Abstract: An optical semiconductor element includes a semiconductor substrate, a first laminated structure provided on a front surface of the semiconductor substrate, and a second laminated structure provided on the front surface of the semiconductor substrate, the first laminated structure includes a first quantum cascade region, the second laminated structure includes a dummy region having the same layer structure as the first quantum cascade region, a second quantum cascade region provided on the front surface of the semiconductor substrate via the dummy region, and one of the first quantum cascade region and the second quantum cascade region is a quantum cascade laser, and the other of the first quantum cascade region and the second quantum cascade region is a quantum cascade detector.
Abstract: The present embodiment relates to a surface emitting type light-emitting element mainly including a nitride semiconductor and a layer for forming a resonance mode. The light-emitting element increases the optical confinement coefficient of a layer forming a resonance mode, includes an active layer, a phase modulation layer, and one or more high refractive index layers, and further includes, first and second cladding layers sandwiching the active layer, the phase modulation layer, and the high refractive index layer. The phase modulation layer includes a base layer and modified refractive index regions. The gravity centers of the modified refractive index regions are arranged on a straight line passing through each lattice point of a virtual square lattice and tilted with respect to the square lattice. The distance between the gravity center of each modified refractive index region and the lattice point is individually set according to the optical image.
June 5, 2019
July 22, 2021
HAMAMATSU PHOTONICS K.K.
Yuta AOKI, Kazuyoshi HIROSE, Satoru OKAWARA
Abstract: The present embodiment relates to a light emission device capable of removing zero-order light from output light of an S-iPM laser. The light emission device comprises an active layer and a phase modulation layer. The phase modulation layer includes a base layer and a plurality of modified refractive index regions. In a state in which a virtual square lattice is set on the phase modulation layer, a center of gravity of each modified refractive index region is separated from a corresponding lattice point, and a rotation angle around each lattice point that decides a position of the center of gravity of each modified refractive index region is set according to a phase distribution for forming an optical image. A lattice spacing and an emission wavelength satisfy a condition of M-point oscillation in a reciprocal lattice space of the phase modulation layer.
Abstract: A radiation position detection method includes: a first step of calculating a first centroid position in an incident direction regarding positions where scintillation light is detected, on the basis of electrical signals; and a second step of specifying, on the basis of a first table showing first identification regions for identifying the plurality of segments, and the first centroid position, the segment that initially generates the scintillation light. The first identification region includes a first region, a second region, and a third region. In the second step, in a case where the first centroid position is located in the first region or the third region, the first segment is specified as the segment that initially generates the scintillation light, and in a case where the first centroid position is located in the second region, the second segment is specified as the segment that initially generates the scintillation light.
Abstract: A laminated element manufacturing method includes a first forming step of forming a first gettering region for each of functional elements by irradiating a semiconductor substrate of a first wafer with a laser light, a first grindsing step of grinding the semiconductor substrate of the first wafer and removing a portion of the first gettering region, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second gettering region for each of the functional elements by irradiating the semiconductor substrate of the second wafer with a laser light, and a second grinding step of grinding the semiconductor substrate of the second wafer and removing a portion of the second gettering region.
July 13, 2018
Date of Patent:
July 20, 2021
HAMAMATSU PHOTONICS K.K.
Takeshi Sakamoto, Ryuji Sugiura, Yuta Kondoh, Naoki Uchiyama
Abstract: A movable diffraction grating includes; a supporting portion; a movable portion which includes a first surface and is swingably connected with the supporting portion; a resin layer which is provided on the first surface and includes a diffraction grating pattern formed therein; a reflection layer which is provided on the resin layer an along the diffraction grating pattern and is formed of metal; and a stress regulation portion inducing stress on the movable portion, and the first surface is caused to bend concavely by stress.
