Abstract: Provided are a power module having a stacked flip-chip and a method of fabricating the power module. The power module includes a lead frame; a control device part including a control device chip; a power device part including a power device chip and being electrically connected to the lead frame; and an interconnecting substrate of which the control and power device parts are respectively disposed at upper and lower portions, and each of the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method.

Abstract: Disclosed are a load/charger detection circuit, a battery management system comprising the same and a driving method thereof. The load/charger detection circuit includes a current source; a current mirror connected to the current source to copy a current of the current mirror; at least two resistors connected between a first terminal providing a corresponding voltage to a charger or a load and a power supply; and a zener diode connected between the first terminal and the current mirror.

Abstract: The present invention relates to an LED emitting device. The LED emitting device includes: a converter converting an input voltage according to a switching operation of a power source switch to generate at least two output voltages; an LED panel unit including a plurality of LED channels having a plurality of LEDs; a micom board operated by a first output voltage among the at least two output voltages to control the operation of the LED emitting device; a regulator converting a second output voltage among the at least two output voltages into a voltage suitable for the operation of the LED panel unit; and a multi-channel control unit controlling an operation of the regulator according to a lowest minimum voltage among the voltages of a plurality of LED channels and receiving the first output voltage to generate a first feedback voltage VF1.

Abstract: A battery management system and a driving method are provided. The battery management system performs a bleeding operation at a moment that a voltage of each cell becomes a reference voltage during an initial charging operation to smoothly change a slope of a charge voltage. Accordingly, the charging time of the cell initially charging at the low voltage is increased, thereby reducing the entire cell balancing period.

Abstract: Exemplary embodiments of the present invention relate to an under-voltage lockout circuit, and a switching control circuit and a power supply including the same. The under-voltage lockout circuit according to an embodiment of the invention includes a first under-voltage lockout circuit comparing a driving voltage with a first reference voltage and a second under-voltage lockout circuit generating an under-voltage lockout signal based on a result of the comparison between the driving voltage and the second reference voltage. The first under-voltage lockout circuit stops operation of the second under-voltage lockout circuit when the driving voltage is lower than the first reference voltage and operates the second under-voltage lockout circuit when the driving voltage is higher than the first reference voltage. Power consumption of the first under-voltage lockout circuit is limited by a first current that generates the first reference voltage.

Abstract: A cable compensation circuit compensates a voltage drop in a cable coupled between a power supply and a load. The cable compensation circuit includes: a node where a voltage that depends on an input voltage of the power supply during a turn-on period of a power switch of the power supply and depends on an output voltage of the power supply during a turn-off period of the power switch is generated; a sensing RC filter generating a sense voltage that depends on a diode current by filtering the voltage of the node; and an averaging RC filter generating an average voltage by averaging the sense voltage.

Abstract: A battery management circuit and a battery management system including the same are provided. The battery management circuit is coupled to a plurality of battery cells, controls an input of a first pin to correspond to an input of a second pin, and determines a level of a receiving current based on a receiving signal that is input through the first pin. The battery management circuit includes a gate driving circuit including an on-transistor and an off-transistor in which a gate signal that is generated based on the receiving signal is input to a gate. A power supply voltage that is supplied from the plurality of battery cells is coupled to the second pin.

Abstract: An apparatus for driving an LED device having a plurality of LED channels is disclosed. Each LED channel has a plurality of LEDs connected in series. A power converter converts an input voltage into an output voltage and outputs the output voltage to an output terminal that is connected to first terminals of the plurality of LED channels. A plurality of current controllers are connected to second terminals of the plurality of LED channels, respectively. Each current controller controls a current of a corresponding LED channel. A detection controller determines a detection time based on voltages of the second terminals of the plurality of LED channels. A state detector detects the open-circuited states of the plurality of LED channels based on voltages of the second terminals of the plurality of LED channels at the detection time.

Abstract: The present invention relates to a switch driving circuit and a driving method thereof that are capable of preventing hard switching. The present invention includes: a dead time controller generating an high-side switching driver controlling signal and a low-side switching driver controlling signal controlling the switching operation of the high-side switch and the low-side switch according to a dead time controlling signal; and a phase detector detecting a phase of a resonance current flowing into the second power voltage terminal to generate a phase information signal, wherein one of the high-side switch driver controlling signal and a signal corresponding thereto, and the phase information signal are compared, and if the turn-on time of the high-side switch is later than the phase change of the resonance current, the dead time is controlled for the turn-on time of the high-side switch to advance the phase change of the resonance current.

Abstract: A power semiconductor device includes: a drain region of a first conductive type; a drift region of a first conductive type formed on the drain region; a first body region of a second conductive type formed below an upper surface of the drift region; a second body region of a second conductive type formed below the upper surface of the drift region and in the first body region; a third body region of a second conductive type formed by protruding downwards from a lower end of the first body region; a source region of a first conductive type formed below the upper surface of the drift region and in the first body region; and a gate insulating layer formed on channel regions of the first body region and on the drift region between the first body regions.

