Abstract: Substrate containers include purge flow distribution systems. The purge flow distribution systems can divide one or more input flows of purge gas to a plurality of gas distribution surfaces of a network of gas distribution devices. Methods of controlling purge can include configuring the substrate containers to provide determined purge gas flow rates at each of the gas distribution surfaces. The configuration can be performed using flow controls of the purge flow distribution systems. The purge gas flow rates can be determined based on purge performance parameters. A controller can direct the operation of the purge flow distribution systems. The controller and the substrate container can be combined in a substrate container purging system.

Abstract: Described are liquid filter apparatuses that include a housing, an interior within the housing, a cartridge assembly (otherwise known as a “filter cartridge”) contained within the housing, and a vent that allows gaseous fluid from an interior of the housing to be released to an exterior of the housing, or that include an electrostatic charge mitigation feature, as well as related methods.

Abstract: Precursors for selective deposition of silicon-containing films are provided. A precursor comprises a compound of the formula: R(HO)Si(OR1)(OR2), where: R is or comprises an alkyl, an alkenyl, or an alkoxy; and R1 and R2 are independently a hydrogen, an alkoxyl, or R1 and R2 are bonded to form a heterocycle. Devices comprising silicon-containing films are also provided, wherein the silicon-containing film comprises a reaction product of the precursor and another reactive species. Methods of depositing silicon-containing films are also provided, among other things.

Abstract: A system is provided. The system includes a substrate container having at least two purge modules. Each purge module of the at least two purge modules includes a flow control device. The flow control device of each purge module is configured to be actuated for egress of a purge fluid. A method of actuating flow control devices of purge modules of a substrate container is provided. The method includes starting a purge process of the substrate container; streaming a purge fluid into an interior of the substrate container, the substrate container having at least two purge modules, each purge module of the at least two purge modules including a flow control device, the flow control device of each purge module being configured to be actuated for egress of the purge fluid; and actuating the flow control device for egress of the purge fluid.

Abstract: Sensor zones are created on an inner pod of a reticle container using a dry coating method. The sensor zones are discrete zones having a specific spectral reflectivity. The sensor zones are positioned such that they can be read by a tool to determine distance of portions of the pod. The use of discrete zones and a dry coating method for applying those discrete zones overcomes issues with inconsistency and difficulty in cleaning or maintaining reflectance of an inner pod of the reticle container in comparison with inner pods plated entirely with material or other wet coating applied materials.

Abstract: Some embodiments relate to additive manufactured articles having passivated surfaces and related methods. The methods may comprise forming a three-dimensional (3D) article by additive manufacturing to obtain an additive manufactured 3D article comprising a magnesium component. The method may further comprise exposing the additive manufactured 3D article to a reactive gas phase comprising a fluorine component. The fluorine component from the reactive gas phase may react with the magnesium component of the additive manufactured 3D article to form a passivation layer at and below a surface of the additive manufacture 3D article.

Abstract: Regulator assemblies can be tested using test fluids selected to have a molecular weight about that of a selected fluid to be dispensed from a fluid storage and delivery vessel including the regulator assembly. The test fluid can be a single gas or a mixture. The test fluid can have a molecular weight of between 80% and 110% of the molecular weight of the selected fluid dispensed from the fluid storage and delivery vessel. Regulator assemblies tested in this manner can pass evaluation when they show fewer than two spikes on the initiation of flow of the test gas. These regulator assemblies can be installed into fluid storage and delivery vessels, particularly for storage and delivery of pressurized fluids.

Abstract: The disclosure provides an improved process for preparing oleophobic fluoropolymers. The resulting fluropolymers were found to be effective in imparting hydrophobic and oleophobic properties to porous polymeric membranes such as PTFE. The treated PTFE membrane can reach an oleophobic level of 6 or above, (according to the AATCC-118-1997 oil repellency test method) with a low air flux loss.

Abstract: The invention provides certain mixed Sn (II) amide/alkoxide precursor compounds. These compounds are useful in precursor compositions in the vapor deposition of tin-containing films such as tin oxide films onto a surface of a microelectronic device. These precursor compounds are useful in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing when paired with certain counter-reactants in a vapor deposition process. In this process, the resulting organotin polymeric surface is thus EUV-patternable insofar as when exposed to a patterned beam of EUV light, exposed portions are subjected to further reaction, thus creating regions which are chemically and physically different; this difference enables further processing and lithography of exposed regions and/or non-exposed regions and lithography in pursuit of the ultimate fabricated microelectronic device.

