Patents Assigned to Headway Technologies, Inc.
  • Patent number: 11545175
    Abstract: A method of forming a spin transfer torque reversal assisted magnetic recording (STRAMR) writer is disclosed wherein a spin torque oscillator (STO) has a flux guiding layer (FGL) wherein magnetization flips to a direction substantially opposing the write gap (WG) field when sufficient current (IB) density is applied across the STO between a trailing shield and main pole (MP) thereby enhancing the MP write field. The FGL has a center portion with a larger magnetization saturation×thickness (MsT) than in FGL outer portions proximate to STO sidewalls. Accordingly, lower IB density is necessary to provide a given amount of FGL magnetization flipping and there is reduced write bubble fringing compared with writers having a FGL with uniform MsT. Lower MsT is achieved by partially oxidizing FGL outer portions. In some embodiments, there is a gradient in outer FGL portions where MsT increases with increasing distance from FGL sidewalls.
    Type: Grant
    Filed: March 10, 2022
    Date of Patent: January 3, 2023
    Assignee: Headway Technologies, Inc.
    Inventors: Ying Liu, Shohei Kawasaki, Wenyu Chen, Yuhui Tang
  • Patent number: 11514931
    Abstract: A magnetic head includes a main pole, a trailing shield, and a spin torque oscillator. A top surface of the main pole includes a first inclined portion, a second inclined portion, and a third inclined portion arranged in order of closeness to a medium facing surface. Each of the first to third inclined portions has a front end closest to the medium facing surface and a rear end farthest from the medium facing surface. Each of the first to third inclined portions is inclined relative to the medium facing surface and a direction orthogonal to the medium facing surface so that its rear end is located forward relative to its front end in a direction of travel of a recording medium.
    Type: Grant
    Filed: February 22, 2022
    Date of Patent: November 29, 2022
    Assignee: HEADWAY TECHNOLOGIES, INC.
    Inventors: Hironori Araki, Yoshitaka Sasaki, Tetsuhito Shinohara, Shigeki Tanemura, Kazuki Sato, Yoji Nomura, Yukinori Ikegawa, Tetsuya Roppongi
  • Patent number: 11495251
    Abstract: A write shield of a magnetic head includes a pair of first side shields and a pair of second side shields. The pair of first side shields each include a first side wall and a second side wall. The pair of second side shields each include a third side wall. The third side wall of one of the pair of second side shields is continuous with the first side wall of one of the pair of first side shields. The third side wall of the other of the pair of second side shields is continuous with the first side wall of the other of the pair of first side shields.
    Type: Grant
    Filed: January 12, 2022
    Date of Patent: November 8, 2022
    Assignee: HEADWAY TECHNOLOGIES, INC.
    Inventors: Yukinori Ikegawa, Yoshitaka Sasaki, Kazuki Sato, Shigeki Tanemura
  • Patent number: 11410688
    Abstract: A thermally-assisted magnetic recording head includes a medium facing surface, a main pole, a waveguide, and a plasmon generator. A second metal layer of the plasmon generator includes a second front end facing the medium facing surface. A third metal layer of the plasmon generator includes a narrow portion located on the second metal layer. The narrow portion includes a front end face located in the medium facing surface and configured to generate near-field light from a surface plasmon, and a rear end opposite the front end face. The rear end is located farther from the medium facing surface than is the second front end.
    Type: Grant
    Filed: June 15, 2021
    Date of Patent: August 9, 2022
    Assignee: HEADWAY TECHNOLOGIES, INC.
    Inventors: Yoshitaka Sasaki, Hiroyuki Ito, Shigeki Tanemura, Hironori Araki, Yoji Nomura, Yukinori Ikegawa, Weihao Xu
  • Patent number: 11380355
    Abstract: A read head includes a permanent magnet (PM) layer formed up to 100 nm behind a free layer where PM layer magnetization may be initialized in a direction that adjusts free layer (FL) bias point, and shifts sensor asymmetry (Asym) closer to 0% for individual heads at slider or Head Gimbal Assembly level to provide a significant improvement in device yield. Asym is adjusted using different initialization schemes and initialization directions. With individual heads, initialization direction is selected based on a prior measurement of asymmetry. The PM layer is CoPt or CoCrPt and has coercivity from 500 Oersted to 1000 Oersted. The PM layer may have a width equal to the FL, or a width equal to the cross-track distance between outer sides of the longitudinal bias layers. In another embodiment, the PM layer adjoins a backside of the top shield.
    Type: Grant
    Filed: October 27, 2020
    Date of Patent: July 5, 2022
    Assignee: Headway Technologies, Inc.
