Patents Assigned to Headway Technologies, Inc.
  • Patent number: 11895928
    Abstract: A three terminal spin-orbit-torque (SOT) device is disclosed wherein a free layer (FL) with a switchable magnetization is formed on a Spin Hall Effect (SHE) layer comprising a Spin Hall Angle (SHA) material. The SHE layer has a first side contacting a first bottom electrode (BE) and an opposite side contacting a second BE where the first and second BE are separated by a dielectric spacer. A first current is applied between the two BE, and the SHE layer generates SOT on the FL thereby switching the FL magnetization to an opposite perpendicular-to-plane direction. The SHE layer is a positive or negative SHA material, and may be a topological insulator such as Bi2Sb3. A top electrode is formed on an uppermost hard mask in each SOT device. A single etch through the FL and SHE layer ensures a reliable first current pathway that is separate from a read current pathway.
    Type: Grant
    Filed: October 3, 2019
    Date of Patent: February 6, 2024
    Assignee: Headway Technologies, Inc.
    Inventors: Jesmin Haq, Tom Zhong, Luc Thomas, Zhongjian Teng, Dongna Shen
  • Patent number: 11894031
    Abstract: A near field transducer (NFT) having improved reliability is disclosed. In some embodiments, a NFT includes a resonator body layer having a front side at a first plane that is recessed a first distance from an air bearing surface (ABS), and a peg layer that is a single layer made of a noble metal or alloy thereof. The peg layer includes a peg portion or peg with a front side at the ABS, a back side at the first plane, and two sides aligned orthogonal to the ABS and separated by the first cross-track width. The peg portion or the peg having a single peg grain with or without a desired (111) orientation through laser self-annealing process.
    Type: Grant
    Filed: December 30, 2022
    Date of Patent: February 6, 2024
    Assignees: Headway Technologies, Inc., SAE Technologies Development (Dongguan) Co., Ltd., SAE Magnetics (Hong Kong) Limited
    Inventors: Xuhui Jin, Pengbo Yang, Koji Shimazawa, Hong Guo, Qinghui Guo, Vincent Man Fat Chiah
  • Patent number: 11887635
    Abstract: A read head includes a permanent magnet (PM) layer formed up to 100 nm behind a free layer where PM layer magnetization may be initialized in a direction that adjusts free layer (FL) bias point, and shifts sensor asymmetry (Asym) closer to 0% for individual heads at slider or Head Gimbal Assembly level to provide a significant improvement in device yield. Asym is adjusted using different initialization schemes and initialization directions. With individual heads, initialization direction is selected based on a prior measurement of asymmetry. The PM layer is CoPt or CoCrPt and has coercivity from 500 Oersted to 1000 Oersted. The PM layer may have a width equal to the FL, or in another embodiment, the PM layer adjoins a backside of the top shield and has a width equal to or greater than that of the FL.
    Type: Grant
    Filed: July 1, 2022
    Date of Patent: January 30, 2024
    Assignee: Headway Technologies, Inc.
    Inventors: Glen Garfunkel, Yan Wu, Wenyu Chen, Kunliang Zhang, Min Li, Shohei Kawasaki
  • Patent number: 11875825
    Abstract: A perpendicular magnetic recording (PMR) writer is disclosed. A write current passes through a driving coil and a bucking coil generates a magnetic flux that passes through the main pole tip and is used to write one or more magnetic bits in a magnetic medium. The improved PMR writer includes a double driving coil (DDC) design, in which a second electric current path in parallel with the driving coil through the main pole tip is added to drive the main pole in the same direction as the top driving coil.
    Type: Grant
    Filed: July 22, 2022
    Date of Patent: January 16, 2024
    Assignee: Headway Technologies, Inc.
    Inventor: Yue Liu
  • Patent number: 11823712
    Abstract: A PMR (perpendicular magnetic recording) write head is configured for measurements at the slider level and wafer-level processing stages that will allow a determination of the pole width at a position A (PWA) using the results of a resistance measurement between a main pole (MP) and surrounding write shields (WS) with a layer of conductor in the write gap and a layer of insulating material replacing the side gaps. Knowledge of an accurate value of PWA allows adjustments to be made in the processing of sliders on each rowbar which, in turn improves the capability of delivering the desired statistical variation (sigma) in the distribution of erasure widths for AC signals (EWACS) in a given design which, in turn, gives better overall performance in hard disk drive (HDD) applications.
    Type: Grant
    Filed: August 19, 2020
    Date of Patent: November 21, 2023
    Assignee: Headway Technologies, Inc.
