Abstract: There is provided a polishing composition capable of improving a polishing removal rate of a certain film type and suppressing a polishing removal rate of another certain film type, that is, capable of controlling a so-called polishing selection ratio, in an object to be polished containing two or more different film types. The present invention relates to a polishing composition containing abrasive grains, an acid, a polishing inhibitor, and an oxidizing agent, in which the abrasive grains have a positive zeta potential, the acid is an organic acid, the polishing inhibitor contains a nonionic surfactant, the oxidizing agent is hydrogen peroxide, and a pH of the polishing composition is 2 or more and 4 or less.

Abstract: To provide a polishing composition that can polish titanium nitride film at a higher polishing removal rate with respect to the polishing removal rate for silicon oxide film (specifically, a high selection ratio expressed as polishing removal rate for titanium nitride film/polishing removal rate for silicon oxide film) and that has high dispersion stability. A polishing composition containing abrasive grains, an acid, a surfactant, and an oxidizing agent, wherein the abrasive grains have a positive zeta potential, the acid is an inorganic acid, the surfactant contains a compound having a polypropylene glycol structure, the oxidizing agent is hydrogen peroxide, and the pH is 2 or more and 4 or less.

Abstract: To provide a means capable of sufficiently removing organic residues present on the surface of a polishing object after polishing containing silicon oxide or polysilicon. A surface treatment composition contains a polymer having a constituent unit represented by Formula (1) below and water and is used for treating the surface of a polishing object after polishing, in which, in Formula (1) above, R1 is a hydrocarbon group having 1 to 5 carbon atoms and R2 is a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms.

Abstract: The present invention provides a method for producing an inorganic particle-containing slurry, by which the number of coarse particles can be sufficiently reduced. The present invention is a method for producing an inorganic particle-containing slurry, which comprises: a step of preparing an inorganic particle dispersion containing inorganic particles and a dispersing medium, and having a pH less than the isoelectric point of the inorganic particles; and a step of adding an alkaline compound to the inorganic particle dispersion in such a manner that the pH does not reach the isoelectric point of the inorganic particles.

Abstract: Provided is a means capable of sufficiently removing residues on a surface of an object to be polished while polishing the object to be polished at a moderate speed. Provided is a polishing composition containing: anionically-modified colloidal silica; a dispersing medium; an anionic water-soluble polymer which is a copolymer including a structural unit having a sulfonic acid group or a salt group thereof and a structural unit having a carboxy group or a salt group thereof; a polypropylene glycol having a weight average molecular weight of 200 or more and 700 or less; a nitrogen-free non-ionic polymer other than the polypropylene glycol having a weight average molecular weight of 200 or more and 700 or less; and a nitrogen-containing non-ionic polymer.

Abstract: To provide a polyvinyl alcohol composition effectively suppressed in generation of an aggregated product, in a method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition. A method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition, wherein the polyvinyl alcohol composition is obtained through an addition-in-liquid step of adding into the inside of any one solution of a first liquid containing polyvinyl alcohol and water and a second liquid other than the first liquid, the other liquid of the first liquid and the second liquid.

Abstract: Provided is a method for producing a polishing composition of which filterability is good and which can reduce surface defects of an object to be polished. A method for producing a polishing composition containing a modified polyvinyl alcohol composition containing a modified polyvinyl alcohol or a derivative thereof and water includes a heat retention step of retaining the modified polyvinyl alcohol composition at a solution temperature of 30° C. or higher and lower than 60° C., in which the heat retention step is performed such that a parameter A is 2.0 or more.

Abstract: Provided is a technology that allows reduction in risk of dispersion of a powder material by application of energy in a process of additive manufacturing. The powder material for additive manufacturing disclosed herein contains a first material constituted with ceramics, and a second material constituted with at least one of magnesium (Mg), zinc (Zn), molybdenum (Mo), tungsten (W), copper (Cu), aluminum (Al), carbon (C), and silicon (Si). The powder material is constituted with composite particles including a mixture of the first material and the second material.

Abstract: Provided is a means capable of polishing an organic material at a high polishing speed and reducing the number of scratches after polishing. The polishing composition of the present invention contains zirconia particles and a dispersing medium, in which the zirconia particles contain at least one of tetragonal zirconia and cubic zirconia, and an average secondary particle size of the zirconia particles is less than 80 nm.

Abstract: A method for manufacturing a silica sol according to an embodiment of the present invention includes: a step of preparing a silica sol reaction liquid by hydrolyzing and polycondensing an alkoxysilane or a condensate thereof using an alkali catalyst in a solvent; and at least one of a step of concentrating the silica sol reaction liquid by an ultrasonic atomization separation method and a step of replacing the silica sol reaction liquid with water by the ultrasonic atomization separation method.

