Abstract: A photodetection module includes a photodetector and a fixing member. The photodetector includes a semiconductor substrate, a mesa portion, a first contact layer, a second contact layer, and a first electrode formed in a planar shape on a major surface of the semiconductor substrate, and electrically connected to one of the first contact layer and the second contact layer. The fixing member includes an insulating substrate, and a first wiring formed in a planar shape on a major surface of the insulating substrate. A recessed portion is formed in the major surface of the insulating substrate, and at least a part of the mesa portion is disposed inside the recessed portion. The first electrode is electrically connected to the first wiring in a state where the first electrode is in surface contact with the first wiring.

Abstract: The laser module includes a QCL element and a support member. The QCL element has a first end surface located on a first side in a second direction orthogonal to a stacking direction and a second end surface located on a second side opposite to the first side in the second direction. The substrate has first to fourth substrate-surfaces. The support member has a first portion having a first surface facing at least a portion of the fourth substrate-surface, and a second portion having a second surface facing at least a portion of the first substrate-surface and a third surface located opposite to the second surface in the second direction. At least a part of the terahertz wave generated in the active layer is incident on the second surface of the support member through the substrate and is emitted from the third surface through the inside of the second portion.

Abstract: A terahertz wave lens includes a substrate having a surface provided with an uneven structure that changes a phase of the terahertz wave. The uneven structure includes a plurality of holes that are periodically arranged. The uneven structure includes a plurality of regions where the plurality of holes are arranged. A height of the hole in a thickness direction of the substrate and a width of the pillar differ for each of the regions. Outer end portions of the uneven structure in the thickness direction are located on the same plane.

Abstract: The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.

Abstract: A terahertz wave attenuated total reflection spectroscopic method, includes: a first step of disposing a measurement target of which a volume is changed during a measurement period on a reflection surface; and a second step of acquiring data including a plurality of detection results respectively corresponding to a plurality of times separated from each other during the measurement period by allowing a terahertz wave to be incident on the reflection surface from a side opposite to the measurement target and by detecting the terahertz wave reflected on the reflection surface, during the measurement period. In the second step, a state in which a substantially constant pressure is applied to the measurement target disposed on the reflection surface is maintained during the measurement period.

Abstract: A photodetector device includes an avalanche photodiode array substrate. A circuit substrate includes time measurement circuits and a clock driver. Each of the time measurement circuit includes a delay line unit, and is arranged to acquire, from an operation result of a delay line, time information indicating timing at which a pulse signal is input from a corresponding avalanche photodiode. The delay line unit is arranged to initiate an operation of the delay line in response to input of the pulse signal to the time measurement circuit, and to stop the operation of the delay line in response to input of a clock signal from a clock driver to the time measurement circuit, and is arranged to detect a time interval shorter than a cycle of the clock signal by the operation of the delay line.

Abstract: An electron tube includes a housing having a window having an electromagnetic wave transmitting property, an electron emission plate disposed inside the housing, the electron emission plate emitting electrons, and a holding member disposed inside the housing and configured to hold the electron emission plate and to apply a voltage to the electron emission plate. The electron emission plate has a first main surface and a second main surface facing each other. The holding member has a base portion being in contact with the first main surface, and a plurality of electron emission plate biasing portions which are in contact with an edge of the second main surface and are configured to elastically bias the electron emission plate to the base portion. The holding member is electrically connected to the second main surface through the plurality of electron emission plate biasing portions.

Abstract: A photodetector includes: a semiconductor substrate; a mesa portion formed on a major surface of the semiconductor substrate to extend along an optical waveguide direction; a first contact layer; a second contact layer; a first electrode; and an air bridge wiring electrically connected to the first contact layer and the first electrode. When viewed in a direction perpendicular to the major surface of the semiconductor substrate, a length of the mesa portion in the optical waveguide direction is longer than a length of the mesa portion in a direction perpendicular to the optical waveguide direction. The air bridge wiring is led out from the first contact layer to one side in the direction perpendicular to the optical waveguide direction, and is bridged between the first contact layer and the first electrode.

Abstract: An optical property measurement apparatus includes a pulse formation unit, a waveform measurement unit, and an optical system. The pulse formation unit is capable of changing a temporal waveform of pulsed light in accordance with a type of optical property to be measured. The waveform measurement unit measures a temporal waveform of the pulsed light output from a measurement object after being incident on the measurement object. The optical system has an attenuation unit with an attenuation rate with respect to one wavelength component constituting the pulsed light larger than an attenuation rate with respect to another wavelength component constituting the pulsed light. The optical system is capable of switching between a first state in which the attenuation unit is arranged on an optical path of the pulsed light output from the measurement object and a second state in which the attenuation unit is not arranged on the optical path.

Abstract: A semiconductor member manufacturing method includes a laser processing step of forming a converging spot of laser light in an object including a semiconductor while relatively moving the converging spot with respect to the object along a line extended in a circular shape when viewed from a Z direction intersecting with an incident surface of the laser light in the object, thereby forming a modified region and a fracture extended from the modified region along the line in the object, and a separation step of, after the laser processing step, separating a part of the object using the modified region and the fracture as a boundary, thereby forming a semiconductor member from the object.

