Abstract: A method of manufacturing an integrated circuit on semiconductor substrates. The method includes providing a semiconductor substrate characterized by a first lattice with a first structure and a first spacing. The semiconductor substrate has an overlying film of material with a second lattice with a second structure and a second spacing. Preferably, the second spacing placing the film of material in either a tensile or compressive mode across the entirety of the film of material relative to the semiconductor substrate with the first structure and the first spacing. The method includes processing the film of material to form a first region and a second region within the film of material. The first region and the second region are characterized by either the tensile or compressive mode. Preferably, both the first and second regions in their entirety are characterized by either the tensile or compressive mode.

Abstract: A system for manufacturing multilayered substrates. The system has a support member is adapted to process a film of material comprising a first side and a second side from a first state to a second state. The support member is attached to the first side of the film of material. The second state comprises a stressed state. The system has a handle substrate comprising a face, which is adapted to be attached to the second side of the film of material. The support member is capable of being detached from the first side of the film of material thereby leaving the handle substrate comprising the film of material in the second state being attached to the face of the handle substrate.

Abstract: A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside.

Abstract: A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside.

Abstract: Compositions for the treatment and/or prevention of cancer in a mammal by means of RNA interference are provided, together with methods for the use of such compositions. The compositions comprise a small interfering nucleic acid molecule (siNA) that suppresses expression of a target gene that: (a) is involved in an energy metabolism pathway, such as the glycolysis pathway, within a tumor cell; (b) is involved in the biosynthesis of nucleotides, in glycogen metabolism or is an electron carrier that works with ATP to provide metabolic energy; or (c) is involved in transport of sugars, amino acids, and/or water-soluble vitamins, control of intercellular pH, or drug transport within a tumor cell.

Abstract: A reforming and hydrogen purification system operating with minimal pressure drop for producing free hydrogen from different hydrogen rich fuels includes a hydrogen reforming catalyst bed in a vessel in communication with a core unit containing a hydrogen permeable selective membrane. The vessel is located within an insulated enclosure which forms an air inlet passageway and an exhaust passageway on opposite sides of the vessel. Air and raffinate pass through a burner within the air inlet passageway, providing a heated flue gas to heat the catalyst to the reaction temperature needed to generate free hydrogen from the feedstock. The burner flue gas flows laterally over and along the length of the bed between the input and output ends of the bed. Hydrogen is recovered from the core for use by a hydrogen-consuming device such as a fuel cell. The remaining unrecovered hydrogen in the reformed gases is contained in raffinate and is used to supply process heat via the burner.

Abstract: A computer-based system for valuing a customized indexed call option.

Abstract: A system for forming one or more detachable semiconductor films capable of being free-standing. The apparatus includes an ion source to generate a plurality of collimated charged particles at a first energy level. The system includes a linear accelerator having a plurality of modular radio frequency quadrupole (RFQ) elements numbered from 1 through N successively coupled to each other, where N is an integer greater than 1. The linear accelerator controls and accelerates the plurality of collimated charged particles at the first energy level into a beam of charge particles having a second energy level. RFQ element numbered 1 is operably coupled to the ion source. The system includes an exit aperture coupled to RFQ element numbered N of the RFQ linear accelerator. In a specific embodiment, the system includes a beam expander coupled to the exit aperture, the beam expander being configured to process the beam of charged particles at the second energy level into an expanded beam of charged particles.

Abstract: An apparatus and method for processing Hsync and Vsync signals in graphic controllers to avoid a false reading of pulses caused by glitches. The apparatus and method involve detecting when the synch signal crosses the threshold for the first time. When this occurs, the output of the detection circuit is held for the predetermined period of time, even if subsequent transitions across threshold occur during this period. After the predetermined period expires, the output is released and may assume the same state as the input sync signal at that time. In this manner, a misinterpretation of the resolution format caused by the reading of a “false” pulse caused by a glitch on a sync signal can be avoided.

Abstract: An apparatus and method for processing a video signal includes means for receiving the video signal, means for analyzing the video signal based upon a user supplied set of instructions, means for processing the video signal in accordance with the analysis, and means for outputting the processed video signal.

Abstract: A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of eventual separation. In a specific embodiment, the cleave layer comprising silicon germanium. The method also includes forming a device layer (e.g., epitaxial silicon) on the cleave layer. The method also includes introducing particles into the cleave layer to add stress in the cleave layer. The particles within the cleave layer are then redistributed to form a high concentration region of the particles in the vicinity of the cleave plane, where the redistribution of the particles is carried out in a manner substantially free from microbubble or microcavity formation of the particles in the cleave plane. That is, the particles are generally at a low dose, which is defined herein as a lack of microbubble or microcavity formation in the cleave plane.

