Abstract: The invention provides certain mixed Sn (II) amide/alkoxide precursor compounds. These compounds are useful in precursor compositions in the vapor deposition of tin-containing films such as tin oxide films onto a surface of a microelectronic device. These precursor compounds are useful in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing when paired with certain counter-reactants in a vapor deposition process. In this process, the resulting organotin polymeric surface is thus EUV-patternable insofar as when exposed to a patterned beam of EUV light, exposed portions are subjected to further reaction, thus creating regions which are chemically and physically different; this difference enables further processing and lithography of exposed regions and/or non-exposed regions and lithography in pursuit of the ultimate fabricated microelectronic device.

Abstract: The invention provides compositions useful in the etching of polysilicon in the presence of silicon oxide and silicon nitride. The compositions comprise choline hydroxide, an oxidizing agent such as periodic acid, and optionally a surfactant, and are useful in the etching of polysilicon in general, and in particular in both the operation of polysilicon trim as well as polysilicon exhume. The utilization of an added oxidizing agent was found to reduce selectivity of silicon etching based on the silicon crystal orientation, which was found to reduce roughness and the presence of residual silicon residues, such as silicon (111) residues after the etching step.

Abstract: Precursors useful in the formation of tin-containing films are provided. The precursors comprise a functionalized tin compound in which one or more ligands are coordinated to Sn, and the Sn is functionalized with at least one functional group. Methods for forming the precursors and methods for forming tin-containing films using the precursors are further provided.

Abstract: The invention provides a process for preparing molybdenum and tungsten oxyhalide compounds which are useful in the deposition of molybdenum and tungsten containing films on various surfaces of microelectronic devices. In the process of the invention, a molybdenum or tungsten trioxide is heated in either a solid state medium or in a melt-phase reaction comprising a eutectic blend comprising alkaline and/or alkaline earth metal salts. The molybdenum or tungsten oxyhalides thus formed may be isolated as a vapor and crystallized to provide highly pure precursor compounds such as MoO2Cl2.

Abstract: The use of selective deposition of silicon nitride can eliminate conventional patterning steps by allowing silicon nitride to be deposited only in selected and desired areas. Using a silicon iodide precursor alternately with a thermal nitrogen source in an ALD or pulsed CVD mode, silicon nitride can be deposited preferentially on a surface such as silicon nitride, silicon dioxide, germanium oxide, SiCO, SiOF, silicon carbide, silicon oxynitride, and low k substrates, while exhibiting very little deposition on exposed surfaces such as titanium nitride, tantalum nitride, aluminum nitride, hafnium oxide, zirconium oxide, aluminum oxide, titanium oxide, tantalum oxide, niobium oxide, lanthanum oxide, yttrium oxide, magnesium oxide, calcium oxide, and strontium oxide.

Abstract: A reticle container includes an outer pod and an inner pod, the inner pod configured to contain a reticle. The outer pod includes a pod door including a purge port, and a pod dome including one or more channels configured to receive a purge gas from the purge port and direct the purge gas to particular locations within the outer pod. The channels can direct the purge gas to one or more filters of the inner pod. The channels can direct the purge gas such that there is a pressure differential between the pressure at a first filter and the pressure at the second filter. The inner pod can include deflectors or channels to further direct the purge flow through the inner pod to purge the area surrounding the reticle.

Abstract: A semiconductor processing apparatus including: a substrate comprising a polymer material layer; and a conductive polymer coating layer that coats at least a portion of the polymer material layer of the substrate, wherein the conductive polymer coating layer comprises conjugated polymers, wherein the conductive polymer coating layer has a total extractable metals less than 400 ng/g, and wherein the conductive polymer coating layer is configured to discharge electrostatic buildup in the semiconductor processing apparatus when connected to a semiconductor processing system.

Abstract: A connection assembly includes a manifold. The manifold includes a first plate with a first longitudinal slot and a second longitudinal slot, a second plate with sidewalls and flanges that extend from the sidewalls, a lever pivotably coupled to the first plate and the second plate, a first shaft, and a second shaft. The flanges are configured to support a removable cartridge. The lever is configured to move the second plate relative to the first plate between a first position and a second position. The first shaft extends through the first longitudinal slot, the second plate and the lever. The second shaft extends through the second longitudinal slot and the lever.

Abstract: Articles and methods relating to coatings having superior chemical resistance and structural integrity, can be prepared via atomic layer deposition and fluoro-annealing at low process temperatures of between about 150° C. and less than 300° C. The film comprises a fluorinated metal oxide containing yttrium.