Abstract: The present invention relates to an LED emitting device and a driving method thereof including at least two LED channels. If a power source voltage supplied to an LED emitting device reaches a predetermined threshold voltage, the power source voltage is maintained as a threshold voltage during an overvoltage regulation period.

Abstract: Provided is a semiconductor package having a power device and methods of fabricating the same. The semiconductor package includes a lead frame, a polymer layer component on the lead frame, a metal layer component on the polymer layer component, and a semiconductor chip on the metal layer component. The polymer layer component may include a material formed by adding alumina Al2O3, an aluminum nitride (AlN), or a boron nitride BN to an epoxy resin. The polymer layer component may have high thermal conductivity and good electric insulating characteristics.

Abstract: Exemplary embodiments relate to a protection circuit, a switch circuit, and a power supply device including the same. The protection circuit includes: a detection circuit that generates a detection voltage that is increased by fluctuation of a comparison voltage; and an SCR (Silicon-Controlled Rectifier Thyristor) that includes a gate where the detection voltage is inputted, an anode electrically connected to a power voltage, and a cathode connected to a predetermined reference voltage, which is turned on when the detection voltage is inputted in the gate, and is turned off when a current does not flow to the anode.

Abstract: A bidirectional interface circuit includes a first current mirror circuit that copies a first reference current to generate a first current sunk from a first output terminal, a second current mirror circuit that copies a second reference current to generate a second current sunk from a second output terminal, an interception switch that is connected between the first output terminal and the second output terminal, a first comparator that outputs an upper state signal based on a comparison result of a voltage of the first output terminal and a first threshold voltage, a third current mirror circuit that copies one of a third reference current and a fourth reference current to supply a third current flowing to a third output terminal, and a second comparator that outputs a lower state signal based on a comparison result of a voltage of the second output terminal and a second threshold voltage.

Abstract: A method of fabricating a high-voltage semiconductor device includes the following steps: providing a semiconductor layer; forming a plurality of trenches in the semiconductor layer to define a plurality of pillars of a first conductivity type in the semiconductor layer between adjacent trenches, wherein the trenches extend from a top surface of the semiconductor layer toward a bottom surface of the semiconductor layer; forming a charge compensation layer of a second conductivity type over at least sidewalls of each trench to a predetermined thickness thereby forming a groove in each trench; and substantially filling each groove with a charge compensation plug of the first conductivity type.

Abstract: The present invention relates to a switch control circuit that controls a switching operation of a power switch circuit that includes cascode-coupled first and second transistors. A switch control circuit includes a first zener diode coupled between a gate of the first transistor and a first end of a capacitor supplying a power voltage and a second zener diode coupled to a gate and a source of the first transistor, and a first resistor coupled between the first zener diode and the second zener diode.

Abstract: A synchronous rectifier network unit and synchronous rectifying method. The synchronous rectifier network unit includes a first body diode to which a first current flows at a first time when the first current flows to a first coil, and a first transistor which is turned on after the first body diode is conducted, and to which the first current flows, and it rectifies the first current by differently controlling the turn-off time of the first transistor according to the first current.

Abstract: A power supply includes an input filter and a discharging device. The input filter includes a capacitor to which an AC power source is provided. The discharging device rectifies and samples the AC power source. The discharging device generates a reference voltage according to a peak voltage of a generated sampling signal, generates an AC power source cutoff detection signal according to a comparison signal generated by comparing the sampling signal and a reference voltage, and discharges the capacitor through a discharging resistor according to the AC power source cutoff detection signal.

Abstract: The present invention relates to a switch control device, a power supply device, and a switch control method. A switch control device controls a switching operation of a power switch by using a feedback voltage of an output voltage. In detail, the switch control device generates the feedback current according to the feedback voltage and the feedback signal corresponding to the feedback voltage by using the feedback current. The switch control device compares the sensing signal corresponding to the drain current flowing to the power switch and the feedback signal, and turns off the power switch according to the comparison result. The switch control device increases the feedback gain rather than the feedback current during the gain compensation period after a predetermined gain compensation period, and the gain compensation period is longer than a soft start period in which the output voltage is gradually increased.

Abstract: Provided is a power semiconductor device including a guard ring region to protect control devices. The power semiconductor device includes a semiconductor body layer extending over a semiconductor substrate of a first conductivity type. The semiconductor body layer has a second conductivity type opposite the first conductivity type. A well of the first conductivity type extends in the semiconductor body layer and is configured to be electrically insulated from the semiconductor substrate. At least one control device is formed in the well, where the control device comprises at least one of PN junction. A guard ring region of the first conductivity type is laterally spaced from but surrounds the well. The guard ring region together with the semiconductor substrate and the semiconductor body layer form a parasitic bipolar transistor, and the guard ring region functions as a collector of the parasitic bipolar transistor.