Abstract: A base-coupled logic gate is characterized by input Schottky diodes that are directly formed on the base region of the switching transistor for the gate. A logic of this type provides flexible circuit arrangements and savings in required area, while achieving very high speeds. As a result of the savings in area, the buried layer capacitance of the gate is also reduced, which facilitates the high-speed operation of the circuit.

Abstract: A semiconductor integrated circuit device includes a high performance interconnect structure which comprises a plurality of interconnects, with each interconnect being structurally separated from the remaining interconnects except at electrical contact points. In one embodiment, each interconnect is substantially surrounded by a layer of dielectric material, there being gaps between each adjacent layer of surrounding dielectric material. Another embodiment, a layer of electrically conductive material is formed over the surrounding dielectric layer preferably filling in the gaps between adjacent layers of surrounding dielectric material. The layer of electrically conductive material acts as a ground plane and heat sink.

Abstract: A thick glass passivation layer comprises an alternating sequence of structurally dissimilar but chemically compatible layers of material over the surface of a substrate, so as to provide sufficient elasticity to compensate for thermal expansion differences that would otherwise crack causing in thick monolithic films. A first layer comprises glass that has been deposited over the surface of the structure using chemical vapor deposition. A second layer of the passivating glass material is then provided on the substrate using a spinning technique. The chemical vapor deposition and spun layers continue to be applied in an alternating fashion until a film having the desired thickness is formed. Each chemical vapor deposition layer provides an elastic cushion for the subsequently spun layers. The spun layers allows a planar topography to be maintained without the need for high temperatures.

Abstract: A base-coupled logic gate is characterized by input Schottky diodes that are directly formed on the base region of the switching transistor for the gate. A logic of this type provides flexible circuit arrangements and savings in a required area, while achieving very high speeds. As a result of the savings in area, the buried layer capacitance of the gate is also reduced, which facilitates the high-speed operation of the circuit.

Abstract: A semiconductor integrated circuit device is provided with an electrical interconnect system which is stable at high temperatures. The interconnect system employs refractory metal compounds which are electrically conductive, which form stable couples with silicon and compounds thereof, and which remain stable at temperatures exceeding approximately 500.degree. C.

Abstract: A line scan image sensor capable of operating at several different spatial sampling frequencies is provided by utilizing a line scanning array having sampling photoelements of different surface areas. The spatial sampling frequency of the sensor can be varied by selectively combining the charge packets generated by the individual photoelements. In a preferred embodiment, photoelements having two different surface areas are used, with the ratio of the smaller surface area with respect to the larger surface area being 1:.sqroot.2. A programmable amplifier is provided to normalize the outputs of photoelements having different surface areas so that a uniform illumination on different photoelements will produce a uniform response. The programmable amplifier can also be programmed to equalize the outputs of the sensor between the different spatial sampling frequency modes.

Abstract: A novel output stage is provided for producing a TTL output signal in response to the differential output signals from an ECL switch. The output stage includes a translator portion to shift the levels of the complementary signals produced by the ECL switch to the appropriate levels for use in driving a TTL output stage, a phase splitter circuit which is driven by the level shifted complementary output signals from the ECL stage and a single output lead. The currents through the level shifting transistors and resistors are controlled by a single current reference generator. The output signals from the translator circuit have voltage levels substantially independent of variations in the power supply voltage.

Abstract: To completely isolate an island of silicon, a trench is cut into an epitaxial layer to provide access to a differently doped buried layer. While suspending the portion of the epitaxial layer surrounded by the trench by means of an oxide bridge, the underlying region of the buried layer is etched away to form a cavity under the active area. This cavity, as well as the surrounding trench, is then filled with a suitable insulating material to isolate the active island from the substrate.

Abstract: An improved electron beam test probe apparatus and a method for use of said apparatus for use in measuring the potential in a specimen which enables measurements to be insensitive to local electric fields in the vicinity of the point at which the potential of the specimen is being measured. The apparatus consists of an electron beam for bombarding the specimen at the point at which the potential of the specimen is to be measured, a magnetic lens for collimating the secondary electrons emitted fom the specimen in response to this bombardment, and a detector system for measuring the energy distribution of the secondary electrons so collimated. Tubular electrodes are employed in the energy distribution detection system. These electrodes have significantly higher field uniformity and intercept a smaller fraction of the secondary electrons than wire mesh electrodes.

Abstract: A method and means for reducing signal propagation losses in very large scale integrated circuits is provided comprising a ground plane located adjacent to, but insulated from, a conductive signal layer overlying an active region in a semiconductor substrate. While, the ground plane is preferrably disposed between the signal layer and the substrate, it may be disposed above the signal layer. Moreover, two or more signal layers may be employed and sandwiched between a pair of ground planes.

Abstract: A method for inhibiting out-diffusion of dopants from polycrystalline or single crystal silicon substrates of high speed semiconductor devices into metal silicide conductive layers disposed on the substrate comprises interposing a refractory metal nitride layer between the doped silicon substrate and the refractory metal silicide conductive layer. Dopant out-diffusion is further retarded, and contact resistance lowered, by adding a thin layer of refractory metal between the refractory metal nitride layer and the silicon substrate.

