Abstract: A solar cell array includes multiple cells connected to one another in series on a surface. The array includes first and second different types of solar cells. Incorporating two different types of cells can facilitate various layouts of the cells in the array, including compact arrangements. In some implementations, the use of two different types of cells can allow arrangements in which voltage terminals of opposite polarity to be disposed at a sufficiently large distance from one another so as to help reduce the occurrence of ESD.

Abstract: A method of fabricating both a multijunction solar cell and an inverted metamorphic multijunction solar cell in a single process using a MOCVD reactor by forming a first multijunction solar cell on a semiconductor substrate; forming a release layer over the first solar cell; forming an inverted metamorphic second solar cell over the release layer; and etching the release layer so as to separate the multijunction first solar cell and the inverted metamorphic second solar cell.

Abstract: A method of forming a multijunction solar cell comprising at least an upper subcell, a middle subcell, and a lower subcell, the method including forming a first alpha layer over said middle solar subcell using a surfactant and dopant including selenium, the first alpha layer configured to prevent threading dislocations from propagating; forming a metamorphic grading interlayer over and directly adjacent to said first alpha layer; forming a second alpha layer using a surfactant and dopant including selenium over and directly adjacent to said grading interlayer to prevent threading dislocations from propagating; and forming a lower solar subcell over said grading interlayer such that said lower solar subcell is lattice mismatched with respect to said middle solar subcell.

Abstract: A multijunction solar cell including a contact layer with sulfur passivation on the surface of the contact layer adjacent to the window layer overlying the top subcell of the solar cell. The passivation is performed by application of a solution of ammonium sulphide.

Abstract: The present disclosure provides a method of manufacturing a solar cell including: providing a first substrate and a second substrate; depositing on the first substrate a sequence of layers of semiconductor material forming a solar cell including a top subcell and a bottom subcell; forming a back metal contact over the bottom subcell; applying a conductive polyimide adhesive to the second substrate; attaching the second substrate on top of the back metal contact; and removing the first substrate to expose the surface of the top subcell.

Abstract: An inverted metamorphic multijunction solar cell including a contact layer with sulfur passivation on the surface of the contact layer.

Abstract: A multijunction solar cell including a window layer with sulfur passivation on the surface of the window layer adjacent to the contact layer overlying the top subcell of the solar cell. The passivation is performed by application of a solution of ammonium sulphide.

Abstract: An inverted metamorphic multijunction solar cell including a window layer with sulfur passivation on the surface of the window layer of the top solar subcell.

Abstract: A multijunction solar cell including an upper first solar subcell; a second solar subcell adjacent to the first solar subcell; a first graded interlayer adjacent to the second solar subcell; a third solar subcell adjacent to the first graded interlayer such that the third subcell is lattice mismatched with respect to the second subcell. A second graded interlayer is provided adjacent to the third solar subcell, and a lower fourth solar subcell is provided adjacent to the second graded interlayer, such that the fourth subcell is lattice mismatched with respect to the third subcell. An encapsulating layer composed of silicon nitride or titanium oxide disposed on the top surface of the solar cell, and an antireflection coating layer disposed over the encapsulating layer.

Abstract: Inverted metamorphic multijunction solar cells having a heterojunction middle subcell and a graded interlayer, and methods of making same, are disclosed herein. The present disclosure provides a method of manufacturing a solar cell using an MOCVD process, wherein the graded interlayer is composed of (InxGa1-x)yAl1-yAs, and is formed in the MOCVD reactor so that it is compositionally graded to lattice match the middle second subcell on one side and the lower third subcell on the other side, with the values for x and y computed and the composition of the graded interlayer determined so that as the layer is grown in the MOCVD reactor, the band gap of the graded interlayer remains constant at 1.5 eV throughout the thickness of the graded interlayer.

Abstract: A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell by providing a substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a graded interlayer over the second subcell, the graded interlayer having a third band gap greater than the second band gap; forming a third solar subcell over the graded interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell; and forming a contact composed of a sequence of layers over the first subcell at a temperature of 280° C. or less and having a contact resistance of less than 5×10?4 ohms-cm2.

Abstract: Methods of fabricating multijunction solar cells that may include providing a substrate, and depositing a nucleation first layer over and directly in contact with the substrate. The methods may also include depositing a second layer containing an arsenic dopant over the nucleation layer. The nucleation layer may serve as a diffusion barrier to the arsenic dopant such that diffusion of the arsenic dopant into the substrate is limited in depth by the nucleation layer. The methods may also include depositing a sequence of layers over the second layer forming at least one solar subcell.

Abstract: A system for generating electrical power from solar radiation utilizing a thin film III-V compound multijunction semiconductor solar cell mounted on a support in a non-planar configuration is disclosed herein.

Abstract: A method of forming a solar cell including: providing a semiconductor body including at least one photoactive junction; forming a semiconductor contact layer composed of GaAs deposited over the semiconductor body; and depositing a metal contact layer including a germanium layer and a palladium layer over the semiconductor contact layer so that the specific contact resistance is less than 5×10?4 ohms-cm2.

Abstract: A method of manufacturing a mounted solar cell by providing a first substrate; depositing on the first substrate a sequence of layers of semiconductor material to form a multijunction solar cell using an MOCVD process; depositing a metal electrode layer on its surface of the layers of semiconductor material; attaching a metallic flexible film comprising a nickel-cobalt ferrous alloy material, or a nickel iron alloy material, directly to the surface of the metal electrode layer of the semiconductor solar cell. The first substrate is removed, and an electrical interconnection member is attached to the solar cell.

Abstract: A solar cell interconnect assembly and a method for manufacturing the same are provided. In an embodiment, the method may include: providing a solar cell having an interconnect member formed thereon, the interconnect member comprising a metallic part formed on a surface of the solar cell and a first precursor layer formed over the metallic part; providing an interconnector comprising a second precursor layer at a surface thereof; heating the interconnector and the interconnect member to a temperature equal to or above a eutectic temperature of the materials of the first and second precursor layers and pressing one of them against the other so as to form a eutectic liquid phase; and isothermal solidifying the eutectic liquid to form a bonding layer of eutectic alloy.

Abstract: A system for generating electrical power from solar radiation utilizing a thin film III-V compound multijunction semiconductor solar cell mounted on a support in a non-planar configuration is disclosed herein.

Abstract: A solar cell assembly, a solar cell array, and a method for manufacturing the same are provided. The solar cell assembly may include a solar cell and an interconnection member, the interconnection member comprising a first portion and a second portion attached to the first portion with an angle formed therebetween. The solar cell array may comprise at least two said solar cell assemblies. In an embodiment, the top surfaces of the first solar cell and the second solar cell are arranged such that the second portion of the first interconnect member and the second portion of the second interconnection member are adjacent to each other, and at least the end portion of the second portion of the first interconnection member is bended together with at least the end portion of the second portion of the second interconnection member.

Abstract: A multijunction solar cell including a first solar subcell having a first band gap and a first short-circuit current; a second solar subcell disposed over the first solar subcell and having a second band gap greater than the first band gap and a second short-circuit current greater than the first short-circuit current by an amount in the range of 2% to 6%; a third solar subcell disposed over the second solar subcell and having a third band gap greater than the second band gap and a third short-circuit current less than the first short-circuit current by an amount in the range of 2% to 6%; and a fourth solar subcell disposed over the third solar subcell having a fourth band gap greater than the third band gap, and a fourth short-circuit current less than the third short-circuit current by an amount in the range of 6% to 10%, so that at an “end of life” state of the multijunction solar cell in an AM0 space environment the short-circuit current of each of the subcells are substantially identical.