Abstract: A light emitting diode (LED) including a combination of features that enable the LED to produce a high-brightness predetermined radiation pattern. The combination of features enable the LED to function cooler and more reliably at a higher drive currents and elevated ambient temperatures, and therefore emit light of increased brightness, without overheating, and to have a particular radiation pattern. In particular, a surface mount that is capable of operating at high drive currents and high ambient temperatures is disclosed. The LED comprises a surface mount package having a metal lead frame having mass sufficient to provide low thermal resistance, at least one anode contact pad and at least one cathode contact pad. The LED also includes a reflector positioned within the package, a semiconductor die and an optional focusing dome.

Abstract: A light source including a specific LED and phosphor combination capable of emitting white light for direct illumination. In one embodiment, the light source includes an LED chip emitting in the 460-470 nm range radiationally coupled to a phosphor comprising Ca8Mg(SiO4)4Cl2:Eu2+,Mn2+. In a second embodiment, the light source includes an LED chip emitting at about 430 nm and a phosphor comprising a blend of Sr4Al14O25:Eu2+ (SAE) and a second phosphor having the formula(Tb1-x-yAxREy)3DzO12, where A is a member selected from the group consisting of Y, La, Gd, and Sm; RE is a member selected from the group consisting of Ce, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, and Lu; D is a member selected from the group consisting of Al, Ga, and In; x is in the range from 0 to about 0.5, y is in the range from about 0 to about 0.2, and z is in the range from about 4 to about 5. Both embodiments produce light having the coordinates x=0.240-0.260 and y=0.340-0.360 on the CIE chromaticity diagram.

Abstract: A signaling control device apparatus (10) comprises at least one LED (20) having a light emitting surface (18). A sensor (24) is set to detect an external light load (16) directed to the light emitting surface (18) and generate a control signal indicative of a presence of the light load (16). An electrical control system (14) detects the control signal indicative of the light load (16) and sources an elevated current to the LED (20) while the light load (16) is present. The elevated current increases the contrast ratio making the signal perceivable by the users as being in a particular state.

Abstract: A light emitting device comprised of a light emitting diode on a mounting surface, the light emitting diode includes a substrate layer and at least one active region. A resilient substantially transparent and substantially phosphor free polymer layer extends from the mounting surface to above at least one quarter of a height of the substrate layer but below a top surface of the light emitting diode. A second phosphor containing layer extends from the phosphor free polymer layer to above the top surface of the light emitting diode.

Abstract: A light emitting diode incorporating an active emitting layer (14) overlying a transparent substrate (10) is provided with a reflective diffraction grating (30) on the bottom surface of the substrate. Emitted light passing downwardly through the substrate is diffracted outwardly toward edges (21) of the substrate and passes out of the die through the edges. This effect enhances the external quantum efficiency of the diode.

Abstract: A semiconductor device die (10, 116) is disposed on a heat-sinking support structure (30, 100). Nanotube regions (52, 120) contain nanotubes (54, 126) are arranged on a surface of or in the heatsinking support structure (30, 100). The nanotube regions (52, 120) are arranged to contribute to heat transfer from the semiconductor device die (10, 116) to the heat-sinking support structure (30, 100). In one embodiment, the semiconductor device die (10) includes die electrodes (20, 22), and the support structure (30) includes contact pads (40, 42) defined by at least some of the nanotube regions (52). The contact pads (40, 42) electrically and mechanically contact the die electrodes (20, 22). In another embodiment, the heat-sinking support structure (100) includes microchannels (120) arranged laterally in the support structure (100). At least some of the nanotube regions are disposed inside the microchannels (100).

Abstract: A modular mounting assembly (10) for connecting a plurality of LEDs in a selectable electrical and spatial arrangement includes a plurality of substrates (12) each having at least one LED (14a, 14b) fixedly arranged thereon, and a plurality of connectors (16) arranged thereon that are in operative communication with the at least one LED (14a, 14b) fixedly arranged thereon. The plurality of substrates (12) are arranged in a selected spatial arrangement having selected pairs of connectors (16) in operative communication with each other to effectuate electrical connection therebetween, whereby an electrical arrangement of the plurality of LEDs is effectuated. A plurality of interconnecting elements (50A, 50D, 50S, 50P) electrically and structurally interconnect selected spatially adjacent substrates (12) in cooperation with the selected pairs of connectors.

