Patents Assigned to Headway Technologies, Inc.
-
Patent number: 11264051Abstract: A PMR writer with a capacitive one turn design is disclosed with a one turn top coil above the main pole (MP), a one turn bottom coil below the MP, and where a capacitor (C_bot) is electrically connected to the bottom coil thereby shunting the write current (lw) in the bottom coil above certain frequencies proximate to 1 GHz. The C_bot is made of TiO2 or Al-doped TiO2, for example, with a dielectric constant >10. As a result, the writer behaves like a 1+1T writer at lw frequencies substantially below 1 GHz, as a 1+0.xT writer at lw frequencies proximate to 1 GHz, and like a 1+0T writer in an overshoot region of the lw. Accordingly, better trailing shield field gradient, signal-to-noise ratio, and bit error rate during high frequency operation are achieved without compromising saturation speed and adjacent track interference for an overall improvement in performance.Type: GrantFiled: August 25, 2020Date of Patent: March 1, 2022Assignee: Headway Technologies, Inc.Inventor: Yue Liu
-
Patent number: 11264566Abstract: A perpendicular magnetic tunnel junction is disclosed wherein a metal insertion (MIS) layer is formed within a free layer (FL), a partially oxidized Hk enhancing layer is on the FL, and a nitride capping layer having a buffer layer/nitride layer (NL) is on the Hk enhancing layer to provide an improved coercivity (Hc)/switching current (Jc) ratio for spintronic applications. Magnetoresistive ratio is maintained above 100%, resistance×area (RA) product is below 5 ohm/?m2, and thermal stability to 400° C. is realized. The FL comprises two or more sub-layers, and the MIS layer may be formed within at least one sub-layer or between sub-layers. The buffer layer is used to prevent oxygen diffusion to the NL, and nitrogen diffusion from the NL to the FL. FL thickness is from 11 Angstroms to 25 Angstroms while MIS layer thickness is preferably from 0.5 Angstroms to 4 Angstroms.Type: GrantFiled: June 21, 2019Date of Patent: March 1, 2022Assignee: Headway Technologies, Inc.Inventors: Santiago Serrano Guisan, Luc Thomas, Jodi Mari Iwata, Guenole Jan, Ru-Ying Tong
-
Patent number: 11232812Abstract: A slider-mounted read/write transducer for a hard disk drive (HDD) has a topology that mitigates attraction and accumulation of lubricant and hydrocarbons during the HDD operation. The slider topology may include a pattern of cavities and channels symmetrically disposed about a central longitudinal axis. The slider may also have a transverse channel extending perpendicularly inward from an opening in each side edge of the slider to intersect a channel that extends longitudinally along a middle axis towards a leading-edge pad in which a read/write transducer is embedded. The ends of the transverse channel open into an air-carrying groove extending vertically upward in the side of the slider in which a side flow blocker (SFB) restricts the air flow into the channel portion.Type: GrantFiled: February 18, 2021Date of Patent: January 25, 2022Assignees: SAE Magnetics (H.K.) Ltd., Headway Technologies, Inc.Inventors: Guoqiang Zheng, Ellis Cha
-
Patent number: 11217274Abstract: A hard magnet stabilization scheme is disclosed for a top shield and junction shields for double or triple dimension magnetic reader structures. In one design, the hard magnet (HM) adjoins a top or bottom surface of all or part of a shield domain such that the HM is recessed from the air bearing surface to satisfy reader-to-reader spacing requirements and stabilizes a closed loop magnetization in the top shield. The HM may have a height and width greater than that of the top shield. The top shield may have a ring shape with a HM formed above, below, or within the ring shape, and wherein the HM stabilizes a vortex magnetization. HM magnetization is set or reset from room temperature to 100° C. to maintain a desired magnetization direction in the top shield, junction shield, and free layer in the sensor.Type: GrantFiled: February 7, 2020Date of Patent: January 4, 2022Assignee: Headway Technologies, Inc.Inventors: Junjie Quan, Glen Garfunkel, Yewhee Chye, Kunliang Zhang, Min Li
-
Patent number: 11211084Abstract: A Perpendicular Magnetic Recording (PMR) head is configured for use in Thermally Assisted Magnetic Recording (TAMR). Two or three contiguous write shields, of various widths and thicknesses, formed on a leading edge side of the write gap (WG), main pole (MP) and near-field transducer (NFT), protect the head during write touchdowns (TD) and signal the approach of such a touchdown. Moreover during a write touchdown the contact with the head is restricted to the large write shields, producing a large touchdown area (TDA) and insuring the lifetime of the head.Type: GrantFiled: October 16, 2020Date of Patent: December 28, 2021Assignees: SAE Magnetics (H.K.) Ltd., Headway Technologies, Inc.Inventors: Qinghua Zeng, Siu Yin Ngan, Ellis Cha, Kowang Liu
