Abstract: The present invention provides a means capable of further improving stability and washability under acidic conditions. The present invention is sulfonic acid-modified colloidal silica having an amount of sulfonic acid groups per 1 g of particles of 1.5 ?mol/g or more and 13.0 ?mol/g or less.

Abstract: Means capable of sufficiently removing residues remaining on a surface of a polished object containing silicon nitride and at least one selected from the group consisting of silicon oxide and polysilicon is provided. A composition for surface treatment, comprising: a nitrogen-free nonionic polymer, a nitrogen-containing nonionic polymer, and an anionic polymer, wherein the nitrogen-free nonionic polymer has a weight-average molecular weight of less than 100,000, the ratio of a weight-average molecular weight of the nitrogen-containing nonionic polymer to the weight-average molecular weight of the nitrogen-free nonionic polymer (nitrogen-containing nonionic polymer/nitrogen-free nonionic polymer) is 0.1 or more and 10 or less, and the composition for surface treatment has a pH of less than 7.0.

Abstract: Provided is a means capable of polishing an organic material at a high polishing speed and reducing the number of scratches after polishing. The polishing composition of the present invention contains zirconia particles and a dispersing medium, in which the zirconia particles contain at least one of tetragonal zirconia and cubic zirconia, and an average secondary particle size of the zirconia particles is less than 80 nm.

Abstract: Provided is a means capable of sufficiently removing residues on a surface of an object to be polished while polishing the object to be polished at a moderate speed. Provided is a polishing composition containing: anionically-modified colloidal silica; a dispersing medium; an anionic water-soluble polymer which is a copolymer including a structural unit having a sulfonic acid group or a salt group thereof and a structural unit having a carboxy group or a salt group thereof; a polypropylene glycol having a weight average molecular weight of 200 or more and 700 or less; a nitrogen-free non-ionic polymer other than the polypropylene glycol having a weight average molecular weight of 200 or more and 700 or less; and a nitrogen-containing non-ionic polymer.

Abstract: A means capable of sufficiently removing residues remaining on the surface of a polished object is to be provided. The present invention relates to a surface treatment composition, containing a component (A) and a component (B) and having pH of 8.0 or more: component (A): a polymer having a constituent unit having a quaternary nitrogen-containing onium salt or a constituent unit of a structure (X) below, component (B): a buffer represented by a formula: R—COO—NH4+.

Abstract: The silicon carbide powder is a powder of silicon carbide having an ?-type crystal system, where the number of small corner portions among corner portions on a surface of a primary particle of silicon carbide constituting the powder of silicon carbide is 2.5 or less per one primary particle. The small corner portion is a corner portion, among corner portions present in a contour of the primary particle in a projection image of the primary particle, where twice a curvature radius of the corner portion is 1/5 or less of a Heywood diameter of the projection image of the primary particle.

Abstract: The present invention provides a method for producing an inorganic particle-containing slurry, by which the number of coarse particles can be sufficiently reduced. The present invention is a method for producing an inorganic particle-containing slurry, which comprises: a step of preparing an inorganic particle dispersion containing inorganic particles and a dispersing medium, and having a pH less than the isoelectric point of the inorganic particles; and a step of adding an alkaline compound to the inorganic particle dispersion in such a manner that the pH does not reach the isoelectric point of the inorganic particles.

Abstract: An object of the present invention is to provide a polishing composition that can achieve both a high polishing removal rate and high surface quality. According to the present invention, provided is a polishing composition for polishing a material to be polished. The polishing composition contains sodium metavanadate, hydrogen peroxide, and silica abrasive. The content C1 of sodium metavanadate is 0.7% to 3.5% by weight, the content C2 of hydrogen peroxide is 0.3% to 3% by weight, and the content C3 of the silica abrasive is 12% to 50% by weight.

Abstract: The present invention provides a means capable of suppressing the formation of fine particles in a method for producing a silica sol.

Abstract: Provided is a white pigment for cosmetics capable of giving a cosmetic having an excellent performance smoothly applicable onto the skin. A white pigment for cosmetics of the present invention includes a titanium phosphate powder, the titanium phosphate powder includes crystal particles of titanium phosphate, and the titanium phosphate powder has an average friction coefficient (MIU) of less than 1.45.