Abstract: A light-emitting element (24) is disclosed. A light emitting diode (LED) includes a sapphire substrate (26) having front and back sides (33, 35), and a plurality of semiconductor layers (28, 30, 32) deposited on the front side (33) of the sapphire substrate (26). The semiconductor layers (28, 30, 32) define a light-emitting structure that emits light responsive to an electrical input. A metallization stack (40) includes an adhesion layer (34) deposited on the back side (35) of the sapphire substrate (26), and a solderable layer (38) connected to the adhesion layer (34) such that the solderable layer (38) is secured to the sapphire substrate (26) by the adhesion layer (34). A support structure (42) is provided on which the LED is disposed. A solder bond (44) is arranged between the LED and the support structure (42). The solder bond (44) secures the LED to the support structure (42).

Abstract: In a method of manufacturing a flip-chip light emitting diode, semiconductor layers (14, 16, 16′, 18, 18′, 20, 20′) that define a light emitting electrical junction (18, 18′) are epitaxially deposited on a principle surface of an epitaxy substrate (12, 12′). A light-emitting device mesa (24, 24′) is formed from the epitaxially deposited semiconductor layers. A first electrode (30, 30′, 54) is formed on a portion of the device mesa distal from the epitaxy substrate. The first electrode electrically contacts the device mesa. A second electrode (32, 32′, 56) is disposed on the principle surface of the substrate. First and second electrodes are flip-chip bonded to bonding pads (40, 40′, 42, 42′). The epitaxy substrate is removed. An electrically conductive, light-transmissive window layer (14, 14′) is arranged over the device mesa and the second electrode.

Abstract: A showerhead (802, 804) or faucet (12, 602, 702) includes a water outlet (16, 606, 706, 802) for emitting a water flow (22, 610, 710) and a handle (18, 20, 604, 704, 830) for controlling the water flow (22, 610, 770). At least one LED (42, 242, 342, 442, 542, 544, 546, 624, 658, 730, 810) is arranged on or in the showerhead (802, 804) or faucet (12, 602, 702) and viewable by an associated user thereof. A light-transmissive encapsulant (630, 660, 732) seals the at least one LED (42, 242, 342, 442, 542, 544, 546, 624, 658, 730, 810) and transmits light produced by the at least one LED (42, 242, 342, 442, 542, 544, 546, 624, 658, 730, 810) to the associated user. A controller (550) produces a controller output for controlling the LED light emission responsive to at least one of a water flow rate, a water flow temperature, an ambient light level, and a position of the handle (18, 20, 604, 704, 830).

Abstract: Surface mount light emitting diode (LED) packages each contain a light emitting diode (LED) die (24). A plurality of arrays of openings are drilled into an electrically insulating sub-mount wafer (10). A metal is applied to the drilled openings to produce a plurality of via arrays (12). The LED dice (24) are flip-chip bonded onto a frontside (16) of the sub-mount wafer (10). The p-type and n-type contacts of each flip-chip bonded LED (24) electrically communicate with a solderable backside (18) of the sub-mount wafer (10) through a via array (12). A thermal conduction path (10, 12) is provided for thermally conducting heat from the flip-chip bonded LED dice (24) to the solderable backside (18) of the sub-mount wafer (10). Subsequent to the flip-chip bonding, the sub-mount wafer (10) is separated to produce the surface mount LED packages.

Abstract: A light module includes a light emitting diode assembly defining a front side light emitting diode array and a rear side. The rear side is in thermal communication with a thermally conductive spreader, and a thermally conductive core is in thermal communication with the conductive spreader. The thermally conductive core includes an electrical conductor in operative communication with the front side light emitting diode array, and a plurality of appendages disposed about the thermally conductive core such that they are in thermal communication with the conductive spreader.

Abstract: Surface mount light emitting diode (LED) packages each contain a light emitting diode (LED) die (24). A plurality of arrays of openings are drilled into an electrically insulating sub-mount wafer (10). A metal is applied to the drilled openings to produce a plurality of via arrays (12). The LED dice (24) are flip-chip bonded onto a frontside (16) of the sub-mount wafer (10). The p-type and n-type contacts of each flip-chip bonded LED (24) electrically communicate with a solderable backside (18) of the sub-mount wafer (10) through a via array (12). A thermal conduction path (10, 12) is provided for thermally conducting heat from the flip-chip bonded LED dice (24) to the solderable backside (18) of the sub-mount wafer (10). Subsequent to the flip-chip bonding, the sub-mount wafer (10) is separated to produce the surface mount LED packages.

