Abstract: Provided are a power device package coupled to a heat sink using a bolt and a semiconductor package mold for fabricating the same. The power device package includes: a substrate; at least one power device mounted on the substrate; a mold member sealing the substrate and the power device; and at least one bushing member fixed to the mold member to provide a through hole for a bolt member for coupling a heat sink to the mold member.

Abstract: The present invention relates to a driving device. The driving device according to the present invention includes a main transistor that supplies a current to a load by using a power supply, an auxiliary transistor that drops a predetermined voltage of the voltage of the power supply and transmits the dropped voltage to the main transistor in a turn-on state, and a bypass switch that transmits the voltage of the power supply to the main transistor when the auxiliary transistor is turned off.

Abstract: A converter is provided including: a first switch; an energy transmitting element for converting input energy into output energy according to the switching of the first switch; and a switching controller for detecting a time when a voltage between a first terminal and a second terminal of the first switch reaches a valley of a resonance waveform, and actuating the first switch corresponding to one of the detected valleys of the resonance waveform. The switching controller includes: a valley detector for changing the state of the output signal whenever a voltage between a first terminal and a second terminal of the first switch reaches a valley of the resonance waveform; and a PWM controller for actuating the first switch corresponding to an output signal of the valley detector.

Abstract: The present invention relates to a switch control device and a converter including the same. According to an exemplary embodiment of the present invention, the switch control device includes a PWM controller for forcing a power switch to turn on when the power switch is turned off during a predetermined period, a current sensor for determining whether a current flows through the power switch, and a conditional counter for determining that an input voltage is input to a power transmission element by using a sense result of the current sensor and a number of times that the PWM controller turns on the power switch by force.

Abstract: Provided are a semiconductor device including a source/drain and a gate formed using a doped polysilicon process, and a method of fabricating the semiconductor device. The method comprises: forming a gate insulating layer on a part of an active region on a first conductivity type epitaxial layer; forming a conductive layer on the epitaxial layer; implanting high concentration impurities of a second conductivity type a first portion of the conductive layer on the gate insulating layer and second portions of the conductive layer on both sides of the first insulating layer; patterning the conductive layer; forming a second insulating layer on the epitaxial layer and high concentration impurity regions of the second conductivity type below the second conductive pattern; and implanting low-concentration impurities of the second conductivity type into the epitaxial layer between a gate structure and the high concentration impurity regions.

Abstract: The present invention relates to a converter and a driving method thereof. The converter includes a switch controller that controls switching operation of a master switch and a slave switch. The switch controller detects a center point of one switching operation period of the master switch by using an internal triangular wave having a period that is the same as that of the one switching operation period, and starts the switching operation of the slave switch at the detected point. The internal triangular wave signal has a waveform that varies within one period, and detects a crossing point of an average value of the internal triangular wave and the internal triangular wave as a center point of one switching operation period of the master switch.

Abstract: Disclosed is a power semiconductor device including a bootstrap circuit. The power semiconductor device includes a high voltage unit that provides a high voltage control signal so that a high voltage is output; a low voltage unit that provides a low voltage control signal so that a ground voltage is output, and is spaced apart from the high voltage unit; a charge enable unit that is electrically connected to the low voltage unit and charges a bootstrap capacitor for supplying power to the high voltage unit when the high voltage is output, when the ground voltage is output; and a high voltage cut-off unit that cuts off the high voltage when the high voltage is output so that the high voltage is not applied to the charge enable unit, and includes a first terminal electrically connected to the charge enable unit and a second terminal electrically connected to the high voltage unit.

Abstract: A superjunction semiconductor device includes an edge p pillar, an active region, and a termination region. The edge p pillar has a rectangular ring shape with rounded corners. The edge p pillar has an outer region surrounding the active region and an inner region on in the sides of the active region. The active region has active p pillars and active n pillars having vertical stripe shapes. The active p pillars and the active n pillars are alternately arranged horizontally in the active region. The termination region includes termination n pillars and termination p pillars alternately arranged around the edge p pillar.

Abstract: The present invention relates to an electrostatic discharge diode. The electrostatic discharge diode according to exemplary embodiment of the present invention includes: an N-type well formed on a substrate; an n? region formed on the N-type well; a plurality of p? regions penetrated and formed in the n? region; a plurality of n+ regions penetrated and formed in a first layer in which the n? region and a plurality of the p? regions are formed; a plurality of n+ regions penetrated and formed in a first layer in which the n? region and a plurality of the p? regions are formed; and a plurality of p+ regions penetrated and formed in the first layer, wherein a first n+ region among a plurality of the n+ regions and a first p+ region corresponding to the first n+ region are penetrated and formed in each other region of the corresponding first p? region among a plurality of the p? regions.

Abstract: Disclosed is a switch driving circuit for controlling the switching operation of a switch. The switch driving circuit includes a driver generating a normal gate signal for controlling the switching operation of the switch, and a gate signal correction circuit comparing the normal gate signal with a gate signal applied to a gate electrode of the switch so as to correct the gate signal in accordance with the comparison.