Abstract: Provided are a dispersion for a silicon carbide sintered body having a small environmental load, high dispersibility, and excellent temporal stability, and a manufacturing method thereof. The dispersion is a dispersion for a silicon carbide sintered body, containing: silicon carbide particles; boron nitride particles; a resin having a hydroxyl group; and water, wherein the dispersion has a pH at 25° C. of less than or equal to 7.0, and the silicon carbide particles and the boron nitride particles have charges of the same sign. The dispersion is manufactured by a manufacturing method of a dispersion for a silicon carbide sintered body, including a mixing step of mixing a water dispersion containing silicon carbide particles, a water dispersion containing boron nitride particles, and an aqueous solution containing a resin having a hydroxyl group.

Abstract: A polishing method according to the present invention, includes polishing a polishing object containing a silicon material by using a polishing composition containing abrasive grains, a tri- or more polyvalent hydroxy compound and a dispersing medium and having pH of less than 6.0.

Abstract: To provide a powder material for additive layer manufacturing capable of molding a three-dimensional shaped molded article having less cracking or chipping and having high hardness and a method for manufacturing a molded article using the powder material. A powder material for additive layer manufacturing used to manufacture a three-dimensional shaped molded article by irradiation with a laser light or an electron beam contains cobalt, a first component containing one or more substances selected from the group consisting of vanadium carbide, niobium carbide, and molybdenum carbide, an optional additive component, and the balance of tungsten carbide. The content of the first component is 0.6% by mass or more and 5% by mass or less.

Abstract: An object of the present invention is to provide a new polishing composition that contributes to improving the quality of a device. There is provided a polishing composition containing: an abrasive grain having an organic acid immobilized on a surface thereof; a first water-soluble polymer having a sulfonic acid group or a group having a salt thereof, or a carboxyl group or a group having a salt thereof; a second water-soluble polymer different from the first water-soluble polymer; a nonionic surfactant; and an aqueous carrier, wherein the polishing composition is used for polishing an object to be polished.

Abstract: The present invention provides means capable of imparting high temporal stability to a hardening aid solution which serves as a raw material and capable of imparting high strength and high quality stability to a hardened body of the self-hardening material, in the hardened body of the self-hardening material that contains a ceramic powder containing Si element at least on the surface thereof.

Abstract: Provided is a polishing composition that contains a cellulose derivative and can improve the polishing removability and enhance the wettability of a polished surface of a silicon wafer. The polishing composition contains an abrasive, a cellulose derivative, a basic compound, and water. Here, the polishing composition has a zeta potential of -24.0 mV or more.

Abstract: Provided is a method for producing a porous metal oxide. The method includes: preparing a slurry by mixing a metal source, a pore forming agent and an aqueous solvent; drying the slurry to obtain a metal oxide precursor; and sintering the metal oxide precursor to generate a porous metal oxide. The metal source is an organometallic compound or hydrolyzate thereof containing a metal that makes up the porous metal oxide; the pore forming agent is an inorganic compound that generates a gas by decomposing at a temperature equal to or lower than a temperature at which the metal oxide precursor is sintered; and the slurry is prepared using 50 parts by weight or more of the pore forming agent with respect to 100 parts by weight of the metal source.

Abstract: There is provided a silicon carbide powder having a small mean particle diameter and a narrow particle diameter distribution width. A silicon carbide powder is a powder of silicon carbide (SiC) having an ?-type crystal form and has a mean particle diameter of 300 nm or less. In the silicon carbide powder, a ratio D90/D10 between a particle diameter D10 and a particle diameter D90 is 4 or less, the particle diameter D10 being a particle diameter at which the cumulative particle volume from the small particle diameter side in a volume-based cumulative particle diameter distribution reaches 10% of the total particle volume and the particle diameter D90 being a particle diameter at which the cumulative particle volume from the small particle diameter side in the volume-based cumulative particle diameter distribution reaches 90% of the total particle volume.

Abstract: Provided are a method for polishing a silicon substrate according to which PID can be reduced and a polishing composition set usable in the polishing method. The silicon substrate polishing method provided by this invention comprises a stock polishing step and a final polishing step. The stock polishing step comprises several stock polishing sub-steps carried out on one same platen. The several stock polishing sub-steps comprise a final stock polishing sub-step carried out while supplying a final stock polishing slurry PF to the silicon substrate. The total amount of the final stock polishing slurry PF supplied to the silicon substrate during the final stock polishing sub-step has a total weight of Cu and a total weight of Ni, at least one of which being 1 ?g or less.

Abstract: Provided is a polishing composition that can achieve wettability enhancement and haze reduction of a polished surface of a silicon wafer. The polishing composition for a silicon wafer contains an abrasive, a cellulose derivative, a surfactant, a basic compound, and water. Here, the cellulose derivative has a weight average molecular weight of more than 120×104, and the surfactant has a molecular weight of less than 4000.