable, in particular reversibly bendable measuring element (18) which supplies a measurement signal having a value depending on the degree of deformation of said measuring element, to the effect of whether the pressure sensor withstands a required maximum pressure which is larger by a predeterminable factor than a nominal pressure for which the sensor is designed.

Abstract: In the method for measuring a micromechanical semiconductor component which comprises a reversibly deformable measuring element sensitive to mechanical stresses, which is provided with electronic circuit elements and terminal pads for tapping measurement signals, the measuring element (18) of the semiconductor component (16), for the purpose of determining the distance/force and/or distance/pressure characteristic curve thereof, is increasingly deformed by mechanical action of a plunger (32) which can in particular be advanced step by step. After a or after each step-by-step advancing movement of the plunger (32) by a predetermined distance quantity, the current measurement signals are tapped via the terminal pads (24). The semiconductor component (16) is qualified on the basis of the obtained measurement signals representing the distance/force and/or distance/pressure characteristic curve.

Abstract: In an inductive position sensor for determining the position, particularly the rotation angle, of a movable element, at least two subsystems are provided, which each have second transmitting units with an actuating unit, an oscillating circuit on the movable element, and a receiving unit with an evaluating unit. According to the invention, it is provided that the operation of the individual subsystems is carried out alternately. Thus, if one subsystem is operating, all other subsystems are deactivated. In this way, all subsystems are individually operated in a consecutive manner. The synchronization required to do so is provided by a non-galvanic coupling of the subsystems, and in particular by an inductive coupling by way of preferably existing inductances of the subsystems.

Abstract: A micro-electromechanical semiconductor component is provided with a semiconductor substrate, a reversibly deformable bending element made of semiconductor material, and at least one transistor that is sensitive to mechanical stresses. The transistor is designed as an integrated component in the bending element.

Abstract: The micro-electromechanical semiconductor component is provided with a first semiconductor substrate, which has an upper face, and a second semiconductor substrate, which has an upper face. Both semiconductor substrates are bonded resting on the upper faces thereof. A cavity is introduced into the upper face of at least one of the two semiconductor substrates. The cavity is defined by lateral walls and opposing top and bottom walls, which are formed by the two semiconductor substrates. The top or the bottom wall acts as a reversibly deformable membrane and an opening extending through the respective semiconductor substrate is arranged in the other of said two walls of the cavity.

Abstract: The micro-electromechanical device has a substrate. Integrated into the substrate is a micromechanical component that has a bending element which can be bent reversibly and which has a first end connected to the substrate and extends from the first end over a free space. The bending element has at least one web having two side edges, the course of which is defined by depressions introduced into the bending element and adjacent to the side edges. In order to form a homogenization region located within the web, in which mechanical stresses occurring during bending of the bending element are substantially equal, the mutual spacing of the side edges of the web decreases, as viewed from the first end of the bending element. The device further comprises at least one microelectronic component that is sensitive to mechanical stresses and embedded in the web in the homogenization region of the latter.

Abstract: The solid-state diode comprises a semiconductor substrate having a top side and having two masking regions formed on the top side of the semiconductor substrate and made of a first masking material impermeable to ion implantation, the masking regions comprising two mutually opposite limiting edge portions. The solid-state diode comprises an n-doped cathode region formed in the semiconductor substrate and extending up into the intermediate region between the mutually opposite limiting edge portions of the masking regions, the n-doped cathode region comprising a cathode connection field. The diode comprises a p-doped anode region formed in the semiconductor substrate, extending up into the intermediate region between the mutually opposite limiting edge portions of the masking regions and bordering/overlapping on the cathode region, the p-doped anode region comprising an anode connection field.

Abstract: In a method for producing a micro-electromechanical device in a material substrate, component element defining the position of an electronic component and/or required for the function of the electronic component is selectively formed on the material substrate from an etching stop material acting as an etching stop in case of etching of the material substrate and/or in case of etching of a material layer disposed on the material substrate. When the component element of the electronic component is implemented, a bounding region is also formed on the material substrate along at least a partial section of an edge of the surface structure, wherein the bounding region bounds the partial section. The material substrate thus implemented is selectively etched for forming the surface structure, in that the edge of the bounding region defines the position of the surface structure to be implemented on the material substrate.

Abstract: The micro-electromechanical semiconductor component is provided with a first silicon semiconductor substrate having an upper face, into which a cavity delimited by side walls and a floor wall is introduced, and having a second silicon semiconductor substrate comprising a silicon oxide layer and a polysilicon layer applied thereon having a defined thickness. The polysilicon layer of the second silicon semiconductor substrate faces the upper side of the first silicon semiconductor substrate, the two silicon semiconductor substrates are bonded, and the second silicon semiconductor substrate covers the cavity in the first silicon semiconductor substrate. Grooves that extend up to the polysilicon layer are arranged in the second silicon semiconductor substrate in the region of the section thereof that covers the cavity.

Abstract: The micro-electromechanical semiconductor component is provided with a semiconductor substrate in which a cavity is formed, which is delimited by lateral walls and by a top and a bottom wall. In order to form a flexible connection to the region of the semiconductor substrate, the top or bottom wall is provided with trenches around the cavity, and bending webs are formed between said trenches. At least one measuring element that is sensitive to mechanical stresses is formed within at least one of said bending webs. Within the central region surrounded by the trenches, the top or bottom wall comprises a plurality of depressions reducing the mass of the central region and a plurality of stiffening braces separating the depressions.