Abstract: An improved cluster-supporting catalyst has heteroatom-removed zeolite particles, and catalyst metal clusters supported within the pores of the heteroatom-removed zeolite particles. A method for producing a cluster-supporting catalyst includes the following steps: providing a dispersion liquid containing a dispersion medium and the heteroatom-removed zeolite particles dispersed in the dispersion medium; and in the dispersion liquid, forming catalyst metal clusters having a positive charge, and supporting the catalyst metal clusters within the pores of the heteroatom-removed zeolite particles through an electrostatic interaction.

Abstract: A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer, respectively. The light emitting unit is disposed on the light transmissive layer and at least a part of the first electrode and a part of the second electrode are exposed by the light transmissive layer. The encapsulant encapsulates the light emitting unit and at least exposes a part of the first electrode and a part of the second electrode. Each of the first electrode and the second electrode extends outward from the epitaxial structure layer, and covers at least a part of an upper surface of the encapsulant, respectively.

Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.

Abstract: A semiconductor structure includes a first-type doped semiconductor layer, a light emitting layer, a second-type doped semiconductor layer comprising AlxInyGa1-x-yN layers, at least one GaN based layer, and an ohmic contact layer. The light emitting layer is disposed on the first-type doped semiconductor layer, and the second-type doped semiconductor layer is disposed on the light emitting layer. The AlxInyGa1-x-yN layers stacked on the light emitting layer, where 0<x<1, 0?y<1, and 0<x+y<1, and the GaN based layer interposed between two of the AlxInyGa1-x-yN layers, and the ohmic contact layer is disposed on the AlxInyGa1-x-yN layers.

Abstract: Cluster-supporting catalyst having an improved heat resistivity, and method for producing the same are provided. The cluster-supporting catalyst includes boron-substitute zeolite particles, and catalyst metal clusters supported within the pores of the boron-substitute zeolite particles. The method for producing a cluster-supporting catalyst, includes the following steps: providing a dispersion liquid containing a dispersion medium and boron-substitute zeolite particles dispersed in the dispersion medium; and in the dispersion liquid, forming catalyst metal clusters having a positive charge, and supporting the catalyst metal clusters on the acid sites within the pores of the boron-substitute zeolite particles through an electrostatic interaction.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1-xN (0<x<1) while the stress control layer is made from AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.

Abstract: A two dimensional structure such as a disk or belt is shaped or distorted to form a buckling wave. At least one contact touches the wave, with two contacts squeezing the wave between them providing a firmer connection. The wave is propagated along the structure by any of a variety of means including magnets or piezo actuators. This movement of the wave moves the contacts relative to the two dimensional structure, providing a high leverage ratio.

Abstract: A light emitting module including a light emitting device package structure and a heat dissipation structure is provided. The light emitting device package structure includes light emitting devices, a patterned reflective element and a patterned conductive layer. The patterned reflective element is disposed around side surfaces of the light emitting devices and exposes a first bottom surface of a first pad and a second bottom surface of a second pad. The patterned conductive layer is disposed on the first bottom surface of the first pad and the second bottom surface of the second pad. The light emitting devices are electrically connected to each other in a series connection, a parallel connection or a series-parallel connection through the patterned conductive layer. The heat dissipation structure is disposed below the light emitting device package structure and includes a heat dissipation unit and a patterned circuit layer disposed on the heat dissipation unit.

Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.

Abstract: A speed change device comprising an inner race having an outer surface, an outer race having an inner surface, and set of orbital rollers including inner rollers in rolling contact with the outer surface of the inner race and outer rollers in rolling contact with the inner surface of the outer race.

Abstract: A ?LED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the ?LED is also provided.

