Abstract: In a signal processing circuit, an input terminal is configured to receive an analog signal output from an avalanche photodiode operating in Geiger mode. A comparison circuit outputs a signal based on a component exceeding a threshold among components a signal input to the comparison circuit. The adjustment circuit includes an AC coupling unit, a level shifter unit, and a reference value adjustment unit. The AC coupling unit establishes AC coupling between the input terminal and the comparison circuit. The level shifter unit adjusts the voltage of the signal input to the comparison circuit to a value lower than a reverse bias voltage applied to the avalanche photodiode. The reference value adjustment unit adjusts the reference value of the signal input to the comparison circuit.

Abstract: An inspection device includes a laser irradiation unit irradiating a wafer with laser light, a display displaying information, and a control unit. The control unit is constituted to execute deriving of an estimated processing result including information a modified region and a crack extending from the modified region formed on the wafer when the wafer is irradiated with the laser light by the laser irradiation unit on the basis of set recipes (processing conditions), and controlling the display so as to display an estimated processing result image depicting both a graphic image of the wafer and a graphic image of the modified region and the crack in the wafer in consideration of positions of the modified region and the crack in the wafer derived as the estimated processing result.

Abstract: The light detector includes a light detection substrate having at least one light receiving region and a light incident surface on which a detection target light is incident, and a meta-lens including a plurality of unit structures arranged in a grid pattern and disposed on the light incident surface to focus the detection target light. When viewed in a thickness direction of the light detection substrate, an opening region in which no unit structure is formed is provided in a region including a center of the meta-lens.

Abstract: A semiconductor substrate including a first main surface and a second main surface opposing each other is provided. The semiconductor substrate includes a first semiconductor region of a first conductivity type. The semiconductor substrate includes a plurality of planned regions where a plurality of second semiconductor regions of a second conductivity type forming pn junctions with the first semiconductor region are going to be formed, in a side of the second main surface. A textured region is formed on surfaces included in the plurality of planned regions, in the second main surface. The plurality of second semiconductor regions are formed in the plurality of planned regions after forming the textured region. The first main surface is a light incident surface of the semiconductor substrate.

Abstract: A laser processing device includes: a laser irradiation unit; and a control unit. The control unit is configured to execute a first control to control the laser irradiation unit to form modified regions for division along each of lines extending in an X direction and cracks extending from the modified regions in a direction of a surface, a second control to control the laser irradiation unit to form modified regions for division along each of a plurality of lines in a Y direction and cracks extending from the modified regions in the direction of the surface, and a third control to control the laser irradiation unit to form cracks extending from a plurality of modified regions for suppressing warpage before the second control, the cracks being formed to reach a back surface and not to be continuous with the cracks extending from the modified regions for division.

Abstract: A photodetector includes a semiconductor photodetection element including a semiconductor layer having a first surface and a second surface, and a light-condensing structure disposed on the first surface. The semiconductor layer includes a plurality of photodetection units. The light-condensing structure includes a main body portion and a metal layer. The main body portion has a plurality of first openings arranged to correspond to the plurality of photodetection units, and includes a plurality of layers stacked on the first surface. The metal layer covers an inner surface of each of the plurality of first openings to expose a region corresponding to each of the plurality of first openings in a surface of the semiconductor photodetection element. A surface of the metal layer in each of the plurality of first openings has a shape that spreads out to a side opposite to the semiconductor photodetection element.

Abstract: The radiation detector includes a scintillator, first and second semiconductor photodetectors, a first wiring member electrically connected to the first semiconductor photodetector, and a second wiring member electrically connected to the second semiconductor photodetector. The scintillator includes a pair of end surfaces opposing each other in a first direction and first and second side surfaces opposing each other in a second direction intersecting the first direction, and has a rectangular shape when viewed in the first direction. The first and second side surfaces couple the pair of end surfaces. The first semiconductor photodetector includes a first semiconductor substrate disposed to oppose the first side surface. The second semiconductor photodetector includes a second semiconductor substrate disposed to oppose the second side surface.

Abstract: An X-ray generator includes: a cathode electrode configured to emit electrons; an adjustment electrode configured to adjust an amount of electrons emitted from the cathode electrode; a control electrode configured to control a trajectory of the electrons from the cathode electrode; a target configured to generate an X-ray by incidence of the electrons; a discharge detection unit configured to detect discharge between the cathode electrode and the adjustment electrode; and a deflection switching unit configured to switch a deflection state of the electrons E directed toward the target such that a focal position of the electrons on the target during discharge detection deviates from the focal position of the electrons E on the target during normal operation.

Abstract: A polarization splitting device includes a substrate, and a polarization splitting layer having a structure element pattern including a plurality of structure elements each having two-fold rotational symmetry, and formed on an upper surface of the substrate. The polarization splitting layer splits first to sixth polarization components included in object light, and focuses respectively at first to sixth focal positions on a focal plane. The structure element pattern includes a first structure element pattern for focusing the first and second polarization components, a second structure element pattern for focusing the third and fourth polarization components, and a third structure element pattern for focusing the fifth and sixth polarization components, and a pattern constituted by a first structure element, a second structure element, and a third structure element is set as a unit pattern, and a plurality of unit patterns are two-dimensionally arranged.

