Abstract: A modular filter manifold includes one or more plates, each plate including connections for one or more filters on a first side, and connections for fluid lines on a second side opposite the first. At least two fluid line connections are provided for each filter connection, with a fluid passage through the plate for each fluid line connection. Each of the fluid passages are independent of one another. The manifold plates can be joined to a support structure to form a manifold to which filters can be attached. Piping can be connected to the fluid line connections to allow flow through the filters in series or parallel flow.

Abstract: Described are filter materials having polycarboxyl ligands, such as iminodiacetic acid, which are highly effective for filtering metals or metal ions from fluids. The filter materials can be particularly useful to filter various fluid compositions, such as those used for wet etching, removing photoresist, and cleaning steps in microelectronic device manufacturing.

Abstract: Described are techniques for applying a cured polymeric blanket coating onto a surface, specifically for applying a blanket-coated cured polymeric coating onto a surface of a substrate that is useful as an electrostatic chuck for processing semiconductor wafers.

Abstract: Cobalt precursors are described, having application for vapor deposition of cobalt on substrates, such as in atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes for forming interconnects, capping structures, and bulk cobalt conductors, in the manufacture of integrated circuitry and thin film products.

Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.

Abstract: Disclosed herein are surface coatings for plasma components that have the benefit of being robust against chemical and plasma physical attack in aggressive (e.g., fluorine-based) plasma environments. The coatings also provide low plasma surface recombination rates for active oxygen, nitrogen, fluorine, and hydrogen species when compared with other known surface treatments. The coatings can be applied to any plasma system component not requiring etching or plasma cleaning including but not limited to materials like quartz, aluminum, or anodized aluminum. Additionally, the efficiency of the system is increased by applying a non-reactive coating to system components thereby increasing the flow of excited plasma species to the plasma chamber of the system.

Abstract: Described are porous sintered bodies and methods of making porous sintered bodies by steps that include an injection molding step.

Abstract: A chemical delivery system includes a bulk container, a run/refill chamber, a first conduit and a second conduit. The bulk container stores a precursor. The run/refill chamber includes a plurality of spaced tubes having a plurality of surfaces for receiving the precursor in vapor form and storing the precursor in solid form. The first conduit connects the bulk container to the run/refill chamber for transporting the precursor from the bulk container to the run/refill chamber in vapor form. The second conduit connects the run/refill chamber to a deposition chamber for transporting the precursor from the run/refill chamber to the deposition chamber in vapor form.

Abstract: Welded check valves include a poppet assembly, a spring, and a disc that contacts the spring. The disc may be held at a position away from a weld when forming the welded check valve. Embodiments may include retention features configured to allow one or more of the poppet assembly and disc to pass the retention features in an assembly orientation, and to retain those elements when they are in an operational orientation. Methods include inserting the poppet assembly, contacting the poppet assembly with a spring, inserting a disc, retaining the disc away from a weld side, and welding the check valve together. The poppet assembly and/or disc may pass one or more retaining features when inserted, and be retained by the retaining features when the check valve is operated. The weld may be a thermal weld.

Abstract: An electrostatic chuck solves the problem of wafer sticking by providing conductive paths on raised embossments that are bridged together and are connected to ground that support the wafer substrate above the surface of the electrostatic chuck. Further, laterally spaced electrode patterns and electrode elements which are spaced laterally and longitudinally away from the raised embossments reduce or eliminate electrical coupling during wafer clamping between conductively coated embossments and the electrode elements, thereby creating a low resistance path for charges remaining on the wafer after declamping to promptly travel to ground. The conductive bridge and electrode pattern configuration also substantially reduces or eliminates any charge build up on the conductive bridge(s) during clamping in order that charge build up in “islands” (worn portions of the insulator layer of the main field area) do not affect the charge dissipation from the wafer substrate through the conductive bridges to ground.

Abstract: The present disclosure provides a porous polymeric membrane that is coated with a cross-linked polymerized monomer. The coating on the porous polymeric membrane has a charge when it is immersed in an organic liquid. The coated porous polymeric membrane, a filter utilizing the membrane, and a method for treating an organic liquid used for photoresist with the coated porous polymeric membrane to remove metal contaminants from the organic liquid are disclosed.

Abstract: A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween.

Abstract: Described are methods, devices, and systems useful for adsorbing organometallic vapor onto solid adsorbent material to remove the organometallic vapor from a gas mixture that contains the organometallic vapor and other vapor, particulate materials, or both.

Abstract: Described are multi-layer coatings, substrates (i.e., articles) coated with a multi-layer coating, and methods of preparing a multi-layer coating by atomic layer deposition, wherein the coating includes layers alumina and yttria.

Abstract: Provided is a process for the mono-alkylation of cyclopentadiene, utilizing a cyclopentadiene magnesium halide and a metal salt of an alkyl or aryl sulfonate as co-reactant with an alkyl halide alkylating reactant. The process provides facile methodology for the mono-alkylation of cyclopentadiene, with conversions as high as about 96 percent and selectivity for mono-alkylation (over higher level alkylation, such as di- or tri-) as high as about 99%.

Abstract: The present disclosure relates to a composite membrane formed by lamination of two or more separate porous polymeric layers, as well as to a method and system for lamination. Advantageously, the resulting composite is a single layer, being difficult to separate into its component layers, yet effectively maintains the filtering capabilities of the component layers when not laminated.

Abstract: Provided is a facile process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin precursor compounds, for example tris(dimethylamido)isopropyl tin, in a highly pure form. As such, the products of the process are particularly useful in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

Abstract: Embodiments provide a filter with a generally rectangular, non-cylindrical profile. The filter may have multiple pleat packs positioned between pleat covers that define regions and flow channels in a cavity of the filter body. The pleat covers have openings that allow a fluid to flow through the multiple pleat packs via parallel flows or series flows. End caps bonded to the body define flow passages for directing the fluid from an inlet to an outlet via the pleat packs for series or parallel filtration. The pleat packs may be made of the same or different materials and may be configured with the same or different heights based on flow requirements. A cage or a separator may be positioned between the pleat packs. The pleat packs may be made of a continuous pleated membrane with bridges defining a space between the pleat packs to accommodate the cage or separator.

Abstract: Provided is a facile methodology for preparing certain organotin compounds having alkyl and alkylamino or alkyl and alkoxy substituents. The process provides the organotin compounds in a highly pure form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.