Abstract: A semiconductor chip package configuration and a method are disclosed for facilitating testing of the chip package and mounting of the chip package on a substrate by forming one or more lead alignment bars in interconnecting relation with adjacent leads on the chip package, the lead alignment bars being formed from a material providing electrical isolation between leads during testing of the chip package and for providing physical spacing between the leads both during testing and later mounting of the chip package on the substrate so as to prevent adjacent leads from inadvertent contact. Preferably, the lead alignment bars are formed from a high resistivity material selected to provide sufficient conductivity between the interconnected leads for minimizing electrostatic discharge conditions therebetween, the material being sufficiently non-conductive to permit functional and dynamic testing of the leads.

Abstract: A system which enables signals to be supplied at precisely desired times in an automatic test system. The apparatus includes a base delay memory which stores information related to a base time delay, while a vernier memory stores information relating to timing corrections to be made to the base time delay. The base delay memory controls a counter while the correction memory controls a vernier deskew apparatus for further delaying the output signal from the counter. To prevent carries from the vernier memory from influencing the base delay memory, the most significant bit of the vernier memory is of the same significance as the least significant bit of the base delay memory. The most significant bit of the vernier memory is also connected to drive the counter, in effect providing the counter with two least significant bits, and enabling a single base delay memory to control more than one signal timing paths.

Abstract: A processor controlled IC component test apparatus adapted to be employed in-line with automatic IC DIP component handling equipment is capable of conducting a preselected verification check of each IC device regardless of the orientation of the DIP in the device contact receptable of the IC handling apparatus. As each device under test (DUT) is inserted into the apparatus test head, a pin-check residual voltage measurement test is conducted to ensure that all the pins of the DUT are in contact with the contact terminals of the test head. If the pin-check test establishes that all the pins of the DUT are in contact with the contact terminals of the test head, a prescribed non-destructive impedance measurement test is carried out in order to determine the orientation of the DIP in the test head.

Abstract: A modified Booth algorithm is implemented in the arithmetic logic of the ALU data path to cut the number of cycles to do a multiply in half thereby improving execution time of the multiplication operation. A Booth Encoder examines the two least significant bits of the multiplier stored in the Q2 register and the bit which was previously shifted out on the last partial product shift cycle. Based upon the status of these three bits, the Booth Encoder causes the ALU to add or substract one times the multiplicand to the contents of the partial product register and shift twice, add or substract two times the multiplicand to the contents of the partial product register and shift twice, or do nothing but shift twice. A pre ALU B shifter provides a single left shift of the multiplicand to provide the multiplication by two when same is necessary.

Abstract: A memory system for storing and retrieving data sequences of symbols in response to a query sequence is disclosed. Each of the sequences is made up of three types of symbols, constants, delimiters, and variables. A data sequence is retrieved in response to a query sequence if the two sequence can be made identical by replacing the variables in each sequence by constants or combinations of constants and delimiters, the combinations beginning and ending with a delimiter. To reduce the time needed to search the memory for all data sequences corresponding to a given query sequence, multiple processing units are employed. In addition to carrying out rule-based searches, the memory system can efficiently retrieve all records containing a specified list of key words.

Abstract: An apparatus for reducing the write recovery time of a memory during a write operation is responsive to the detection of a write enable signal for causing the data being written into a selected memory cell to be immediately coupled out on the memory's corresponding output data line independent of the speed at which the data is actually written into the memory cell. The state of a cache memory element is set to reflect this data state such that when the write enable signal goes off, the cache memory element maintains the present state of said output data line. The cache memory element is overridden as the corresponding memory cell reaches a steady state condition at the end of the write operation.

Abstract: A subsystem component for use in an image processing system to compute a gray scale histogram function or various statistical functions relating to the coordinates of a region or regions in a binary image. A selected function is computed at the video rate of frame generation.

Abstract: A high precision digital to analog converter comprises the combination of an imperfect or low resolution digital to analog converter having an error function known in terms of orthonormal components and an error compensating device capable of generating correction terms which do not interact with one another. The correction terms are based on orthonormal components namely, the Walsh function components, of each signal level to be compensated. At most only one weighting value per bit is required, the combination of which will compenate for errors of any bit combination. In a specific embodiment employing feedforward compensation, the output of the low resolution converter and of the compensating device may be summed to produce a high performance, high precision converter with increased accuracy and resolution.

Abstract: A temperature compensated sense amplifier is connected to the sense node of a memory array which is OR tied to the bit lines of the array. A PNP current mirror supplies voltage independent controlled current to the sense node. A level shifting stage is connected to the sense node to establish a threshold sensing level, and to switch on to steer the current into the amplifier stage. A compensation stage is connected to the level shifting stage and the amplifier stage to compensate for the .beta. factors of the transistors and the resistive changes with temperature. A temperature compensated current sink is connected to the PNP current mirror to track over temperature in opposition therewith and maintain a constant current into the sense node. The level shifting stage and the amplifier stage also include temperature compensating features to provide a sensing threshold which tracks constantly over the operating temperature range.