Abstract: A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer, respectively. The light emitting unit is disposed on the light transmissive layer and at least a part of the first electrode and a part of the second electrode are exposed by the light transmissive layer. The encapsulant encapsulates the light emitting unit and at least exposes a part of the first electrode and a part of the second electrode. Each of the first electrode and the second electrode extends outward from the epitaxial structure layer, and covers at least a part of an upper surface of the encapsulant, respectively.

Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.

Abstract: A light emitting device structure includes a light emitting device, a molding compound, a transparent substrate and a reflective layer. The light emitting device has an upper surface and a lower surface opposite to each other, a side surface connecting the upper and lower surfaces, and a first pad and a second pad located on the lower surface and separated from each other. The molding compound at least encapsulates the upper surface and the side surface, and exposes the first pad and the second pad. The transparent substrate is disposed above the upper surface of the light emitting device, and the molding compound is located between the transparent substrate and the light emitting device. The reflective layer directly covers the side surface of the light emitting device, wherein the molding compound encapsulates the reflective layer and exposes a bottom surface of the reflective layer.

Abstract: A flip chip light emitting diode package structure includes a package carrier, a light guiding unit and at least one light emitting unit. The light guiding unit and the light emitting unit are disposed on the package carrier, and the light emitting unit is located between the light guiding unit and the package carrier. A horizontal projection area of the light guiding unit is greater than that of the light emitting unit. The light emitting unit is adapted to emit a light beam, and the light beam enters the light guiding unit and emits from an upper surface of the light guiding unit away from the light emitting unit.

Abstract: A light emitting device includes a wavelength conversion layer, at least one light emitting unit and a reflective protecting element. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light emitting unit has two electrode pads located on the same side of the light emitting unit. The light emitting unit is disposed on the upper surface of the wavelength conversion layer and exposes the two electrode pads. The reflective protecting element encapsulates at least a portion of the light emitting unit and a portion of the wavelength conversion layer, and exposes the two electrode pads of the light emitting unit.

Abstract: A light emitting device package structure and a manufacturing method thereof are provided. The light emitting device package structure includes a light emitting device and a protecting element. The light emitting device has an upper surface and a lower surface opposite to each other, a side surface connecting the upper surface and the lower surface and a first electrode pad and a second electrode pad located on the lower surface and separated from each other. The protecting element encapsulates the side surface of the light emitting device and exposes at least portion of the upper surface, at least portion of a first bottom surface of the first electrode pad and at least portion of a second bottom surface of the second electrode pad.

Abstract: A light emitting diode structure including a substrate, a semiconductor epitaxial structure, a first insulating layer, a first reflective layer, a second reflective layer, a second insulating layer and at least one electrode. The substrate has a tilt surface. The semiconductor epitaxial structure at least exposes the tilt surface. The first insulating layer exposes a portion of the semiconductor epitaxial structure. The first reflective layer is at least partially disposed on the portion of the semiconductor epitaxial structure and electrically connected to the semiconductor epitaxial structure. The second reflective layer is disposed on the first reflective layer and the first insulating layer, and covers at least the portion of the tilt surface. The second insulating layer is disposed on the second reflective layer. The electrode is disposed on the second reflective layer and electrically connected to the first reflective layer and the semiconductor epitaxial structure.

Abstract: An LED includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer, and a second current conducting layer. The light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on the first-type semiconductor layer and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first bonding layer and the first metal layer. The first bonding layer is electrically connected to the first-type semiconductor layer via the first current conducting layer and the first metal layer. The first bonding layer has through holes overlapping with the first metal layer.

Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting clement, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.

Abstract: A light-emitting device including at least one light-emitting unit, a wavelength conversion adhesive layer, and a reflective protecting element is provided. The light-emitting unit has an upper surface and a lower surface opposite to each other. The light-emitting unit includes two electrode pads, and the two electrode pads are located on the lower surface. The wavelength conversion adhesive layer is disposed on the upper surface. The wavelength conversion adhesive layer includes a low-concentration fluorescent layer and a high-concentration fluorescent layer. The high-concentration fluorescent layer is located between the low-concentration fluorescent layer and the light-emitting unit. The width of the high-concentration fluorescent layer is WH. The width of the low-concentration fluorescent layer is WL. The width of the light-emitting unit is WE. The light-emitting device further satisfies the following inequalities: WE<WL, WH<WL and 0.8<WH/WE?1.2.

Abstract: A ?LED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the ?LED is also provided.

Abstract: A light emitting component includes a light emitting unit, a molding compound and a wavelength converting layer. The light emitting unit has a forward light emitting surface. The molding compound covers the light emitting unit. The wavelength converting layer is disposed above the molding compound. The wavelength converting layer has a first surface and a second surface opposite to the first surface, wherein the first surface is located between the forward light emitting surface and the second surface, and at least one of the first and second surfaces is non-planar.