Abstract: Provided are a power device package, which can be made compact by vertically stacking substrates on which semiconductor chips are mounted, and a method of fabricating the power device package.

Abstract: The present invention relates to a frequency modulation device and a switching mode power supply using the frequency modulation device. To prevent electro-magnetic interference (EMI), it is required to slightly vary a switching operation frequency in an SMPS operation. In some embodiments, at least one first signal having a predetermined cycle is generated, a second signal corresponding to a level of a first signal is generated at a turn-off time of a switch, a first reference voltage having at least two different levels is generated according to the second signal, and an oscillator signal for increasing along a first slope during a first period and decreasing along a second slope during a second period between the first reference voltage and a second reference voltage having a level that is different from the first reference voltage is generated.

Abstract: The present invention relates to a diagnostic device and a lamp ballast circuit. The lamp ballast circuit includes a first power switch, a second power switch, a lamp driven according to switching operations of the first and second power switches, a controller for controlling the switching operations of the first and second power switches, and a diagnostic device. The diagnostic device senses a voltage waveform applied to the lamp to determine an end of lamp life (EOLL) condition and an over-voltage, senses a filament voltage of the lamp to determine a filament connection state of the lamp, and determines an over-voltage of a voltage applied to the controller.

Abstract: The present invention relates to an LED light emitting device and a driving method, and discloses a technology that may improve a slew rate of a channel current flowing through an LED channel when driving with a pulse width modulation method. For this, the present invention includes an LED channel consisting of a plurality of LED elements that are consecutively and serially connected, a current control switch that is connected to the end of the LED channel and performs a switching operation, and an operational amplifier that controls the switching operation of the current control switch according to a pulse width modulation signal. The LED driver samples an output voltage at the operational amplifier when the pulse width modulation signal is in an on state, and maintains the output voltage of the operational amplifier when the pulse width modulation signal is in an off state.

Abstract: An inverter driver controls an inverter that supplies driving voltages to a plurality of discharge lamps. The inverter driver senses the abnormal operation of the plurality of discharge lamps based on a plurality of first feedback voltages corresponding to the plurality of driving voltages supplied to the discharge lamps and a plurality of second feedback voltages corresponding to the current flowing through the plurality of discharge lamps. The inverter driver is formed in a single integrated circuit.

Abstract: Disclosed is an auto-restart circuit and auto-restart method. A main integrated circuit (IC) of a main stage controls a switching operation of at least one power switch. The auto-restart circuit for restarting the main IC detects a switching state of the at least one power switch and detects the state of the main IC. The auto-restart circuit cuts off an external power source voltage supply to the main IC or supplies the external power source voltage to the main IC according to switching state and the state of the main IC.

Abstract: The present invention relates to a switch controlling apparatus. The switch controlling apparatus controls a main switch by using a first signal that corresponds to a current flowing to the main switch. The switch controlling apparatus includes a PWM controller for generating a control signal to control turning on/off of the main switch by using the first signal and a clock signal, and a TSD unit for changing the control signal corresponding to heat generated from the main switch. The TSD unit changes a response speed for the heat of the main switch by using the clock signal and the control signal.

Abstract: The present invention relates to an abnormal switching monitoring device and method. A time point when a high-side switch in which a first electrode receives an input voltage is turned on, a time point when a low-side switch that is connected to a second electrode of the high-side switch is turned on, a time point when a charge current begins to flow to a bootstrap circuit, and a time point when a charge current stops flowing to the bootstrap circuit are compared so as to determine whether or not non-zero voltage switching occurs. The bootstrap circuit supplies an operating current to a gate driver controlling a switching operation of the high-side switch.

Abstract: A power converter according to the present invention includes a power supply unit, an output unit, and a switching controller. The power supply unit includes a primary coil of a transformer that receives an input voltage, a gate electrode, and a switch having a first electrode and a second electrode that is connected to the primary coil. The output unit includes a secondary coil of the transformer, and outputs an output voltage that is converted from the input voltage by the transformer. The switching controller includes a feedback terminal that receives a feedback voltage corresponding to the output voltage, generates a burst voltage by compensating the feedback voltage according to a maximum current value that can flow between the second electrode and the first electrode of the switch, determines whether to perform a burst mode operation according to the burst voltage, and transmits a gate signal according to performance of the burst mode operation to the gate electrode of the switch.

Abstract: Provided are a semiconductor package which is small in size but includes a large number of terminals disposed at intervals equal to or greater than a minimum pitch, and a method of fabricating the semiconductor package. The semiconductor package includes a semiconductor chip having a bottom surface on which a plurality of bumps are formed, redistribution layer patterns formed under the semiconductor chip and each including a first part electrically connected to at least one of the bumps and a second part electrically connected to the first part, an encapsulation layer surrounding at least a top surface of the semiconductor chip, and a patterned insulating layer formed below the redistribution layer patterns and exposing at least parts of the second parts of the redistribution layer patterns.