    Inventors: Glen Garfunkel, Yan Wu, Wenyu Chen, Kunliang Zhang, Min Li, Shohei Kawasaki
  • Patent number: 11380353
    Abstract: A magnetic head includes a main pole, a trailing shield, a spin torque oscillator, first and second side shields, first and second gap films, and first and second guard films. The first gap film and the first guard film are interposed between the trailing shield and the first side shield. The second gap film and the second guard film are interposed between the trailing shield and the second side shield.
    Type: Grant
    Filed: May 6, 2021
    Date of Patent: July 5, 2022
    Assignee: HEADWAY TECHNOLOGIES, INC.
    Inventors: Yoshitaka Sasaki, Shigeki Tanemura, Kazuki Sato, Yoji Nomura, Hironori Araki, Tetsuhito Shinohara
  • Patent number: 11355141
    Abstract: A PMR (perpendicular magnetic recording) write head configured for microwave assisted magnetic recording (MAMR) in the form of spin assisted writing (SAW) or spin torque oscillation (STO) includes a spin-torque oscillator (STO) or SAW device and trailing shield formed of high moment magnetic material (HMTS). By patterning the STO or SAW and the HMTS in a simultaneous process the HMTS and the STO or SAW layers are precisely aligned and have very similar cross-track widths. In addition, the write gap at an off-center location has a thickness that is independent from its center-track thickness and the write gap total width can have a flexible range whose minimum value is the same width as the STO or SAW width.
    Type: Grant
    Filed: December 8, 2020
    Date of Patent: June 7, 2022
    Assignee: Headway Technologies, Inc.
    Inventors: Yuhui Tang, Ying Liu
  • Patent number: 11348605
    Abstract: A PMR (perpendicular magnetic recording) write head configured for thermally assisted magnetic recording (TAMR) and microwave assisted magnetic recording (MAMR) is made adaptive to writing at different frequencies by inserting thin layers of magnetic material into the material filling the side gaps (SG) between the magnetic pole (MP) and the side shields (SS). At high frequencies, the thin magnetic layers saturate and lower the magnetic potential of the bulky side shields.
    Type: Grant
    Filed: November 20, 2020
    Date of Patent: May 31, 2022
    Assignee: Headway Technologies, Inc.
    Inventors: Ying Liu, Yuhui Tang, Yue Liu, Jiun-Ting Lee, Shengyuan Wang, Xiaomin Liu
  • Patent number: 11315597
    Abstract: A plasmon generator (PG) is formed between a waveguide and main pole, and has a front portion (Au/Rh bilayer) wherein the upper Rh layer has a peg shape at an air bearing surface (ABS), and a tapered backside that is separated from a PG back portion by a dielectric spacer. The lower Au layer has a front side recessed from the ABS and curved sides self-aligned with the Rh layer sides. A key feature is that the back section of lower Au layer curved side forms a smaller angle with a plane aligned orthogonal to the ABS than a front section thereof thereby selectively enabling a deformation of the back end of the Au layer during a heat treatment to >300° C. at the wafer level. Accordingly, the front end of the lower Au layer is densified and provides an improved heat sink to improve reliability and area density capability (ADC).
    Type: Grant
    Filed: January 25, 2021
    Date of Patent: April 26, 2022
    Assignee: Headway Technologies, Inc.
    Inventors: Koji Shimazawa, Weihao Xu, Ken Fujii
  • Patent number: 11313834
    Abstract: The invention describes a family of sensors for assaying macro-molecules and/or biological cells in solution. The invention also describes methods of making and using the sensors. Each sensor has the form of a well (a hollow cylinder having a floor but no lid) or a trench whose walls comprise a plurality of GMR or TMR devices. Suitably shaped magnets located below each well's floor pull labeled particles into the well/trench and up against the inner wall where a field gradient orients them for optimum detection. Any unattached labels that happen to also be in the well/trench are removed through suitably sized holes in the floor.
    Type: Grant
    Filed: July 31, 2013
    Date of Patent: April 26, 2022
    Assignee: Headway Technologies, Inc.
    Inventor: Yuchen Zhou
  • Patent number: 11295768
    Abstract: A spin transfer torque reversal assisted magnetic recording (STRAMR) writer is disclosed wherein a spin torque oscillator has a flux guiding layer (FGL) wherein magnetization flips to a direction substantially opposing the write gap (WG) field when sufficient current (IB) density is applied across the STO between a trailing shield and main pole (MP) thereby enhancing the MP write field. A key feature is that the FGL has a center portion with a larger magnetization saturation×thickness (MsT) than in FGL outer portions proximate to STO sidewalls. Accordingly, lower IB density is necessary to provide a given amount of FGL magnetization flipping and there is reduced write bubble fringing compared with writers having a FGL with uniform MsT. Lower MsT is achieved by partially oxidizing FGL outer portions. In some embodiments, there is a gradient in outer FGL portions where MsT increases with increasing distance from FGL sidewalls.