Abstract: A method for increasing the specific surface area of titanium phosphate plate-shaped particles of this invention includes: obtaining a liquid in a state where a powder containing titanium phosphate plate-shaped particles is dispersed in an aqueous alkaline solution.

Abstract: In terms of composition containing a cellulose derivative, provided are a polishing composition, a substrate protective agent, and a method of producing the same that are effective for reducing post-polishing surface defects. Provided is a method of producing a polishing composition containing an abrasive, a basic compound, a cellulose derivative, and a surfactant. The method includes a step (A) of dissolving a material cellulose derivative in a solvent to prepare a material cellulose derivative solution; and the following steps: a step (B1) of heating the material cellulose derivative solution and a step (B2) of adding a material surfactant to the material cellulose derivative solution that underwent the step (B1); or a step (C1) of adding a material surfactant to the material cellulose derivative solution to prepare an additive mixture liquid and a step (C2) of heating the additive mixture liquid.

Abstract: The present disclosure provides means that can achieve a high polishing removal rate of a material having a silicon-silicon bond and can satisfy a ratio of a polishing removal rate of the material having a silicon-silicon bond to a polishing removal rate of a material having an oxygen-silicon bond within a good range, when the pH of a polishing composition is less than 7. The present disclosure relates to a polishing composition containing the following component (A) and the following component (B) and having a pH of less than 7; component (A): surface-modified silica particles containing silica particles and a surface-modifying group that modifies a surface of the silica particles and contains a polyoxyalkylene chain having a weight average molecular weight of 80 or more and 7,000 or less; and component (B): water.

Abstract: Provided is a polishing composition that can polish a carbon film at a high polishing removal rate, and can polish the carbon film at a high polishing removal rate with respect to a polishing removal rate of a silicon nitride film. A polishing composition, containing an anion-modified silica particle; a nonionic surfactant; and an anionic polymer, wherein a pH of the polishing composition is 1.0 or more and 5.0 or less.

Abstract: According to the present invention, a moderately high polishing speed for a specific material and appropriate ratio of polishing speeds between two or more different materials are achieved in polishing using a polishing composition. The present invention relates to a polishing composition comprising abrasive grains, a water-soluble polymer having no alcoholic hydroxyl group in a side chain, a polyvalent carboxylic acid (salt), and an oxidizing agent, and having a pH of less than 6.

Abstract: Polishing compositions and methods are provided which enable barrier polishing with improved flatness for patterned substrates comprising copper, tantalum, and TEOS. Provided are polishing compositions comprising: an abrasive with a mean particle size (MPS) of 100 nm to 150 nm; a phosphate surfactant; an electronic conductivity (EC) controller; an organic acid; and a water-soluble polymer, wherein a ratio of a concentration of the abrasive to a concentration of the phosphate surfactant is greater than or equal to 50 and less than or equal to 1040.

Abstract: There are provided a post-CMP cleaning composition and a post-CMP cleaning method, which can more efficiently reduce cerium remaining on a surface of polished objects to be polished. The post-CMP cleaning composition is used for cleaning polished objects to be polished as objects to be polished, which has been subjected to a chemical mechanical polishing (CMP) using a polishing composition containing a cerium compound as abrasives, the post-CMP cleaning composition containing silica and a water-soluble polymer. A concentration of the silica is 0.5% by mass or more and 10% by mass or less.

Abstract: Provided is a means for sufficiently removing residues remaining on the surface of a polished object and reducing the surface roughness of the polished object. The present invention relates to a surface treatment composition containing components (A) to (C), and having pH of more than 7.0: the component (A): a cyclic amine compound having a nitrogen-containing non-aromatic heterocyclic ring, the component (B): a nonionic polymer, the component (C): a buffer represented by a formula: A-COO?NH4+ wherein A is an alkyl group having from 1 to 10 carbon atoms, or a phenyl group.

Abstract: Provided herein are CMP compositions, and methods for polishing surfaces comprising amorphous carbon, spin-on carbon (SoC), and/or diamond like carbon (DLC) films. The CMP compositions of the present disclosure contain at least one abrasive having zirconia particles and may also contain at least one metal-containing oxidizer.

Abstract: The present disclosure provides a means by which a good polishing removal rate for an object to be polished including a silicon-containing material can be realized while at the same time reducing scratches on the surface of the object to be polished that has been polished. The present disclosure is a polishing composition containing: abrasive grains having a zeta potential of ?5 mV or less; a first polyoxyalkylene compound having a weight average molecular weight of 100 or more and 900 or less; and a second polyoxyalkylene compound having an oxyalkylene unit different from that of the first polyoxyalkylene compound and having a weight average molecular weight of 100 or more and 900 or less, wherein the polishing composition has a pH of less than 7.