Abstract: A time response measurement apparatus includes a pulse formation unit, an attenuation unit, a waveform measurement unit, and an analysis unit. The pulse formation unit generates first pulsed light including a wavelength of pump light, second pulsed light including a wavelength of probe light, and third pulsed light including the wavelength of the pump light and the wavelength of the probe light, on a common optical axis. The attenuation unit transmits the first pulsed light, the second pulsed light, and the third pulsed light output from a sample arranged on the optical axis after being incident on the sample. An attenuation rate for the pump light is larger than an attenuation rate for the probe light. The analysis unit obtains a time response of the sample based on temporal waveforms of the first pulsed light, the second pulsed light, and the third pulsed light having passed through the attenuation unit.

Abstract: This laser processing apparatus includes a controller. The controller executes first control for causing the laser light to be modulated such that the laser light is branched into a plurality of rays of processing light and a plurality of converging points of the plurality of rays are positioned in different positions in a direction perpendicular to an irradiation direction of the laser light. In the first control, the laser light is modulated such that, in the irradiation direction, the converging point of each of the plurality of rays is positioned on a side opposite to a converging point of non-modulated light of the laser light with respect to an ideal converging point of the processing light, or the converging point of each of the plurality of rays is positioned on a side opposite to the ideal converging point with respect to the converging point of the non-modulated light.

Abstract: An image acquisition system includes a radiation source configured to output radiation toward an object, a rotating stage configured to rotate the object around a rotation axis, a radiation camera having an input surface to which the radiation transmitted through the object is input and an image sensor capable of TDI control, and an image processing apparatus configured to generate a radiographic image of the object at an imaging plane P based on the image data. The angle formed between the rotation axis of the rotating stage and the input surface of the radiation camera is set in accordance with the FOD which is the distance between the radiation source and an imaging plane in the object. The radiation camera is configured to perform TDI control in the image sensor in synchronization with the rotational speed of the object rotated by the rotating stage.

Abstract: Provided is a semiconductor device including: a semiconductor layer having an uneven structure configured to include a recessed portion on one surface side thereof; a first electrode film (first deposited film) provided on the one surface of the semiconductor layer; and a second electrode film (second deposited film) provided on a bottom surface of the recessed portion, wherein an enlarged portion having a cross-sectional area enlarged with respect to a portion on an opening portion side of the recessed portion is provided.

Abstract: A photoelectric surface includes a window material, a photoelectric conversion layer provided with a light incidence surface and an electron emission surface, and a carbon layer provided on the electron emission surface.

Abstract: The electron tube includes a vacuum container having a light transmitting substrate, a photocathode provided on an inner surface of the light transmitting substrate, an anode provided in the vacuum container, and a prism. The prism includes a bottom surface bonded to an outer surface of the light transmitting substrate, a light incident surface, and a light reflecting surface configured to further reflect light, which is incident to the photocathode through the prism and the light transmitting substrate and reflected at an interface between the photocathode and the vacuum space, so that the light is re-enter the photocathode. The light reflecting surface has an outwardly convex curved surface shape. The light incident surface is located inward of an imaginary spherical surface that is along the light reflecting surface.

Abstract: A radiation detector includes a photoelectric conversion element array, a scintillator layer converting radiation into light, a resin frame formed on the photoelectric conversion element array, and a protective film covering the scintillator layer. The resin frame has a groove continuous with an outer edge of the protective film. The groove has an overlapping region including a first groove end portion and a second groove end portion partially overlapping in a direction intersecting with an extension direction of the groove.

Abstract: A semiconductor substrate including a first main surface and a second main surface opposing each other is provided. The semiconductor substrate includes a first semiconductor region of a first conductivity type. The semiconductor substrate includes a plurality of planned regions where a plurality of second semiconductor regions of a second conductivity type forming pn junctions with the first semiconductor region are going to be formed, in a side of the second main surface. A textured region is formed on surfaces included in the plurality of planned regions, in the second main surface. The plurality of second semiconductor regions are formed in the plurality of planned regions after forming the textured region. The first main surface is a light incident surface of the semiconductor substrate.

Abstract: An iterative Fourier transform unit of a modulation pattern calculation apparatus performs a Fourier transform on a waveform function including an intensity spectrum function and a phase spectrum function, performs a replacement of a temporal intensity waveform function based on a desired waveform after the Fourier transform, and then performs an inverse Fourier transform. The iterative Fourier transform unit performs the replacement using a result of multiplying a function representing the desired waveform by a coefficient. The coefficient has a value with which a difference between the function after the multiplication of the coefficient and the temporal intensity waveform function after the Fourier transform is smaller than a difference before the multiplication, and a ratio of the difference is smaller when an intensity is higher at each time of the function before the multiplication.

Abstract: A spectroscopic module includes M beam splitters that are arranged along an X direction, where M is a natural number of 2 or more; M bandpass filters disposed on one side in a Z direction with respect to the M beam splitters, each of the M bandpass filters facing each of the M beam splitters; a light detector disposed on the one side in the Z direction with respect to the M bandpass filters and includes M light receiving regions, each of the M light receiving regions facing each of the M bandpass filters; a first support body supporting the M beam splitters; and a second support body supporting the M bandpass filters. Each of N beam splitters among the M beam splitters has a plate shape and has a thickness of 1 mm or less, where N is a natural number of 2 to M.