-
Patent number: 11205447Abstract: A read head is disclosed wherein a Spin Hall Effect (SHE) layer is formed on a free layer (FL) in a sensor and between the FL and top shield (S2). Preferably, the sensor has a seed layer, an AP2 reference layer, antiferromagnetic coupling layer, AP1 reference layer, and a tunnel barrier sequentially formed on a bottom shield (S1). In a three terminal configuration, a first current flows between S1 and S2 such that the AP1 reference layer produces a first spin torque on the FL, and a second current flows across the SHE layer thereby generating a second spin torque on the FL that opposes the first spin torque. When the stripe heights of the FL and SHE layer are equal, a two terminal configuration is employed where a current flows between one side of the SHE layer to a center portion thereof and then to S1, or vice versa.Type: GrantFiled: August 21, 2019Date of Patent: December 21, 2021Assignee: Headway Technologies, Inc.Inventors: Wenyu Chen, Yan Wu
-
Patent number: 11189304Abstract: A spin injection assisted magnetic recording structure is disclosed wherein a ferromagnetic (FM) layer and at least one spin preservation (SP) layer are formed between a main pole (MP) trailing side and a write shield (WS). Current (Ia) flows between the MP and WS, or is injected into the FM layer. As a result, the spin polarized electrons from the FM layer, which flow across one or two SP layers to generate a magnetization that enhances one or both of a local WS magnetization and return field, and a local MP magnetization and write field, respectively. A lead to the FM layer may be stitched to enable lower resistance and improve reliability. The FM layer may be recessed from the ABS to allow more overlap with the SP layer for lower current density while maintaining performance. Higher linear density and area density capability, and better reliability are achieved.Type: GrantFiled: September 6, 2019Date of Patent: November 30, 2021Assignee: Headway Technologies, Inc.Inventor: Yan Wu
-
Patent number: 11170802Abstract: A PMR (perpendicular magnetic recording) write head configured for microwave assisted magnetic recording (MAMR) includes a spin-torque oscillator (STO) and trailing shield formed of high moment magnetic material (HMTS). By patterning the STO and the HMTS in a simultaneous process the HMTS and the STO layer are precisely aligned and have very similar cross-track widths. In addition, the write gap at an off-center location has a thickness that is independent from its center-track thickness and the write gap total width can have a flexible range whose minimum value is the same width as the STO width.Type: GrantFiled: July 10, 2019Date of Patent: November 9, 2021Assignee: Headway Technologies, Inc.Inventors: Yuhui Tang, Ying Liu
-
Patent number: 11152021Abstract: A perpendicular magnetic recording (PMR) writer is disclosed wherein an insulation layer is formed between a top yoke (TY) and an uppermost (PP3) trailing shield to electrically isolate the main pole (MP) from a trailing loop for magnetic flux return. One or both of a first non-magnetic (NM) metal layer and a second NM metal layer are formed between the MP tip and a hot seed layer and side shields, respectively, to form an electrical path that is in parallel to that of a dynamic fly height (DFH) heater circuit. MP tip protrusion is enhanced and writability is improved especially for track widths <40 nm, and is tunable by the volume of the first and second NM layer, and the composition of the NM metals. Existing writer pad layouts may be employed and there is no additional cost to PMR backend processes.Type: GrantFiled: November 12, 2020Date of Patent: October 19, 2021Assignee: Headway Technologies, Inc.Inventors: Yue Liu, Yan Wu
-
Patent number: 11114121Abstract: A slider design for a hard disk drive (HDD) features a shallow cavity adjacent to a leading edge that has patterns of sub-cavities of various shapes etched into its base to reduce its original surface area. The presence of these patterns of sub-cavities significantly reduces the probability that the slider will capture particles on the surface of a rotating disk and thereby reduces the corresponding probability of surface scratches that such captured particles inevitably produce.Type: GrantFiled: October 19, 2020Date of Patent: September 7, 2021Assignees: SAE Magnetics (H.K.) Ltd., Headway Technologies, Inc.Inventors: Ben Ng Kwun Pan, Ellis Cha
-
