Abstract: An actuator device includes a support portion; a first movable portion; a second movable portion; a first connection portion that connects the first and second movable portions such that the first movable portion is swingable around a first axis; a second connection portion that connects the second movable portion and the support portion such that the first movable portion is swingable around the first axis. Two natural angular frequencies ?1 and ?2 (where ?1<?2) for vibration of the first and second movable portions around the first axis satisfy one of the following equation (1) and equation (2) and do not satisfy the other, [ Equation ? 1 ] ? 0 < 1 - ( ? 1 ? ii ) 2 ? 0.2 ( 1 ) [ Equation ? 2 ] ? 0 < ( ? 2 ? ii ) 2 - 1 ? 0.

Abstract: A quantum cascade laser device includes a semiconductor substrate, an active layer provided on the semiconductor substrate, and an upper clad layer provided on a side of the active layer opposite to the semiconductor substrate side and having a doping concentration of impurities of less than 1×1017 cm?3. Unit laminates included in the active layer each include a first emission upper level, a second emission upper level, and at least one emission lower level in their subband level structure. The active layer is configured to generate light having a center wavelength of 10 ?m or more due to electron transition between at least two levels of the first emission upper level, the second emission upper level, and the at least one emission lower level in the light emission layer in each of the unit laminates.

Abstract: The light source unit includes a base provided with an opening, a support member fixed to the base at the opening, and a light source assembly fixed to the support member at the opening. The light source assembly includes a light source emitting laser light, a lens disposed on an optical axis of the laser light, and a holding member holding the light source and the lens. The support member has a convex receiving surface extending along the spherical surface so as to surround the optical axis when viewed from a direction parallel to the optical axis. The light source assembly is fixed to the support member by coupling the holding member to the receiving surface at a contact portion with the receiving surface. The receiving surface has a portion located on a side away from the optical axis with respect to a coupling part with the holding member.

Abstract: A semiconductor substrate has a first main surface and a second main surface that oppose each other and a plurality of cells that are arrayed two-dimensionally in a matrix. Each cell includes at least one avalanche photodiode arranged to operate in a Geiger mode. A trench penetrating through the semiconductor substrate is formed in the semiconductor substrate to surround each cell when viewed in a direction orthogonal to the first main surface. A light-shielding member optically separates mutually adjacent cells of the plurality of cells. The light-shielding member includes a first portion extending in a thickness direction of the semiconductor substrate between an opening end of the trench at the first main surface and an opening end of the trench at the second main surface and a second portion projecting out from the second main surface. The insulating film includes a portion that covers the second portion.

Abstract: The present embodiment relates to a light-emitting device comprising a reflective metasurface modulating a phase for each of pixels constituting a one- or two-dimensional array. The light-emitting device comprises a surface emitting laser element, a light guide layer, and the metasurface. The metasurface has a light transmissive layer including a dielectric layer, one metal film on one surface thereof, and the other metal film on the other surface thereof. In each of unit regions corresponding to the pixels, the light transmissive layer includes a portion exposed without being covered with the metal film. The width of each unit region and the thickness of the light transmissive layer are smaller than the wavelength of the laser light to the metasurface. The metasurface modulates the phase of the laser light for each unit region. A first light output surface outputs the modulated laser.

Abstract: An object cutting method includes: a first step of preparing an object to be processed including a single crystal silicon substrate and a functional device layer provided on a first main surface side; a second step of irradiating the object with laser light to form at least one row of modified regions in the single crystal silicon substrate and to form a fracture in the object so as to extend between the at least one row of modified regions and a second main surface of the object; a third step of forming an etching protection layer having a gas passing region formed, on the second main surface; and a fourth step of performing dry etching on the object from the second main surface side, in a state in which the etching protection layer is formed on the second main surface, to form a groove opening to the second main surface.

