Abstract: A lead frame (20) for tape automated bonding includes individual leads (12) each having a stretch loop (40) to accommodate elongation of the loop as the lead is bonded to a substrate (28) after inner lead bonds have been formed to an integrated circuit (26). Such a lead frame allows temporary connection and testing of the circuit prior to final lead formation and packaging.

Abstract: Method and apparatus for forming a ball at the end of bonding wire or lead wire in a capillary wire holding and bonding tool is described suitable for ball bonding of copper and aluminum lead wire to integrated circuit chips. A ball is formed by substantially enclosing the end of the bonding wire in a shroud or shield, flooding the shroud or shield and the end of the bonding wire with an inert gas, and generating a controlled pulse train of a preset count of electrical pulses for establishing arc discharge between the wire and the shroud or shield. The method permits precise control and metering of energy delivered by controlling the parameters of the pulses of the pulse train for melting and forming a ball of uniform quality without oxidation of the metal. Corresponding apparatus and circuitry are described which may be retrofitted into stock ball bonding machines or provide new machines.

Abstract: A process is described for fabricating spacers of a desired thickness of filters, the spacers to be used in separating the filter from an underlying image sensing device. The process includes the steps of forming a pattern of electrically conductive material on one surface of the filter, depositing dry resist to the desired thickness over all of the filter except on the electrically conductive pattern, depositing additional electrically conductive material on at least the electrically conductive pattern, and removing the dry resist.

Abstract: A method for forming a predetermined configuration of a film material comprises the steps of forming a layer of a first material on a surface, forming a layer of a second material on the first material wherein the first material has an etch rate greater than that of the second material when the first material and the second material are exposed to a common etchant, etching portions of the second material and underlying portions of the first material to expose portions of the surface, forming a layer of film material on the exposed portions of the surface, forming a layer of film material on the exposed portions of the surface and on the remaining portions of the second material, and removing the remaining portions of the first material such that the overlying second material and the film material thereon is also removed.

Abstract: MOS Control circuitry for incorporation on a microcomputer IC chip for assuring adequate power to maintain the data in an associated static random access memory. A rechargeable battery provides standby power, and the voltage level of the battery is compared with the microcomputer V.sub.cc supply. Whenever V.sub.cc drops below a predetermined level, such as the standby battery voltage level, the circuitry disconnects the V.sub.cc from the memory input power and replaces it with standby battery power. When V.sub.cc is returned to the system, a gate applies a trickle charge to the battery.

Abstract: A technique is disclosed for protecting integrated circuits from alpha particles. A central portion of a radiation resistant insulating substrate upon which electrically conductive leads are disposed is positioned in proximity to the integrated circuit. When the leads are electrically connected to the integrated circuit, the central portion of the substrate is allowed to remain over the integrated circuit to protect the integrated circuit. The insulating substrate typically comprises a polyimide film resistant to alpha particles.

Abstract: An electrically erasable programmable read-only memory (E.sup.2 PROM) is provided which utilizes an inhibit voltage applied to unselected word lines during writing to prevent writing in unselected rows. In the preferred embodiment, each memory cell of the E.sup.2 PROM array consists of a single floating gate field effect transistor. The E.sup.2 PROM of the present invention provides for row erasure and single bit writing.

Abstract: The lateral spacing between buried regions separated by oxide-isolation regions in a semiconductor structure is reduced to as little as one micron by performing a deep implantation of ions of the conductivity type opposite to that of the buried regions generally into portions of the substrate below the sites where the oxide-isolation regions are formed.

Abstract: A method for fabricating insulating regions in an integrated circuit structure is disclosed in which the insulating regions do not encroach upon the surrounding integrated circuit and in which a substantially planar surface across the top of the insulating material and the substrate is created. The method includes the steps of removing portions of the substrate wherever the insulating regions are to be formed, beginning to deposit insulating material across the substrate and in the openings created, and, while continuing to deposit insulating material simultaneously removing insulating material from generally horizontal surfaces and redepositing it on generally vertical surfaces of the substrate and the openings until a planar surface results.

Abstract: A low temperature LPCVD process for co-depositing metal and silicon to form metal silicide on a surface such as the surface of a semiconductor integrated circuit wherein the metal is selected from the group consisting of tungsten, molybdenum, tantalum and niobium. A reactor which contains the surface is maintained at a temperature of about 500.degree.-700.degree. C. The reactor is purged by the successive steps of introducing an inert gas into the reactor, introducing a reducing atmosphere into the reactor and introducing hydrogen chloride gas into the reactor. Silane is then introduced into the reactor such that a base layer of polysilicon is formed on the surface. Then, while maintaining silane introduction to the reactor, metal chloride vapor is simultaneously introduced into the reactor such that metal and silicon are co-deposited on the polysilicon as metal silicide.

