Abstract: A connector (200), such as but not limited to a coaxial female F-connector, has an integral surge protector. The F-connector includes a connector body (220) with an extended center conductor lead (215). Attached to the F-connector and substantially surrounding the lead is an inductor, such as a toroid core (300) having windings (315) thereon. In one configuration one end (320) of the windings is attached to the center conductor lead and the other end (325) is attached to an electrical ground. In another configuration that other end is attached to a circuit ground via a capacitor, a power supply, or a biasing circuit. The inductor serves to shunt a surge to ground. A series capacitor is connected between the center conductor lead and an input/output port on an electronic circuit, passes the desired signal, and further helps to prevent a surge from reaching the device.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1?xN (0<x<1) while the stress control layer is made from AlxInyGa1?x?yN (0<x<1, 0<y<1, 0<x+y<1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a light emitting layer disposed between a n-type semiconductor layer and a p-type semiconductor layer, and a hole supply layer disposed between the light emitting layer and the p-type semiconductor layer. The hole supply layer is made from material InxGa1-xN (0<x<1) and is doped with a Group IV-A element at a concentration ranging from 1017 to 10 cm?3. By being doped with the Group IV-A element, the concentration of holes is increased and inactivation caused by Mg—H bonds is reduced. Thus Mg is activated as acceptors and the light emitting efficiency is further increased.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1) while the well layer is made of InzGa1-zN (0<z<1). Thereby quaternary composition is adjusted for lattice match between the barrier layers and the well layers. Thus crystal defect caused by lattice mismatch is improved.

Abstract: Capsaicinoid formulations and methods of treatment are disclosed herein which can be utilized to treat/attenuate pain in mammals. Typically, administration is via injection at a discrete site to provide pain relief for an extended period of time. The formulations are administered in a pharmaceutically acceptable vehicle. The formulations include an analgesic agent in an amount sufficient to attenuate the burning and hyperalgesic effects of capsaicinoid administration. The invention also includes a method of treating pain by administering a corticosteroid followed by administration of a capsaicinoid.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm?3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.

Abstract: The present invention generally relates to methods, compositions and uses thereof for enhancing vascularization of a tissue or cell transplant for transplantation into a subject. In particular, one aspect of the present invention provides methods and compositions comprising the use of a population of stromal vascular fraction (SVF) cells to encapsulate or surround a tissue or cell transplant to enhance vascularization of the tissue or cell transplant. Another aspect of the present invention provides methods and compositions for enhancing vascularization of a tissue or cell transplant by combining a population of SVF cells with a tissue or cell transplant to form a transplant mixed with SVF cells.

Abstract: A capping system and method of use for sealing injectable drugs within vials is disclosed. The system includes a closure assembly and a locking cap. The closure assembly includes a retainer member and a resilient stopper located within the retainer member. The retainer member is arranged to be disposed on the vial whereupon a gap results between the stopper and the vial. The retainer member is movable to close that gap. The locking cap is used to permanently seal the vial.

Abstract: A wavelength converting substance is made of semiconductor material. The wavelength converting substance is suitable for absorbing an exciting light with the wavelength range falling between 300 nanometers and 490 nanometers and converting the exciting light to an emitted light with wavelength range falling between 450 nanometers and 750 nanometers.

Abstract: An optical device for incapacitating individuals exposed to generated light. It has a housing with a head portion and window opening, a reflector with a focus facing the window opening, a power source, an electric lamp mounted at the reflector's focus. It emits a high intensity incoherent light beam of between 380-780 nm. It has a switching and isolation circuit connected to a pulse mode power conversion and a first control circuit to the electric lamp, and connected in parallel to a steady state mode power conversion and a second control circuit to the electric lamp. Both the pulse mode power conversion and control circuits are connected in common to the power source. The circuits apply pulses of power to the electric lamp temporarily increasing the total luminous flux to incapacitate one of more targeted individuals within a duration of less than 2 seconds.

Abstract: A method for management of a land base includes interfacing a machine or equipment to a computer running a geographical information system (GIS) application such that the computer is configured to monitor the operations performed by the equipment or machine on the land base and store the operations as map points, lines, or polygons on at least one data layer within the GIS application. The method further includes displaying the GIS application to the operator at the point and time of performing the operations.

Abstract: Dynamic, asymmetric rings and related communication equipment and methods are disclosed. Various features may be implemented to provide any or all of several degrees of freedom for managing resources in a communication network. Communication rates may be optimized on a node-to-node basis or overall on a network level. Different rates may be configured and possibly dynamically adjusted between different nodes, and/or for different directions of traffic transfer. Bandwidth can be dynamically allocated along a string of the communication nodes in a ring or linear topology in some embodiments. Direction of traffic transfer represents an additional possible degree of freedom in a ring topology, in that traffic can be transferred in either direction in a ring, such as the direction of least delay.

