Abstract: Provided is a method that enables good cleaning of a polished substrate formed of a high-hardness material. Provided is a method of polishing and cleaning a substrate formed of a material having a Vickers hardness of 1500 Hv or more. The method includes: polishing a substrate to be polished using a polishing composition; and cleaning the polished substrate using a cleaner. The polishing composition contains a polishing auxiliary. Furthermore, the cleaner contains a surfactant.

Abstract: There is provided a method of producing anionically modified colloidal silica capable of polishing a silicon nitride film at a high speed and suppressing a polishing speed of a silicon oxide film. A method of producing anionically modified colloidal silica includes ion exchanging raw colloidal silica using an ion exchange resin (ion exchange step); and anionically modifying ion-exchanged raw colloidal silica to obtain anionically modified colloidal silica (modification step).

Abstract: To provide a polyvinyl alcohol composition effectively suppressed in generation of an aggregated product, in a method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition. A method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition, wherein the polyvinyl alcohol composition is obtained through an addition-in-liquid step of adding into the inside of any one solution of a first liquid containing polyvinyl alcohol and water and a second liquid other than the first liquid, the other liquid of the first liquid and the second liquid.

Abstract: Provided is an absorption method of an element belonging to periods 4 to 6 and groups 3 to 15 of the periodic table. The method includes: preparing mesoporous alumina that satisfies at least one of the following items: (1) a surface hydroxyl content is 3.5 mmol/g or more; (2) a low-temperature CO2 desorption amount in CO2 thermal desorption amount spectrometry is 5 µmol/g or more; and (3) a low-temperature NH3 desorption amount in NH3 thermal desorption amount spectrometry is 25 µmol/g or more; and bringing a liquid containing an absorption target element in contact with the mesoporous alumina to absorb the absorption target element in the mesoporous alumina. The absorption target element is at least one type selected from the group consisting of an element belonging to periods 4 to 6 and groups 3 to 15 of the periodic table.

Abstract: Solutions are disclosed for preventing the settling of an abrasive, while maintaining the polishing performance of a polishing composition. Solutions are disclosed for improving the redispersibility of an abrasive while maintaining the polishing performance. Polishing compositions for use in polishing a semiconductor substrate according to the present disclosure include an abrasive, a layered compound, and a dispersion medium.

Abstract: Provided is a means capable of polishing an organic material at a high polishing speed and reducing the number of scratches after polishing. The polishing composition of the present invention contains zirconia particles and a dispersing medium, in which the zirconia particles contain at least one of tetragonal zirconia and cubic zirconia, and an average secondary particle size of the zirconia particles is less than 80 nm.

Abstract: The present invention provides a means capable of further improving stability and washability under acidic conditions. The present invention is sulfonic acid-modified colloidal silica having an amount of sulfonic acid groups per 1 g of particles of 1.5 ?mol/g or more and 13.0 ?mol/g or less.

Abstract: A means capable of sufficiently removing residues remaining on the surface of a polished object is to be provided. The present invention relates to a surface treatment composition, containing components (A) to (C), and having pH of more than 7.0: the component (A): a quaternary nitrogen-containing onium salt compound having at least one of a linear or branched alkyl group having 7 or more carbon atoms and a linear or branched alkenyl group having 7 or more carbon atoms, the component (B): a nonionic polymer, the component (C): a buffer represented by a formula: A-COO—NH4+.

Abstract: Means capable of sufficiently removing residues remaining on a surface of a polished object containing silicon nitride and at least one selected from the group consisting of silicon oxide and polysilicon is provided. A composition for surface treatment, comprising: a nitrogen-free nonionic polymer, a nitrogen-containing nonionic polymer, and an anionic polymer, wherein the nitrogen-free nonionic polymer has a weight-average molecular weight of less than 100,000, the ratio of a weight-average molecular weight of the nitrogen-containing nonionic polymer to the weight-average molecular weight of the nitrogen-free nonionic polymer (nitrogen-containing nonionic polymer/nitrogen-free nonionic polymer) is 0.1 or more and 10 or less, and the composition for surface treatment has a pH of less than 7.0.

Abstract: The silicon carbide powder is a powder of silicon carbide having an ?-type crystal system, where the number of small corner portions among corner portions on a surface of a primary particle of silicon carbide constituting the powder of silicon carbide is 2.5 or less per one primary particle. The small corner portion is a corner portion, among corner portions present in a contour of the primary particle in a projection image of the primary particle, where twice a curvature radius of the corner portion is 1/5 or less of a Heywood diameter of the projection image of the primary particle.