Abstract: An optical module includes a mirror unit and a beam splitter unit. The mirror unit includes a base with a main surface, a movable mirror, a first fixed mirror, and a drive unit. The beam splitter unit constitutes a first interference optical system for measurement light along with the movable mirror and the first fixed mirror. A mirror surface of the movable mirror and a mirror surface of the first fixed mirror follow a plane parallel to the main surface and face one side in a first direction perpendicular to the main surface. The movable mirror, the drive unit, and at least a part of an optical path between the beam splitter unit and the first fixed mirror are disposed in an airtight space.
Abstract: A spectroscopic measurement device emits light to a measurement target and measures the measurement light output from the measurement target in accordance with the light emission. A spectroscopic measurement device includes: a first housing having a light shielding property and configured to house a light source that emits light and having a first opening through which the light emitted from the light source passes; a second housing having a light shielding property and having a second opening through which the measurement light passes and configured to house a spectrometer that receives the measurement light that has passed through the second opening; and an arm member configured to relatively rotatably join the first housing and the second housing. A proximal end side of the arm member is rotatably joined with the second housing. The first housing is attached to a distal end side of the arm member.
Abstract: A spectroscopic module includes a plurality of beam splitters that are arranged along an X direction; a plurality of bandpass filters disposed on one side in a Z direction with respect to the plurality of beam splitters facing the plurality of beam splitters, respectively; a light detector disposed on the one side in the Z direction with respect to the plurality of bandpass filters and including a plurality of light receiving regions facing the plurality of bandpass filters, respectively; a first support body supporting the plurality of beam splitters; and a second support body supporting the plurality of bandpass filters. The second support body includes a support portion in which a support surface is formed so as to be open to the one side in the Z direction. The plurality of bandpass filters are disposed on the support surface.
Abstract: A spectroscopic module includes M beam splitters that are arranged along an X direction, where M is a natural number of 2 or more; M bandpass filters disposed on one side in a Z direction with respect to the M beam splitters, each of the M bandpass filters facing each of the M beam splitters; a light detector disposed on the one side in the Z direction with respect to the M bandpass filters and includes M light receiving regions, each of the M light receiving regions facing each of the M bandpass filters; a first support body supporting the M beam splitters; and a second support body supporting the M bandpass filters. Each of N beam splitters among the M beam splitters has a plate shape and has a thickness of 1 mm or less, where N is a natural number of 2 to M.
Abstract: In a spectroscopic module, a light shielding member is disposed between a plurality of bandpass filters and a light detector. The light shielding member includes a plurality of wall portions. The plurality of wall portions are arranged along an X direction with a light passage opening interposed therebetween, each of a plurality of optical paths from the plurality of bandpass filters to a plurality of light receiving regions passing through the light passage opening. A first wall portion and a second wall portion adjacent to each other among the plurality of wall portions are in contact with the bandpass filter, the bandpass filter corresponding to the light passage opening between the first wall portion and the second wall portion. A width in a Y direction of the light passage opening is larger than a width in the Y direction of the bandpass filter.
Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
Abstract: An optical module 1A includes a mirror unit 2 including a movable mirror 22 and a fixed mirror 16, a beam splitter unit 3, a light incident unit 4, a first light detector 6, a second light source 7, a second light detector 8, a holding unit 130, a first mirror 51, a second mirror 52, and a third mirror 53. The holding unit 130 holds the first light detector 6, the second light detector 8, and the second light source 7 so as to face that same side, and to be aligned in this order. A length of an optical path between the unit 3 and the detector 6 is shorter than a length of an optical path between the unit 3 and the detector 8, and a length of an optical path between the unit 3 and the source 7.