    Inventor: Yan Wu
  • Patent number: 11804242
    Abstract: A read head is disclosed wherein a Spin Hall Effect (SHE) layer is formed on a free layer (FL) in a sensor and between the FL and top shield (S2). Preferably, the sensor has a seed layer, an AP2 reference layer, antiferromagnetic coupling layer, AP1 reference layer, and a tunnel barrier sequentially formed on a bottom shield (S1). When the stripe heights of the FL and SHE layer are equal, a two terminal configuration is employed where a current flows between one side of the SHE layer to a center portion thereof and then to S1, or vice versa. As a result, a second spin torque is generated by the SHE layer on the FL that opposes a first spin torque from the AP1 reference layer on the FL.
    Type: Grant
    Filed: November 29, 2022
    Date of Patent: October 31, 2023
    Assignee: Headway Technologies, Inc.
    Inventors: Wenyu Chen, Yan Wu
  • Patent number: 11790940
    Abstract: A method of forming a PMR (perpendicular magnetic recording) head that includes a tapered write pole that is fully surrounded by wrapped-around magnetic shields, including laterally disposed side shields, a trailing shield and a leading shield. A layer of high magnetic saturation material (high Bs) is formed on the leading edge of the trailing shield and extends rearward, away from the ABS plane to define a cross-sectional write gap shape that is not conformal with the shape of the tapered write pole. The cross-sectional shape of this shield layer enables it to absorb flux from the write pole so that the flux for writing is enhanced and concentrated at the area of the recording medium being written upon and does not extend to adjacent tracks or to downtrack positions at which such flux is not desired.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: October 17, 2023
    Assignee: Headway Technologies, Inc.
    Inventors: Sanghyun Lim, Yuhui Tang, Yaguang Wei, Yue Liu, Moris Dovek
  • Patent number: 11756577
    Abstract: A spin injection assisted magnetic recording structure is disclosed wherein a ferromagnetic (FM) layer and at least one spin preservation (SP) layer are formed between a main pole (MP) trailing side and a write shield (WS). Current (Ia) flows between the MP and WS, or is injected into the FM layer. As a result, the spin polarized electrons from the FM layer, which flow across one or two SP layers to generate a magnetization that enhances one or both of a local WS magnetization and return field, and a local MP magnetization and write field, respectively. A lead to the FM layer may be stitched to enable lower resistance and improve reliability. The FM layer may be recessed from the ABS to allow more overlap with the SP layer for lower current density while maintaining performance. Higher linear density and area density capability, and better reliability are achieved.
    Type: Grant
    Filed: November 24, 2021
    Date of Patent: September 12, 2023
    Assignee: Headway Technologies, Inc.
    Inventor: Yan Wu
  • Patent number: 11715491
    Abstract: Methods of critical dimension (CD) uniformity control for magnetic head devices are disclosed. In some embodiments, a method can include providing a film stack, the film stack including a substrate, a magnetoresistive (MR) sensor layer, and a hard mask layer, patterning the hard mask layer using a first mask that defines critical shape patterns other than the CD, forming a mandrel pattern using a second mask that defines the CD, and forming a sidewall spacer pattern on sidewalls of the mandrel pattern, and removing the mandrel pattern.
    Type: Grant
    Filed: June 30, 2021
    Date of Patent: August 1, 2023
    Assignee: Headway Technologies, Inc.
    Inventors: Tom Zhong, Hiroshi Omine, Jianing Zhou, Kunliang Zhang, Ruhang Ding, Min Li
  • Patent number: 11699461
    Abstract: The present embodiments relate to a thermally-assisted magnetic recording (TAMR) head. A magnetic assist current can be applied to the TAMR head to assist in reducing timing jitter as the TAMR head interacts with a magnetic recording material. The TAMR head can include a main write pole including a tip portion and configured to direct a magnetic field for interacting with a magnetic recording medium. The TAMR head can include a laser diode to heat the magnetic recording medium and a dynamic fly height (DFH) heating element for dynamically controlling a height of the main write pole. The heating element can be of a parallel bias circuit that directs a direct current (DC) bias current flow along an electrical path from the magnetic yoke element to the tip portion of the main write pole adjacent to an air bearing surface (ABS).
    Type: Grant
    Filed: April 29, 2022
    Date of Patent: July 11, 2023
    Assignee: Headway Technologies, Inc.
    Inventors: Bogdan Florin Valcu, Tobias Maletzky, Weihao Xu, Alain Truong, Yue Liu
  • Patent number: 11699460
    Abstract: A PMR (perpendicular magnetic recording) write head includes a main write pole (MP) that is surrounded by magnetic shields, including laterally disposed side shields (SS), a trailing shield (TS) and a leading shield (LS). The leading shield includes a leading-edge taper (LET) that conformally abuts a tapered side of the write pole. The leading-edge shield and the leading-edge taper can be independently recessed in a proximal direction away from an air bearing surface (ABS) plane so that one or the other of them is recessed and the other remains coplanar with the ABS, or both are recessed by independent amounts. In another configuration the LS is not planar but has a recessed portion in a center track region and two surrounding regions that are coplanar with the ABS plane.