Patent number: 11056136Abstract: A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed wherein a SHE layer and a conductor layer (CL) are formed between a main pole (MP) trailing side and a trailing shield (TS). When the SHE layer is a negative Spin Hall Angle (SHA) material, current (Ia) flows from the SHE layer across the CL to a lead back to a source, or across the CL to one of the MP and TS. For a SHE layer with a positive SHA material, Ia flows from one of the MP or TS or from a lead across the CL to the SHE layer. Spin polarized current in the SHE layer applies spin transfer torque that tilts a local MP magnetization to a direction that enhances a MP write field, or that tilts a local TS magnetization to a direction that increases the TS return field and improves bit error rate.Type: GrantFiled: July 2, 2020Date of Patent: July 6, 2021Assignee: Headway Technologies, Inc.Inventor: Wenyu Chen
-
Patent number: 11056133Abstract: A PMR (perpendicular magnetic recording) write head configured for microwave assisted magnetic recording (MAMR) includes a spin-torque oscillator (STO) and trailing shield formed of high moment magnetic material (HMTS). By patterning the STO and the HMTS in a simultaneous process the HMTS and the STO layer are precisely aligned and have very similar cross-track widths. In addition, the write gap at an off-center location has a thickness that is independent from its center-track thickness and the write gap total width can have a flexible range whose minimum value is the same width as the STO width.Type: GrantFiled: September 18, 2020Date of Patent: July 6, 2021Assignee: Headway Technologies, Inc.Inventors: Yuhui Tang, Ying Liu
-
Patent number: 11043632Abstract: A first pattern is formed on an MTJ stack as a first array of first parallel bands. A first ion beam etching is performed on the MTJ stack using the first pattern wherein a tilt between an ion beam source and the substrate is maintained such that a horizontal component of the ion beam is parallel to the first parallel bands and the substrate is not rotated. Thereafter, a second pattern is formed on the MTJ stack as a second array of parallel bands wherein the second parallel bands are perpendicular to the first parallel bands. A second ion beam etching is performed using the second pattern wherein a tilt between an ion beam source and the substrate is maintained such that a horizontal component of the ion beam is parallel to the second parallel bands and wherein the substrate is not rotated to complete formation of the MTJ structure.Type: GrantFiled: September 17, 2019Date of Patent: June 22, 2021Assignee: Headway Technologies, Inc.Inventors: Vignesh Sundar, Guenole Jan, Dongna Shen, Yi Yang, Yu-Jen Wang
-
Patent number: 11043240Abstract: A near field transducer (NFT) with an upper RhIr layer having an Ir content from 20-80 atomic % and a lower Au layer is formed between a waveguide and main pole at an air bearing surface (ABS). The RhIr layer has a rod-like front portion (peg) up to height h1, and a substantially triangular shaped back portion (body) from h1 to height h2. In some embodiments, there is a Rh underlayer with a thickness from 10 Angstroms to 200 Angstroms between the upper and lower NFT layers, and extending from the ABS to h2 so that the RhIr layer has a substantially uniform microcrystalline structure throughout to prevent thermally induced rupture defects proximate to h1. Optionally, the Rh underlayer may have a front side at h1, and may further comprise a lower Al or Zr adhesion layer. Accordingly, there is improved device reliability.Type: GrantFiled: February 25, 2020Date of Patent: June 22, 2021Assignee: Headway Technologies, Inc.Inventors: Koji Shimazawa, Shengyuan Wang
-
Patent number: 11043234Abstract: A spin torque reversal assisted magnetic recording (STRAMR) structure is disclosed wherein a spin torque oscillator (STO) is formed in the write gap (WG) and generates one or both of a radio frequency (RF) field on a magnetic bit to lower the required write field during a write process, and a spin torque on a field generation layer (FGL) in the STO that flips a FGL magnetization to a direction opposing the WG field thereby increasing reluctance in the WG and causing larger write field output from the main pole (MP). The FGL is between two spin preserving layers that each conduct spin polarized current from an adjoining spin polarization (SP) layer. Current is applied from the MP and trailing shield to the SP layers, and returns to a direct current source through a lead from the FGL. STO sidewalls are self-aligned to a MP tip upper portion.Type: GrantFiled: August 21, 2019Date of Patent: June 22, 2021Assignee: Headway Technologies, Inc.Inventor: Yan Wu
-