Abstract: An LED light assembly includes a housing, an LED disposed in the housing, a heat dissipating structure and a fluid current generator. The LED is in thermal communication with the heat dissipating structure and includes a flow path surface. The fluid current generator is disposed in the housing to create a current over the flow path surface.

Abstract: A system for converting light from a first range of wavelengths to a second range of wavelengths includes a semiconductor die and a phosphor embedded epoxy contacting a first end of the semiconductor die. A frame contacts the phosphor embedded epoxy. The first and second ranges of wavelengths include blue/ultraviolet light and visible light, respectively.

Abstract: A light-emitting diode-based light source (40) for retro-fitting into a traffic signal lamp (10) employing an incandescent light bulb (12) includes at least one light emitting diode (LED) (46), a dispersing reflector (62) cooperating with the at least one LED (46) to adapt light (60) produced by the at least one LED (46) for receipt by optics of the traffic signal lamp (10), and a screw-type electrical connector (42) adapted to mate with a threaded socket connector (18) of the traffic signal lamp (10). The screw-type electrical connector (42) is adapted to transmit electrical power to the at least one LED (46). A method (100) is provided for the retro-fitting, including the step (104) of removing the threaded light bulb (12) from the threaded socket (18), and the step (106) of connecting the threaded LED light source (40) into the threaded socket (18).

Abstract: A light-emitting element (24) is disclosed. A light emitting diode (LED) includes a sapphire substrate (26) having front and back sides (33, 35), and a plurality of semiconductor layers (28, 30, 32) deposited on the front side (33) of the sapphire substrate (26). The semiconductor layers (28, 30, 32) define a light-emitting structure that emits light responsive to an electrical input. A metallization stack (40) includes an adhesion layer (34) deposited on the back side (35) of the sapphire substrate (26), and a solderable layer (38) connected to the adhesion layer (34) such that the solderable layer (38) is secured to the sapphire substrate (26) by the adhesion layer (34). A support structure (42) is provided on which the LED is disposed. A solder bond (44) is arranged between the LED and the support structure (42). The solder bond (44) secures the LED to the support structure (42).

Abstract: A lamp (10) includes an optics module (12) and an electronics module (14, 60, 70). The optics module (10) includes a plurality of LEDs (76) arranged on a printed circuit board (18) and having a plurality of input leads, and a heat sink (22) having a conduit (40) for the input leads. The plurality of LEDs (16) thermally communicate with the heat sink (22). The electronics module (14, 60, 70) is adapted to power the plurality of LEDs (16) through the input leads. The electronics module (14, 60, 70) has a first end (52) adapted to rigidly connect with the heat sink (22), and a selected electrical connector (50, 62, 72) arranged on a second end for receiving electrical power. The electronics module (14, 60, 70) further houses circuitry (80) arranged therewithin for adapting the received electrical power (82) to drive the LEDs (16).

Abstract: Light emitting diodes are provided with electrode and pad structures which redirect light which otherwise would be blocked by the pad. The LED may be formed as a die with first and second contact surfaces. A pad is in contact with the first contact surface. A reflector is disposed beneath the first pad, and the reflector includes walls that are oblique with respect to the first contact surface.

Abstract: A light source including a specific LED and phosphor combination capable of emitting white light for direct illumination. In one embodiment, the light source includes an LED chip emitting in the 380-420 nm range radiationally coupled to a phosphor blend first phosphor selected from the group consisting of (Sr,Ba,Ca,Mg)5(PO4)3Cl:Eu2+ (SECA) and BaMg2Al16O27:Eu2+ with a second phosphor having the formula (Tb1-x-yAxREy)3DzO12 (TAG), where A is a member selected from the group consisting of Y, La, Gd, and Sm; RE is a member selected from the group consisting of Ce, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, and Lu; D is a member selected from the group consisting of Al, Ga, and In; x is in the range from 0 to about 0.5, y is in the range from about 0 to about 0.2, and z is in the range from about 4 to about 5. The light source thus produced will provide a high quality white light.