    Type: Grant
    Filed: March 30, 2022
    Date of Patent: July 11, 2023
    Assignee: Headway Technologies, Inc.
    Inventors: Ying Liu, Yuhui Tang, Yue Liu, Kei Hirata
  • Patent number: 11683994
    Abstract: A perpendicular magnetic tunnel junction is disclosed wherein a metal insertion (MIS) layer is formed within a free layer (FL), a partially oxidized Hk enhancing layer is on the FL, and a nitride capping layer having a buffer layer/nitride layer (NL) is on the Hk enhancing layer to provide an improved coercivity (Hc)/switching current (Jc) ratio for spintronic applications. Magnetoresistive ratio is maintained above 100%, resistance×area (RA) product is below 5 ohm/?m2, and thermal stability to 400° C. is realized. The FL comprises two or more sub-layers, and the MIS layer may be formed within at least one sub-layer or between sub-layers. The buffer layer is used to prevent oxygen diffusion to the NL, and nitrogen diffusion from the NL to the FL. FL thickness is from 11 Angstroms to 25 Angstroms while MIS layer thickness is preferably from 0.5 Angstroms to 4 Angstroms.
    Type: Grant
    Filed: January 24, 2022
    Date of Patent: June 20, 2023
    Assignee: Headway Technologies, Inc.
    Inventors: Santiago Serrano Guisan, Luc Thomas, Jodi Mari Iwata, Guenole Jan, Ru-Ying Tong
  • Patent number: 11664045
    Abstract: A manufacturing method for a magnetoresistive element includes: a step of forming a stack; a step of forming an insulating film to cover the stack; a step of forming an initial magnetic layer to cover the stack and the insulating film so that a thickness of the initial magnetic layer in a first direction is greater than a thickness of the stack in the first direction; a step of forming an organic material film on the initial magnetic layer; and an etching step of etching a part of the initial magnetic layer and the organic material film by ion beam etching so that the initial magnetic layer becomes a pair of magnetic layers.
    Type: Grant
    Filed: February 22, 2022
    Date of Patent: May 30, 2023
    Assignee: HEADWAY TECHNOLOGIES, INC.
    Inventors: Hironori Araki, Yoshitaka Sasaki, Yoji Nomura, Shigeki Tanemura, Yukinori Ikegawa
  • Patent number: 11636873
    Abstract: A magnetic recording writer is disclosed. In some embodiments, the writer includes a main pole having a front portion and a back portion, a gap layer surround the main pole at the ABS, and a shield structure. The front portion includes a pole tip at an ABS plane, a pole tip thickness in a down-track direction, and curved sidewalls on each side of a center plane that is orthogonal to the ABS and bisects the main pole. The back portion includes first flared sidewalls extending from the curved sidewalls at an angle between 0 and 25 degrees relative to planes parallel to the center plane. The shield structure includes sidewalls having a sidewall portion facing the main pole and formed substantially conformal to the curved sidewalls up to a height of about 30-200 nm where the sidewall portions no longer follow the shape of the main pole.
    Type: Grant
    Filed: September 10, 2021
    Date of Patent: April 25, 2023
    Assignee: Headway Technologies, Inc.
    Inventors: Ying Liu, Yuhui Tang, Jiun-Ting Lee, Yue Liu
  • Patent number: 11631802
    Abstract: A plurality of conductive via connections are fabricated on a substrate located at positions where MTJ devices are to be fabricated, wherein a width of each of the conductive via connections is smaller than or equivalent to a width of the MTJ devices. The conductive via connections are surrounded with a dielectric layer having a height sufficient to ensure that at the end of a main MTJ etch, an etch front remains in the dielectric layer surrounding the conductive via connections. Thereafter, a MTJ film stack is deposited on the plurality of conductive via connections surrounded by the dielectric layer. The MTJ film stack is etched using an ion beam etch process (IBE), etching through the MTJ film stack and into the dielectric layer surrounding the conductive via connections to form the MTJ devices wherein by etching into the dielectric layer, re-deposition on sidewalls of the MTJ devices is insulating.
    Type: Grant
    Filed: November 7, 2019
    Date of Patent: April 18, 2023
    Assignee: Headway Technologies, Inc.
