Abstract: A composite nanoporous metal membrane, a method of making same, and a method of using same to filter supercritical CO2 are provided. The method of making generally includes a) providing a sintered coarse porous layer; b) applying to an outer face of the coarse porous layer second metal particles; c) sintering to form a structure comprising coarse and intermediate layers; d) applying a suspension of third metal particles; e) drying the suspension of third particles; f) pressing the dried layer of third particles; and g) sintering to form a composite nanoporous metal membrane. The composite nanoporous metal membrane generally includes: a) a sintered coarse layer; b) an intermediate layer comprising first metal particles and second metal particles joined in a sintered structure which is sintered to the coarse layer; and c) a fine layer comprising third metal particles joined in a sintered structure which is sintered to the intermediate layer.

Abstract: A bag assembly that includes a bag portion having first and second walls defining an interior and an opening. The interior is formed by the first and second walls of the bag portion being attached to each other along at least a portion of a perimeter of the bag assembly up to one end of the bag portion. Portions of the first and second walls of the bag portion that are not attached to each other form the opening. The bag assembly also includes an aseptic system for sterile connection and disconnection of the bag assembly from a sterile process, the aseptic system being continuously formed at an interface between the aseptic system and the one end of the bag portion. The aseptic system includes an internal passage to allow fluid communication with the interior of the bag portion and the sterile process.

Abstract: Reticle pods include inner pods where motion limiting features restrict translational motion of the cover and the baseplate relative to one another. The motion limiting features are in addition to gross alignment features included in the inner pod. The motion limiting features resist the translational motion before the gross alignment features would resist the motion. Motion limiting features can include elastic bodies providing friction against contact surfaces, or pins received on elastic contact surfaces or in diaphragms or motion limiting cups.

Abstract: Described are substrates that include high aspect ratio surfaces and non-high aspect ratio surfaces, at least two coatings, one coating at high aspect ratio surfaces and a second coating at non-high aspect ratio surfaces, and having fluorinated outer surfaces; methods of preparing these coatings; and substrates, surfaces, equipment, and components of equipment that include the coatings.

Abstract: Compositions useful for the selective etching, i.e., removal, of metal oxide hard masks such as zirconium oxide and hafnium oxide, often used as hard masks in microelectronic devices, in the presence of other materials such as polysilicon, silicon dioxide, silicon nitride, and tungsten are provided.

Abstract: Reticle pods include interfacing surfaces to secure segments of the reticle pod to one another. At least one of the interfacing surfaces is a ramped surface, such that when the reticle pods are secured to one another, the reticle is clamped between reticle contacts provided on the segments of the reticle pod. When the reticle pod is assembled and contains a reticle, a purge gas flow passage can be formed in the reticle pod. The height of the reticle contacts and the thickness of the reticle can be such that the reticle pod segments are spaced apart from one another by a gap, with the gap providing the purge gas flow passage. The reticle pod can be a stocker pod for the transportation and storage of reticles.

Abstract: Methods of manufacture and memory cells manufactured according to the methods are described. The manufacture has a lower thermal budget and experiences less heating by including a blocking layer including MgO. The method of manufacture may include annealing following deposition of the MgO, with the annealing occurring at temperatures below 900° C. or below 800° C. The blocking layers may be a first blocking layer made of SiO2 and a second blocking layer made of MgO. The memory cells may have a CMOS Under Array (CuA) structure. The memory cells may be part of a three-dimensional NAND memory device.

Abstract: Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon dioxide or silicon nitride.

Abstract: The invention provides a facile process for preparing various Group VI precursor compounds useful in the vapor deposition of such Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. The process provides an effective means to obtain such volatile materials, which can then be sources of molybdenum, chromium, or tungsten-containing materials to be deposited on such substrates. Additionally, the invention provides a method for vapor deposition of such compounds onto microelectronic device substrates.

Abstract: Some embodiments relate to precursor delivery systems for producing gas precursors. The precursor delivery system may include one or more precursor supply packages containing a solid precursor material. The one or more precursor supply packages may be configured to heat the solid precursor material to a temperature sufficient to result in thermal decomposition of the solid precursor material. The thermal decomposition of the solid precursor material may produce a gas precursor. The gas precursor may be supplied to a gas precursor-utilizing process. Further embodiments relate to precursor supply packages and related methods.

Abstract: Provided is a chemical-mechanical polishing composition comprising an abrasive, a basic component, at least one compound selected from the group consisting of a quaternary polyammonium salt, a quaternary ammonium salt having 6 or more carbon atoms, and an alkylated polymer having an amide structure, and an aqueous carrier; a rinse composition comprising the at least one compound and an aqueous carrier, as well as a method of chemically-mechanically polishing a substrate, and a method of rinsing a substrate, in which the respective compositions are used.

Abstract: Reticle containers include a rotating latch including a spring. The spring provides force bringing the segments of the reticle container towards one another such that a reticle in the container is clamped between the container segments. The rotating latch can include a head as part of an assembly on one of a cover or a baseplate of the reticle container, with a slot configured to accommodate the head provided on the other of the cover or baseplate. The head can be disposed at an end of a shaft, with the shaft connected to a base, which is contacted by spring providing force such that the contact of the head with the other of the cover or baseplate provides clamping force to a reticle stored between the cover and baseplate.

Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.

Abstract: A handle for a wafer carrier that includes an insertable member configured to be inserted into an aperture of the wafer carrier, and a locking mechanism moveable relative to the insertable member. A tab of the insertable member retains the insertable member in the aperture when in an engaged state. When in a locked state, the locking mechanism maintains the tab in the engaged state and a flexible member of the locking mechanism is positioned to maintain the locking mechanism in the locked state. A wafer carrier includes the detachable handle and the locking mechanism.

Abstract: Large format polymeric containers formed by injection molding include a main body having internal surfaces of high density and smoothness that define the internal space. The large format containers can include external features such as reinforcement ribs that are formed integrally with the container body, the reinforcement ribs having greater thicknesses than other portions of the walls of the container. The internal surfaces can include rounded corners and sloping towards a center of the container. Methods of manufacturing the large format polymeric containers include forming the polymeric main body using injection molding. The polymeric main body can be formed of multiple injection molded parts that are joined, or formed as a single piece. The injection molding can include applying between approximately 700 bar and approximately 1100 bar of pressure where at least a portion of the internal surface contacts a mold surface.

Abstract: Described are methods, devices, and systems useful for adsorbing organometallic vapor onto solid adsorbent material to remove the organometallic vapor from a gas mixture that contains the organometallic vapor and other vapor, particulate materials, or both.

Abstract: The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C?CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.

Abstract: The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precusors to form films.

Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.