Abstract: The present invention provides a method for producing an inorganic particle-containing slurry, by which the number of coarse particles can be sufficiently reduced. The present invention is a method for producing an inorganic particle-containing slurry, which comprises: a step of preparing an inorganic particle dispersion containing inorganic particles and a dispersing medium, and having a pH less than the isoelectric point of the inorganic particles; and a step of adding an alkaline compound to the inorganic particle dispersion in such a manner that the pH does not reach the isoelectric point of the inorganic particles.

Abstract: A means capable of sufficiently removing residues remaining on the surface of a polished object is to be provided. The present invention relates to a surface treatment composition, containing a component (A) and a component (B) and having pH of 8.0 or more: component (A): a polymer having a constituent unit having a quaternary nitrogen-containing onium salt or a constituent unit of a structure (X) below, component (B): a buffer represented by a formula: R—COO—NH4+.

Abstract: Provided is a means capable of sufficiently removing residues on a surface of an object to be polished while polishing the object to be polished at a moderate speed. Provided is a polishing composition containing: anionically-modified colloidal silica; a dispersing medium; an anionic water-soluble polymer which is a copolymer including a structural unit having a sulfonic acid group or a salt group thereof and a structural unit having a carboxy group or a salt group thereof; a polypropylene glycol having a weight average molecular weight of 200 or more and 700 or less; a nitrogen-free non-ionic polymer other than the polypropylene glycol having a weight average molecular weight of 200 or more and 700 or less; and a nitrogen-containing non-ionic polymer.

Abstract: An object of the present invention is to provide a polishing composition that can achieve both a high polishing removal rate and high surface quality. According to the present invention, provided is a polishing composition for polishing a material to be polished. The polishing composition contains sodium metavanadate, hydrogen peroxide, and silica abrasive. The content C1 of sodium metavanadate is 0.7% to 3.5% by weight, the content C2 of hydrogen peroxide is 0.3% to 3% by weight, and the content C3 of the silica abrasive is 12% to 50% by weight.

Abstract: The present invention provides a means capable of suppressing the formation of fine particles in a method for producing a silica sol.

Abstract: Provided is a white pigment for cosmetics capable of giving a cosmetic having an excellent performance smoothly applicable onto the skin. A white pigment for cosmetics of the present invention includes a titanium phosphate powder, the titanium phosphate powder includes crystal particles of titanium phosphate, and the titanium phosphate powder has an average friction coefficient (MIU) of less than 1.45.

Abstract: Provided are a dispersion for a silicon carbide sintered body having a small environmental load, high dispersibility, and excellent temporal stability, and a manufacturing method thereof. The dispersion is a dispersion for a silicon carbide sintered body, containing: silicon carbide particles; boron nitride particles; a resin having a hydroxyl group; and water, wherein the dispersion has a pH at 25° C. of less than or equal to 7.0, and the silicon carbide particles and the boron nitride particles have charges of the same sign. The dispersion is manufactured by a manufacturing method of a dispersion for a silicon carbide sintered body, including a mixing step of mixing a water dispersion containing silicon carbide particles, a water dispersion containing boron nitride particles, and an aqueous solution containing a resin having a hydroxyl group.

Abstract: A polishing method according to the present invention, includes polishing a polishing object containing a silicon material by using a polishing composition containing abrasive grains, a tri- or more polyvalent hydroxy compound and a dispersing medium and having pH of less than 6.0.

Abstract: To provide a powder material for additive layer manufacturing capable of molding a three-dimensional shaped molded article having less cracking or chipping and having high hardness and a method for manufacturing a molded article using the powder material. A powder material for additive layer manufacturing used to manufacture a three-dimensional shaped molded article by irradiation with a laser light or an electron beam contains cobalt, a first component containing one or more substances selected from the group consisting of vanadium carbide, niobium carbide, and molybdenum carbide, an optional additive component, and the balance of tungsten carbide. The content of the first component is 0.6% by mass or more and 5% by mass or less.

Abstract: An object of the present invention is to provide a new polishing composition that contributes to improving the quality of a device. There is provided a polishing composition containing: an abrasive grain having an organic acid immobilized on a surface thereof; a first water-soluble polymer having a sulfonic acid group or a group having a salt thereof, or a carboxyl group or a group having a salt thereof; a second water-soluble polymer different from the first water-soluble polymer; a nonionic surfactant; and an aqueous carrier, wherein the polishing composition is used for polishing an object to be polished.