    Type: Grant
    Filed: September 23, 2020
    Date of Patent: April 5, 2022
    Assignee: Headway Technologies, Inc.
    Inventors: Ying Liu, Shohei Kawasaki, Wenyu Chen, Yuhui Tang
  • Patent number: 11295767
    Abstract: A PMR (perpendicular magnetic recording) write head includes a main write pole (MP) that is surrounded by magnetic shields, including laterally disposed side shields (SS), a trailing shield (TS) and a leading shield (LS). The leading shield includes a leading-edge taper (LET) that conformally abuts a tapered side of the write pole. The leading-edge shield and the leading-edge taper can be independently recessed in a proximal direction away from an air bearing surface (ABS) plane so that one or the other of them is recessed and the other remains coplanar with the ABS, or both are recessed by independent amounts. In another configuration the LS is not planar but has a recessed portion in a center track region and two surrounding regions that are coplanar with the ABS plane.
    Type: Grant
    Filed: December 4, 2018
    Date of Patent: April 5, 2022
    Assignee: Headway Technologies, Inc.
    Inventors: Ying Liu, Yuhui Tang, Yue Liu, Kei Hirata
  • Patent number: 11289117
    Abstract: A magnetic head includes a medium facing surface, a main pole, a trailing shield, and a spin torque oscillator. A bottom surface of the trailing shield includes a first portion that includes an end located in the medium facing surface and is in contact with the spin torque oscillator at least in part. An element height that is a dimension of the spin torque oscillator in a direction perpendicular to the medium facing surface and a writer height that is a dimension of the first portion in the direction perpendicular to the medium facing surface are different from each other.
    Type: Grant
    Filed: February 8, 2021
    Date of Patent: March 29, 2022
    Assignee: HEADWAY TECHNOLOGIES, INC.
    Inventors: Yoshitaka Sasaki, Hiroyuki Ito, Kazuki Sato, Shigeki Tanemura, Hironori Araki, Yoji Nomura, Tetsuya Roppongi, Tetsuhito Shinohara, Ying Liu, Min Li, Alain Truong, Yuhui Tang, Wenyu Chen
  • Patent number: 11289645
    Abstract: A complementary metal oxide semiconductor (CMOS) device comprises a first metal line, a first metal via on the first metal line, a magnetic tunneling junction (MTJ) device on the first metal via wherein the first metal via acts as a bottom electrode for the MTJ device, a second metal via on the MTJ device, and a second metal line on the second metal via.
    Type: Grant
    Filed: December 31, 2018
    Date of Patent: March 29, 2022
    Assignee: Headway Technologies, Inc.
    Inventors: Yi Yang, Vignesh Sundar, Dongna Shen, Sahil Patel, Ru-Ying Tong, Yu-Jen Wang
  • Patent number: 11289116
    Abstract: A PMR, TAMR or MAMR (Perpendicular Magnetic Recording, Thermally Assisted Magnetic Recording or Microwave Assisted Magnetic Recording) slider-mounted read/write head produces less heat during operation by using magnetic read shields in which are embedded a patterned layer of thermally absorbing material. At least one shield includes a heating coil which is used to adjust the fly-height of the slider by creating a thermal protrusion at the slider ABS. When additional sources of energy, such as laser heating, microwave heating or the write coil itself, are applied to the recording medium, the shields can overheat, adversely affecting their performance. The patterned layer of heat absorbing material reduces the flow of heat from the thermal heating coil to the air bearing surface (ABS) thus cooling the region around the write head while not adversely affecting the shape of the thermal protrusion.
    Type: Grant
    Filed: November 20, 2020
    Date of Patent: March 29, 2022
    Assignee: Headway Technologies, Inc.
    Inventors: Kowang Liu, Yuhui Tang, Siu Yin Ngan, Qinghua Zeng, Ellis Cha
  • Patent number: 11264566
    Abstract: A perpendicular magnetic tunnel junction is disclosed wherein a metal insertion (MIS) layer is formed within a free layer (FL), a partially oxidized Hk enhancing layer is on the FL, and a nitride capping layer having a buffer layer/nitride layer (NL) is on the Hk enhancing layer to provide an improved coercivity (Hc)/switching current (Jc) ratio for spintronic applications. Magnetoresistive ratio is maintained above 100%, resistance×area (RA) product is below 5 ohm/?m2, and thermal stability to 400° C. is realized. The FL comprises two or more sub-layers, and the MIS layer may be formed within at least one sub-layer or between sub-layers. The buffer layer is used to prevent oxygen diffusion to the NL, and nitrogen diffusion from the NL to the FL. FL thickness is from 11 Angstroms to 25 Angstroms while MIS layer thickness is preferably from 0.5 Angstroms to 4 Angstroms.