    Inventors: Vignesh Sundar, Yi Yang, Dongna Shen, Zhongjian Teng, Jesmin Haq, Sahil Patel, Yu-Jen Wang, Tom Zhong
  • Patent number: 11604313
    Abstract: A waveguide includes a core and a cladding. The core has an inlet on which light is incident. The core includes a front portion and a rear portion located between the front portion and the inlet. The front portion and the rear portion each have a thickness that is a dimension in a first direction and a width that is a dimension in a second direction. The first direction is orthogonal to a propagation direction of the light. The second direction is orthogonal to the propagation direction of the light and the first direction. The thickness of the front portion decreases with increasing distance from the inlet.
    Type: Grant
    Filed: June 30, 2021
    Date of Patent: March 14, 2023
    Assignee: HEADWAY TECHNOLOGIES, INC.
    Inventors: Yukinori Ikegawa, Dayu Zhou, Koji Shimazawa, Yoshitaka Sasaki, Hiroyuki Ito, Yoji Nomura
  • Patent number: 11587582
    Abstract: A read head is disclosed wherein a Spin Hall Effect (SHE) layer is formed on a free layer (FL) in a sensor and between the FL and top shield (S2). Preferably, the sensor has a seed layer, an AP2 reference layer, antiferromagnetic coupling layer, AP1 reference layer, and a tunnel barrier sequentially formed on a bottom shield (S1). In a three terminal configuration, a first current flows between S1 and S2 such that the AP1 reference layer produces a first spin torque on the FL, and a second current flows across the SHE layer thereby generating a second spin torque on the FL that opposes the first spin torque. When the stripe heights of the FL and SHE layer are equal, a two terminal configuration is employed where a current flows between one side of the SHE layer to a center portion thereof and then to S1, or vice versa.
    Type: Grant
    Filed: December 16, 2021
    Date of Patent: February 21, 2023
    Assignee: Headway Technologies, Inc.
    Inventors: Wenyu Chen, Yan Wu
  • Patent number: 11568891
    Abstract: A STRAMR structure is disclosed. The STRAMR structure can include a spin torque oscillator (STO) device in a WG provided between the mail pole (MP) trailing side and a trailing shield. The STO device, includes: a flux guiding layer that has a negative spin polarization (nFGL) with a magnetization pointing substantially parallel to the WG field without the current bias and formed between a first spin polarization preserving layer (ppL1) and a second spin polarization preserving layer (ppL2); a positive spin polarization (pSP) layer that adjoins the TS bottom surface; a non-spin polarization preserving layer (pxL) contacting the MP trailing side; a first negative spin injection layer (nSIL1) between the ppL2 and a third spin polarization preserving layer (ppL3); and a second negative spin injection layer (nSIL2) between the ppL3 and the pxL, wherein the nFGL, nSIL1, and nSIL2 have a spin polarization that is negative.
    Type: Grant
    Filed: November 30, 2021
    Date of Patent: January 31, 2023
    Assignee: Headway Technologies, Inc.
    Inventors: Wenyu Chen, Shohei Kawasaki, Tetsuya Roppongi
  • Publication number: 20230003940
    Abstract: A waveguide includes a core and a cladding. The core has an inlet on which light is incident. The core includes a front portion and a rear portion located between the front portion and the inlet. The front portion and the rear portion each have a thickness that is a dimension in a first direction and a width that is a dimension in a second direction. The first direction is orthogonal to a propagation direction of the light. The second direction is orthogonal to the propagation direction of the light and the first direction. The thickness of the front portion decreases with increasing distance from the inlet.
    Type: Application
    Filed: June 30, 2021
    Publication date: January 5, 2023
    Applicant: HEADWAY TECHNOLOGIES, INC.
    Inventors: Yukinori IKEGAWA, Dayu ZHOU, Koji SHIMAZAWA, Yoshitaka SASAKI, Hiroyuki ITO, Yoji NOMURA
  • Patent number: 11545175
    Abstract: A method of forming a spin transfer torque reversal assisted magnetic recording (STRAMR) writer is disclosed wherein a spin torque oscillator (STO) has a flux guiding layer (FGL) wherein magnetization flips to a direction substantially opposing the write gap (WG) field when sufficient current (IB) density is applied across the STO between a trailing shield and main pole (MP) thereby enhancing the MP write field. The FGL has a center portion with a larger magnetization saturation×thickness (MsT) than in FGL outer portions proximate to STO sidewalls. Accordingly, lower IB density is necessary to provide a given amount of FGL magnetization flipping and there is reduced write bubble fringing compared with writers having a FGL with uniform MsT. Lower MsT is achieved by partially oxidizing FGL outer portions. In some embodiments, there is a gradient in outer FGL portions where MsT increases with increasing distance from FGL sidewalls.
    Type: Grant
    Filed: March 10, 2022
    Date of Patent: January 3, 2023
    Assignee: Headway Technologies, Inc.
    Inventors: Ying Liu, Shohei Kawasaki, Wenyu Chen, Yuhui Tang