Abstract: In accordance with an irradiation position of pulsed light, a selecting unit outputs a first transfer signal to a first transfer electrodes and outputs a second transfer signal to a second transfer electrodes, to allow signal charges to flow into first and second signal charge-collecting regions of a pixel corresponding to the irradiation position, and outputs a third transfer signal to a third transfer electrodes to allow unnecessary charges to flow into an unnecessary charge-discharging regions of a pixel other than the pixel corresponding to the irradiation position. An arithmetic unit reads out signals corresponding to respective quantities of signal charges collected in the first and second signal charge-collecting regions of the pixel selected by the selecting unit, and calculates a distance to an object based on a ratio between a quantity of signal charges collected in the first signal charge-collecting regions and a quantity of signal charges collected in the second signal charge-collecting regions.
May 28, 2015
Date of Patent:
July 6, 2021
HAMAMATSU PHOTONICS K.K.
Mitsuhito Mase, Jun Hiramitsu, Akihiro Shimada
Abstract: A Fabry-Perot interference filter includes: a substrate having a first surface and a second surface facing each other; a first layer structure disposed on the first surface; and a second layer structure disposed on the second surface, wherein the first layer structure is provided with a first mirror portion and a second mirror portion facing each other with an air gap therebetween, and a distance between the first mirror portion and the second mirror portion is varied, and the second layer structure is formed with a separation region separating at least a part of the second layer structure into one side and another side in a direction along the second surface.
Abstract: A tomographic image prediction apparatus includes an input unit, a prediction unit, an output unit, and a learning unit. The tomographic image prediction apparatus inputs a tomographic image of a brain of a subject as an input image, and predicts a tomographic image of the brain of the subject after the acquisition of the input tomographic image by a deep neural network in the prediction unit, and outputs the predicted tomographic image as an output image. The tomographic image prediction apparatus is capable of training the deep neural network using a tomographic image database.
Abstract: A mirror unit includes a mirror device, a light incident/emission portion, and a support portion. The mirror device includes a base, a movable mirror, and a drive unit. The light incident/emission portion includes a first joining portion joined to a region that is located between a first electrode pad and a second electrode pad, and at least one of the movable mirror and the drive unit in a first surface of the base, and a first main body portion. The support portion includes a second joining portion joined to a region that overlaps each of the first electrode pad and the second electrode pad when viewed from a first direction in a second surface of the base, and a second main body portion. The first main body portion is provided with a first light passage region that overlaps a mirror surface of the movable mirror when viewed from the first direction.
Abstract: A semiconductor device inspection method of inspecting a semiconductor device which is an inspection object includes: a step of inputting a stimulation signal to the semiconductor device; a step of acquiring a detection signal based on a reaction of the semiconductor device to which the stimulation signal has been input; a step of generating a first in-phase image and a first quadrature image including amplitude information and phase information in the detection signal based on the detection signal and a reference signal generated based on the stimulation signal; and a step of performing, a filtering process of reducing noise on at least one of the first in-phase image and the first quadrature image and then generating a first amplitude image based on the first in-phase image and the first quadrature image.
Abstract: Provided is a sample support body that includes a substrate, an ionization substrate, a support, and a frame. The ionization substrate has a plurality of measurement regions for dropping a sample on second surface. A plurality of through-holes that open in a first surface and the second surface are formed at least in the measurement regions of the ionization substrate. A conductive layer is provided on peripheral edges of the through-holes at least on the second surface. The frame has a wall provided on peripheral edges of the measurement regions on the second surface to separate the plurality of measurement regions when viewed in the direction in which the substrate and the ionization substrate face each other.
Abstract: A method for manufacturing an optical device includes: preparing a semiconductor substrate that includes a portion corresponding to a base, a movable unit, and an elastic support portion; forming a first resist layer in a region corresponding to the base on a surface of a first semiconductor layer which is opposite to an insulating layer; forming a depression in the first semiconductor layer by etching the first semiconductor layer using the first resist layer as a mask; forming a second resist layer in a region corresponding to a rib portion on a bottom surface of the depression, a side surface of the depression, and the surface of the first semiconductor layer which is opposite to the insulating layer; and forming the rib portion by etching the first semiconductor layer until reaching the insulating layer using the second resist layer as a mask.