Abstract: A plasma source which is capable of supplying a plasma processing space with plasma in a state where gas is sufficiently ionized is a device for supplying plasma to a plasma processing space in which a process using the plasma is performed, and includes: a plasma generation chamber; an opening that allows the plasma generation chamber to communicate with the plasma processing space; a radio-frequency antenna that is a coil of less than one turn provided in a position where a radio-frequency electromagnetic field having predetermined strength required to generate plasma is able to be generated in the plasma generation chamber; voltage application electrodes in a position close to the opening in the plasma generation chamber; and a gas supply unit (pipe) that supplies plasma source gas to a position closer to the side opposite to the opening than the voltage application electrodes in the plasma generation chamber.

Abstract: The present invention relates to a magnetic sensor with a sensitivity measuring function and a method thereof. Magnetic sensitivity surfaces detect flux density, and a switching unit extracts magnetic field intensity information of each axis, and inputs it to a sensitivity calculating unit. The sensitivity calculating unit calculates the sensitivity from the magnetic field intensity information about the individual axes from the magnetic sensitivity surfaces. The sensitivity calculating unit includes an axial component analyzing unit for analyzing the flux density from the magnetic sensitivity surfaces into magnetic components of the individual axes; a sensitivity decision unit for deciding the sensitivity by comparing the individual axial components of the magnetic field intensity from the axial component analyzing unit with a reference value; and a sensitivity correction unit for carrying out sensitivity correction in accordance with the sensitivity information from the sensitivity decision unit.

Abstract: The present invention aims at providing a plasma processing apparatus for performing a plasma processing on a planar substrate body to be processed, the apparatus being capable of generating the plasma with good uniformity and efficiently using the plasma, and having a high productivity. That is, the plasma processing apparatus according to the present invention includes: a vacuum chamber; one or plural antenna supporters (plasma generator supporters) projecting into the internal space of the vacuum chamber; radio-frequency antennas (plasma generators) attached to each antenna supporter; and a pair of substrate body holders provided across the antenna supporter in the vacuum chamber, for holding a planar substrate body to be processed.

Abstract: A flange, which forms a portion of a vacuum container, has a rectangular opening surrounded by an insulating frame. A plate-shaped radio-frequency antenna conductor 13 is provided so as to cover the opening, with the insulating frame clamped thereby. In this structure, a radio-frequency power source is connected via a matching box to one end along the length of the radio-frequency antenna conductor, the other end is connected to ground, and electric power is supplied so that a radio-frequency current flows from one end of the radio-frequency antenna conductor to the other. By this method, the impedance of the radio-frequency antenna conductor can be lowered, and high-density plasma with a low electron temperature can be efficiently generated.

Abstract: A thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system includes: a vacuum container; a target holder located inside the vacuum container; a target holder located inside the vacuum container; a substrate holder opposed to the target holder; a power source for applying a voltage between the target holder and the substrate holder; a magnetron-sputtering magnet provided behind the target holder, for generating a magnetic field having a component parallel to a target; and radio-frequency antennae for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target where the magnetic field generated by the magnetron-sputtering magnet has a strength equal to or higher than a predetermined level.

Abstract: A method for manufacturing the compound semiconductor substrate having a reduced dislocation density at an interface between a Si substrate. Contaminants, such as organic matter and metal, on a surface of a Si substrate are removed whereby a flat oxide film is formed. The oxide film on the surface is removed by using an aqueous hydrogen fluoride solution, whereby hydrogen termination treatment is performed. Immediately after being subjected to the hydrogen termination treatment the temperature of the Si substrate is raised in a vacuum apparatus. If the substrate temperature is raised without any operation, the termination hydrogen is released. Before the hydrogen is released, pre-irradiation with As is performed. Thus, an interface between the Si substrate and the compound semiconductor layer is prepared. Several minutes later, irradiation with Ga and As is performed. Thereby, the compound semiconductor is formed.

Abstract: The present invention relates to a compound semiconductor lamination that enables an InSb film to be formed on an Si substrate and enables development of applications to magnetic sensors, such as Hall elements, magneto-resistance elements, etc., optical devices, such as infrared sensors, etc., and electronic devices, such as transistors, etc., to be provided industrially, and a method for manufacturing the compound semiconductor lamination. An active layer, which is a compound semiconductor that does not contain As, is directly formed on an Si substrate. As is present at an interface of the active layer and a single crystal layer of the Si substrate. The compound semiconductor contains at least nitrogen. The compound semiconductor is a single crystal thin film. The Si substrate is a bulk single crystal substrate or a thin film substrate with an uppermost layer being Si.