Abstract: An X-ray generator includes: a cathode electrode configured to emit electrons; an adjustment electrode configured to adjust an amount of electrons emitted from the cathode electrode; a control electrode configured to control a trajectory of the electrons from the cathode electrode; a target configured to generate an X-ray by incidence of the electrons; a discharge detection unit configured to detect discharge between the cathode electrode and the adjustment electrode; and a voltage switching unit configured to switch a voltage difference between the cathode electrode and the control electrode such that a focal dimension of the electrons on the target during discharge detection is larger than the focal dimension of the electrons on the target during normal operation.

Abstract: An arithmetic device that calculates a gain of a photomultiplier tube includes: an acquisition unit that acquires a digital signal based on a dark pulse output from the photomultiplier tube placed in a dark state; and a calculation unit that calculates a total number of electrons in the dark pulse based on the digital signal and calculates the gain of the photomultiplier tube based on the total number of electrons.

Abstract: A brain measurement apparatus configured to generate an MR image and a brain's magnetic field distribution of a subject includes: an MRI module having a transmission coil configured to transmit a transmission pulse toward the subject and a detection coil configured to detect a nuclear magnetic resonance signal generated in the subject by the transmission pulse; an optically pumped magnetometer configured to detect a brain's magnetic field of the subject; a generator configured to generate the MR image based on the nuclear magnetic resonance signal detected by the detection coil and generating the brain's magnetic field distribution based on the brain's magnetic field detected by the optically pumped magnetometer; a marker displayed on the MR image generated by the generator; and a helmet-type frame to which the detection coil, the optically pumped magnetometer, and the marker are attached and which is attached to a head of the subject.

Abstract: A method for manufacturing a mirror device, the method includes a first step of preparing a wafer having a support layer, a device layer, and an intermediate layer; a second step of forming a slit in the wafer such that the movable portion becomes movable with respect to the base portion by removing a part of each of the support layer, the device layer, and the intermediate layer from the wafer and forming a plurality of parts each corresponding to the structure in the wafer, after the first step; a third step of performing wet cleaning using a cleaning liquid after the second step; and a fourth step of cutting out each of the plurality of parts from the wafer after the third step. In the second step, a part of the intermediate layer is removed from the wafer by anisotropic etching.

Abstract: A radiation tomography system includes a radiation tomography apparatus and an image processing apparatus. The image processing apparatus includes an image reconstruction unit, an attenuation distribution image creation unit, and an attenuation correction unit. The attenuation distribution image creation unit includes a first processing unit and a second processing unit. The first processing unit creates and outputs an intermediate image based on an emission scan image using a trained neural network. The second processing unit creates and outputs an attenuation distribution image based on the intermediate image.

Abstract: There is provided an optical member for terahertz. The optical member is constituted by a molded body containing a mixture of an organic nonlinear optical material and an excipient. There is also provided an optical element including: the optical member; and a support member configured to support the optical member. There is also provided a method for manufacturing an optical member for terahertz. The method includes: a first process of mixing an organic nonlinear optical material and an excipient to form a mixture; and a second process of forming a molded body of the mixture by applying a pressure to the mixture after the first process.

Abstract: An OCT system includes a broadband light source and illumination optics that projects the generated broadband light to a sample where the light is scattered from within the sample in a direction that is normal to a surface of the sample to form a sample beam and is reflected from a top surface of the sample in a direction that is normal to the surface of the sample to form a reference beam where the sample beam and reference beam co-propagate. Collection optics collect light in the sample and reference beams and project the light to an interferometric combiner. The interferometric combiner is configured to interferometrically the collected light from the sample beam and collected light from the reference beam and to project the interferometrically combined light to a spectrometer that generates spectral interferometric information to determine information about the sample.

Abstract: A laser processing method including: a first step of preparing a wafer having a first region and a second region; a second step of irradiating the street with a predetermined first laser beam; and a third step of irradiating the street with a predetermined second laser beam after the second step, the first laser beam being a laser beam having processing energy for removing a part of the insulating film in the first region to leave the other part, completely removing the metal structure in the second region, and removing a part of the insulating film in the second region to leave the other part, and the second laser beam being a laser beam having processing energy for completely removing the insulating film in the first region and the insulating film in the second region after the second step.

Abstract: A spectroscopic analyzer according to an embodiment includes: a Fabry-Perot QCL element configured to emit a laser light including a plurality of mode lights respectively corresponding to a plurality of modes indicating a discrete oscillation spectrum; a diffraction grating configured to disperse the laser light emitted from the QCL element into the plurality of mode lights; and a light detector configured to detect the mode light dispersed by the diffraction grating and then transmitted through a sample.

Abstract: A production method for an ultraviolet light-emitting body containing Sc:YPO4 crystals, the method containing: subjecting a raw material to a hydrothermal reaction to obtain a precursor, the raw material containing a Sc source, a Y source, and a PO4 source; and firing the precursor.

Abstract: There is provided a processing condition acquisition method for acquiring conditions of laser processing for forming a weakened region in a functional element layer by irradiating an object with laser light from a first surface side, the object including a substrate including a first surface and a second surface opposite to the first surface, and the functional element layer provided on the second surface of the substrate, the method including: a first step of performing first processing as the laser processing a plurality of times at different positions in the first surface while changing a converging position of the laser light in a Z direction intersecting the first surface within a range including an interface between the substrate and the functional element layer.