Abstract: The present disclosure includes the preparation of mixed-ligand compounds, such as tin(II) cyclopentadienylide complexes. The compounds of the present disclosure can be used as atomic layer deposition (ALD) precursors for extreme ultraviolet (EUV) lithography. The compounds of the present disclosure can also be used as plasma chemical vapor deposition (CVD) precursors for EUV lithography.

Abstract: A cleaning brush for a semiconductor fabrication process is provided. The cleaning brush includes a core and a brush member. The core includes a circumferential portion and a closed end portion. The circumferential portion surrounds a rotation axis of the cleaning brush and defines an inlet opening for receiving a fluid. The closed end portion is connected to an end of the circumferential portion that is opposite to the inlet opening along the rotation axis. At least one elongated conduit is defined within the core and fluidly communicated with the inlet opening, and the circumferential portion includes a plurality of outlet channels passing therethrough to fluidly communicate with the elongated conduit, the outlet channels being tilted outwardly toward the closed end portion. The brush member is connected to an outer surface of the circumferential portion and covers all of the outlet channels.

Abstract: Surface modified substrates and related methods are provided. A substrate having a modified surface comprises a first region and a second region. The first region is located above the second region. The first region comprises a nickel fluoride. The second region comprises a nickel alloy. A concentration of the nickel fluoride gradually decreases from the first region to the second region.

Abstract: Spacers for filtration membranes that are formed from perforated films. The spacer include unperforated regions, which can serve as integrated lamination strips, advantageously omitting the need for separate lamination steps required with woven and nonwoven spacer fabrics while also providing a spacer with a uniform thickness.

Abstract: Provided are certain membranes useful in the filtration of liquids and removal of various contaminants therein. In certain aspects the membranes have as one component a polyamide such as Nylon 11 and/or Nylon 12. Also provided is methodology for manufacturing such membranes and their use in filtration and purification of liquids. Membranes of the disclosure thus prepared exhibit superior acid stability when compared to polyamide membranes prepared from Nylon 6 or Nylon 6,6.

Abstract: Provided are compositions and methods for the wet etching of a surface of a microelectronic device substrate which contains surfaces comprising silicon nitride, silicon oxide, and polysilicon. The method of the invention involves a passivation step and a silicon nitride etching step, as more fully described below. The combination of the two steps was found to greatly improve the selectivity of the silicon nitride etching operation in the presence of polysilicon.

Abstract: Optimizing purge flow parameters in a substrate container, includes streaming a purge working fluid into an interior of the substrate container, discharging the purge working fluid from the interior of the substrate container, and varying purge flow parameters of the purge working fluid for a predetermined period of time, detecting at least one environmental condition in the interior of the substrate container during the predetermined period of time, determining optimized purge flow parameters based on the varied purge flow parameters and the at least one detected environmental condition during the predetermined period of time, and adjusting the streaming and the discharging in accordance with the optimized purge flow parameters. The substrate container may include, for example, a front opening unified pod or a reticle pod.

Abstract: A filter assembly for filtering liquid includes a filter housing and a filter cartridge disposed in an enclosed space of the filter housing. The filter housing including a cap affixed to the bowl to form the enclosed space. The cap including a fluid inlet port, a fluid outlet port, and a gas venting port for the enclosed space. The filter cartridge includes radial projections disposed in slots of the bowl blocking rotation of the filter cartridge relative to the bowl. A method of making a filter assembly includes inserting a filter cartridge into a bowl, and affixing the cap to the bowl.

Abstract: A method for overmolding a tubular structure including inserting a core pin into the tubular structure so that at least a portion of a main body of the core pin extends at least partially out of the tubular structure. The method further includes clamping the tubular structure to a mold cavity structure in an Z-direction using a retaining structure, in which the retaining structure includes an inclined portion and the flexible portion extends out of the mold cavity structure. The method also includes injecting a thermoplastic material into a mold cavity of the mold cavity structure to overmold at least a portion of the tubular structure, in which the injecting of the thermoplastic material includes the thermoplastic material contacting the portion of the core pin extended from the tubular structure.

Abstract: A tray assembly comprises a plurality of trays. Each of the plurality of trays comprises a first tray portion and a second tray portion which are couplable together by a retainer and which are engageable with a cam member. Depending on the orientation of the cam member, each of the plurality of trays of the tray assembly is configurable between an expanded configuration and a collapsed configuration. In the collapsed configuration, the tray assembly is insertable into an ampoule. In the expanded configuration, the tray assembly is removable from an ampoule.