Abstract: Provided is a polishing composition which contains a water-soluble polymer and is suitable for reducing LPDs. The polishing composition provided in this application includes an abrasive, a water-soluble polymer, and a basic compound. In the polishing composition, the content of a reaction product of a polymerization initiator and a polymerization inhibitor is 0.1 ppb or less of the polishing composition on a weight basis.

Abstract: Provided is a powder having a high transmittance that is suitable as a filler for optical materials and resins for which transparency is demanded. The powder of the present invention includes crystalline plate-shaped titanium phosphate particles, in which a ratio of particles having a particle diameter of 0.52 ?m or more to 0.87 ?m or less is 7.0% by mass or less.

Abstract: Provided is a polishing pad having a high following performance even when a surface to be polished is a curved face. A polishing pad (1) in an embodiment of the present invention includes a polishing layer (2) having a polishing face (21) and a support layer (3) that is formed from a material softer than the polishing layer (2) and is fixed to a face (22) opposite to the polishing face (21) of the polishing layer (2). The support layer (3) has a hardness of not less than 30 and less than 70 in terms of F hardness.

Abstract: Provided is a means for sufficiently removing residues remaining on the surface of a polished object and reducing the surface roughness of the polished object. The present invention relates to a surface treatment composition containing components (A) to (C), and having pH of more than 7.0: the component (A): a cyclic amine compound having a nitrogen-containing non-aromatic heterocyclic ring, the component (B): a nonionic polymer, the component (C): a buffer represented by a formula: A-COO?NH4+ wherein A is an alkyl group having from 1 to 10 carbon atoms, or a phenyl group.

Abstract: Provided is a method for producing a silica sol. A gel-like material cannot be generated and highly associated silica particles can be obtained. A method for producing a silica sol comprises a step of making a reaction liquid by mixing liquid (A) comprising an alkaline catalyst, water, a first organic solvent and silica particles for association with liquid (B) comprising at least one of tetramethoxysilane and a condensate thereof and a second organic solvent, wherein during the mixing, an addition rate of the liquid (B) is 8.5×10?4 to 5.6×10?3 (mol of silicon atoms in liquid (B)/mol of water in liquid (A)) per minute.

Abstract: The present invention provides means capable of achieving both a reduction in the number of defects and a reduction in haze in an object to be polished after polishing at a high level in a method of polishing the object to be polished containing a material having a silicon-silicon bond. The present invention relates to a method of polishing an object to be polished containing a material having a silicon-silicon bond, and the polishing method includes a final polishing step Pf.

Abstract: The present invention is to provide a means for reducing surface roughness (Ra) while maintaining a high polishing rate in polishing of an object to be polished containing a resin and a filler. A polishing composition of the present invention comprises alumina particles, colloidal silica particles, and a dispersing medium for use in polishing an object to be polished containing a resin and a filler, in which the alumina particles have an average particle size of less than 2.8 ?m, and the colloidal silica particles have an average particle size less than the average particle size of the alumina particles.

Abstract: Provided is a soft focus filler excellent in both transmittance and haze. The soft focus filler of the present invention includes a powder including plate-shaped crystal particles of titanium phosphate.

Abstract: Provided are a polishing method that can be commonly applied to different types of silicon substrates varying in resistivity as well as a polishing composition set used in the polishing method. The silicon substrate polishing method provided by this invention comprises supplying a first polishing slurry S1 and a second polishing slurry S2 to a silicon substrate to be polished, switching them in this order midway through polishing the silicon substrate. The first polishing slurry S1 comprises an abrasive A1 and a water-soluble polymer P1. The polishing removal rate of the first polishing slurry S1 is higher than that of the second polishing slurry S2.

Abstract: There is provided a thermal spray coating which has excellent plasma erosion resistance, which protects members of a plasma etching device from plasma erosion over a long period of term, and which can contribute to the stable production of devices and a longer life of members. The thermal spray material which is one aspect of this invention contains a composite compound containing a rare earth fluoride in the proportion of 40 mol % or more and 80 mol % or less, a magnesium fluoride in the proportion of 10 mol % or more and 40 mol % or less, and a calcium fluoride in the proportion of 0 mol % or more and 40 mol % or less.

