Abstract: A semiconductor wafer position display system, a semiconductor wafer position display method, and a semiconductor wafer position display program with which a deviation from an appropriate placement position of a semiconductor wafer mounted in a wafer mounting part can be displayed to a user in an easily understood manner are provided.

Abstract: A continuous distillation-type trichlorosilane vaporization supply apparatus includes an evaporator including an introduction port for hydrogen gas as a carrier gas and having a heater that vaporizes liquid trichlorosilane; and a condenser including a cooling device to condense liquid at a temperature corresponding to a saturated vapor pressure, which is lower than a vapor pressure of the vaporized trichlorosilane gas, wherein a center line of the evaporator and a center line of the condenser are not on the same line, and a lower end of the condenser has a structure that communicates with a lower end of the evaporator through a pipe.

Abstract: There are provided a susceptor having a recessed wafer mounting section, in which a semiconductor wafer is mounted and which is configured to include a circular bottom portion and a side wall portion, on an upper surface, a reaction chamber in which the susceptor is provided, an imaging unit that is provided above the reaction chamber and images the semiconductor wafer and the wafer mounting section, and an image analysis unit that analyzes the deviation of the semiconductor wafer from the wafer mounting section on the basis of an image captured by the imaging unit.

Abstract: An epitaxial growth device comprises a reaction chamber defined by a substrate setting portion, a ceiling board and a sidewall portion, a heating member and reactant gas-introduction member. The ceiling board is fixed to a ring-like support portion having a through-hole as viewed from above. A diameter of the through-hole becomes reduced gradually toward a substrate-side. The ceiling board is fixed to an end portion of the substrate-side of the through-hole.

Abstract: A susceptor device includes: a placement section on which a substrate is placed; a lift pin which is provided in the placement section and protrudes further to the upper side than the placement section at the time of carrying-in or carrying-out of the substrate, thereby supporting the substrate placed on the placement section; and lift pin moving means for moving the lift pin up and down. At the time of carrying-in or carrying-out of the substrate, the substrate is moved up and down by moving the lift pin up and down by the lift pin moving means in a state where the substrate is supported by the lift pin, and the susceptor device further includes a control section which controls the lift pin moving means so as to reduce a movement speed immediately before the substrate and the lift pin come into contact with each other, in a case of moving the lift pin.

Abstract: It is an object of the present invention to provide an observation unit which efficiently cools apparatus members in a reaction chamber of a semiconductor manufacturing apparatus in a high-temperature atmosphere and reduces overexposure. An observation unit comprising: an imaging apparatus for imaging the inside of a reaction chamber of a semiconductor manufacturing apparatus in an atmosphere of a high temperature; a housing case which houses the imaging apparatus and is attached with a translucent member which guides an optical image of the inside of the reaction chamber to the imaging apparatus; and a cooling medium supplying apparatus for supplying a cooling medium to the inside of the housing case, wherein the translucent member is a silica glass plate having a gold film on both sides or one side.

Abstract: Systems and methods of coatings for reflective surfaces. An optical system includes a reflective surface for reflecting optical energy and a transparent coating disposed upon the reflective surface. The coating may be characterized as more chemically inert than the reflective surface in an operating environment of the reflector. The coating may be characterized as harder than the reflective surface. The coating may be characterized as more refractory than the reflective surface. The coating may include diamond like carbon and/or other tetrahedrally bonded stable material, e.g., silicon carbide.

Abstract: Systems and methods of coatings for semiconductor processing equipment. A semiconductor substrate processing system includes an enclosure for containing a semiconductor processing gas. The enclosure has an interior surface that is at least partially coated with a Silicon carbide coating to a desired thickness. The enclosure may be inlet piping for conveying the semiconductor processing gas to a processing chamber for processing the semiconductor substrate, a processing chamber and/or an exhaust flume for conveying used semiconductor processing gas away from a processing chamber. The interior surface may include additional coatings comprising Silicon and/or diamond like Carbon.

Abstract: It is an object of the present invention to provide a support for a semiconductor substrate capable of correctly measuring a temperature in the vicinity of a semiconductor substrate. A first support plate 2 and second support plate 3 of a wafer support 1, which are made of a material having almost the same thermal conductivity, are integrally superposed. A through-hole formed in the central region of the first support plate 2 is covered with a cap 7. A silicon semiconductor wafer 9 is placed on a wafer support part 4 of the wafer support 1. A space is formed between the silicon semiconductor wafer 9 and a counterbore part 4a. In a groove 5 formed on the second support plate 3, a thermocouple 6 is arranged parallel with a placed surface of the silicon semiconductor wafer 9 in the central region and peripheral region of the support plate to measure the temperature of the silicon semiconductor wafer.