Abstract: Provided is a process for preparing certain silane precursor compounds, e.g., triiodosilane from trichlorosilane utilizing lithium iodide in powder form and catalyzed by tertiary amines. The process provides triiodosilane in high yields and high purity. Triiodosilane is a precursor compound useful in the atomic layer deposition of silicon onto various microelectronic device structures.

Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.

Abstract: A gas filter includes a housing including a mounting portion and a main portion. The mounting portion is configured to mount the gas filter on a surface of a device. The main portion is configured to be positioned apart from the surface of the device and extends from the mounting portion in a horizontal direction. The housing has an inlet and an outlet and defines a flow channel between the inlet and the outlet. The flow channel has first and second channel portions, the first channel portion extending from the inlet to the second channel portion, the second channel portion extending in a direction substantially parallel to the horizontal direction. A filter member is positioned in the flow channel between the inlet and the outlet.

Abstract: A method of selectively removing aluminium oxide or nitride material from a microelectronic substrate, the method comprising contacting the material with an aqueous etching composition comprising: an etchant comprising a source of fluoride; and a metal corrosion inhibitor; wherein the composition has a pH in the range of from 3 to 8. Aqueous etching compositions and uses are also described.

Abstract: A cleaning composition and process for cleaning an in-process microelectronic device substrate, e.g., by post-chemical mechanical polishing (CMP) cleaning, to remove residue from a surface thereof, wherein the cleaning composition may be especially effective for cleaning a substrate surface that includes exposed metal such as cobalt, copper, or both, along with dielectric or low k dielectric material, and wherein the cleaning composition includes corrosion inhibitor to inhibit corrosion of the exposed metal.

Abstract: A valve system having a valve position indicator is disclosed. The valve position indicator allows for viewing of the valve position from one or more viewing locations. In one example, the valve position indicator includes a side valve open/close indicator and a top valve open/close indicator on a valve assembly. An indicator locking mechanism securely locks the valve position indicator in alignment with a position of a control valve.

Abstract: A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

Abstract: A tamper-resistant containment package is described, including a container; a cover configured to engage with the container so that the container and cover form an enclosed volume; and at least one tamper-resistant mechanical fastener that is cooperative with the cover and container to render the containment package tamper-resistant when the container and cover are engaged in a sealed state isolating the enclosed volume from an ambient environment surrounding the containment package. Such containment package is usefully employed for storage and transport of chemical reagents that pose a health, safety, and/or environmental risk if released to an exterior environment of the containment package.

Abstract: A method of CMP includes providing a slurry solution including ?1 per-compound oxidizer in a concentration between 0.01 M and 2 M with a pH from 2 to 5 or 8 to 11, and ?1 buffering agent which provides a buffering ratio ?1.5 that compares an amount of a strong acid needed to reduce the pH from 9.0 to 3.0 as compared to an amount of strong acid to change the pH from 9.0 to 3.0 without the buffering agent. The slurry solution is exclusive any hard slurry particles or has only soft slurry particles that have throughout a Vickers hardness <300 Kg/mm2 or Mohs Hardness <4. The slurry solution is dispensed on a hard surface having a Vickers hardness >1,000 kg/mm2 is pressed by a polishing pad with the slurry solution in between while rotating the polishing pad relative to the hard surface.

Abstract: Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.

Abstract: A solid delivery precursor is described, which is useful for volatilization to generate precursor vapor for a vapor deposition process. The solid delivery precursor comprises solid bodies of compacted particulate precursor, e.g., in a form such as pellets, platelets, tablets, beads, discs, or monoliths. When utilized in a vapor deposition process such as chemical vapor deposition, pulsed chemical vapor deposition, or atomic layer deposition, the solid delivery precursor in the form of solid bodies of compacted particulate precursor provide substantially increased flux of precursor vapor when subjected to volatilization conditions, in relation to the particulate precursor. As a result, vapor deposition process operation can be carried out in shorter periods of time, thereby achieving increased manufacturing rates of products such as semiconductor products, flat-panel displays, solar panels, LEDs, optical coatings, and the like.

Abstract: The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C?CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.

Abstract: A dispensing assembly for a pressure dispense package includes a connector having separate and distinct liquid and extraction conduits, and having a pressurization gas conduit. A liner fitment adapter may include a longitudinal bore to receive a probe portion of a connector defining a liquid extraction conduit, and may include a lateral bore to enable removal of gas. Insertion of a connector into a dispensing assembly simultaneously makes fluidic connections between (a) a gas extraction conduit and a dispensing volume; (b) a liquid extraction conduit and the dispensing volume, and (c) a pressurization gas conduit and a space to be pressurized within a pressure dispense vessel.

Abstract: A purge tower assembly for a substrate container. The assembly may include a purge interface body, including a base portion and a top portion, for mounting to a bottom plate of a substrate container. The base portion may include a substantially tubular base sidewall and the top portion may have a top sidewall positioned on the top edge of the base portion. The top portion may include an inlet nozzle for mounting through a rearward inlet in the bottom plate. The inlet nozzle may have a substantially tubular sidewall extending upwardly from the top sidewall and defining an interior of the inlet nozzle. The base portion and the top sidewall may define an offset conduit portion disposed connected to the base portion and the inlet nozzle, the base portion and the inlet nozzle in fluid communication via the offset conduit portion.

Abstract: A method of making depth filtration media, such as for use in a depth filter, are described. The resulting depth filtration media includes a core tube having two or more different layers. The layers can be fibers, such as polymeric or inorganic fibers, wrapped layers of a filter material, or pleated and folded layers of a filter material.

Abstract: A reticle container for containing a reticle including a base plate having one or more windows. Each of the windows can include mounting recess having a recess sidewall including an undercut defined therein. A transparent substrate can be disposed in the mounting recess and is retained therein by a retention member having an arcuate portion extending between a first end portion and a second end portion. At least the first end portion of the retention member can be positioned in the undercut defined in the recess sidewall such that the arcuate portion of the retention member contacts the transparent substrate to retain the transparent substrate in the mounting recess.

Abstract: An anti-rotation device for preventing a hydraulic connector assembly from leaking. Various embodiments of the anti-rotation device provide a mechanism whereby threadably engaged connectors, such as compression fittings, are permitted to rotate only a fraction of a turn after loosening. For many applications, the limited degree of loosening is sufficient to prevent the onset of leaking. Structurally, the anti-rotation device can include a band that is secured to a female nut of a hydraulic connector. Protrusions extend laterally from the band and engage with a stop tab on the male body of the hydraulic connector assembly, thereby limiting rotation of the female nut that would otherwise cause leaks. Locking provided by zip tie structures proximate the free ends of the anti-rotation device.

Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues in the production of semiconductors. There is provided a stock composition comprising: a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base; a corrosion inhibitor; and a combination of at least two or more polyprotic acids or salts thereof, wherein at least one said polyprotic acid or salt thereof contains phosphorous.

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant, one etchant, and one activator to enhance the etch rate of titanium nitride.

Abstract: Filters for semiconductor tool and clean room applications to control airborne molecular contamination. The filter cartridge system includes a filter cartridge having a non-woven fiber and at least one adsorbent. In some embodiments, the filter cartridge is constructed of substantially combustible materials to support its end of service destruction.