Abstract: The invention provides compositions useful in the etching of polysilicon in the presence of silicon oxide and silicon nitride. The compositions comprise choline hydroxide, an oxidizing agent such as periodic acid, and optionally a surfactant, and are useful in the etching of polysilicon in general, and in particular in both the operation of polysilicon trim as well as polysilicon exhume. The utilization of an added oxidizing agent was found to reduce selectivity of silicon etching based on the silicon crystal orientation, which was found to reduce roughness and the presence of residual silicon residues, such as silicon (111) residues after the etching step.

Abstract: Precursors useful in the formation of tin-containing films are provided. The precursors comprise a functionalized tin compound in which one or more ligands are coordinated to Sn, and the Sn is functionalized with at least one functional group. Methods for forming the precursors and methods for forming tin-containing films using the precursors are further provided.

Abstract: The invention provides a process for preparing molybdenum and tungsten oxyhalide compounds which are useful in the deposition of molybdenum and tungsten containing films on various surfaces of microelectronic devices. In the process of the invention, a molybdenum or tungsten trioxide is heated in either a solid state medium or in a melt-phase reaction comprising a eutectic blend comprising alkaline and/or alkaline earth metal salts. The molybdenum or tungsten oxyhalides thus formed may be isolated as a vapor and crystallized to provide highly pure precursor compounds such as MoO2Cl2.

Abstract: The use of selective deposition of silicon nitride can eliminate conventional patterning steps by allowing silicon nitride to be deposited only in selected and desired areas. Using a silicon iodide precursor alternately with a thermal nitrogen source in an ALD or pulsed CVD mode, silicon nitride can be deposited preferentially on a surface such as silicon nitride, silicon dioxide, germanium oxide, SiCO, SiOF, silicon carbide, silicon oxynitride, and low k substrates, while exhibiting very little deposition on exposed surfaces such as titanium nitride, tantalum nitride, aluminum nitride, hafnium oxide, zirconium oxide, aluminum oxide, titanium oxide, tantalum oxide, niobium oxide, lanthanum oxide, yttrium oxide, magnesium oxide, calcium oxide, and strontium oxide.

Abstract: A reticle container includes an outer pod and an inner pod, the inner pod configured to contain a reticle. The outer pod includes a pod door including a purge port, and a pod dome including one or more channels configured to receive a purge gas from the purge port and direct the purge gas to particular locations within the outer pod. The channels can direct the purge gas to one or more filters of the inner pod. The channels can direct the purge gas such that there is a pressure differential between the pressure at a first filter and the pressure at the second filter. The inner pod can include deflectors or channels to further direct the purge flow through the inner pod to purge the area surrounding the reticle.

Abstract: A semiconductor processing apparatus including: a substrate comprising a polymer material layer; and a conductive polymer coating layer that coats at least a portion of the polymer material layer of the substrate, wherein the conductive polymer coating layer comprises conjugated polymers, wherein the conductive polymer coating layer has a total extractable metals less than 400 ng/g, and wherein the conductive polymer coating layer is configured to discharge electrostatic buildup in the semiconductor processing apparatus when connected to a semiconductor processing system.

Abstract: A connection assembly includes a manifold. The manifold includes a first plate with a first longitudinal slot and a second longitudinal slot, a second plate with sidewalls and flanges that extend from the sidewalls, a lever pivotably coupled to the first plate and the second plate, a first shaft, and a second shaft. The flanges are configured to support a removable cartridge. The lever is configured to move the second plate relative to the first plate between a first position and a second position. The first shaft extends through the first longitudinal slot, the second plate and the lever. The second shaft extends through the second longitudinal slot and the lever.

Abstract: Articles and methods relating to coatings having superior chemical resistance and structural integrity, can be prepared via atomic layer deposition and fluoro-annealing at low process temperatures of between about 150° C. and less than 300° C. The film comprises a fluorinated metal oxide containing yttrium.

Abstract: The present disclosure includes the preparation of mixed-ligand compounds, such as tin(II) cyclopentadienylide complexes. The compounds of the present disclosure can be used as atomic layer deposition (ALD) precursors for extreme ultraviolet (EUV) lithography. The compounds of the present disclosure can also be used as plasma chemical vapor deposition (CVD) precursors for EUV lithography.

Abstract: A cleaning brush for a semiconductor fabrication process is provided. The cleaning brush includes a core and a brush member. The core includes a circumferential portion and a closed end portion. The circumferential portion surrounds a rotation axis of the cleaning brush and defines an inlet opening for receiving a fluid. The closed end portion is connected to an end of the circumferential portion that is opposite to the inlet opening along the rotation axis. At least one elongated conduit is defined within the core and fluidly communicated with the inlet opening, and the circumferential portion includes a plurality of outlet channels passing therethrough to fluidly communicate with the elongated conduit, the outlet channels being tilted outwardly toward the closed end portion. The brush member is connected to an outer surface of the circumferential portion and covers all of the outlet channels.