Patent number: 11043232Abstract: A spin transfer torque reversal assisted magnetic recording (STRAMR) device is disclosed wherein a flux change layer (FCL) is formed between a main pole (MP) trailing side and a trailing shield (TS). The FCL has a magnetization that flips to a direction substantially opposing the write gap magnetic field when a direct current (DC) of sufficient current density is applied across the STRAMR device thereby increasing reluctance in the WG and producing a larger write field output at the air bearing surface. Heat transfer in the STRAMR device is enhanced and production cost is reduced by enlarging the STRAMR width to be essentially equal to that of the TS, and where the TS and STRAMR widths are formed using the same process steps. Bias voltage is used to control the extent of FCL flipping to a center portion to optimize the gain in area density capability in the recording system.Type: GrantFiled: February 4, 2020Date of Patent: June 22, 2021Assignee: Headway Technologies, Inc.Inventor: Yan Wu
-
Patent number: 11031039Abstract: A preamplifier that that is configured for optimizing the write current waveform to achieve the best areal density capability (ADC) and adjacent track interference (ATI) performance of a magnetic recording disk drive. The preamplifier is configured for providing a magnetic head write current with a main pole relaxation zone for providing a buffer zone for main pole relaxation from saturation state to a remanence state before writing the next bit. The preamplifier is further configured for providing a magnetic head write current with a reference main pole relaxation current located at an end region data of each bit. The length of the reference main pole relaxation current is a function of the bit length, frequency, recording velocity, and writer/media switching speed.Type: GrantFiled: August 19, 2020Date of Patent: June 8, 2021Assignee: Headway Technologies, Inc.Inventors: Yuhui Tang, Ying Liu
-
Patent number: 11031548Abstract: A method for fabricating a magnetic tunneling junction (MTJ) structure is described. A MTJ film stack is deposited on a bottom electrode on a substrate. The MTJ film stack is first ion beam etched (IBE) using a first angle and a first energy to form a MTJ device wherein conductive re-deposition forms on sidewalls of the MTJ device. Thereafter, the conductive re-deposition is oxidized. Thereafter, the MTJ device is second ion beam etched (IBE) at a second angle and a second energy to remove oxidized re-deposition.Type: GrantFiled: November 4, 2019Date of Patent: June 8, 2021Assignee: Headway Technologies, Inc.Inventors: Dongna Shen, Yi Yang, Sahil Patel, Vignesh Sundar, Yu-Jen Wang
-
Patent number: 11024333Abstract: A bottom shield in a read head is modified by including a non-magnetic decoupling layer and second magnetic layer on a conventional first magnetic layer. The second magnetic layer has a magnetization that is not exchange coupled to the first magnetic layer, and a domain structure that is not directly affected by stray fields due to domain wall motion in the first magnetic layer. Accordingly, the modified bottom shield reduces shield related noise on the reader and will provide improved signal to noise (SNR) ratio and better reader stability. The second magnetic layer may be further stabilized with one or both of an antiferromagnetic coupling scheme, and insertion of an antiferromagnetic pinning layer. In dual readers, the modified bottom shield is used in either the bottom or top reader although in the latter, first magnetic layer thickness is reduced to maintain reader-to-reader spacing and acceptable bit error rate (BER).Type: GrantFiled: December 16, 2019Date of Patent: June 1, 2021Assignee: Headway Technologies, Inc.Inventor: Yan Wu
-
Patent number: 11017806Abstract: A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed wherein a SHE layer comprising a giant Spin Hall Angle material is formed in a write gap between a main pole (MP) trailing side and trailing shield (TS). The SHE layer contacts either the MP or TS, and has a front side at the air bearing surface or recessed therefrom. In one embodiment, a current (I1) is applied between the MP trailing side and SHE layer and is spin polarized to generate a first spin transfer torque that tilts a local MP magnetization to a direction that enhances a MP write field. In a second embodiment, a current (I2) is applied between the SHE layer and TS and is spin polarized to generate a second spin transfer torque that tilts a local TS magnetization to a direction that increases the TS return field and improves bit error rate.Type: GrantFiled: August 27, 2020Date of Patent: May 25, 2021Assignee: Headway Technologies, Inc.Inventors: Wenyu Chen, Yan Wu