Abstract: In a motor control circuit which controls energization of a coil on the basis of a detection result of a rotor position, control is performed so that continuous rotation of the rotor by inertia is suppressed, rotation is stopped quickly, and reverse rotation of the rotor is prevented. When an external control signal CTL is changed from L to H, the normal rotation control is switched to reverse rotation control, and a reverse brake state is effected. When motor rotation speed is monitored and reduced to a set rotation speed, a brake control signal SPSB is changed from L to H, and a short brake state is effected. However, the motor continues to be rotated by its own inertia, and a position detection signal HALL is changed. Thus, reverse brake control is temporarily performed (only during a time period corresponding to a pulse width TRB). The short pulse reverse brake control is intermittently performed until the motor is completely stopped.

Abstract: An infrared sensor capable of more highly accurately correcting an electrical signal converted by a light receiving unit is provided. An infrared sensor (100) converts energy of infrared rays radiated from an object (for example, human body) to an electrical signal and outputs the electrical signal, the infrared sensor comprising: a light receiving unit (10) that includes a quantum type infrared detection element (11) and that converts the energy of the infrared rays to an electrical signal; and a correction unit (20) that corrects the output signal from the light receiving unit (10), wherein the light receiving unit (10) and the correction unit (20) are formed of the identical material on the identical substrate (1) and have the identical configuration so that the infrared rays enters in an identical manner.

Abstract: This invention provides an electroconductive particle placement sheet comprising electroconductive particles and an insulating resin sheet. The thickness of the insulating resin sheet is smaller than the average particle diameter of the electroconductive particles. Electroconductive particles are protruded from the reference plane (P1) on at least one side of the insulating resin sheet. The electroconductive particle in is part protruded from the reference plane (P1) is covered with a layer formed of the same resin as in the insulating resin sheet.

Abstract: There is provided a conductive filler with high heat resistance which can be melt-bonded under reflow heat treatment conditions for a lead-free solder and, after the bonding, does not melt under the same heat treatment conditions. The conductive filler is characterized in that, as measured by differential scanning calorimetry, it has at least one metastable metal alloy phase observed as an exothermic peak and has at least one melting point observed as an endothermic peak in each of the 210 to 240° C. range and the 300 to 450° C. range, and that the filler, upon heat treatment at 246° C., gives a bonded object which has, as measured by differential scanning calorimetry, no melting point observed as an endothermic peak in the 210 to 240° C. range or has a melting endotherm calculated from an endothermic peak area in the 210 to 240° C. range, the melting endotherm being 90% or less of the melting endotherm of the filler before bonding calculated from an endothermic peak area in the 210 to 240° C. range.

Abstract: The present invention relates to a magnetic sensor with which magnetic characteristics are made extremely stable by consideration of an area of contact of a base layer of a magnetic substance and a semiconductor substrate. On a semiconductor substrate (111) a plurality of Hall elements (112a, 112b) are embedded so as to be coplanar to a top surface of the semiconductor substrate while being mutually spaced apart by a predetermined distance, and above the Hall elements and the semiconductor substrate, a base layer (114), having coefficient of thermal expansion differing from that of the Hall elements and partially covers a region of each Hall elements, is formed via a protective layer (113), and a magnetic flux concentrator (115), having an area larger than the base layer and with magnetic amplification, is formed on the base layer. An area of contact of the base layer of the magnetic substance and the semiconductor substrate is made small to lessen the generation of an offset voltage.

Abstract: The present invention relates to a physical quantity measuring instrument and signal processing method thereof capable of reducing noise components and improving reliability without increasing size or cost of the circuit. A physical quantity detecting unit (11) has signal detecting components for detecting a plurality of signals based on a desired physical quantity and detects the desired physical quantity. A signal processing unit (12) executes signal processing of the signals detected on the individual detecting axes by the physical quantity detecting unit (11) for linearly combining the signals in different combinations with time. An arithmetic processing unit (13) combines and calculates a plurality of signals based on the physical quantity associated with the physical quantity detecting unit (11) from the signal data output by the signal processing unit (12).