Abstract: An in vitro human neural multipotent, unipotent, or somatic cell possessing all of the following characteristics: is derived from the reprogramming of a somatic cell, a progenitor cell or a stem cell that exhibits at least a transient increase in intracellular levels of at least one reprogramming agent; is not differentiated from a pluripotent cell; expresses one or more markers of a multipotent, unipotent or somatic cell not characteristic of a neural stem cell, neural precursor cell, neural progenitor cell, neuroblast, or neuron; is not a cancerous cell; is stable and not artificially maintained by forced gene expression and may be maintained in standard neural stem cell media or neural media; and does not exhibit uncontrolled growth, teratoma formation, and tumor formation in vivo; wherein the cell comprises at least one polypeptide or an expression vector encoding at least one polypeptide selected from the group consisting of: Musashi1 (Msi1); Ngn2; Msi1 and Ngn2; Msi1 and methyl-CpG binding domain protei

Abstract: A connector (400), such as a plug or a receptacle, has reduced cross-talk. The connector has a conductive plate (305), first and second insulators (310A, 310B) on either side of the conductive plate, leads (115) outside of the insulators, the leads being formed from first and second lead-frames, at least one of the leads (115, 315) having at least one tab or extension (320) which capacitively or conductively couples the lead to the conductive plate. The plate (305) may include an extension shaft (540), and a lateral extension (320) from a lead may be placed into contact with the shaft. A lateral extension (320E) formed on a rear portion of a lead may be placed into contact with a rear portion of the conductive plate (305B1) or with an opposing lead. Some of the leads may include severable tie bars (705).

Abstract: A light emitting device includes a wavelength conversion layer, at least one light emitting unit and a reflective protecting element. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light emitting unit has two electrode pads located on the same side of the light emitting unit. The light emitting unit is disposed on the upper surface of the wavelength conversion layer and exposes the two electrode pads. The reflective protecting element encapsulates at least a portion of the light emitting unit and a portion of the wavelength conversion layer, and exposes the two electrode pads of the light emitting unit.

Abstract: A linear reciprocating actuator for mixing, agitating, separation, continuous sampling and/or harvesting or filtration, gas mixing, and various other applications. The actuator may have a housing closed on one end, and attached to a vessel in a hermetically-sealed manner such that it is part of the fluidic envelope of the vessel. An agitation device may be attached to a shaft which is partially surrounded by the housing, or the agitation device may surround the housing where the housing protrudes into the vessel. The actuator enables agitation of the contents of a hermetically-sealed vessel without mechanical coupling from outside the fluidic envelope of the process. The agitation device is solely acted upon by a magnetic field, is contained entirely within the fluidic envelope of the process, and is not attached to the vessel in any way. The magnetic flux which drives the agitation device passes through the housing.

Abstract: A package method includes steps of providing a light emitting module, a mold and a molding compound, wherein the light emitting module includes a substrate and at least one light emitting unit disposed on the substrate, the mold has at least one recess, and a side wall of the recess is parallel to a side surface of the light emitting unit; filling the recess with the molding compound; placing the substrate on the mold reversely, so that the light emitting unit is immersed into the recess and the molding compound directly encapsulates the light emitting unit; and heating and pressing the substrate and the mold, so as to solidify the molding compound.

Abstract: A method for slicing a crystalline material ingot includes providing a crystalline material boule characterized by a cropped structure including a first end-face, a second end-face, and a length along an axis in a first crystallographic direction extending from the first end-face to the second end-face. The method also includes cutting the crystalline material boule substantially through a first crystallographic plane in parallel to the axis to separate the crystalline material boule into a first portion with a first surface and a second portion with a second surface. The first surface and the second surface are planar surfaces substantially along the first crystallographic plane. The method further includes exposing either the first surface of the first portion or the second surface of the second portion, and performing a layer transfer process to form a crystalline material sheet from either the first surface of the first portion or from the second surface of the second portion.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of AxInyGa1?x?yN (0<x<1, 0<y<1, 0<x+y<1) while the well layer is made of InzGa1?zN (0<z<1). Thereby quaternary composition is adjusted for lattice match between the barrier layers and the well layers. Thus crystal defect caused by lattice mismatch is improved.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm?3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.