Abstract: A method for manufacturing a mirror device, the method includes a first step of preparing a wafer having a support layer and a device layer; a second step of forming a slit in the wafer such that the movable portion becomes movable with respect to the base portion by removing a part of each of the support layer and the device layer from the wafer by etching and forming a plurality of parts each corresponding to the structure in the wafer, after the first step; a third step of performing wet cleaning for cleaning the wafer using a cleaning liquid after the second step; and a fourth step of cutting out each of the plurality of parts from the wafer after the third step. In the second step, a circulation hole penetrating the wafer is formed at a part other than the slit in the wafer by the etching.

Abstract: The present invention relates to a method for assessing mitochondrial function in a tissue or organ other than the kidney in a test subject, including: a step of calculating a ratio (BUN/CRE) of blood urea nitrogen (BUN) concentration to blood creatinine (CRE) concentration in a test subject; and a step of estimating mitochondrial activity in a tissue or organ other than the kidney in the test subject using the calculated ratio (BUN/CRE).

Abstract: The ion sensor includes a substrate and a plurality of detection units. Each detection unit includes an ID portion, an ICG electrode, a TG electrode, an SG electrode, an electrode pad, and an ion sensitive film. The SG electrode is disposed between the ICG electrode and the TG electrode on the main surface of the substrate. The electrode pad is electrically connected to the SG electrode and disposed on the opposite side of the SG electrode from the substrate. The ion sensitive film is provided on the surface of the electrode pad, and changes a potential according to change in ion concentration of the aqueous solution in contact with the ion sensitive film. A width of the ion sensitive film in a facing direction in which the ICG electrode and the TG electrode face each other is greater than a separation width between the ICG electrode and the TG electrode.

Abstract: There are provided a light-emitting element, an optical detection module, a method for manufacturing a light-emitting element, and a scanning electron microscope using the same, by which it is possible to reduce crosstalk and expand the range of applications. A light-emitting element includes a fiber optic plate substrate having transparency to fluorescence and a light-emitting layer as a nitride semiconductor layer having a quantum well structure. In the light-emitting element, the fiber optic plate substrate and the light-emitting layer are directly bonded to each other.

Abstract: An intra-oral imaging device includes: an imager that detects radiation transmitted through an object while being placed in an oral cavity; and a controller that controls the imager while being placed outside the oral cavity. The imager includes an image sensor including a plurality of pixels for acquiring an image of the object. While power is being supplied to the controller, the controller supplies power to the image sensor in an imaging period during which the image sensor performs imaging and stops supplying the power to the image sensor in a standby period during which the image sensor is on standby.

Abstract: An SLM includes a modulation unit and a driving circuit. The modulation unit includes a plurality of pixels, and modulates a phase or an intensity of incident light in each pixel according to an amplitude of a drive signal changing periodically with time. The driving circuit provides the drive signal to the modulation unit. The driving circuit performs control such that a phase of the drive signal V1(t) provided to a first pixel group in the plurality of pixels and a phase of the drive signal V2(t) provided to a second pixel group in the plurality of pixels are mutually inverted.

Abstract: A phantom design method includes a correction step and a calculation step. In the correction step, an absorption spectrum of a target of spectroscopic measurement by a near infrared spectrometer is corrected based on a refractive index of the target and a refractive index of a resin used as a base material of a phantom to generate a corrected absorption spectrum. In the calculation step, based on an absorption spectrum of the resin and an absorption spectrum of each of N types of dyes, a concentration of each of the N types of dyes to be contained in the base material is calculated such that an absorption spectrum of the phantom constituted by the base material containing the N types of dyes approximates the corrected absorption spectrum in a predetermined wavelength range of a near infrared region.

Abstract: A method for manufacturing an optical device includes: preparing a semiconductor substrate that includes a portion corresponding to a base, a movable unit, and an elastic support portion; forming a first resist layer in a region corresponding to the base on a surface of a first semiconductor layer which is opposite to an insulating layer; forming a depression in the first semiconductor layer by etching the first semiconductor layer using the first resist layer as a mask; forming a second resist layer in a region corresponding to a rib portion on a bottom surface of the depression, a side surface of the depression, and the surface of the first semiconductor layer which is opposite to the insulating layer; and forming the rib portion by etching the first semiconductor layer until reaching the insulating layer using the second resist layer as a mask.

Abstract: A first region includes a plurality of first transfer column regions distributed in a first direction. A second region includes a plurality of second transfer column regions distributed in the first direction. The second region is positioned downstream of the first region in a charge transfer direction in the second transfer section. Lengths in a second direction of the plurality of first transfer column regions are equal. Lengths in the second direction of the plurality of second transfer column regions are longer than the length of the first transfer column region, and increase as the second transfer column region is positioned downstream in the charge transfer direction. A third region is disposed to correspond to the first region and extends along the first direction.