Abstract: A nitrogen-containing semiconductor device including a first type doped semiconductor layer, a multiple quantum well layer and a second type doped semiconductor layer is provided. The multiple quantum well layer includes barrier layers and well layers, and the well layers and the barrier layers are arranged alternately. The multiple quantum well layer is located between the first type doped semiconductor layer and the second type doped semiconductor layer, and one of the well layers of the multiple quantum well layer is connected to the second type doped semiconductor layer.

Abstract: A nitrogen-containing semiconductor device including a substrate, a first AlGaN buffer layer, a second AlGaN buffer layer and a semiconductor stacking layer is provided. The first AlGaN buffer layer is disposed on the substrate, and the second AlGaN buffer layer is disposed on the first AlGaN buffer layer. A chemical formula of the first AlGaN buffer layer is AlxGa1-xN, wherein 0?x?1. The first AlGaN buffer layer is doped with at least one of oxygen having a concentration greater than 5×1017 cm?3 and carbon having a concentration greater than 5×1017 cm?3. A chemical formula of the second AlGaN buffer layer is AlyGa1-yN, wherein 0?y?1. The semiconductor stacking layer is disposed on the second AlGaN buffer layer.

Abstract: A method of mass transferring electronic devices includes following steps. A wafer is provided. The wafer includes a substrate and a plurality of electronic devices. The electronic devices are arranged in a matrix on a surface of the substrate. The wafer is attached to a temporary fixing film. The wafer is cut so that the wafer is divided into a plurality of blocks. Each of the blocks includes at least a part of the electronic devices and a sub-substrate. The temporary fixing film is stretched so that the blocks on the temporary fixing film are separated from each other as the temporary fixing film is stretched. At least a part of the blocks is selected as a predetermined bonding portion, and each of the blocks in the predetermined bonding portion is transferred to a carrying substrate in sequence, so that the electronic devices in the predetermined bonding portion arc bonded to the carrying substrate. The sub-substrates of the blocks are removed.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm ?3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.

Abstract: A light emitting module including a light emitting device package structure and a heat dissipation structure is provided. The light emitting device package structure includes light emitting devices, a patterned reflective element and a patterned conductive layer. The patterned reflective element is disposed around side surfaces of the light emitting devices and exposes a first bottom surface of a first pad and a second bottom surface of a second pad. The patterned conductive layer is disposed on the first bottom surface of the first pad and the second bottom surface of the second pad. The light emitting devices are electrically connected to each other in a series connection, a parallel connection or a series-parallel connection through the patterned conductive layer. The heat dissipation structure is disposed below the light emitting device package structure and includes a heat dissipation unit and a patterned circuit layer disposed on the heat dissipation unit.

Abstract: A light emitting component includes an epitaxial structure, an adhesive layer, a first reflective layer, a second reflective layer, a block layer, a first electrode and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer. The adhesive layer is disposed on the second semiconductor layer of the epitaxial structure. The first reflective layer is disposed on the adhesive layer. The second reflective layer is disposed on the first reflective layer and extended onto the adhesive layer. A projection area of the second reflective layer is larger than a projection area of the first reflective layer. The block layer is disposed on the second reflective layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.

Abstract: A light source device including a substrate, a plurality of first light emitting diode (LED) chips, and at least one second LED chip is provided. The substrate has an upper surface. The plurality of first LED chips are disposed on the upper surface and electrically connected to the substrate. Each of the first LED chips includes a first chip substrate, a first semiconductor layer, and a plurality of first electrodes, and the first electrodes are disposed on the upper surface of the substrate. The second LED chip is disposed on the upper surface and electrically connected to the substrate. The second LED chip includes a second chip substrate, a second semiconductor layer, and a plurality of second electrodes. A thickness of the second chip substrate is different from than a thickness of the first chip substrate, and the second electrodes are disposed on the upper surface of the substrate.

Abstract: A semiconductor structure includes a silicon substrate, an aluminum nitride layer and a plurality of grading stress buffer layers. The aluminum nitride layer is disposed on the silicon substrate. The grading stress buffer layers are disposed on the aluminum nitride layer. Each grading stress buffer layer includes a grading layer and a transition layer stacked up sequentially. A chemical formula of the grading layer is Al1-xGaxN, wherein the x value is increased from one side near the silicon substrate to a side away from the silicon substrate, and 0?x?1. A chemical formula of the transition layer is the same as the chemical formula of a side surface of the grading layer away from the silicon substrate. The chemical formula of the transition layer of the grading stress buffer layer furthest from the silicon substrate is GaN.