Abstract: The present invention is to provide a means for reducing residual abrasive grains on a surface of an object to be polished after polishing. The polishing composition of the present invention comprises abrasive grains and a dispersing medium, wherein the abrasive grains are silica particles having an average particle size (D50) of more than 1.0 ?m and a circularity of primary particles of 0.90 or more.

Abstract: A titanium phosphate powder containing plate-like particles with a reduced content ratio of byproducts other than the plate-like particles, and exhibiting crystallinity of titanium phosphate represented by a chemical formula Ti(HPO4)2·nH2O (0?n?1) is provided in the present disclosure. The present disclosure relates to a method for producing a titanium phosphate powder exhibiting crystallinity of titanium phosphate represented by a chemical formula Ti(HPO4)2·nH2O (0?n?1), and containing plate-like particles, the method comprising putting an acidic raw material aqueous solution containing phosphorus and titanium in a sealed vessel, and storing the sealed vessel containing the raw material aqueous solution for a period of 2 hours or more, with the ambient temperature of the sealed vessel maintained under a constant temperature condition within a range of 40° C. or more and less than 100° C.

Abstract: Provided is a means capable of sufficiently removing organic residues on the surface of an object to be polished after polishing. A surface treatment composition includes a polymer having a building block represented by Formula (1) in [Chemical Formula 1], a chelating agent, and water and is used to treat the surface of an object to be polished after polishing, and the chelating agent has at least one of a phosphonic acid group and a carboxylic acid group. In Formula (1), R1 is a hydrocarbon group having 1 to 5 carbon atoms; and R2 is a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms.

Abstract: Provided is a white pigment for cosmetics, and the white pigment has a higher function as a base pigment than that of titanium oxide. A white pigment for cosmetics of the present invention includes a titanium phosphate powder having a whiteness of 92.91 or more as determined in accordance with JIS Z 8715.

Abstract: Provided is a powder having excellent hiding power, such that the powder can be used in place of titanium dioxide as a white pigment in a cosmetic. The powder of the present invention includes plate-shaped crystal particles, the volume D50% diameter thereof is 0.7 ?m or more and 8.0 ?m or less, and a coefficient of variation (CV value) of a primary particle diameter is 1.0 or less.

Abstract: Provided is a method that enables good cleaning of a polished substrate formed of a high-hardness material. Provided is a method of polishing and cleaning a substrate formed of a material having a Vickers hardness of 1500 Hv or more. The method includes: polishing a substrate to be polished using a polishing composition; and cleaning the polished substrate using a cleaner. The polishing composition contains a polishing auxiliary. Furthermore, the cleaner contains a surfactant.

Abstract: There is provided a method of producing anionically modified colloidal silica capable of polishing a silicon nitride film at a high speed and suppressing a polishing speed of a silicon oxide film. A method of producing anionically modified colloidal silica includes ion exchanging raw colloidal silica using an ion exchange resin (ion exchange step); and anionically modifying ion-exchanged raw colloidal silica to obtain anionically modified colloidal silica (modification step).

Abstract: To provide a polyvinyl alcohol composition effectively suppressed in generation of an aggregated product, in a method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition. A method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition, wherein the polyvinyl alcohol composition is obtained through an addition-in-liquid step of adding into the inside of any one solution of a first liquid containing polyvinyl alcohol and water and a second liquid other than the first liquid, the other liquid of the first liquid and the second liquid.

Abstract: Provided is an absorption method of an element belonging to periods 4 to 6 and groups 3 to 15 of the periodic table. The method includes: preparing mesoporous alumina that satisfies at least one of the following items: (1) a surface hydroxyl content is 3.5 mmol/g or more; (2) a low-temperature CO2 desorption amount in CO2 thermal desorption amount spectrometry is 5 µmol/g or more; and (3) a low-temperature NH3 desorption amount in NH3 thermal desorption amount spectrometry is 25 µmol/g or more; and bringing a liquid containing an absorption target element in contact with the mesoporous alumina to absorb the absorption target element in the mesoporous alumina. The absorption target element is at least one type selected from the group consisting of an element belonging to periods 4 to 6 and groups 3 to 15 of the periodic table.

Abstract: Solutions are disclosed for preventing the settling of an abrasive, while maintaining the polishing performance of a polishing composition. Solutions are disclosed for improving the redispersibility of an abrasive while maintaining the polishing performance. Polishing compositions for use in polishing a semiconductor substrate according to the present disclosure include an abrasive, a layered compound, and a dispersion medium.