Abstract: The present invention provides a mechanism capable of reducing a polishing removal rate of polysilicon and further reducing defects (organic residues, for example) on a surface of polysilicon after polishing. The present invention is a polishing composition containing: abrasive grains; a removal rate inhibitor that reduces a polishing removal rate of polysilicon; and a defect reducing agent that reduces defects on a surface of polysilicon, wherein the removal rate inhibitor is a water-soluble polymer having a polyoxyalkylene chain, which has a number average molecular weight of 200 or more and 600 or less, and in which a content of a component with a molecular weight of 700 or more is more than 0% by mass and less than 1% by mass.

Abstract: An object is to provide a polishing composition in which the ratio of the polishing removal rate of a layer containing a nitrogen atom-silicon atom bond such as silicon nitride or the like to the polishing removal rate of a layer containing a silicon atom-oxygen atom bond such as silicon oxide or the like can be increased and stability is kept. A polishing composition for polishing an object to be polished, the polishing composition including an abrasive grains, an acid, and an aqueous carrier, in which the abrasive grains are colloidal silica having an organic acid immobilized on surfaces thereof, the number of silanol groups in the abrasive grains is 3.50/nm2 or less, a value obtained by dividing an average primary particle size (nm) of the abrasive grains by the number of silanol groups (/nm2) is 8.00 or more, and a pH is less than 6.0.

Abstract: Provided is an absorption method of an element belonging to periods 4 to 6 and groups 3 to 15 of the periodic table. The method includes: preparing mesoporous alumina that satisfies at least one of the following items: (1) a surface hydroxyl content is 3.5 mmol/g or more; (2) a low-temperature CO2 desorption amount in CO2 thermal desorption amount spectrometry is 5 ?mol/g or more; and (3) a low-temperature NH3 desorption amount in NH3 thermal desorption amount spectrometry is 25 ?mol/g or more; and bringing a liquid containing an absorption target element in contact with the mesoporous alumina to absorb the absorption target element in the mesoporous alumina. The absorption target element is at least one type selected from the group consisting of an element belonging to periods 4 to 6 and groups 3 to 15 of the periodic table.

Abstract: A method for producing a dispersion liquid containing colloidal silica particles according to the present disclosure includes an ion exchange step of bringing a liquid containing colloidal silica particles and hydrogen peroxide into contact with an ion exchange resin.

Abstract: Provided herein are means whereby an object to be polished can be polished at a high polishing removal rate and defects in the surface of the object to be polished after polishing can be reduced. Disclosed herein is a polishing composition containing water and alumina particles, wherein the alumina particles have a bimodal volume-based particle size distribution.

Abstract: The present disclosure provides a polishing composition which allows the polishing removal rate of a material having a silicon-silicon bond to be enhanced and which is also excellent in step elimination ability on an object to be polished including the material having a silicon-silicon bond.

Abstract: The present disclosure provides a polishing composition having excellent storage stability that shows little change in polishing removal rate even after long-term storage, can stably maintain polishing performance, and can suppress proliferation of viable bacteria. The present disclosure is a polishing composition contains: (A) abrasive grains; (B) a biocide; (C) a polishing removal rate improver for a material having a silicon-silicon bond; and (D) a polyoxyalkylene compound, wherein the component (B) is at least one selected from the group consisting of an isothiazolinone compound and a thiazolinone compound, and wherein the component (C) is a water-soluble polymer other than the component (D).

Abstract: The present disclosure provides a polishing composition which allows the polishing removal rate of a material having a silicon-silicon bond to be enhanced and which is also excellent in step height reduction ability on a polishing object including the material having a silicon-silicon bond. The present disclosure relates to a polishing composition including (A) a water-soluble polymer containing a lactam structure and (B) an amine compound, wherein the (B) component has 7 or more and less than 17 carbon atoms and a content mass ratio of the (B) component to the (A) component ((B) component/(A) component) is more than 1.

Abstract: The present disclosure provides a polishing composition excellent in the balance among an excellent unevenness elimination ability on an object to be polished, an enhancement in polishing removal rate of an object to be polished, and a defect reduction on a surface of a polished object. The present disclosure relates to a polishing composition containing (A) an amine compound having a heterocyclic structure containing two or more nitrogen atoms, and (B) a water-soluble polymer, in which the content mass ratio of the component (A) to the component (B) (component (A)/component (B)) is 1 or more, the polishing composition has a pH of 8 or more, and the polishing composition is substantially free of an abrasive grain.

Abstract: Disclosed herein is a method for producing a silica sol, including mixing continuously or intermittently a liquid (A) containing an alkaline catalyst, water, and a first organic solvent with a liquid (B) containing at least one of tetramethoxysilane or a condensate thereof, and a second organic solvent, wherein the mixing includes, after formation of silica particles in a mixed liquid, increasing a value of electrical conductivity of the mixed liquid.