Abstract: A video game apparatus for connection to a standard television set and including an electronics-containing console having a plurality of parameter selection buttons and a chute mechanism for receiving a replaceable cartridge-containing supplementary electronic circuitry, and a pair of hand controllers for providing player control inputs to the console electronics. Improved connector apparatus is associated with the chute mechanism to enable electrical connection to be made to a cartridge contained printed circuit board with a minimum of insertion force.

Abstract: Bromine-containing plasma is utilized to inhibit corrosion of aluminum or aluminum alloy films which have been etched utilizing a chlorinated plasma.

Abstract: A universe of probes is contained within a platen in a spaced-apart, substantially parallel relationship with one another with their tips pointing in the same direction. Each probe is free to move longitudinally between an advanced or test position and a retracted position. The platen nests into a wired personalizer having probe selector posts upstanding therein in a pattern corresponding to the pattern of test points on a circuit board to be tested. These posts serve to push up or advance the probes needed to test a particular type of circuit board. The posts are conductive and each is individually connected to the test system. The circuit board to be tested rests on a special deformable gasket so that its test points are suspended over and aligned with the advanced test probes. When the fixture is evacuated, the circuit board to be tested is drawn downwardly so that the test points on the board make electrical contact with the tips of the advanced probes.

Abstract: An alignment target for an electron-beam direct write system is formed on a wafer of semiconductor material. First, a layer of silicon oxide is formed on a surface of the wafer. Then a layer of silicon nitride is formed on the oxide. Next, an opening is etched in the nitride layer to expose a surface portion of the oxide. The surface portion of the oxide is then etched to form a hole in the oxide. The hole is formed such that the oxide layer is undercut beneath the nitride layer such that a cantilevered nitride overhang is formed around the perimeter of the hole. A layer of aluminum is then deposited over the nitride layer.

Abstract: Semiconductor memory devices are tested by using a special purpose computer which uses simple test patterns to determine the weakest bits of the device and then tests only these relatively few "weak bits" and structurally and operationally adjacent bits using highly complex test patterns to determine if the device is functioning properly. This procedure considerably reduces testing time over that required using prior art techniques.

Abstract: A method for statistically calibrating a digital-to-analog converter with an electronic test system. The digital-to-analog converter is excited with two state signals at each input bit which together represent a single signal with uniform amplitude probability with respect to time, and wherein each excitation signal is orthogonal with respect to all other excitation signals. The output of the digital-to-analogconverter is detected by an analog-to-digital converter which has been calibrated by premeasured weighting coefficients with respect to two-state orthogonal signals. The digital time domain output signals are then mapped into a transform domain to obtain weighting coefficients of each bit of the output response. Finally the transform domain weighting coefficients are weighted by the reciprocal of the premeasured weighting coefficients to obtain the unbiased weight of each bit of the digital-to-analog converter under test.

Abstract: A diffused resistor included in a Schottky device formed in a planar semiconductor material comprises a resistor diffusion formed in the surface of the material and a contact diffusion formed in the surface of the material, the configuration of the contact diffusion being essentially coincident with the shape of the resistor at the location at which ohmic contact to the resistor diffusion is made.

Abstract: A method for preventing the post-etch corrosion of aluminum or aluminum alloy film which has been etched utilizing chlorinated plasma wherein the etched film is exposed to fluorinated plasma.

Abstract: An electronic advance and ignition control system incorporating the advance utilizes a fixed advance threshold compared with amplitude of an RPM sensitive input waveform from a distributor in combination with a timing circuit, which establishes a predetermined RPM rate above which the advance operates. The electronic advance accurately duplicates the function of conventional centrifugal and vacuum and advance retard mechanisms in controlling timing of an ignition coil drive signal. The electronic advance is provided as part of an ignition control integrated circuit which can operate in a stand alone mode or share control of the ignition system with a microprocessor through interface circuits also forming part of the integrated circuit.

Abstract: High-speed testing circuitry which, when coupled to one terminal of a multi-terminal electronic device, such as an integrated circuit, can either supply test stimuli signals up to a frequency of 30 MHz, receive output signals produced by the device under test in response to test stimuli signals applied by associated test circuits and compare these signals against computer predicted signals, or provide for parametric testing of the device. .Iadd.