Abstract: A semiconductor device examination method includes a step of acquiring a first interference waveform based on signals from a plurality of drive elements according to light from a first light beam spot including the plurality of drive elements in a semiconductor device, a step of acquiring a second interference waveform based on signals from the plurality of drive elements according to light from a second light beam spot having a region configured to partially overlap the first spot and including the plurality of drive elements, and a step of separating a waveform signal for each of the drive elements in the first and second spots based on the first and second interference waveforms.

Abstract: This laser processing apparatus includes an irradiation unit and a controller. The irradiation unit has a spatial light modulator and a converging part. The controller executes first control for causing the laser light to be modulated by the spatial light modulator such that the laser light is branched into a plurality of rays of processing light and a plurality of converging points of the plurality of rays of processing light are positioned in different positions in a direction perpendicular to an irradiation direction of the laser light. In the first control, the laser light is modulated such that the modified region is present between a converging point of non-modulated light of the laser light and an opposite surface on a side opposite to a laser light incidence surface of the object in the irradiation direction.

Abstract: This laser processing apparatus includes an irradiation unit and a controller. The irradiation unit has a spatial light modulator and a converging part. The controller executes first control for causing the laser light to be modulated such that the laser light is branched into a plurality of rays of processing light and a plurality of converging points of the plurality of rays are positioned in different positions in a direction perpendicular to an irradiation direction of the laser light. In the first control, the laser light is modulated such that fractures that extend from a plurality of modified spots constituting the modified region and stretch along the virtual plane to be connected to each other are present between a converging point of non-modulated light of the laser light and an opposite surface on a side opposite to a laser light incidence surface of the object in the irradiation direction.

Abstract: A film thickness measurement apparatus includes a light source that irradiates a sample with light, an area sensor that detects light from the sample and outputs a signal according to luminance information of the detected light, a spectrometer that spectrally detects light from the sample and outputs a signal according to wavelength information including a spectrum of the light, and a control apparatus that estimates a film thickness of the sample on the basis of the luminance information specified from the signal output from the area sensor and the wavelength information specified from the signal output from the spectrometer.

Abstract: There is provide a method for determining whether a subject has developed or is suspected to have developed prostate cancer is provided, the method including: comparing a prostate-specific antigen (PSA) level in serum with a first threshold value; comparing an ?1-antitrypsin (AAT) level in urine with a second threshold value; and determining whether a subject in which the PSA level in serum is the first threshold value or more and the AAT level in urine is the second threshold value or more has developed or is suspected to have developed prostate cancer.

Abstract: An image acquisition device includes a mask member that includes a mask pixel that changes a transmittance of some parallel waves from a subject on a plane intersecting with an incident direction of the parallel wave, a detector that includes a plurality of pixels that is arranged in a direction intersecting with the incident direction of the parallel wave and detects the parallel wave that has passed through the mask member, and an image processing device that reconstructs an image using compressed sensing based on data regarding a relative moving amount between the mask member and the subject and detection signals of the plurality of pixels input from the detector, in which a size of the mask pixel of the mask member on the plane is smaller than a size of the plurality of pixels along the plane.

Abstract: An element distribution measurement apparatus is an apparatus for measuring a distribution of a content rate of each element contained in a measurement sample, and includes a measurement unit and an operation unit. The measurement unit acquires projection data by making rays of radiation of each of a plurality of spectra incident on the measurement sample. The operation unit obtains the distribution of the content rate of each element based on a distribution of a linear attenuation coefficient of the measurement sample obtained for each of the spectra based on the projection data, and a formula of the linear attenuation coefficient represented by using a value of a mass attenuation coefficient of each element, a value of an atomic weight of each element, a variable of the content rate of each element, and a variable of a density of the measurement sample for each of the spectra.

Abstract: A mirror device includes a support portion, a movable portion, and a pair of torsion bars disposed on both sides of the movable portion on a first axis. The movable portion includes a frame-shaped frame connected to the pair of torsion bars and a mirror unit disposed inside the frame. The mirror unit is connected to the frame in each of a pair of connection regions located on both sides of the mirror unit in a direction parallel to a second axis. A region other than the pair of connection regions in a region between the mirror unit and the frame is a space. An outer edge of the mirror unit and an inner edge of the frame are connected to each other so that a curvature in each of the pair of connection regions is continuous when viewed from a direction perpendicular to the first and the second axes.