Abstract: The present disclosure provides a polishing composition which has an excellent step elimination ability on an object to be polished, which enhances the ratio (selection ratio) of the polishing removal rate of a material having silicon-silicon bonds to the polishing removal rate of a material having silicon-nitrogen bonds, and which is also excellent in scratch reduction on a surface of a polished object to be polished. The present disclosure relates to a polishing composition containing (A) at least one selected from the group consisting of a water-soluble polymer having a lactam structure and a water-soluble polymer having a cellulose structure, and (B) an inorganic salt, wherein the electrical conductivity is 1 mS/cm or more and 50 mS/cm or less, the total concentration of sodium ions and potassium ions is 1000 ppm by mass or less, and the pH is 8 or more and 12 or less.

Abstract: Provided is a method of producing a polishing composition, the method allowing easy checking of a level of dissolution of a chelating agent during a production process. Provided is a method of producing a polishing composition for polishing a surface formed of a silicon material. The method of producing a polishing composition includes preparing a basic chelating agent-containing liquid containing a basic compound, water, and a chelating agent; and mixing a silica dispersion containing silica particles and water, and the chelating agent-containing liquid.

Abstract: It is an object of the present invention to provide a novel powder for thermal spraying capable of improving performance of an yttrium-aluminum composite oxide coating film.

Abstract: Provided is a technique for enhancing a uniformity of components in a thermal-sprayed coating. The herein disclosed powder for thermal spraying is a powder for thermal spraying that is used to form an electrode of a solid oxide fuel cell or a solid oxide electrolysis cell. This powder for thermal spraying has a peak within a range equal to or more than 0.

Abstract: The present invention provides a polishing composition capable of improving the surface quality of an object to be polished after polishing. The present disclosure relates to the polishing composition comprising (A) an abrasive, (B) Compound ? having a polyethylene oxide structure and a polypropylene oxide structure, (C) a water soluble polymer different from the Compound ?, (D) a basic compound, and (E) a dispersion medium, wherein (B) the Compound ? is contained in an amount of 0.0001 mass % or more relative to the total mass of the polishing composition, and the ratio of the total mass of (B) the Compound ? and (C) the water soluble polymer to the mass of (A) the abrasive, [{(B)+(C)}/(A)], is 0.058 or more and less than 0.150.

Abstract: The silicon carbide powder is a powder of silicon carbide having an ?-type crystal system, where the number of small corner portions among corner portions on a surface of a primary particle of silicon carbide constituting the powder of silicon carbide is 2.5 or less per one primary particle. The small corner portion is a corner portion, among corner portions present in a contour of the primary particle in a projection image of the primary particle, where twice a curvature radius of the corner portion is ? or less of a Heywood diameter of the projection image of the primary particle.

Abstract: Provided is a polishing composition with excellent machining capacity, and good cleaning property after polishing. A polishing composition containing abrasive grains, water, and a hydrophobic dispersing medium, wherein the hydrophobic dispersing medium contains at least one selected from the group consisting of normal paraffin hydrocarbons, isoparaffin hydrocarbons, naphthenic hydrocarbons, and terpene hydrocarbons, and has a flash point of 30° C. or more and 100° C. or less, or a vapor pressure at 20° C. of 0.004 kPa or more and 2 kPa or less.

Abstract: Means capable of sufficiently removing residues remaining on a surface of a polished object containing silicon nitride and at least one selected from the group consisting of silicon oxide and polysilicon is provided. A composition for surface treatment, comprising: a nitrogen-free nonionic polymer, a nitrogen-containing nonionic polymer, and an anionic polymer, wherein the nitrogen-free nonionic polymer has a weight-average molecular weight of less than 100,000, the ratio of a weight-average molecular weight of the nitrogen-containing nonionic polymer to the weight-average molecular weight of the nitrogen-free nonionic polymer (nitrogen-containing nonionic polymer/nitrogen-free nonionic polymer) is 0.1 or more and 10 or less, and the composition for surface treatment has a pH of less than 7.0.

Abstract: A polishing composition capable of increasing a polishing selectivity ratio of SiOC to silicon nitride, a production method of the polishing composition, a polishing method, and a manufacturing method of a semiconductor substrate are provided. The polishing composition contains abrasives having a zeta potential of ?5 mV or less, a cationic surfactant, a phosphonic acid-based chelating agent, and a cationic compound having a molecular weight of 300 or less.

Abstract: A polishing composition according to the present invention contains zirconia particles, a selectivity improver for improving a ratio of a polishing speed for an organic material (b) to a polishing speed for a material (a) having a metal-nitrogen bond, and a dispersing medium, wherein in a particle size distribution of the zirconia particles obtained by a laser diffraction/scattering method, a diameter (D50) of the particles when a cumulative volume of the particles from a fine particle side reaches 50% of a total volume of the particles is 5 nm or more and 150 nm or less, and a pH of the polishing composition is less than 7.