Abstract: A microphase-separated structure comprising a block copolymer, which contains at least a block chain A consisting of a monomer A as a repeating unit and a block chain B consisting of a monomer B as a repeating unit, and a solvent, wherein the solvent has a temperature zone 1 where the block chain A and the block chain B are soluble and a temperature zone 2 where the block chain A is insoluble but the block chain B is soluble, and a structural period thereof varies by changing temperature between the temperature zone 1 and the temperature zone 2.

Abstract: A method for manufacturing an anisotropic conductive adhesive sheet is disclosed. The sheet comprises at least a curing agent, a curable insulating resin, and conductive particles. The method comprises providing an adhesive layer on a biaxially stretchable film to form a laminate, densely packing conductive particles having an average particle size of 1 to 8 ?m on the laminate to form a conductive particle-attached film, biaxially stretching and holding the conductive particle-attached film so that the average particle distance between adjacent conductive particles is at least one to five times or less the average particle size of the conductive particles and not greater than 20 ?m. The conductive particles are transferred to an adhesive sheet containing at least a curing agent and a curable insulating resin and having a thickness of at least 1.5 times the average particle distance between the conductive particles but not greater than 40 ?m.

Abstract: A Hall element is provided which has a high sensitivity and contributes to an improvement in S/N ratio per current by using a low-concentration n-well within a suitable range. The Hall element includes a p-type semiconductor substrate layer of p-type silicon, and an n-type impurity region located in a surface of the p-type semiconductor substrate layer, the n-type impurity region functioning as a magnetic sensing part. A p-type impurity region is located in a surface of the n-type impurity region, and n-type regions are located laterally of the p-type impurity region. A p-type substrate region having a resistivity equal to that of the p-type semiconductor substrate layer is located to extend around the n-type impurity region. An impurity concentration N in the n-type impurity region functioning as the magnetic sensing part is preferably from 1×1016 to 3×1016(atoms/cm3) and a distribution depth of the impurity concentration is preferably from 3.0 ?m to 5.0 ?m.

Abstract: A pointing device is provided which can reduce its size and height, reduce leakage magnetic flux density to the outside. Magnetic sensors are disposed symmetrically two by two on X and Y axes on a printed circuit board. A silicone resin is placed on the printed circuit board, and an internally and externally unipolarly magnetized ring-like magnet is placed near the center of the magnetic sensors. The printed circuit board and silicone resin are not bonded. The silicone resin is easily deformed by applying external force, and returns to its initial state without the external force as soon as the external force is removed. The ring-like magnet is configured to move approximately in parallel to the surface of the printed circuit board. The variations in the ambient magnetic flux density produced by the movement of the ring-like magnet are detected by the magnetic sensors.

Abstract: The present invention relates to a traveling direction measuring apparatus usable as a pedestrian navigation system in locations where it is difficult to obtain high positioning accuracy such as inside buildings or around multistory buildings where a GPS cannot be used. An acceleration detecting section (1) detects 3-axes acceleration of the traveling direction measuring apparatus, which varies with the walking of the pedestrian. An acceleration data acquiring section (2) obtains 3-axes acceleration data repeatedly by the number of prescribed times or more, said 3-axes acceleration data varies with the walking of the pedestrian. A first gravity acceleration calculating section (3) calculates, when the pedestrian is walking with holding the traveling direction measuring apparatus in a generally fixed attitude, gravity acceleration by averaging acceleration data sets during several steps obtained by the acceleration data acquiring section (2).

Abstract: A thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system includes: a vacuum container; a target holder located inside the vacuum container; a target holder located inside the vacuum container; a substrate holder opposed to the target holder; a power source for applying a voltage between the target holder and the substrate holder: a magnetron-sputtering magnet provided behind the target holder, for generating a magnetic field having a component parallel to a target; and radio-frequency antennae for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target where the magnetic field generated by the magnetron sputtering magnet has a strength equal to or higher than a predetermined level.

Abstract: There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber (1) provided with a silicon sputter target (e.g., target 30), or the hydrogen gas and the silane-containing gas are supplied into the chamber (1) without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/H?) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity H? of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.