Abstract: A solid-state imaging device includes a pixel array unit, a row control unit, a row readout unit, a column control unit, and a column readout unit. The pixel array unit includes MN pixels each including a photodiode for generating charges by receiving light and arrayed two-dimensionally in M rows and N columns. The pixel inputs an m-th row control signal output from the row control unit to an m-th row control line, inputs an n-th column control signal output from the column control unit to an n-th column control line, and selects whether the charges generated in the photodiode are output to an m-th row output line or an n-th column output line based on a logical value of each of the m-th row control signal and the n-th column control signal.

Abstract: A control device 20 includes an image acquisition unit 203 configured to acquire a radiographic image obtained by irradiating a subject F with radiation and capturing an image of the radiation passing through the subject F, a noise map generation unit 204 configured to derive an evaluation value obtained by evaluating spread of a noise value from a pixel value of each pixel in the radiographic image on the basis of relationship data indicating a relationship between the pixel value and the evaluation value and generate a noise map that is data in which the derived evaluation value is associated with each pixel in the radiographic image, and a processing unit 205 configured to input the radiographic image and the noise map to a trained model 207 constructed in advance through machine learning and execute image processing of removing noise from the radiographic image.

Abstract: A laser processing method includes: a first step of preparing a wafer including a plurality of functional elements disposed to be adjacent to each other via a street; and a second step of, after the first step, irradiating the street with laser light based on information regarding the street such that a surface layer of the street is removed in a first region of the street and the surface layer remains in a second region of the street. The information regarding the street includes information indicating that, when a modified region is formed in the wafer along a line passing through the street, a fracture extending from the modified region does not reach the street along the line in the first region, and reaches the street along the line in the second region.

Abstract: A mirror unit includes an optical scanning device, a frame member, and a window member. The frame member includes first and second wall portions facing each other in an X-axis direction. The first wall portion is higher than the second wall portion. The window member is disposed on a top surface of the first wall portion and a top surface of the second wall portion and is inclined with respect to a mirror surface of the optical scanning device. In a cross-section parallel to the X-axis direction, the first wall portion is separated from a first line passing through a first end at a side of the first wall portion in the mirror surface and a first corner portion formed at the side of the first wall portion by an outer surface opposite to the frame member and a first side surface in the window member.

Abstract: An active energy irradiation device includes: an active energy irradiation unit having an emitting surface configured to emit an active energy ray; and an inert gas supply unit having a spray port configured to spray an inert gas. The inert gas supply unit includes a housing provided with the spray port, a connection portion provided to the housing, and a throttle portion provided to the connection portion. A pipe for supplying the inert gas into the housing is connectable to the connection portion.

Abstract: An organic light-receiving element includes an organic light-receiving layer containing a plurality of organic semiconductor molecules. Each of the plurality of organic semiconductor molecules is a molecule in which an excited state enabling reverse intersystem crossing from a lowest excited triplet state to a lowest excited singlet state is formed in each of the plurality of organic semiconductor molecules due to irradiation with light.

Abstract: An optical device includes a support portion, a first movable portion having an optical surface, a second movable portion having a frame shape and surrounding the first movable portion, a first coupling portion coupling the first movable portion and the second movable portion to each other, a second coupling portion coupling the second movable portion and the support portion to each other, and a softening member which has a softening characteristic and to which stress is applied when the first movable portion swings around a first axis. When viewed in a direction perpendicular to the optical surface, the softening member is provided to a portion of the second movable portion, the portion extending between a drive element and the first coupling portion, and is not electrically connected to an outside.

Abstract: A processer of an optical module is configured to control a voltage signal having a frequency for causing a movable mirror to resonate, and perform an intensity acquisition process. The intensity acquisition process is a process of acquiring a measurement light intensity of the interference light of the measurement light M times at a first time interval based on the frequency in each of a plurality of cycles among P cycles continuous in the voltage signal, acquiring an addition value of a plurality of the measurement light intensities mutually corresponding for the same number of times, acquiring a laser light intensity of the interference light of the laser light N times at a second time interval based on the frequency in each of the plurality of cycles, and acquiring an addition value of a plurality of the laser light intensities mutually corresponding for the same number of times.

Abstract: A laser processing apparatus includes an irradiation portion, and a controller. The irradiation portion includes a shaping portion configured to shape the laser light. The controller includes: a determination portion configured to determine a first and a second orientation; a processing controller configured to perform a first process of forming the modified region along a first region and stopping formation of the modified region other than the first region, and a second process of forming the modified region along a second region and stopping formation of the modified region other than the second region; and an adjustment portion configured to adjust the orientation of the longitudinal direction to be the first orientation when the first process is performed, and to adjust the orientation of the longitudinal direction to be the second orientation when the second process is performed.