Abstract: Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon dioxide or silicon nitride.

Abstract: Methods of manufacture and memory cells manufactured according to the methods are described. The manufacture has a lower thermal budget and experiences less heating by including a blocking layer including MgO. The method of manufacture may include annealing following deposition of the MgO, with the annealing occurring at temperatures below 900° C. or below 800° C. The blocking layers may be a first blocking layer made of SiO2 and a second blocking layer made of MgO. The memory cells may have a CMOS Under Array (CuA) structure. The memory cells may be part of a three-dimensional NAND memory device.

Abstract: The invention provides a facile process for preparing various Group VI precursor compounds useful in the vapor deposition of such Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. The process provides an effective means to obtain such volatile materials, which can then be sources of molybdenum, chromium, or tungsten-containing materials to be deposited on such substrates. Additionally, the invention provides a method for vapor deposition of such compounds onto microelectronic device substrates.

Abstract: Some embodiments relate to precursor delivery systems for producing gas precursors. The precursor delivery system may include one or more precursor supply packages containing a solid precursor material. The one or more precursor supply packages may be configured to heat the solid precursor material to a temperature sufficient to result in thermal decomposition of the solid precursor material. The thermal decomposition of the solid precursor material may produce a gas precursor. The gas precursor may be supplied to a gas precursor-utilizing process. Further embodiments relate to precursor supply packages and related methods.

Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.

Abstract: Provided is a chemical-mechanical polishing composition comprising an abrasive, a basic component, at least one compound selected from the group consisting of a quaternary polyammonium salt, a quaternary ammonium salt having 6 or more carbon atoms, and an alkylated polymer having an amide structure, and an aqueous carrier; a rinse composition comprising the at least one compound and an aqueous carrier, as well as a method of chemically-mechanically polishing a substrate, and a method of rinsing a substrate, in which the respective compositions are used.

Abstract: A handle for a wafer carrier that includes an insertable member configured to be inserted into an aperture of the wafer carrier, and a locking mechanism moveable relative to the insertable member. A tab of the insertable member retains the insertable member in the aperture when in an engaged state. When in a locked state, the locking mechanism maintains the tab in the engaged state and a flexible member of the locking mechanism is positioned to maintain the locking mechanism in the locked state. A wafer carrier includes the detachable handle and the locking mechanism.

Abstract: Reticle containers include a rotating latch including a spring. The spring provides force bringing the segments of the reticle container towards one another such that a reticle in the container is clamped between the container segments. The rotating latch can include a head as part of an assembly on one of a cover or a baseplate of the reticle container, with a slot configured to accommodate the head provided on the other of the cover or baseplate. The head can be disposed at an end of a shaft, with the shaft connected to a base, which is contacted by spring providing force such that the contact of the head with the other of the cover or baseplate provides clamping force to a reticle stored between the cover and baseplate.

Abstract: Large format polymeric containers formed by injection molding include a main body having internal surfaces of high density and smoothness that define the internal space. The large format containers can include external features such as reinforcement ribs that are formed integrally with the container body, the reinforcement ribs having greater thicknesses than other portions of the walls of the container. The internal surfaces can include rounded corners and sloping towards a center of the container. Methods of manufacturing the large format polymeric containers include forming the polymeric main body using injection molding. The polymeric main body can be formed of multiple injection molded parts that are joined, or formed as a single piece. The injection molding can include applying between approximately 700 bar and approximately 1100 bar of pressure where at least a portion of the internal surface contacts a mold surface.

Abstract: Described are methods, devices, and systems useful for adsorbing organometallic vapor onto solid adsorbent material to remove the organometallic vapor from a gas mixture that contains the organometallic vapor and other vapor, particulate materials, or both.

Abstract: The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C?CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.

Abstract: The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precusors to form films.

Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

Abstract: Described are storage and dispensing systems and related methods, for the selective dispensing germane (GeH4) as a reagent gas from a vessel in which the germane is held in sorptive relationship to a solid adsorbent medium that includes a zeolitic imidazolate framework.

Abstract: An equipment front end module. An equipment front end module (EFEM) includes a flow modification feature projecting away from an interior wall of the equipment front end module and extending into an interior of the equipment front end module (EFEM) at an angle. The flow modification feature modifies the flow of gas flowing from a top to a bottom of the EFEM by deflecting gas flow away and/or laminarizing gas flow across an opening of the EFEM, which may improve the purge performance of a wafer carrier docked at the EFEM.

Abstract: The disclosure describes a porous membrane including the following: at least one polymeric feature on a surface of a porous membrane wherein the at least one polymeric features are bonded to the membrane using a nanoscale injecting molding device. Another aspect of the disclosure includes a porous membrane including the following: a first film layer; a second film layer; at least one polymeric feature between the first film layer and second film layer, wherein the at least one polymeric feature is bonded to at least the first film layer.

Abstract: Described are ion-exchange membranes that include a porous polymeric membrane and imidazole ion-exchange groups at surfaces of the membrane; ion-exchange membranes and filters that contain the ion-exchange membranes; and methods of using the ion-exchange membranes and filters for separating charged biological molecule from a liquid.

Abstract: The invention provides a facile process for preparing various Group VI precursor compounds, set forth below as Formula (I), useful in the vapor deposition of certain Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. Also provided is a process for the preparation of such precursor compounds. Additionally, the invention provides a method for vapor deposition of Group VI metals onto microelectronic device substrates utilizing the precursor compounds of the invention.