Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.

Abstract: A ?LED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the ?LED is also provided.

Abstract: A speed change device comprising an inner race having an outer surface, an outer race having an inner surface, and set of orbital rollers including inner rollers in rolling contact with the outer surface of the inner race and outer rollers in rolling contact with the inner surface of the outer race.

Abstract: A connector (400), such as a plug or a receptacle, has reduced cross-talk. The connector has a conductive plate (305), first and second insulators (310A, 310B) on either side of the conductive plate, leads (115) outside of the insulators, the leads being formed from first and second lead-frames, at least one of the leads (115, 315) having at least one tab or extension (320) which capacitively or conductively couples the lead to the conductive plate. The plate (305) may include an extension shaft (540), and a lateral extension (320) from a lead may be placed into contact with the shaft. A lateral extension (320E) formed on a rear portion of a lead may be placed into contact with a rear portion of the conductive plate (305B1) or with an opposing lead. Some of the leads may include severable tie bars (705).

Abstract: An embodiment includes an orthopedic fusion system comprising: a cage; a curved first channel coupling a lateral wall of the cage to a superior surface of the cage; a curved second channel coupling the lateral wall of the cage to an inferior surface of the cage; a third channel coupling the superior surface of the cage to the inferior surface of the cage; a curved first anchor configured to slide within the first channel; a curved second anchor configured to slide within the second channel; and a resilient member comprising a resilient first arm that projects across a portion of the first channel and a resilient second arm that projects across a portion of the second channel. Other embodiments are described herein.

Abstract: A light emitting device includes a wavelength conversion layer, at least one light emitting unit and a reflective protecting element. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light emitting unit has two electrode pads located on the same side of the light emitting unit. The light emitting unit is disposed on the upper surface of the wavelength conversion layer and exposes the two electrode pads. The reflective protecting element encapsulates at least a portion of the light emitting unit and a portion of the wavelength conversion layer, and exposes the two electrode pads of the light emitting unit.

Abstract: A linear reciprocating actuator for mixing, agitating, separation, continuous sampling and/or harvesting or filtration, gas mixing, and various other applications. The actuator may have a housing closed on one end, and attached to a vessel in a hermetically-sealed manner such that it is part of the fluidic envelope of the vessel. An agitation device may be attached to a shaft which is partially surrounded by the housing, or the agitation device may surround the housing where the housing protrudes into the vessel. The actuator enables agitation of the contents of a hermetically-sealed vessel without mechanical coupling from outside the fluidic envelope of the process. The agitation device is solely acted upon by a magnetic field, is contained entirely within the fluidic envelope of the process, and is not attached to the vessel in any way. The magnetic flux which drives the agitation device passes through the housing.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of AxInyGa1?x?yN (0<x<1, 0<y<1, 0<x+y<1) while the well layer is made of InzGa1?zN (0<z<1). Thereby quaternary composition is adjusted for lattice match between the barrier layers and the well layers. Thus crystal defect caused by lattice mismatch is improved.

Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a barrier layer and a ductility layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The barrier layer is between the eutectic layer and the semiconductor epitaxial structure. The barrier layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The ductility layer is between the eutectic layer and the semiconductor epitaxial structure. The ductility layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: A manufacturing method of a semiconductor light-emitting device is provided. Steps of the manufacturing method includes: providing a substrate; placing at least one light-emitting unit on the substrate; encapsulating the at least one light-emitting unit onto the substrate by a phosphor layer and a reflective layer. The phosphor layer at least covers an upper surface of the at least one light-emitting unit, and the reflective layer surrounds the at least one light-emitting unit.

Abstract: In a rotor in rotor configuration, a pump has inward projections on an outer rotor and outward projections on an inner rotor. The outer rotor is driven and the projections mesh to create variable volume chambers. The outer rotor may be driven in both directions. In each direction, the driving part (first inward projection) of the outer rotor contacts a sealing surface on one side of an outward projection of the inner rotor, while a gap is left between a sealing surface of the other side of the outward projection and a second inward projection. The gap may have uniform width along its length in the radial direction, while in a direction parallel to the rotor axis it may be discontinuous or have variable size to create flow paths for gases.

Abstract: A light emitting module including a substrate, a plurality of first light emitting diode (LED) chips and a plurality of second LED chips is provided. The substrate has a cross-shaped central region and a peripheral region surrounding the cross-shaped central region. The first LED chips are disposed on the substrate and at least located in the cross-shaped central region. The second LED chips are disposed on the substrate and at least located in the peripheral region. A size of each second LED chip is smaller than a size of each first LED chip. The number of the first LED chips located in the peripheral region is smaller than that in the cross-shaped central region. The number of the second LED chips located in the cross-shaped central region is smaller than that in the peripheral region.

Abstract: A light emitting device includes a semiconductor light emitting unit and a light-transmitting substrate. The light-transmitting substrate includes an upper surface having two long sides and two short sides and a side surface, and the semiconductor light emitting unit is disposed on the upper surface. The side surface includes two first surfaces, two second surfaces, and rough micro-structures. Each of the first surfaces is connected to one of the long sides of the upper surface, and each of the second surfaces is connected to one of the short sides of the upper surface. The rough micro-structures are formed on the first surfaces and the second surfaces, a covering rate of the rough micro-structures on each of the first surfaces is greater than or equal to a covering rate of the rough micro-structures on each of the second surfaces. A manufacturing method of the light emitting device is also provided.

Abstract: The invention generally pertains to a modular gaming table having a quick-change insert for use with a plurality of sensors associated with the gaming table. By way of example, the modular gaming table has table top with a recessed section cut into the top surface. Several light sensors are positioned within the recessed section. A removable insert is provided having a gaming table layout covering the top surface. The removable insert is sized to fit within the table top recessed section and cover the plurality of light sensors. The light sensors are configured to detect a playing card or gaming chip on the top surface of the removable insert through the gaming table layout. The removable insert is a quick-change insert meaning it is configured to be removed from the table top recessed section to replace the gaming table layout without disturbing the position of the light sensors.

Abstract: A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer, respectively. The light emitting unit is disposed on the light transmissive layer and at least a part of the first electrode and a part of the second electrode are exposed by the light transmissive layer. The encapsulant encapsulates the light emitting unit and at least exposes a part of the first electrode and a part of the second electrode. Each of the first electrode and the second electrode extends outward from the epitaxial structure layer, and covers at least a part of an upper surface of the encapsulant, respectively.

Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm?3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.