Abstract: At a receiver incoming coded OFDM Symbol Data are passed through a Coarse Symbol Timing Synchronization module to determine the approximate start of the symbol. In one embodiment this is accomplished through correlation. The symbol is then passed through an FFT (2K or 8K, depending on the mode desired by the receiver). Since the Coarse Symbol Timing Synchronization module only determines an approximate start point of the symbol, a process of fine synchronization is used to adjust this approximate start point and determine a more accurate start point of the symbol. In this manner, the receiver is enabled to process COFDM symbols in DVB-T transmissions (where the symbols include a cyclic prefix to overcome echoes). One output of an FFT operation is magnitude. Magnitude is used for Channel Estimation (or Channel Correction). Another output of an FFT operation is phase discontinuity or rotations. Phase discontinuities are used in a fine synchronization process to determine the number of phase discontinuities.

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract: A vending apparatus has a housing and at least one rotatable dispensing coil disposed within the housing. The coil is vertically oriented and rotates in a manner such that products placed between the rungs of the coil move progressively downward during rotation until each product is ejected from a bottom end of the coil. There are retaining walls surrounding the coil on opposite sides of the coil. The walls extend an entire length of the coil but do not encompass the entire circumference of the coil, so that two longitudinal portions of the coil located opposite one another are not surrounded by the retaining walls. A product having a length exceeding the diameter of the coil can be placed in the coil for vending so that the ends of the product extend beyond the coil through the two portions not surrounded by the retaining walls. The retaining walls prevent the product from rotating when the coil rotates, and keep the product moving progressively down the coil until it is ejected from the coil.

Abstract: A white-light emitting device includes a first die and a second die. The first die has a first semiconductor light-emitting layer emitting a first primary color light. The second die has a second semiconductor light-emitting layer emitting a second primary color light, and a third semiconductor light-emitting layer mounted proximate to the second semiconductor light-emitting layer and emitting a third primary color light. The first primary color light is combined with the second and third primary color lights so as to produce white light.

Abstract: Determining a horizontal resolution and a phase of an analog video signal arranged to display a number of scan lines each formed of a number of pixels is described. A number of initialization values are set where at least one of the initialization values is a current horizontal resolution and then a difference value for each immediately adjacent ones of the pixels is determined. Next, an edge flag value based upon the difference value is stored in at least one of a number of accumulators such that when at least one of the accumulators has a stored edge flag value that is substantially greater than those stored edge flag values in the other accumulators, then the horizontal resolution is set to the current resolution.

Abstract: A fuel cell power system is protected from electromagnetic pulse energy damage through the use of a protective enclosure. In addition, electrical lines entering or exiting the system contain voltage or current spike suppression devices sufficient to prevent damage to the electronics contained within the enclosure. Also, any openings in the enclosure will have electromagnetic pulse attenuating grids or honeycomb covers, and any viewing ports through the enclosure may be protected with transparent conductive materials, such as indium tin oxide coated onto glass.

Abstract: A method of manufacturing an integrated circuit on semiconductor substrates. The method includes providing a semiconductor substrate characterized by a first lattice with a first structure and a first spacing. The semiconductor substrate has an overlying film of material with a second lattice with a second structure and a second spacing. Preferably, the second spacing placing the film of material in either a tensile or compressive mode across the entirety of the film of material relative to the semiconductor substrate with the first structure and the first spacing. The method includes processing the film of material to form a first region and a second region within the film of material. The first region and the second region are characterized by either the tensile or compressive mode. Preferably, both the first and second regions in their entirety are characterized by either the tensile or compressive mode.

Abstract: Systems and methods for creating virtual stop-off points in a movie title, where the viewer can explore interesting content using zoom, pan and gamma controls are provided. Methods include creating an interest point from one or more digital video titles. Systems include a composer for creating interest points in a video and a viewer for manipulating and displaying the interest points.

Abstract: A method for fabricating one or more devices, e.g., integrated circuits. The method includes providing a substrate (e.g., silicon), which has a thickness of semiconductor material and a surface region. The substrate also has a cleave plane provided within the substrate to define the thickness of semiconductor material. The method includes joining the surface region of the substrate to a first handle substrate. In a preferred embodiment, the first handle substrate is termed a “thin” substrate, which provides suitable bonding characteristics, can withstand high temperature processing often desired during the manufacture of semiconductor devices, and has desirable de-bonding characteristics between it and a second handle substrate, which will be described in more detail below. In a preferred embodiment, the first handle substrate is also thick enough and rigid enough to allow for cleaving according to a specific embodiment.