Abstract: A scanning microscope unit includes: a light source for outputting irradiation light; a photodetector; a MEMS mirror for scanning an irradiation light over an observation object, and for guiding an observation light toward the photodetector; a scanning lens for guiding the irradiation light scanned by the MEMS mirror, to a microscope optical system, and for guiding the observation light imaged by the microscope optical system, to the MEMS mirror; and a frame member formed in a frame shape to define an opening, and disposed on a side of the microscope optical system with respect to the scanning lens such that the irradiation light and the observation light pass through the opening. The frame member includes a calibration portion provided in a side portion defining the opening, and for generating calibration light including a sensitivity wavelength of the photodetector in response to an incidence of the irradiation light.

Abstract: The mass spectrometer includes a sample stage, an irradiation unit that irradiates the sample with an energy beam and ionizes a component of the sample, an extraction electrode that extracts the ionized sample from the surface of the sample by a potential difference from the sample stage, an MCP that emits electrons in accordance with the ionized sample, an imaging part that acquires an image based on the electrons emitted by the MCP, and a control unit that controls operations of the irradiation unit, the extraction electrode, and the imaging part. The control unit changes the potential of the extraction electrode at a timing in accordance with the detection target component after the irradiation of the energy beam by the irradiation unit, and causes the imaging part to acquire an image as an analysis target in a period in accordance with the detection target component.

Abstract: A spectroscopic unit includes a housing, a light incident portion provided in the housing, a Fabry-Perot interference filter arranged in the housing and having a first mirror and a second mirror, a distance between the first mirror and the second mirror being variable. The light incident portion includes an aperture portion in which an aperture is formed and a band pass filter arranged between the aperture and the Fabry-Perot interference filter. The aperture portion is configured so that a value obtained by dividing a length of the aperture in a facing direction of the first mirror and the second mirror by a width of the aperture in a direction perpendicular to the facing direction is equal to or more than 0.5 and the entirety of light passing through the aperture is incident on the band pass filter.

Abstract: In an APD array, a plurality of APDs include a first semiconductor layer, a plurality of second semiconductor layers, and a multiplication layer. The first semiconductor layer is provided closer to the second surface than a semiconductor region. The plurality of second semiconductor layers are arranged along a first surface. The multiplication layer is provided within the semiconductor region and provided between the plurality of second semiconductor layers and the first semiconductor layer in a direction perpendicular to the first surface. Each of a third semiconductor layer and a fourth semiconductor layer of the multiplication layer is continuously provided so as to overlap the plurality of second semiconductor layers when viewed in the direction perpendicular to the first surface. The third semiconductor layer is provided closer to the first surface than the fourth semiconductor layer.

Abstract: A processing device forms, in an object to be processed, a modified spot constituting a modified region. The processing device includes a first irradiation unit configured to irradiate the object with first light to temporarily increase absorptivity in a partial region of the object as compared with the absorptivity before irradiation of the first light, and a second irradiation unit configured to irradiate the partial region with second light in an absorptivity increase period in which the absorptivity of the partial region is temporarily increased.

Abstract: A sample observation device includes a sample container that holds the sample stained with a first fluorescent substance and a solution including a second fluorescent substance, an irradiation unit that performs irradiation with first excitation light and second excitation light, a scanning unit that scans the sample container in one direction, an image formation unit that forms first fluorescent light from the sample and second fluorescent light from the solution, an imaging unit that outputs first image data based on the first fluorescent light and first image data based on the second fluorescent light, an image processing unit that generates a first fluorescent light image based on a plurality of pieces of first image data and a second fluorescent light image based on a plurality of pieces of second image data, and an analysis unit that specifies an area in which there is the sample on the basis of the second fluorescent light image and sets an analysis area in the first fluorescent light image.