Abstract: A light emitting device includes a light-emitting diode (LED) light source module, a heat-dissipating unit and a phosphor-converted cover. The heat-dissipating unit is disposed below the LED light source module. The phosphor-converted cover covers the LED light source module. The phosphor-converted cover has an accommodating space, at least one air channel and a first air hole. The LED light source module is located in the accommodating space, and the first air hole is located above the LED light source module and connected to the air channel. An outside fluid passes through the accommodating space via the air channel to discharge heat generated by the LED light source module to outside via the first air hole. An aperture of the first air hole is between 0.01 millimeters and 1 millimeter.

Abstract: A variety of options for for fracture fixation after total hip arthroplasty or total knee arthroplasty. The ability to pre-engineer fracture fixation contingent solutions into femoral or tibial components provides a distinct clinical advantage in the planning and execution for periprosthetic fracture fixation. Methods and apparatus include targeting devices allowing for intimate association of fixed angle locking screws in pre-drilled holes in an existing prosthetic, femoral nail, or other components including additional fixation components. Such apparatus and methods further include alignment devices and other components to allow for ease of repair of periprosthetic fractures utilizing the pre-engineered solutions.

Abstract: A device for welding plastic tubes includes a pair of tube holders each of which has a tube clamp which includes an upper jaw and a lower jaw. The jaws in both of the tube clamps of both tube holders have smooth tube contacting walls to permit the tubing to slip through either side when the tube holders and tubes are being moved from a loading station to a stripping station to increase the length of fluid free area in the clamped tubes.

Abstract: Apparatus and methods relating to synchronization of communication equipment are disclosed. Synchronization information received from a bonded communication link can be used to synchronize local and/or remote communication equipment, such as femtocell sites coupled to nodes in a ring network. This may involve isolating a frequency reference signal from a DSL (Digital Subscriber Line) communication link which is a constituent link of a bonded communication link, for example. In a ring network, received synchronization information could be used in synchronizing a locally connected installation of communication equipment, and passed for transmission in the ring network for synchronizing other communication equipment. Such dropping and passing of an analog frequency reference signal could be applied in networks having other topologies as well. At least some embodiments of the invention are applicable to optical links.

Abstract: A computer-based system including: a memory unit configured to store computer readable instructions, path-dependent behavioral assumptions, and economic variables; and a processor configured to execute the computer readable instructions to perform a vectorized adjoint differentiation forward pass including: generating a full or pruned directed acyclic graph (DAG) representation of a procedure for computation of the behaviorally path-dependent value for the financial product; computing, using the DAG representation, the behaviorally path-dependent value for the financial product; and performing an adjoint differentiation backward pass on said full or pruned DAG representation to obtain a result.

Abstract: Apparatus and methods relating to synchronization of communication equipment are disclosed. Synchronization information received from a bonded communication link can be used to synchronize local and/or remote communication equipment, such as femtocell sites coupled to nodes in a ring network. This may involve isolating a frequency reference signal from a DSL (Digital Subscriber Line) communication link which is a constituent link of a bonded communication link, for example. In a ring network, received synchronization information could be used in synchronizing a locally connected installation of communication equipment, and passed for transmission in the ring network for synchronizing other communication equipment. Such dropping and passing of an analog frequency reference signal could be applied in networks having other topologies as well. At least some embodiments of the invention are applicable to optical links.

Abstract: A method of forming light emitting diode dies includes: forming an epitaxial layered structure that defines light emitting units on a front surface of a substrate wafer; forming a photoresist layer over a back surface of the substrate wafer; aligning the substrate wafer and patterning the photoresist layer so as to form openings in the photoresist layer, each of the openings having an area less than a projected area of the respective light emitting unit; forming a solder layer on the photoresist layer such that the solder layer fills the openings in the photoresist layer; removing the photoresist layer and a portion of the solder layer that covers the photoresist layer from the substrate wafer; and dicing the substrate wafer.

Abstract: A method for slicing a crystalline material ingot includes providing a crystalline material boule characterized by a cropped structure including a first end-face, a second end-face, and a length along an axis in a first crystallographic direction extending from the first end-face to the second end-face. The method also includes cutting the crystalline material boule substantially through a first crystallographic plane in parallel to the axis to separate the crystalline material boule into a first portion with a first surface and a second portion with a second surface. The first surface and the second surface are planar surfaces substantially along the first crystallographic plane. The method further includes exposing either the first surface of the first portion or the second surface of the second portion, and performing a layer transfer process to form a crystalline material sheet from either the first surface of the first portion or from the second surface of the second portion.