    Type: Grant
    Filed: June 21, 2019
    Date of Patent: March 1, 2022
    Assignee: Headway Technologies, Inc.
    Inventors: Santiago Serrano Guisan, Luc Thomas, Jodi Mari Iwata, Guenole Jan, Ru-Ying Tong
  • Patent number: 11264560
    Abstract: A perpendicular magnetic tunnel junction is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic anisotropy (PMA) to provide thermal stability to 400° C. Insertion of an oxidation control layer (OCL) such as Mg and a magnetic moment tuning layer (MMTL) like Mo or W enables FL thickness to be reduced below 10 Angstroms while providing sufficient PMA for a switching voltage substantially less than 500 mV at a 10 ns pulse width and 1 ppm defect rate. Magnetoresistive ratio is ?1, and resistance×area (RA) product is below 5 ohm-?m2. Embodiments are provided where MMTL and OCL materials interface with each other, or do not contact each other. Each of the MMTL and OCL materials may be deposited separately, or at least one is co-deposited with the FL.
    Type: Grant
    Filed: June 21, 2019
    Date of Patent: March 1, 2022
    Assignee: Headway Technologies, Inc.
    Inventors: Jodi Mari Iwata, Guenole Jan, Santiago Serrano Guisan, Luc Thomas, Ru-Ying Tong
  • Patent number: 11264051
    Abstract: A PMR writer with a capacitive one turn design is disclosed with a one turn top coil above the main pole (MP), a one turn bottom coil below the MP, and where a capacitor (C_bot) is electrically connected to the bottom coil thereby shunting the write current (lw) in the bottom coil above certain frequencies proximate to 1 GHz. The C_bot is made of TiO2 or Al-doped TiO2, for example, with a dielectric constant >10. As a result, the writer behaves like a 1+1T writer at lw frequencies substantially below 1 GHz, as a 1+0.xT writer at lw frequencies proximate to 1 GHz, and like a 1+0T writer in an overshoot region of the lw. Accordingly, better trailing shield field gradient, signal-to-noise ratio, and bit error rate during high frequency operation are achieved without compromising saturation speed and adjacent track interference for an overall improvement in performance.
    Type: Grant
    Filed: August 25, 2020
    Date of Patent: March 1, 2022
    Assignee: Headway Technologies, Inc.
    Inventor: Yue Liu
  • Patent number: 11232812
    Abstract: A slider-mounted read/write transducer for a hard disk drive (HDD) has a topology that mitigates attraction and accumulation of lubricant and hydrocarbons during the HDD operation. The slider topology may include a pattern of cavities and channels symmetrically disposed about a central longitudinal axis. The slider may also have a transverse channel extending perpendicularly inward from an opening in each side edge of the slider to intersect a channel that extends longitudinally along a middle axis towards a leading-edge pad in which a read/write transducer is embedded. The ends of the transverse channel open into an air-carrying groove extending vertically upward in the side of the slider in which a side flow blocker (SFB) restricts the air flow into the channel portion.
    Type: Grant
    Filed: February 18, 2021
    Date of Patent: January 25, 2022
    Assignees: SAE Magnetics (H.K.) Ltd., Headway Technologies, Inc.
    Inventors: Guoqiang Zheng, Ellis Cha
  • Patent number: 11217274
    Abstract: A hard magnet stabilization scheme is disclosed for a top shield and junction shields for double or triple dimension magnetic reader structures. In one design, the hard magnet (HM) adjoins a top or bottom surface of all or part of a shield domain such that the HM is recessed from the air bearing surface to satisfy reader-to-reader spacing requirements and stabilizes a closed loop magnetization in the top shield. The HM may have a height and width greater than that of the top shield. The top shield may have a ring shape with a HM formed above, below, or within the ring shape, and wherein the HM stabilizes a vortex magnetization. HM magnetization is set or reset from room temperature to 100° C. to maintain a desired magnetization direction in the top shield, junction shield, and free layer in the sensor.
    Type: Grant
    Filed: February 7, 2020
    Date of Patent: January 4, 2022
    Assignee: Headway Technologies, Inc.
    Inventors: Junjie Quan, Glen Garfunkel, Yewhee Chye, Kunliang Zhang, Min Li